MMA60
Abstract: 8 mu 0833 MCE Metelics
Text: MMA601 High Linearity HBT Die FEATURES • • • • + 44 dBm IP3 at 2.1 GHz + 26 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 5000 MHz Operation The MMA601 is an InGaP Heterojunction Bipolar Transistor (HBT) provided
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MMA601
MMA601
44dBm
MMA60
8 mu 0833
MCE Metelics
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Untitled
Abstract: No abstract text available
Text: Xcelite Table of Contents Xcelite®, founded in 1921, produces high quality tools for professional use. They are known throughout the electronics industry for a comprehensive line of screwdrivers, nutdrivers, convertible nutdriver/ screwdriver sets, interchangeable blade drivers, service tools and kits, pliers and cutters, shears, snips, wire strippers and
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7007S
Abstract: BARb TRANSISTOR SMD Diode HER 507
Text: WOW! Catalogue World of Weller Inhalt 2 Page 06 – Seite 219 Soldering, Microtools, Desoldering, Hot Air, Rework, Fume Extraction, Electronic Screwdrivers, Dispensing Systems, Accessories, etc. Page 220 – Seite 323 Tweezers, Cutters, Pliers, EROP, Stripping Tools, Kits, etc.
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4066 spice model
Abstract: marking r4 SOT343 RF LNA" 1 to 2 GHz" spice
Text: Freescale Semiconductor Technical Data MBC13900/D Rev. 0, 6/2002 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information 1 Introduction The MBC13900 is a high performance transistor
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MBC13900/D
MBC13900
MBC13900T1
OT-343)
OT-343
MBC13900
SC-70
318M-01,
4066 spice model
marking r4 SOT343
RF LNA" 1 to 2 GHz" spice
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information 1 1 Introduction The MBC13900 is a high performance transistor
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MBC13900/D
MBC13900
OT-343)
MBC13900
SC-70
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1, 05/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1 1
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MBC13900/D
MBC13900
MBC13900T11
MBC13900NT1
OT-343)
OT-343
OT-343
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318M
Abstract: LL1608-FH MBC13900 MBC13900T1 marking r4 SOT343 SOT343 lna
Text: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ
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MBC13900/D
MBC13900
OT-343)
MBC13900T1
OT-343
MBC13900
SC-70
318M
LL1608-FH
MBC13900T1
marking r4 SOT343
SOT343 lna
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LL1608-FH
Abstract: MBC13900 MBC13900NT1 MBC13900T1 Functional details of ic 4066 K 2545
Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1
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MBC13900/D
MBC13900
OT-343)
MBC13900T11
MBC13900NT1
MBC13900
SC-70
LL1608-FH
MBC13900NT1
MBC13900T1
Functional details of ic 4066
K 2545
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0338 transistor
Abstract: marking r4 SOT343
Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1
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MBC13900/D
MBC13900
MBC13900T11
MBC13900NT1
OT-343)
OT-343
OT-343
0338 transistor
marking r4 SOT343
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4066 spice model
Abstract: LL1608-FH MBC13900 MBC13900T1
Text: Freescale Semiconductor, Inc. Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package
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MBC13900/D
MBC13900
OT-343)
MBC13900T1
OT-343
MBC13900
SC-70
4066 spice model
LL1608-FH
MBC13900T1
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low noise, hetero junction fet
Abstract: high frequency transistor ga as fet NE27200 s11 diode shottky NE32500 nec, hetero junction transistor GA 88 KA 88
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable
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NE32500,
NE27200
NE32500
NE27200
NE32500
low noise, hetero junction fet
high frequency transistor ga as fet
s11 diode shottky
nec, hetero junction transistor
GA 88
KA 88
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SK 18752
Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Text: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,
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O03ED0
dete7837
H1-O03ED0-0805020NM
SK 18752
SK 18751
2SC5586
SI-18752
fn651
709332a
CTB-34D
SLA6102
SLA4052
SI 18751
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transistor NEC D 882 p
Abstract: nec d 882 p datasheet nec d 882 p Nec K 872 nec d 882 p transistor KA transistor 26 to 40 GHZ transistor NEC D 587 NE32400 transistor NEC 882 p NE24200
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable
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NE32400,
NE24200
NE32400
NE24200
NE32400
transistor NEC D 882 p
nec d 882 p datasheet
nec d 882 p
Nec K 872
nec d 882 p transistor
KA transistor 26 to 40 GHZ
transistor NEC D 587
transistor NEC 882 p
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NE900474-13
Abstract: NE900474-15 NE9004 NE900400G NE900 NE9002 AN-1001 NE9000 NE9001 UM1000
Text: NE9004 SERIES Ku-BAND POWER GaAs MESFET FEATURES • DESCRIPTION NE900474-13, -15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER 35 The NE9004 is a 0.5 micron recessed gate GaAs power FET for commercial and space amplifier and oscillator applications to 20 GHz. This device is part of the NE900 series of KuBand power transistors which includes the NE9000, NE9001
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NE9004
NE900474-13,
NE9004
NE900
NE9000,
NE9001
NE9002.
24-Hour
NE900474-13
NE900474-15
NE900400G
NE9002
AN-1001
NE9000
NE9001
UM1000
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Untitled
Abstract: No abstract text available
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable
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NE32500,
NE27200
NE32500
NE27200
NE32500
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Untitled
Abstract: No abstract text available
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high m obility electrons. Its excellent low noise and high associated gain make it suitable
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NE32400,
NE24200
NE32400
NE24200
NE32400
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Untitled
Abstract: No abstract text available
Text: * M * DISCRETE SEMICONDUCTORS LLE16350X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 October 1992 Philips Semiconductors PHILIPS bbS3T31 003301b ^ P h ilip s S em iconductors P relim inary sp e cifica tio n
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LLE16350X
bbS3T31
003301b
33Q2M
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Untitled
Abstract: No abstract text available
Text: HEIjJLETT-PACKARDn CMPNTS 2DE D H 44475Ö4 OOQSSSfl 4 E9 T - Low N oise Transistors HXTR-6001 Chip * 2N6617 HXTR-6101, TX Technical Data 2N6742 ( h x t r - 6102, t x and TXV 2N6618 (HXTR-6103, TX and TXV) 2N6743 (HXTR-6104, TX and TXV) Features D escription
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HXTR-6001
2N6617
HXTR-6101,
2N6742
2N6618
HXTR-6103,
2N6743
HXTR-6104,
MIL-S-19500,
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NEC 82 A 0839
Abstract: NE27200 NE32500
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable
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NE32500,
NE27200
NE32500
NE27200
NEC 82 A 0839
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Untitled
Abstract: No abstract text available
Text: HC-5502B HARRIS S E M IC O N D U C T O R s u e Subscriber Line Interface Circuit M arch 1993 Features Description • Pin For Pin Replacement For The HC-5502A The H arris SUC incorporates m any o f the BORSHT function on a single IC chip. This includes DC battery feed, a ring relay driver,
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HC-5502B
HC-5502A
100kn
50msec.
HC-550X
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HXTR-2001
Abstract: HXTR-5001 HXTR-5002 HXTR-6001 transistor PT 4500 chip die npn transistor equivalent transistor PT 3500 HXTR5
Text: KOP Features HXTR-6001 I 0.013 TYP. • EMITTER PAD CIRCUITS M r COM PONENTS LOW NOISE TRANSISTOR CHIP ■- LOW NOISE FIGURE 1.7 dB Typical at 2 GHz 2.7 dB Typical at 4 GHz HIGH GAIN AT NOISE FIGURE BIAS 13.0 dB Typical at 2 GHz 9.0 dB Typical at 4 GHz 330 (0.013)
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HXTR-6001
HXTR-6001
HXTR-5001
HXTR-5002
HXTR-2001
transistor PT 4500
chip die npn transistor
equivalent transistor PT 3500
HXTR5
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Untitled
Abstract: No abstract text available
Text: F IN A L ü Am7942 Advanced Micro Devices Subscriber Line interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant current feed ■ -1 9 V to -5 8 V battery operation ■ Receive current gain = 200 ■ ■ Programmable loop detect threshold
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Am7942
EIA/TIA-464-A.
Am7942
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Untitled
Abstract: No abstract text available
Text: CF004 Series GaAs Pseudomorphic HEMT and MESFET Chips J Super Low Noise: 1.5 dB at 18 G H z □ High Gain: Usable to 44 GHz □ Flat Gain for Distributed Amplifiers □ Active Layers Include: Pseudomorphic H E M T , Epitaxial and Ion Implanted J W afer Qualification Procedure
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CF004
CF004-01.
CF004-02
CF004-03
CF004-01
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transistor I 17-13 0773
Abstract: No abstract text available
Text: H EW L E T T I x l PA CK A R D w a rn 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,
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AT-31625
OT-223
AT-31625
transistor I 17-13 0773
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