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Text: SPT6503 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800ã V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N5880 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)15 Absolute Max. Power Diss. (W)160# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)15
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Text: 2N2637 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)25 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125# I(CBO) Max. (A)10m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N2637
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Text: 2N5883 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)25
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Text: 2N5885 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)25
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Text: 2N3598 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: SPT6502 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)700ã V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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time700n
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Text: 2N3599 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N3599
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time700n
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Text: 1743-0630 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60ö V(BR)CBO (V)70 I(C) Max. (A)30 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N2636 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)25 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125# I(CBO) Max. (A)10m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1743-1430 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140ö V(BR)CBO (V)150 I(C) Max. (A)30 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N5882 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)15 Absolute Max. Power Diss. (W)160# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)150
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Text: 2N3597 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: NTC1863 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100öè V(BR)CBO (V) I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N5881 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)15 Absolute Max. Power Diss. (W)160# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)15
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2N5881
time700n
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Text: 2N5884 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)25
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Text: IXGH30N30 Transistors N-Channel IGBT V BR CES (V)250 V(BR)GES (V)20 I(C) Max. (A)60 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.
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IXGH30N30
Junc-Case620m
delay100nÃ
time200nÃ
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Text: 1743-1030 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)30 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: MJ13335 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500 V(BR)CBO (V) I(C) Max. (A)20 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m» @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: MG30G2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)30 Absolute Max. Power Diss. (W)250 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)20
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MG30G2DM1
time700n
HL093HD5
Code4-310
NumberTR00400310
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Text: MG50G2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)50 Absolute Max. Power Diss. (W)400 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)150n @V(GS) (V) (Test Condition)20
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MG50G2DM1
time700n
HL093HD5
Code4-310
NumberTR00400310
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