LT3503
Abstract: No abstract text available
Text: DEMO CIRCUIT 1050 LT3503 QUICK START GUIDE LT3503 1.2A, 2.2MHz Step-Down Switching Regulator in 2mmx3mm DFN DESCRIPTION Demonstration circuit 1050 is a monolithic step-dow n DC/DC sw itching regulator featuring LT3503. The demo board is designed for 3.3V output from a 4.5V to 20V
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LT3503
LT3503.
LT3503
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Untitled
Abstract: No abstract text available
Text: 400mW /1060nm Single Mode Pump Laser Features • • • • 400mW Kink Free 1060 wavelength Internal cooler and thermistor PM Fiber Applications • Ordering Information Fiber Lasers Part number Description EM250 1060nm SM Pump General Description The EM250 single mode, cooled 1060 nm pump laser delivers up to 400mW of fiber-coupled power. The module is packaged
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400mW
/1060nm
EM250
1060nm
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RJ11 splitter
Abstract: RJ61 splitter CT812 RJ-61 RJ11 JACK MODULE 4 PIN DI0408LSAR2 E96804 ICES-003 Intel Dialogic PLAY STATION 3 POWER SUPPLY
Text: Datasheet Telecom and Compute Products Intel Dialogic® DI0408LSAR2 Switching Board The Intel® Dialogic® DI0408LSAR2 switching board is a next-generation building block for converged communications systems. The DI0408LSAR2 is a single-slot, richly configured
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DI0408LSAR2
DI0408LSAR2
DI0408LSAR2;
DI0408LSAR2EU
RJ11 splitter
RJ61 splitter
CT812
RJ-61
RJ11 JACK MODULE 4 PIN
E96804
ICES-003
Intel Dialogic
PLAY STATION 3 POWER SUPPLY
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68pin SCSI connector
Abstract: RJ11 patch panel CBLTAC0X32 RJ21X EBZUSA-43111-CE-T fsk arm dtmf CT812 DISI32R2 Intel Dialogic 8 pin mini-din audio diagram
Text: Datasheet Telecom and Compute Products Intel Dialogic® DISI16R2, DISI24R2, and DISI32R2 Switching Boards Intel® Dialogic® DISI16R2, DISI24R2, and DISI32R2 switching boards are next-generation building blocks for converged communications systems. These boards are single-slot PCI solutions that
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DISI16R2,
DISI24R2,
DISI32R2
DISI32R2
68pin SCSI connector
RJ11 patch panel
CBLTAC0X32
RJ21X
EBZUSA-43111-CE-T
fsk arm dtmf
CT812
Intel Dialogic
8 pin mini-din audio diagram
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Untitled
Abstract: No abstract text available
Text: VS-10TQ035SPbF, VS-10TQ045SPbF Vishay High Power Products Schottky Rectifier, 10 A FEATURES • 175 °C TJ operation Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-10TQ035SPbF,
VS-10TQ045SPbF
J-STD-020,
2002/95/EC
AEC-Q101
VS-10TQ.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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136 8PIN
Abstract: AS1720 Bc161 marking LM741 electro mechanical solenoid valve AS1720B-ATDT BC161 MLPD 12V RELAYS MLPD 6 PIN PACKAGE
Text: Datasheet AS1720 S o l e n o i d / Va l v e D r i v e r w i t h C u r r e n t L i m i ta t i o n 1 General Description 2 Key Features The AS1720A is a low side current source providing an optimized DC Operation for power saving and ultra low electro magnetic radiation.
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AS1720
AS1720A
AS1720B
AS1720B
100mA
136 8PIN
AS1720
Bc161 marking
LM741
electro mechanical solenoid valve
AS1720B-ATDT
BC161
MLPD
12V RELAYS
MLPD 6 PIN PACKAGE
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Untitled
Abstract: No abstract text available
Text: iC-OG preliminary 8-BIT DIFFERENTIAL SCANNING OPTO ENCODER Rev D1, Page 1/10 FEATURES APPLICATIONS ♦ Monolithic construction with integrated photodiodes ensures excellent matching and technical reliability ♦ Short track spacing of 600 µm ♦ Elimination of dark currents through differential scanning
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38-pin
oQFN38-7x5
oQFN38-7x5-xR
20-pin
D-55294
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Untitled
Abstract: No abstract text available
Text: VS-10TQ035SPbF, VS-10TQ045SPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES Base cathode 2 • 175 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy
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VS-10TQ035SPbF,
VS-10TQ045SPbF
J-STD-020,
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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tip 1050
Abstract: transistor tip 1050 DA79 LT 735
Text: Am7944 Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS Programmable constant-current feed Current gain = 200 Programmable loop-detect threshold Low standby power Ground-key detector Tip Open state for ground-start lines –19 V to –56.5 V battery operation
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Am7944
tip 1050
transistor tip 1050
DA79
LT 735
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Untitled
Abstract: No abstract text available
Text: Le7944 Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant-current feed ■ On-chip Thermal Management TMG feature ■ Current gain = 200 ■ Two-wire impedance set by single external impedance ■ Programmable loop-detect threshold
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Le7944
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BR262ADEVK
Abstract: No abstract text available
Text: BR262ADEVK BELASIGNA R262 Analog Demonstrator Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL The BelaSigna R262 Analog Demonstrator The BelaSigna R262 Analog Demonstrator is a self-contained, battery-powered unit that can be used to
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BR262ADEVK
30-ball
BR262W30A103E1G)
SPU0410HR5Hâ
EVBUM2165/D
BR262ADEVK
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vishay T1113P
Abstract: No abstract text available
Text: T1113P www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Radiant sensitive area (in mm2): 7.5 • Peak sensitivity wavelength: 960 nm
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T1113P
T1113P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
vishay T1113P
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Untitled
Abstract: No abstract text available
Text: Le7944 Subscriber Line Interface Circuit • Programmable constant-current feed ■ On-chip Thermal Management TMG feature ■ Current gain = 200 ■ Two-wire impedance set by single external impedance ■ Low standby power ■ Ground-key detector ■ –19 V to –56.5 V battery operation
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Le7944
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Untitled
Abstract: No abstract text available
Text: 10TQ.PbF Series Vishay High Power Products Schottky Rectifier, 10 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation Base cathode 2 TO-220AC RoHS* • High purity, high temperature epoxy encapsulation for enhanced mechanical
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O-220AC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-10TQ035S-M3, VS-10TQ045S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES • 175 °C TJ operation Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy
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VS-10TQ035S-M3,
VS-10TQ045S-M3
J-STD-020,
O-263AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-10TQ035S-M3, VS-10TQ045S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES • 175 °C TJ operation Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy
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VS-10TQ035S-M3,
VS-10TQ045S-M3
J-STD-020,
O-263AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-10TQ035SHM3, VS-10TQ045SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES • 175 °C TJ operation Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy
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VS-10TQ035SHM3,
VS-10TQ045SHM3
J-STD-020,
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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10TQ040PBF
Abstract: VS-10TQ045-N3 10TQ035
Text: VS-10TQ.PbF Series, VS-10TQ.-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 10 A FEATURES Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-10TQ.
2002/95/EC
JEDEC-JESD47
O-220AC
O-220AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
10TQ040PBF
VS-10TQ045-N3
10TQ035
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Untitled
Abstract: No abstract text available
Text: VS-10TQ035SHM3, VS-10TQ045SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES • 175 °C TJ operation Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy
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VS-10TQ035SHM3,
VS-10TQ045SHM3
J-STD-020,
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-10TQ.PbF Series, VS-10TQ.-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 10 A FEATURES Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-10TQ.
O-220AC
2002/95/EC
JEDEC-JESD47
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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T8514VB
Abstract: No abstract text available
Text: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm
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T8514VB
2002/95/EC
2002/96/EC
T8514VB
18-Jul-08
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FVOV6870
Abstract: MIL-HDBK-263 VISHAY Optoelectronics
Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm
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TB9414VA
2002/95/EC
2002/96/EC
TB9414VA
18-Jul-08
FVOV6870
MIL-HDBK-263
VISHAY Optoelectronics
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VISHAY Optoelectronics
Abstract: FVOV6870 MIL-HDBK-263
Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm
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TB9414VA
2002/95/EC
2002/96/EC
TB9414VA
18-Jul-08
VISHAY Optoelectronics
FVOV6870
MIL-HDBK-263
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T8514
Abstract: T8514VB transistor tip 1050 FVOV6870 MIL-HDBK-263 81129
Text: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm
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T8514VB
2002/95/EC
2002/96/EC
T8514VB
18-Jul-08
T8514
transistor tip 1050
FVOV6870
MIL-HDBK-263
81129
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