Contextual Info: TJ100F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ100F06M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V)

Contextual Info: TJ100F04M3L MOSFET シリコンPチャネルMOS形 U-MOS TJ100F04M3L 1. 用途 • 車載用 • リレー駆動用 • DC-DCコンバータ用 • モータドライブ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 2.8 mΩ (標準) (VGS = -10 V)

Contextual Info: TJ100F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ100F06M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)

TJ1001

Abstract: TJ1004M TJ1004Y TChip Semiconductor SA MLF40 superheterodyne receiver GHz 2.2 GHz local oscillator
Contextual Info: Tchip GPS Receiver RF Front-End IC TJ1004 PRELIMINARY SPECIFICATION General Description Features TChip’s TJ1004 is a single chip RF front-end for Global Positioning System GPS receivers. The TJ1004 uses innovative design techniques and a leading-edge BiCMOS process

RF Receivers

Abstract: Dect antenna TJ1001 TChip Semiconductor SA 1200MHZ lna
Contextual Info: Tchip 1.2-2GHz Low Noise Amplifier TJ1001 ADVANCE INFORMATION Features General Description TChip’s TJ1001 is a low cost, low noise amplifier for the 1.22GHz band. It is designed primarily for application in the first stage of L-band RF receivers, such as GPS, cellular or DECT

Contextual Info: TJ100F04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ100F04M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = -10 V)

Contextual Info: TJ100F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ100F06M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)

Contextual Info: TJ100F06M3L MOSFET シリコンPチャネルMOS形 U-MOS TJ100F06M3L 1. 用途 • 車載用 • リレー駆動用 • DC-DCコンバータ用 • モータドライブ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 5.6 mΩ (標準) (VGS = -10 V)

Contextual Info: TJ100F04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ100F04M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)

TJ100F04M3L

Contextual Info: TJ100F04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ100F04M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)

Contextual Info: TJ100F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ100F06M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)

EMK063

Abstract: smk 630 140 VK105 EMK325 CH101 682V VCO 10G MK107 MK212 UMK107
Contextual Info: 당사제품에 관한 주의사항 당사제품을 사용하실 경우에는 사전에 반드시 읽어 주십시오. 주의사항 • 당 소프트웨어의 기재 내용은 2009년10월 현재의 것입니다. 기재 내용의 개선등을 위해 예고없이 변경할 수 가 있습니다. 따라

MK105

Abstract: UMK105 CH UJ05 UMK105 uj09
Contextual Info: 有关本公司产品的注意事项 请务必在使用本公司产品目录之前阅读。 注意事项 • 本软件中记载的内容是2009年10月现在的内容。本产品目录记载的内容由于产品的改良等原因发生变更时，恕不另行

XQ5VLX110

Abstract: XQ5VLX330T SX95T DS714 XQ5VFX130T ROCKETIO VIRTEX-5 LX110 UG190 UG191 UG195
Contextual Info: 74 Virtex-5Q FPGA Data Sheet: DC and Switching Characteristics DS714 v2.0 December 17, 2009 Product Specification Virtex-5Q FPGA Electrical Characteristics Virtex -5Q FPGAs are available in -2 and -1 speed grades, with -2 having the highest performance. Virtex-5Q FPGA

EE-25 transformer

Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
Contextual Info: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: SCHOTTKY BARRIER DIODE NSQ03A04 3.3A/4ov FEATURES o Surface Mounting Device o Low Foward Voltage Drop ° Low Power Loss, High Effciency ° High Suige Capability ° 20 Volts thru 100 Volts Types Available o Packaged in 16mm Tape and Reel ° Not Rolling During Assembly

BYW29G-200

Abstract: TP806 136d
Contextual Info: BYW29G-200 HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 200 V trr 35 ns VF 0.85 V A K K FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

EMK063

Abstract: GMK325BJ106M K1R5 emk taiyo mk212 ST z212 taiyo yuden umk UMK325 F MK107 UMK107
Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2009. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.

sh120

Abstract: HP16192A taiyo yuden umk MK105 CH050CW UMK063 uj09 CH820JT SMD CAPACITOR CODE b7
Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2009. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.

Contextual Info: 3flE » GENL INST R/ POUER • 30^ 0 13 7 0 D Q 4 4 0 3 3 T -Û 3 -1 7 BYV32-50 THRU BYV32-200 FAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage - 50 to 150 Volts Current - 18.0 Amperes f e a tu r e s TO-220CT 420 [10.671. .155 P.94 . .05S 1.40 * 1RS¿1.14)

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

diode byt 11600

Abstract: fast diode byw 98 200 BYW 200 fast diode ifm "40 A" transil 30 V diode byt 45 BYT230PIV-400 BYW 62 RECTIFIER DIODES SGS rectifier diode for max 1.5A fast diode ifm if 40 A transil
Contextual Info: BYT 01-200 →400 FAST RECOVERY RECTIFIER DIODES FAST RECOVERY RECTIFIER VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING SUITABLE APPLICATION FREE WHEELING DIODE IN CONVERTERS AND MOTORS CIRCUITS RECTIFIER IN S.M.P.S.