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    TK12 Search Results

    TK12 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TK125V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 24 A, 0.125 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
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    TK12 Price and Stock

    Toshiba America Electronic Components TK125V65Z,LQ

    MOSFET N-CH 650V 24A 5DFN
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    DigiKey TK125V65Z,LQ Cut Tape 10,000 1
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    TK125V65Z,LQ Digi-Reel 10,000 1
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    TK125V65Z,LQ Reel 10,000 2,500
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    • 10000 $2.2
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    Mouser Electronics TK125V65Z,LQ 2,423
    • 1 $5.47
    • 10 $3.69
    • 100 $2.66
    • 1000 $2.2
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    Toshiba America Electronic Components TK12P50W,RQ

    PB-F POWER MOSFET TRANSISTOR DPA
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    DigiKey TK12P50W,RQ Digi-Reel 1,877 1
    • 1 $2.65
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    • 100 $2.65
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    TK12P50W,RQ Cut Tape 1,877 1
    • 1 $2.65
    • 10 $1.712
    • 100 $2.65
    • 1000 $0.87431
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    Littelfuse Inc IXTK120P20T

    MOSFET P-CH 200V 120A TO264
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    DigiKey IXTK120P20T Tube 234 1
    • 1 $27.43
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    • 100 $19.4116
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    Newark IXTK120P20T Bulk 517 1
    • 1 $26.88
    • 10 $21.64
    • 100 $20.44
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    Toshiba America Electronic Components TK12A60D(STA4,Q,M)

    MOSFET N-CH 600V 12A TO220SIS
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    DigiKey TK12A60D(STA4,Q,M) Tube 88 1
    • 1 $3.59
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    Mouser Electronics TK12A60D(STA4,Q,M) 119
    • 1 $3.26
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    • 100 $1.68
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    Newark TK12A60D(STA4,Q,M) Bulk 2,409 1
    • 1 $0.917
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    EBV Elektronik TK12A60D(STA4,Q,M) 19 Weeks 50
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    Toshiba America Electronic Components TK12A60W,S4VX

    MOSFET N-CH 600V 11.5A TO220SIS
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    DigiKey TK12A60W,S4VX Tube 79 1
    • 1 $4.76
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    Mouser Electronics TK12A60W,S4VX 111
    • 1 $4.45
    • 10 $3.63
    • 100 $2.31
    • 1000 $1.78
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    Bristol Electronics TK12A60W,S4VX 450 1
    • 1 $6.3336
    • 10 $4.1168
    • 100 $2.7443
    • 1000 $2.5968
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    Quest Components TK12A60W,S4VX 360
    • 1 $8.4825
    • 10 $8.4825
    • 100 $3.9585
    • 1000 $3.6758
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    TK12 Datasheets (107)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK12 Dynex Phase Control Thyristor Original PDF
    TK12 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    TK12 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    TK-120 Jonard Tools Tools - Fiber Optics and Accessories - TERMINATION KIT FC/SC/ST CONN Original PDF
    TK1201 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    TK1201 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    TK1202 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    TK1202 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    TK1204 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    TK1204 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    TK1205800000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 12P SIDE ENTRY 5MM PCB Original PDF
    TK1206 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    TK1206 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    TK1208 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    TK1208 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    TK120V Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    TK120V Silec Semiconductors Shortform Data Book 1976 Short Form PDF
    TK121 Caddock Electronics Low TC Precision Radial-Lead Film Resistors Original PDF
    TK-121 Jonard Tools FIBER PREP KIT Original PDF
    TK1210 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF

    TK12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tk12a65d

    Abstract: tk12a65
    Text: TK12A65D MOSFETs Silicon N-Channel MOS π-MOS TK12A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)


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    TK12A65D O-220SIS tk12a65d tk12a65 PDF

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    Abstract: No abstract text available
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: TK12J60U Category: Transistors /Power MOSFET/Nch 500V<VDSS 700V


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    TK12J60U 16-Apr-09 PDF

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    Abstract: No abstract text available
    Text: TK12X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK12X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.38 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


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    TK12X60U PDF

    K12J55D

    Abstract: SC-65 tk12j55
    Text: TK12J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12J55D Switching Regulator Applications 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 +0.3 -0.25 Symbol Rating Unit Drain-source voltage VDSS 550 V Gate-source voltage


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    TK12J55D K12J55D SC-65 tk12j55 PDF

    K12A50D

    Abstract: TK12A50D K12a50 K12A50D* VDD400 K*A50D
    Text: TK12A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK12A50D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.45 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0S (標準)


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    TK12A50D SC-67 2-10U1B 20070701-JA K12A50D TK12A50D K12a50 K12A50D* VDD400 K*A50D PDF

    K12A60U

    Abstract: TK12A60U k12a60 code MCV marking MCV
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


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    TK12A60U K12A60U TK12A60U k12a60 code MCV marking MCV PDF

    K12A53D

    Abstract: TK12A53D
    Text: TK12A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK12A53D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.5Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


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    TK12A53D SC-67 2-10U1B 20070701-JA K12A53D TK12A53D PDF

    TK12D60U

    Abstract: No abstract text available
    Text: TK12D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12D60U Switching Regulator Applications Unit: mm 10.0±0.3 Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


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    TK12D60U TK12D60U PDF

    K12A50D

    Abstract: K12a50 tk12a50 toshiba marking code transistor k12a50d TK12A50D K*A50D K12A TK-12A
    Text: TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


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    TK12A50D K12A50D K12a50 tk12a50 toshiba marking code transistor k12a50d TK12A50D K*A50D K12A TK-12A PDF

    TK11100CS

    Abstract: TK111xxCS TK11100C TK11100 SOT23-5 regulator code 02 TK11100CS-G TK121
    Text: POWER&RF Positive LDO regulator IC 正出力低飽和レギュレータIC TK111xxCS-G,TK11100CS-G,TK121xxCS-G DESCRIPTION The TK111xxCS-G, TK11100CS-G and TK121xxCS-G are low dropout linear regulators with on/off control, which can supply 200mA load current.


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    TK111xxCS-G TK11100CS-G TK121xxCS-G TK111xxCS-G, TK121xxCS-G 200mA TK111xxCS-G. TK11100CS TK111xxCS TK11100C TK11100 SOT23-5 regulator code 02 TK121 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


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    TK12A55D PDF

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    Abstract: No abstract text available
    Text: TK12E60W MOSFETs Silicon N-Channel MOS DTMOS TK12E60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


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    TK12E60W O-220 PDF

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    Abstract: No abstract text available
    Text: TK12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.43 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)


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    TK12A45D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


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    TK12A55D PDF

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    Abstract: No abstract text available
    Text: TK12A65D MOSFETs Silicon N-Channel MOS π-MOS TK12A65D 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)


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    TK12A65D O-220SIS PDF

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    Abstract: No abstract text available
    Text: TK12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK12J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V 1.0 0.3 0.25 5.45 ± 0.2 5.45 ± 0.2 4.8 MAX. Unit


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    TK12J60U PDF

    K12A55D

    Abstract: No abstract text available
    Text: TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII TK12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


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    TK12A55D K12A55D PDF

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    Abstract: No abstract text available
    Text: TK12J60W MOSFETs Silicon N-Channel MOS DTMOS TK12J60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA)


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    TK12J60W PDF

    K12A60U

    Abstract: K12A k12a60
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


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    TK12A60U K12A60U K12A k12a60 PDF

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    Abstract: No abstract text available
    Text: TK12Q60W MOSFETs Silicon N-Channel MOS DTMOS TK12Q60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


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    TK12Q60W PDF

    TK12P60W

    Abstract: No abstract text available
    Text: TK12P60W MOSFETs Silicon N-Channel MOS DTMOS TK12P60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


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    TK12P60W TK12P60W PDF

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    Abstract: No abstract text available
    Text: TK12E60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12E60U Switching Regulator Applications Unit: mm 10± 0.3 2.74 13.9± 0.5 25°C) Rating Drain-source voltage VDSS 600 V Gate-source voltage VGSS r30 V (Note 1) ID 12 Pulse (t 1 ms)


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    TK12E60U 10trolled PDF

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    Abstract: No abstract text available
    Text: TK12 M ITEL Phase Control Thyristor SEMICONDUCTOR Supersedes O ctober 1995 version, DS4252 - 3.2 DS4252 - 3.3 APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS V DRM _. 2000V 75A Jt AV 1400A TSM


    OCR Scan
    DS4252 100mA, PDF

    12N05L

    Abstract: 748U STK12N
    Text: SGS-THOMSON ’[LiCTïMOOS * t7 TK12N05L TK12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TK 12N 05L S TK12N 06L . . . . . . . V dss R D S o n Id 50 V 60 V 0 .1 5 U 0 .1 5 Q 12 A 12 A AVALANC HE RUG G EDNESS TECHNO LO G Y


    OCR Scan
    STK12N05L STK12N06L TK12N OT-82 OT-194 STK12N05L/STK12N06L 12N05L 748U STK12N PDF