TIP121 TEXAS Search Results

TIP121 TEXAS Result Highlights (5)

Part	Manufacturer	Description
54HC158/BEA	Rochester Electronics LLC	Replacement for Texas Instruments part number 5962-8682301EA. Buy from authorized manufacturer Rochester Electronics.
74167N	Rochester Electronics	Replacement for Texas Instruments part number SN74167N. Buy from authorized manufacturer Rochester Electronics.
74LS626N	Rochester Electronics LLC	Replacement for Texas Instruments part number SN74LS626N. Buy from authorized manufacturer Rochester Electronics.
54184J/B	Rochester Electronics LLC	Replacement for Texas Instruments part number SNJ54184J. Buy from authorized manufacturer Rochester Electronics.
54ALS113AJ/B	Rochester Electronics LLC	Replacement for Texas Instruments part number SNJ54ALS113AJ. Buy from authorized manufacturer Rochester Electronics.

TIP121 TEXAS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
tip122 tip127 audio amp Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc	Original	TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 220AB tip122 tip127 audio amp TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS	PDF
MJ3001 equivalent Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc	Original	MJ2955 2N3055) MJ2955A 2N3055A) MJ2500 MJ2501* MJ3000 MJ3001* TIP73B TIP74 MJ3001 equivalent MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement	PDF
motorola MJ15001 Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —	Original	MJ15001 MJ15002 MJ15002 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A motorola MJ15001 BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139	PDF
TIP142 TRANSISTOR REPLACEMENT Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V	Original	TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP73B TIP74 TIP74A TIP74B TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142	PDF
2SC105 Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp	Original	2N4918, 2N4919, 2N4920 2N4921 2N4923* TIP73B TIP74 TIP74A TIP74B TIP75 2SC105 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent	PDF
All similar transistor 2sa715 Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc	Original	BD243B, BD244B BD243C, BD244C BD243B BD243C* BD244C* TIP73B TIP74 All similar transistor 2sa715 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference	PDF
BU108 Abstract: 2SC1629 equivalent BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:	Original	BUX41 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC1629 equivalent BDX54 BU326 BU100	PDF
2SA1046 Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.	Original	BUX85 BUX85 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SA1046 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100	PDF
mje15033 replacement Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.	Original	MJE341 MJE344 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje15033 replacement BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100	PDF
BU108 Abstract: TIP105 Darlington transistor BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —	Original	MJE2361T MJE2360T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 TIP105 Darlington transistor BDX54 BU326 BU100	PDF
MJ15023 EQUIVALENT Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —	Original	MJ15023 MJ15025 MJ15025 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJ15023 EQUIVALENT MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100	PDF
mje15033 replacement Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver	Original	2N3055 2N6576 2N6577 2N6578 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement	PDF
Circuit details of BD237 equivalent Abstract: BD237-10 BD237 similar BU108 bd237 equivalent 2SC7 bd237 pin assignment 2SD424 2SC495 BUX98A Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD237 Plastic Medium Power Silicon NPN Transistor 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD237 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 Circuit details of BD237 equivalent BD237-10 BD237 similar BU108 bd237 equivalent 2SC7 bd237 pin assignment 2SD424 2SC495 BUX98A	PDF
bd135 TRANSISTOR REPLACEMENT GUIDE Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc	Original	BD135 BD137 BD139 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd135 TRANSISTOR REPLACEMENT GUIDE transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary	PDF

MJE3055 to247 Abstract: Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD2955 PNP MJD3055 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix	Original	MJD2955 MJD3055 MJE2955 MJE3055 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJE3055 to247 Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100	PDF
IC 3526 Abstract: transistor MJ15024 tip3055 equivalent RCA1C13 BU108 2N6277 applications MJ3247 BDX54 motorola MJ3000 2N3791 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD802 Plastic High Power Silicon PNP Transistor 8 AMPERE POWER TRANSISTORS PNP SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 1.0 Adc	Original	BD802 BD802 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C IC 3526 transistor MJ15024 tip3055 equivalent RCA1C13 BU108 2N6277 applications MJ3247 BDX54 motorola MJ3000 2N3791 equivalent	PDF
BU108 Abstract: MJ15024 MOTOROLA transistor 2N3055 transistor MJ15022 BDX54 MJ15024 MJ15025 BUV11 equivalent application notes MJ15024 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ15022 MJ15024 * Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —	Original	MJ15022 MJ15024 MJ15024 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 MJ15024 MOTOROLA transistor 2N3055 transistor MJ15022 BDX54 MJ15024 MJ15025 BUV11 equivalent application notes MJ15024 BU326 BU100	PDF
2N4922 Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A	Original	BUV23 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N4922 BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482	PDF
2SB631 Abstract: equivalent 2n6488 BU108 2SA1046 2SC2233 2N6488 MOTOROLA Motorola 3-351 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488* PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes — hFE = 20 – 150 @ IC = 5.0 Adc	Original	2N6487, 2N6490 2N6488, 2N6491 220AB 2N6487 2N6488* 2N6491* TIP73B 2SB631 equivalent 2n6488 BU108 2SA1046 2SC2233 2N6488 MOTOROLA Motorola 3-351 BU326 BU100	PDF
T1P122 Abstract: Transistor TL 31 AC PNP POWER TRANSISTOR T1P122 TIP12O T1P140 TIP120 TIP121 TIP125 TIP126 TIP127 Text: TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS _ DECEMBER 1971 - REVISED MAY 1993 • Designed for Complementary Use with TIP125, TIP126 and TIP127 • 65 W at 25°C Case Temperature • 5 A Continuous Collector Current • Minimum hFE of 1000 at 3 V, 3 A	OCR Scan	tip120, tip121, tip122 TIP125, TIP126 TIP127 O-220 TIP120 TIP121 T1P122 Transistor TL 31 AC PNP POWER TRANSISTOR T1P122 TIP12O T1P140 TIP125 TIP127	PDF
T1P121 Abstract: texas instruments tip122 texas instruments tip127 TIP121 TIP121 TEXAS T1P122 Text: TYPES TIP120, TIP121. TIP122 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR COM PLEM EN TARY USE WITH TIP125, TIP126, TIP127 65 W at 25°C Case Temperature • Min hpE ° f 1000 at 3 V , 3 A • 5 A Rated Collector Current • 50 mJ Reverse Energy Rating	OCR Scan	TIP120, TIP121. TIP122 TIP125, TIP126, TIP127 TIP121, TIP120 T1P121 texas instruments tip122 texas instruments tip127 TIP121 TIP121 TEXAS T1P122	PDF
5B62C Abstract: T1P127 Text: TE XA S I N S T R Î O PT OÏ 8961726 TEXAS b5 IN STR ÏF \| COPTOT flTblYSb ODabTDO 4 62C 36900 TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 T-33-31 Designed For Complementary use with TIP120, TIP121, TIP122	OCR Scan	TIP125, TIP126, TIP127 TIP120, TIP121, TIP122 T-33-31 5B62C T1P127	PDF
mj 3055 npn Abstract: mt 3055 PIT 3055 TIP 122 transistor APPLICATION circuit tipL22 TIP 122 transistor TIP 42 transistor TIP122 texas instrument TRANSISTOR tip122 BD 147 Text: TY P ES TIP120, TIP121, TIP122 N-P-N DARLINGTON-CONNECTED SILICON POWER TRAN SISTO RS D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH TIP 1 2 5 , T IP 1 2 6 , TIP127 • 65 W at 2 5 °C Case Temperature • Min h p E of • 5 A Rated Collector Current	OCR Scan	TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 TIP120 TIP121 TIP122 mj 3055 npn mt 3055 PIT 3055 TIP 122 transistor APPLICATION circuit tipL22 TIP 122 transistor TIP 42 transistor TIP122 texas instrument TRANSISTOR tip122 BD 147	PDF
TIP 122 Abstract: texas instruments tip122 T1P120 TIP122 texas instrument TEXAS INSTRUMENTS TIP120 TIP 122 transistor TRANSISTOR tip122 TIP121 TEXAS TIP120 TIP121 Text: TEXAS I N S T R -COPTO} 8961726 TEXAS bS INSTR D e \| flTblTEb □□3bflci4 E \| ~ 62C 3 6 8 9 4 OPTO TIPI 20, TIPI 21, TIPI 22 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 T -3 3 -2 9 Designed For Complementary use with TIP125, TIP126, T IP I27	OCR Scan	TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 T-33-29 to-22qab TIP120 TIP121 TIP 122 texas instruments tip122 T1P120 TIP122 texas instrument TEXAS INSTRUMENTS TIP120 TIP 122 transistor TRANSISTOR tip122 TIP121 TEXAS	PDF

TIP121 TEXAS Search Results

TIP121 TEXAS Result Highlights (5)

TIP121 TEXAS Datasheets Context Search

tip122 tip127 audio amp

MJ3001 equivalent

motorola MJ15001

TIP142 TRANSISTOR REPLACEMENT

2SC105

All similar transistor 2sa715

BU108

2SA1046

mje15033 replacement

BU108

MJ15023 EQUIVALENT

mje15033 replacement

Circuit details of BD237 equivalent

bd135 TRANSISTOR REPLACEMENT GUIDE

MJE3055 to247

IC 3526

BU108

2N4922

2SB631

T1P122

T1P121

5B62C

mj 3055 npn

TIP 122