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    TIP DARLINGTON PNP 141 Search Results

    TIP DARLINGTON PNP 141 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    PTRF200 Coilcraft Inc Tip/ring filter, tip/ring, SMT, RoHS Visit Coilcraft Inc
    PTRF2000L Coilcraft Inc Tip/ring filter, tip/ring, SMT, RoHS Visit Coilcraft Inc

    TIP DARLINGTON PNP 141 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIPI 45F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem ent to TIP 140F/141F/142F ABSOLUTE MAXIMUM RATINGS


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    PDF 45F/146F/147F 140F/141F/142F TIP145F TIP146F TIP147F

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIPI 45F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3P F C om plem ent to TIP 140F/141F/142F ABSOLUTE MAXIMUM RATINGS


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    PDF 45F/146F/147F 140F/141F/142F TIP145F TIP146F TIP147F

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 45/146/147 HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3P \A \ wh C om plem ent to TIP 140/141/142 ABSOLUTE MAXIMUM RATINGS


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    PDF TIP147 TIP146 TIP145 TIP145/146/147

    Untitled

    Abstract: No abstract text available
    Text: Zjï SGS-THOMSON ¡[LieraMe TIP140/141/142 TIPI 45/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . TIP141, TIP142, TIP145 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION


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    PDF TIP140/141/142 TIP141, TIP142, TIP145 TIP147 TIP140, TIP141 TIP142 O-218 TIP145,

    tip 147 TRANSISTOR

    Abstract: tip 145 transistor transistor tip 142 TIP14 tip 146 TIP-14 tip147c tip 141 transistor transistor tip 146
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145/146/147 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V ce = — 4V, lc = - 5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3P Com plement to TIP140/141/142 ABSOLUTE MAXIMUM RATINGS


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    PDF TIP145/146/147 TIP140/141/142 TIP14 TIP147 I45/146/147 tip 147 TRANSISTOR tip 145 transistor transistor tip 142 tip 146 TIP-14 tip147c tip 141 transistor transistor tip 146

    tip 147 TRANSISTOR

    Abstract: TIP147F TIP146F TIP145F
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ Vce = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complement to T IP 140F /141F /142F ABSOLUTE MAXIMUM RATINGS C haracteristic


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    PDF TIP145F/146F/147F /141F /142F 45F/146F/147 tip 147 TRANSISTOR TIP147F TIP146F TIP145F

    GE636

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145T/146T/147T HIGH DC CURRENT GAIN-MIN hFE=1000 @ V ce = -4 V , lc = - 5 A T O -2 2 0 MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE C o m p le m e n t to TIP140T/141T/142T


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    PDF TIP145T/146T/147T TIP140T/141T/142T GE636

    MPSU52

    Abstract: transistor tip 46 MPS-U52 TIP 41 transistor tip142 darlington transistor tip 142
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN T IP I 40 Darlington Com plem entary Silicon Power Transistors TIP 141* . . . designed for general-purpose amplifier and low frequency switching applications. T IP I 4 2 * • • • High DC Current Gain — Min hpE = 1000 @ Iq = 5 A, V ^ e = 4 V


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    PDF TIP140, TIP145 TIP141, TIP146 TIP142 TIP147 MPS-U52 MPSU52 transistor tip 46 MPS-U52 TIP 41 transistor tip142 darlington transistor tip 142

    B0738

    Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073
    Text: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m


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    PDF BD734, BD736, BD738 BD733, BD735, BD737 B0738 b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073

    B0638

    Abstract: BD638 TIP 122 100 V BD636 B0738 BD637 tip 42 darlington complementary power amplifier tip 142 BD634 73 5302
    Text: BD634, BD636, BD638 PNP EPIBASE POWER TRANSISTORS IPRELIMINARY 873 Amplifier Switch Complementary Output Stages Complementary with BD633, BD635, BD637 mechanical data •— 6 , 0 - o ss l-i ! i J — 1.3 r r - - 16,5 , TT , I * ri | i * t ^ 0.05 thick Base' j i g


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    PDF BD634, BD636, BD638 BD633, BD635, BD637 BD634 BD636 B0638 BD638 TIP 122 100 V B0738 BD637 tip 42 darlington complementary power amplifier tip 142 73 5302

    tip146

    Abstract: tip 146 TIP145 tip147 147 B transistor
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSÌSTOR TIP145/146/147 HIGH DC CURRENT GAIN MIN hFE* 1000 @ V c e = *4V, IC * -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3P Complement to TIP140/141/142 ABSOLUTE MAXIMUM RATINGS


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    PDF TIP145/146/147 TIP140/141/142 TIP145 TIP146 TIP147 TIPI45/146/147 tip146 tip 146 TIP145 tip147 147 B transistor

    darlington tip

    Abstract: tip 127 texas BD 147 tip 127 texas instruments TIP5530 tip darlington pnp TIP 122 tip 127 darlington tip 42 TIP NPN BD633
    Text: Ptot@ Typ type NPN PNP TIP 35 B TIP 36 B 90 80 25 25 100 1,5 TIP 35 C TIP 36 C 90 100 25 25 100 1,5 TIP 41 TIP 42 65 40 6 15 75 3 TIP 41 A TIP 42 A 65 60 6 15 75 3 TIP 41 B TIP 42 B 65 80 6 15 75 3 TIP 41 C TIP 42 C 65 100 6 15 75 3 TIP 3055 TIP 5530 90 70


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    PDF BD738 darlington tip tip 127 texas BD 147 tip 127 texas instruments TIP5530 tip darlington pnp TIP 122 tip 127 darlington tip 42 TIP NPN BD633

    TIP42C EQUIVALENT

    Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
    Text: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C


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    PDF TIP42, TIP42A. TIP42B. TIP42C TIP41, TIP41A, TIP41B, TIP41C TIP42 TIP42A TIP42C EQUIVALENT TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122

    IPI-41

    Abstract: TIP147 morocco diode sg 42
    Text: tipi 41 142 TIPI 46/1 47 S GS-THOMSON Kl g«LiM(S iO(gS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . TIP141, TIP142 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION • INTEGRATED ANTIPARALLEL


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    PDF TIP141, TIP142 TIP147 TIP141and O-218 TIP146 IPI-41 TIP147 morocco diode sg 42

    TIP 41 transistor

    Abstract: tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147
    Text: T Y P E S TIP 36, TIP36A, TIP36B, TIP36C P-N-P SINGLE-DIFFUSED M ESA SILICO N POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 3 5 , T IP 3 5 A , T IP 3 5 B , T IP 3 5 C


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    PDF TIP36, TIP36A, TIP36B, TIP36C TIP35, TIP35A, TIP35B, TIP35C TIP36 TIP36A TIP 41 transistor tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147

    tip 142

    Abstract: TIP142 TIP 147 TIP142 TIP147 P140 P145 TIP140 TIP141 TIP145 TIP146
    Text: S A N Y O SEMICONDUCTOR NPN TIP140 TIP141 TIP142 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP145 TIP146 TIP147 60-80-100 VOLTS, 10 AMPERE HIGH CURRENT GAIN hFE = 4000 typ. @3V, 5A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @ 5A MONOLITHIC CONSTRUCTION WITH BUILT-IN


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    PDF TIP140 TIP145 TIP141 TIP146 TIP142 TIP147 tip140, tip145 tip141, tip146 tip 142 TIP 147 TIP142 TIP147 P140 P145

    T1P147

    Abstract: TEXAS INSTRUMENTS TIP145 B0738 transistor tip 35c TIP5530 TIP 122 transistor TIP142 T1P146 3055 5c pnp TIP141
    Text: TYPES TIP145, TIP146, TIP147 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 1 4 0 , T IP 1 4 1 , TIP142 125 W at 25° C Case Temperature Min h p E 10-A Rated Collector Current 100 m j Reverse Energy Rating


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    PDF TIP145, TIP146, TIP147 TIP140, TIP141, TIP142 TIP145 T1P146 T1P147 T1P147 TEXAS INSTRUMENTS TIP145 B0738 transistor tip 35c TIP5530 TIP 122 transistor TIP142 3055 5c pnp TIP141

    BD633

    Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
    Text: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.


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    PDF BD633, BD635, BD637 BD633 BD635 BD637 darlington complementary power amplifier tip 142 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120

    tip 222 TRANSISTOR

    Abstract: TIP127 Application Note transistor tip 107 dioda switching TIP 122 transistor darlington circuit tip 42 Tl 5153 TIP121 TEXAS TIP122 texas instrument TIP120
    Text: TYPES TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR CO M PLEM EN TARY USE WITH TIP120, TIP121, TIP122 • 65 W at 25° C Case T emperature M in h F E o f 1000 at 3 V , 3 A • 5 A Rated Collector Current 50 mJ Reverse Energy Rating


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    PDF TIP125, TIP126, TIP127 TIP120, TIP121, TIP122 TIP125 TIP126 tip 222 TRANSISTOR TIP127 Application Note transistor tip 107 dioda switching TIP 122 transistor darlington circuit tip 42 Tl 5153 TIP121 TEXAS TIP122 texas instrument TIP120

    T1P122

    Abstract: PNP POWER TRANSISTOR T1P122 PNP POWER TRANSISTOR TO220 T1P142F TIP1411 T1P142 TIP125 TIP140F TIP141F rtip141
    Text: SAMSUNG SEMICONDUCTOR 14E INC O | 7 cU , 4 1 4 a 0007740 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I 26 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to T1P121 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Collector-Base Voltage


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    PDF O-220 TIP125 P140T/141T/142T T-33-29 T1P140--JT1P14V T1P122 PNP POWER TRANSISTOR T1P122 PNP POWER TRANSISTOR TO220 T1P142F TIP1411 T1P142 TIP140F TIP141F rtip141

    tipi transistor

    Abstract: rIP 47 TRANSISTOR
    Text: MOTOROLA Order this document by TIP140/D SEMICONDUCTOR TECHNICAL DATA NPN T IP 1 4 0 Darlington Com plem entary Silicon Power Transistors T IP 141* . . . designed for general-purpose amplifier and low frequency switching applications. T IP 1 4 2 * • •


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    PDF TIP140/D TIP140, TIP145 TIP146 TIP142, TIP147 TMP147* 340D-02 tipi transistor rIP 47 TRANSISTOR

    OO3A

    Abstract: BL53 TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 darlington TIP142 power amplifier AFE1000
    Text: TIP145 TIP146 TIP147 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m o n o lith ic D a rlin g to n c irc u it fo r audio o u tp u t stages and general a m p lifie r and sw itch in g applications. SO T-93 plastic envelope. N-P-N com plem ents are T IP 1 4 0, TIP 141


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    PDF TIP145 TIP146 TIP147 OT-93 TIP140, TIP141 TIP142. TIP146 7Z77492 OO3A BL53 TIP140 TIP142 TIP147 darlington TIP142 power amplifier AFE1000

    gto Gate Drive circuit

    Abstract: TIP 133c transistor GTO SCR SCR GTO die N648 GTO MOTOROLA 12n06
    Text: EB108 Prepared by Al Pshaenich Power Products Applications RELATIVE EFFICIEN CIES OF MOTOROLA POWER SEMICONDUCTORS IN A PWM DC MOTOR CONTROLLER INTRODUCTION The prime requisite of a power switch, semiconductor or otherwise, is to transfer the maximum power to the


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    PDF EB108 EB108/D gto Gate Drive circuit TIP 133c transistor GTO SCR SCR GTO die N648 GTO MOTOROLA 12n06

    TIP1477

    Abstract: TLP147 k 3531 transistor TIP145F TIP146F TIP147F transistor K 3531 TIP147T pnp darlington to-220 10a
    Text: SAMSU NG SEM ICONDUCTOR INC 14E D B.Tab'llME GG077SG 1 I PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAltf' MIN hFE=1000 @ V c e = — 4 V , lc = -5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE


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    PDF 7UH112 aG077SG TIP145F/146F/147F TIP140F/141F/142F TIP145F TIP146F TIP147F TIP1477 TLP147 k 3531 transistor TIP145F TIP146F TIP147F transistor K 3531 TIP147T pnp darlington to-220 10a