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    TK7A90E Search Results

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    TK7A90E Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK7A90E,S4X

    MOSFET N-CH 900V 7A TO220SIS
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    DigiKey TK7A90E,S4X Tube 47 1
    • 1 $2.75
    • 10 $2.75
    • 100 $1.3034
    • 1000 $0.89077
    • 10000 $0.84875
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    Mouser Electronics TK7A90E,S4X 385
    • 1 $2.81
    • 10 $2.53
    • 100 $1.33
    • 1000 $0.849
    • 10000 $0.848
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    Toshiba America Electronic Components TK7A90E

    Trans MOSFET N-CH 900V 7A 3-Pin TO-220SIS - Rail/Tube (Alt: TK7A90E,S4X)
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    Avnet Americas TK7A90E Tube 16 Weeks 50
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    • 100 $0.79443
    • 1000 $0.75369
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    Win Source Electronics TK7A90E 28,639
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    • 100 $0.759
    • 1000 $0.506
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    Toshiba America Electronic Components TK7A90E,S4X(S)

    Trans MOSFET N-CH Si 900V 7A 3-Pin(3+Tab) TO-220SIS Tube
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    Verical TK7A90E,S4X(S) 300 61
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    • 100 $1.3602
    • 1000 $1.3057
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    Toshiba America Electronic Components TK7A90E,S4X(S

    Mosfet, N-Ch, 900V, 7A, To-220Sis; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:7A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Toshiba TK7A90E, S4X(S
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    Newark TK7A90E,S4X(S Bulk 19 1
    • 1 $2.58
    • 10 $2.26
    • 100 $1.91
    • 1000 $1.67
    • 10000 $1.42
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    EBV Elektronik TK7A90E,S4X(S 19 Weeks 50
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    Toshiba America Electronic Components TK7A90ES4X(S

    Trans MOSFET N-CH 900V 7A 3-Pin TO-220SIS Tube (Alt: TK7A90E,S4X(S)
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    Avnet Asia TK7A90ES4X(S 24 Weeks 50
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    Win Source Electronics TK7A90ES4X(S 98,130
    • 1 -
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    • 100 $0.813
    • 1000 $0.542
    • 10000 $0.542
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    TK7A90E Datasheets (1)

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    PDF
    TK7A90E,S4X Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V TO220SIS Original PDF

    TK7A90E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TK7A90E MOSFETs Silicon N-Channel MOS π-MOS TK7A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)


    Original     		TK7A90E O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK7A90E MOSFETs Silicon N-Channel MOS π-MOS TK7A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)


    Original     		TK7A90E O-220SIS PDF

    gt50jr22

    Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
    Text: System Catalog May 2014 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g –2 Types and Applications of Switching Power Supplies Types of DC-DC converters embedded in various


    Original     		SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W PDF