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    TK9J90E Price and Stock

    Toshiba America Electronic Components TK9J90E,S1E

    MOSFET N-CH 900V 9A TO3P
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    DigiKey TK9J90E,S1E Tube 3,802 1
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    Mouser Electronics TK9J90E,S1E 3,597
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    Toshiba America Electronic Components TK9J90E

    Trans MOSFET N-CH 900V 9A 3-Pin TO-3P(N) - Trays (Alt: TK9J90E,S1E)
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    Avnet Americas TK9J90E Tray 16 Weeks 25
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    Chip-Germany GmbH TK9J90E 2
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    Toshiba America Electronic Components TK9J90E,S1E(S

    Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-3PN
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    Verical TK9J90E,S1E(S 249 13
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    TME TK9J90E,S1E(S 225 1
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    Chip1Stop TK9J90E,S1E(S Bulk 249
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    EBV Elektronik TK9J90E,S1E(S 19 Weeks 25
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    TK9J90E Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK9J90E Toshiba Japanese - Transistors - Mosfets Original PDF
    TK9J90E Toshiba Transistors - Mosfets Original PDF
    TK9J90E,S1E Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V TO-3PN Original PDF

    TK9J90E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TK9J90E MOSFETs Silicon N-Channel MOS π-MOS TK9J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA)


    Original     		PDF TK9J90E

    Untitled

    Abstract: No abstract text available
    Text: TK9J90E MOSFET シリコンNチャネルMOS形 π-MOS TK9J90E 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 1.0 Ω (標準) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 720 V) (3)


    Original     		PDF TK9J90E

    Untitled

    Abstract: No abstract text available
    Text: TK9J90E MOSFETs Silicon N-Channel MOS π-MOS TK9J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA)


    Original     		PDF TK9J90E