Untitled
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Text: SI911 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage100 t(rr) Max.(s) Rev.Rec. Time750n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)3.0
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SI911
Voltage100
Time750n
Current10u
StyleDO-201AD
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Untitled
Abstract: No abstract text available
Text: SI912 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time750n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)3.0
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SI912
Voltage200
Time750n
Current10u
StyleDO-201AD
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Abstract: No abstract text available
Text: FZT600A Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)160 I(C) Max. (A)2 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)140 h(FE) Min. Current gain.2k
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FZT600A
Freq150
time750nÃ
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Abstract: No abstract text available
Text: 2N6079 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)375 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)26# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u¶ @V(CBO) (V) (Test Condition)450 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)1.2
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2N6079
time750nÃ
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Text: BU406D Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)400 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)5.0mx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BU406D
Freq10M
time750n
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Untitled
Abstract: No abstract text available
Text: 2N6078 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)275 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)26# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)50u¶ @V(CBO) (V) (Test Condition)250 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)1.2
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2N6078
time750nÃ
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Abstract: No abstract text available
Text: 2N6077 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)275 V(BR)CBO (V)300 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)26# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m¶ @V(CBO) (V) (Test Condition)250 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)1.2
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2N6077
time750nÃ
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Untitled
Abstract: No abstract text available
Text: SK3894 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)375 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)45 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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SK3894
time750n
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Untitled
Abstract: No abstract text available
Text: FZT600B Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)160 I(C) Max. (A)2 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)140 h(FE) Min. Current gain.10k
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FZT600B
Freq150
time750nÃ
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