TL188CN

Abstract: TL188 TL188C TL188CJ TL188I TL188IJ TL188M TL188MJ
Contextual Info: 352 TL188 SPST B I-M O S T ' t U ' J • ' < "/ *r — i? £ il o o # * J (T-O >f • > 1- ) 1375mW ll .O m W / t 2 5 * C t i± J (? *7 X • |-) 1025mW 8 .2 m W / t 2 5 t& ± T L 1 8 8 IJ, T L 188C J 1150mW 9.2mW/TC 25*CW_L TL188CN N n . TL188M J 7 - f 7 f> ^ B S iB ia u e m »

RMHA

Abstract: 0G347 tl1c
Contextual Info: TEXAS INSTR ÎLIN /IN TF C 3- SS dË J 0 9 61 72 4 TEXAS INSTFT LIN/INTFC 0 ^ 1 7 2 4 DG347M3 _55C l 34743 T 'S - i- ll DATA ACQUISITION CIRCUITS TYPES TL182, TL185, TL188, TL191 BI-MOS SWITCHES D2234, JUNE 1976-REVISED OCTOBER 1983 Functionally Interchangeble with Siliconlx

DG186

Abstract: DG188 DG188A DG188B TL188 TL188IJ TL188MJ TL188CN
Contextual Info: DG186, 187, 188 spdt jf e t t 7- - □y • 7.4 7 ? o o^ ) S iliconix —35 ! — TL188 ' ' 7 s< "j = 5- SPST B I-M O S 7 =. 7 rV • = > v y ^ * IJ S P S T B I-M O S * / V '> -y ? n y • -y^-X % x - r -y P ch -JF E T Ö , •* > - i & m * ± T -#- n ( ± 1 0 V ) T' i i l i —

TL185CN

Abstract: TL185CJ T25R 251C TL185 TL185CNS TL185I TL185IJ TL185IN TL185M
Contextual Info: - 350 — TL185 DPST B I - M O S y ^ P '< -, f — ì> è J T O 'f • |- J (/7 X [•) • N NS « * T I a ? S S B lg T '< 'i X • 9 4 -7 1375 mW 1 1 .0 m W /r 25‘C « ± TL 185M J 1025mW B .2 m W /l: 2 51C H ± T L 1 8 5 IJ. TL 185C J 1150mW 9.2mW /*C

Contextual Info: TL182, TL185, TL188, TL191 BI-MOS SWITCHES D2234, JUNE 1976-REVISED SEPTEMBER 1986 F unctionally Interchangeable w ith Siliconix D G 182, D G 185, D G 188, DG191 w ith Same Term inal A ssig n m e nts M o n o lith ic C o n stru ctio n A d ju sta b le Reference V oltage

TL188CN

Abstract: DG188 TL188 TL188C TL188CJ TL188I TL188IJ TL188M TL188MJ
Contextual Info: —35 ! — SPST TL188 B I-M O S ' ' 7 s < " j =5- 7 =. 7 rV • = > v y ^ * IJ S P S T B I-M O S * / V '> -y ? n y • -y^-X % x - r -y P ch -JF E T Ö , •* > - i & m * ± T -#- n ± 1 0 V T' i i l i — > h n x u y y 3 ^ F t E r S i T - t Ó f c ^ i T T L , M O S , C M O S * ^ -y 9 f r b ififè

TL182CN

Abstract: TL182IN TL182 TL182C TL182CJ TL182I TL182IJ TL182M TL182MJ
Contextual Info: - 348 TL 182 J J T D SPST BI-MOS V y 4 •. — h (7'7X -^9> n N T ^ - U '7 £ ta * 1375mW 1025mW 115QmW • X -Í (OO#) t V n M X ■? 4 7 ll-0mW/*C 8.2mW/*C 9.2mW/'C 25*C 2 s rw ± 25*CÜLb lg] i . TL182MJ TL182IJ, TL182CJ TL182IN, TL182CN ^œinnaiisÈEi»

TL182N

Contextual Info: TL182, T U 85, TL188, TL191 Bl M O S SW ITCHES D2234, JUNE 1 97 6 - R EV ISED SEPTEM BER 1986 F u n c tio n a lly In te rc h a n g e a b le w it h S ilic o n ix D G 1 8 2 , D G 1 8 5 , D G 1 8 8 . D G 1 9 1 w it h S am e T e rm in a l A s s ig n m e n ts •

DG185

Abstract: DG185A DG185B TL185 TL185CJ TL185IJ TL185MJ
Contextual Info: DG1 83, 184, 185 D P S T JF E T 7 tay-X-f 7 » f a 7 Jl- (oof) Silicon ix 34 9 TL185 DPST B I-M O S T ^ P ?' • y - J > D P S T B I-M O S y P c h -JF E T / V '> y ? íg jg c o « í g T a ^ • x -f •> * -f V f ô t Æ l i ^ T •*- a ^ A # f § - ^ Ï Ë H

TL182CN

Abstract: TL182MJ S25V TL182 TL182C TL182CJ TL182I TL182IJ TL182M tl182in
Contextual Info: 347 TL182 SPST BI-MOS • X'f "J T I V-i >- s r a i o i-iv iw o -t / 'j v y v > v ^ v • -i y v v , ■y P c h - J F E T ¿ f f l V ' t i i 9 , * > ffitfc i i £ T -*- « ^ A t J ^ + 1 0 V "C43;t£—^ K lf f c f c jf t T V 'S . >hn u y '> s « E £ : i E g T ' # 5 f c ì i > , T T L , M O S, CM O S v V y Z

TL185CN

Abstract: TL185 TL185C TL185CJ TL185I TL185IJ TL185M TL185MJ
Contextual Info: 34 9 TL185 DPST BI-M O ST ^P?' • y - J > D P S T B I-M O S y P c h -JF E T / V '> y ? íg jg c o « í g T a ^ • x -f •> * -f V f ô t Æ l i ^ T •*- a ^ A # f § - ^ Ï Ë H ± 1 0 V T '(ïiï'- ^ f£ .Æ fc n T V '- S . Î f c 3 > h P - ; i , A Æ W X U 7 y H

rx 3152

Abstract: A1306 2Q394 IC LP7 A-1306 500R BFP405 BGC405 Q62702-G0091 RX82 equivalent
Contextual Info: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe

AS080447-33N

Abstract: l0422 IA2410 C22A c2f sot AS120252-9R3N IA4910 C2F SOT23 PD85006L-E PD85035S-E
Contextual Info: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm

FPD200P70

Abstract: transistor marking code 1325 RO29 "IPC 1752" gold L130
Contextual Info: FPD200P70 Data sheet v4.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

b 857 W3

Abstract: fpd200p70 transistor marking code 1325 18GHZ TL11 TL22 VG07 filtronic Solid State
Contextual Info: FPD200P70 HIGH FREQUENCY PACKAGED PHEMT PACKAGE FEATURES: • • • • • • Data sheet v2.3 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS GENERAL DESCRIPTION:

WL 系列

Contextual Info: TOKEN TRWL 貼片開放式繞線超薄高電流電感 貼片繞線電感 超薄高電流電感 產品簡介 德鍵電子生產的繞線貼片電感 - 採用高 共振頻率的陶瓷體線繞結構，超小體積 電感，可提供較高的 Q 值超薄型，

cmx7141

Abstract: VR1 j18 C4234 DE6181 VC-TCXO 19.2mhz 19M2
Contextual Info: CML Microcircuits COMMUNICATION SEMICONDUCTORS DE6181 Demonstration Kit User Manual UM6181/5 September 2011 Provisional Issue Features • CMX7141 and CMX618 Device Evaluation  C-BUS interface  Function ImageTM load from C-BUS or serial Flash memory

ldmos nec

Contextual Info: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different

fet amplifier schematic

Abstract: high end amplifier schematics TL74 of 3842 c cor hybrid amplifier modules MITSUBISHI Microwave TL71 high power fet amplifier schematic TL78 mitsubishi gaAs 1998
Contextual Info: Design and Performance of a 1.6-2.2 GHz Low-Noise, High Gain Dual Amplifier in GaAs E-pHEMT White Paper Abstract — The design and realization of a dual lownoise amplifier LNA module in the 2 GHz band suitable for balanced receiver front-end application

AMMP-6130-TR1G

Abstract: C16 SJ
Contextual Info: AMMP-6130 30 GHz Power Amplifier with Frequency Multiplier x2 in SMT Package Data Sheet Description Features Avago Technologies AMMP-6130 is a high gain, narrowband doubler and output power amplifier designed for DBS applications and other commercial communication

TL272

Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use