Mys 99 178
Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Text: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B
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AA994896G
2A-M18KS08-WP-C1
1234C
11PFA
14PFA
1001D
VAP21001C
VAP21004H
VAP21015C
2001G
Mys 99 178
MYS 99
cj1w-cort21
NT31C-ST143-Ev3
MYS 99 133
E5CS-R1KJ
8203-M
TL-X1R
4503m
st MYS 99 102
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MV1Y
Abstract: mv-1y MC12210 Nippon capacitors
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Serial Input PLL Frequency Synthesizer The MCI 2210 is a 2.5GHz Bipolar monolithic serial input phase locked loop PLL synthesizer with pulse–swallow function. It is designed to provide the high frequency local oscillator signal of an RF transceiver in
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3PHX32140-1
MC1221OID
MV1Y
mv-1y
MC12210
Nippon capacitors
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AL2005H
Abstract: v562 20MHZ ALC005X ALC00
Text: 20MHz ~ 170MHz FSPLL AL2005H DECEMBER 1998. Ver1.0 General Description Features The AL2005H is a Phase-Locked Loop PLL frequency synthesizer constructed in CMOS on single monolithic structure. The PLL Macrofunctions provide frequency multiplication capabilities. The output
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20MHz
170MHz
AL2005H
AL2005H
v562
20MHZ
ALC005X
ALC00
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uPD30200 VR4300
Abstract: VR4300 UPD30200GD-100 bc 107 common base h parameters capacitor CTC1 U10504E VR4300TM VR4305 VR4310 UPD30210GD-167-MBB
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD30200, 30210 VR4300TM, VR4305TM, VR4310TM 64-BIT MICROPROCESSOR The µPD30200 VR4300 , 30200-133 (VR4305), and 30210 (VR4310)Note are high-performance, 64-bit RISC (Reduced Instruction Set Computer) type microprocessors employing the RISC architecture developed by MIPS.
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PD30200,
VR4300TM,
VR4305TM,
VR4310TM
64-BIT
PD30200
VR4300)
VR4305)
VR4310
uPD30200 VR4300
VR4300
UPD30200GD-100
bc 107 common base h parameters
capacitor CTC1
U10504E
VR4300TM
VR4305
UPD30210GD-167-MBB
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uPD30210-xxx
Abstract: VR4300 upd30200 NEC VR4300 uPD30200 VR4300 capacitor CTC1 VR4310 U10504E VR4300TM VR4305
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD30200, 30210 VR4300TM, VR4305TM, VR4310TM 64-BIT MICROPROCESSOR The µPD30200-100, 30200-133 VR4300 , 30200-80 (VR4305), and 30210 (VR4310) are high-performance, 64bit RISC (Reduced Instruction Set Computer) type microprocessors employing the RISC architecture developed by
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PD30200,
VR4300TM,
VR4305TM,
VR4310TM
64-BIT
PD30200-100,
VR4300)
VR4305)
VR4310)
64bit
uPD30210-xxx
VR4300
upd30200
NEC VR4300
uPD30200 VR4300
capacitor CTC1
VR4310
U10504E
VR4300TM
VR4305
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Untitled
Abstract: No abstract text available
Text: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,
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2SK1123
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smd 7636
Abstract: 7636 SMD resistors 1218 tc100 le TLT 221
Text: Fixed Resistors SM Db TECHNOLOGY SMD Strie» T o le ra n ce 5% 1% PRC 221 2010 2512 5% 2% o n r e q u e s t Pow er PRC t i l 1218 C a se size (P?o) U m ax 1 1% 5% (2% o n re q u e s t ) 1 % (2% o n r e q u e s t l 1W 0.5W 1W 200V 200V 250V i ' E -se rie s
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-------------------TC1000
TC250
TC200
TC100
PA08-A
PRC201
PRC111
PRC221
smd 7636
7636
SMD resistors 1218
tc100 le
TLT 221
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LR7109
Abstract: No abstract text available
Text: 4 I THJS DftAWJNG IS UNPUBL J5HED. C copyftJâHT 19 3 i BY AHP INCORPORATED. [ .19 RELEASED FOR PUSL IC/UJGN REVISIONS ÛJST 1A ALL RIGHTS RESERVED. de 5c r ;pticn 2EAPR95 REV 8 REDRAW / 0720-0578-95 ML E NB D 22-16 AWG SOLID OR STRANDED 0 4 .34 ± 0 . 0 8
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2EAPR95
LR7109
09MAV94
I-SOO-522-S752
26mm2-
65mm2
509-32S
-32055A
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TLT 221
Abstract: 140S2 10MSA marking T08
Text: SGS-THOMSON T08 A RjflOÊSOIILIiÊTnMODIgi *7M > SENSITIVE GATE TRIACS FEATURES • It RMS = 0-8 A ■ V drm = 200 V to 600 V ■ Ig t S 10 mA ABSOLUTE RATING S (limiting values) Symbol IT(RMS) ITSM Value Unit RMS on-state current (360° conduction a n g le )
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Tj-25
TLT 221
140S2
10MSA
marking T08
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Untitled
Abstract: No abstract text available
Text: KM23G2000 G CMOS MASK ROM 2M-BH (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using silicon-gate CMOS process technology. • • • •
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KM23G2000
144x8
150ns
32-pln
32-pin
KM23C2000
KM23C2000G-20
KM23C2000G-25
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jalr
Abstract: UPD30111 DSRL32 mips16 instruction set
Text: ¿¿PD30111 NEC 22. INSTRUCTION SET The V r4111 has two types of instructions: 32-bit instructions MIPS III and 16-bit instructions (MIPS16). 22.1 MIPS III Instruction Each instruction of the MIPS III consists of 1 word (32 bits) located at a word boundary. Three instruction formats
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r4111
32-bit
16-bit
MIPS16)
uPD30111
jalr
DSRL32
mips16 instruction set
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SC35B
Abstract: 40526 SC40B 40528 SC35D SC41B PT40528 PT40530 40529 FIT V2
Text: T f*£> .3 5 0 '• T yp e No. '• ; *t rms Am p •v D R O M Volts • tS M Am ps 2.5 2,5 2.5 2.5 2.5 -2 .5 3 3 3 3 3 3 3 3 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 10 to 100 200 400 100 200 400 50 100 200 400 50 100
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PT40525
PT40526
PT40527
PT40528
PT40529
PT40530
PTSC35F
PTSC35A
PTSC35B
PTSC35D
SC35B
40526
SC40B
40528
SC35D
SC41B
PT40528
PT40530
40529
FIT V2
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LBGH
Abstract: No abstract text available
Text: SPV-1 500 1500W Single Output Power Supply • s e r ie s Fa-alur-us : f Unrveraa AC inp.,tFut1 ta rg e * ZV-S new lechnoocf ' AC inpul a d we surge current! hmding * & uitt-n i d ve PFC t in c t o n .P F r f .iiS ■ P 'o ie c to ris : S r e r i Qnaufl .■O v e re a ts .-O v s r w > ia s *
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U01XL
12ann-ij
LBGH
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114-1010
Abstract: TE 109-27 ti157 MXN-6
Text: AMP J • 001 Rev. M A R 91 *t m B i? *: (fô AMP m í't'T Æ) ± B * i - • i A • e - 4*Ä $4 i tt 108-5357-1 ^ 1. £ & fö Ü' Æ 15 IS 1.1 1*1 u 4T •> ¿ s ü ^ i i F ig . i o M m > • D -7 9 * 3 * £ ? OSÜDD-ÜBÍ, !£ $ £ ;£ •& > i s , #
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14AWG
114-1010
TE 109-27
ti157
MXN-6
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eg-1w
Abstract: No abstract text available
Text: Preliminary Data Sheet No. PD - 9.1664 International I R Rectifier H EXFET TRANSISTORS IRFG5210 3D COMBINATION N AND P CHANNEL 2 EACH 200 Volt, 1.60£2 (N and P channel ) H EXFET _ O D £ d\ G y iP y ¿ s is Product Summary The HEXFET technology is the key to International Rectifier’s P art N u m b e r
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IRFG5210
eg-1w
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c2502c
Abstract: C25-02C 455H5 100012B
Text: MULTILAYER CHIP NTC THERMISTORS O PE R A TIN G TE M P . -5 5 ~ + 1 2 5 °C ^ 7 D - /W A V E ^ ^ l7 a - /R E R flW ^ •W t 125"C«SZ Guaranteed up to 125°C. ■Large B constant for higher temperature sensing capability. ■Ideal for automatic mounting in bulk or from tapes because of front-rear
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106kPa
c2502c
C25-02C
455H5
100012B
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D6346
Abstract: No abstract text available
Text: HITAC H I/ MCU/nPU DeT| 4 4 ^ 5 0 4 4496204 HITACHI/ MCU/MPU 92D 12452 HD63463-H D C H a r d Disk Controller DESCRIPTION The HD63463 (HDC: Hard Disk Controller) is a CMOS device developed for use as a peripheral L S I for the 16-bit microprocessor HD68000 (M PU: Microprocessing U nit). The
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HD63463------------H
HD63463
16-bit
HD68000
HD68450
ST506/ST412/ST412HP
T-52-33-11
D6346
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N RfflD E3 [l [L[l©TriF3@0îDD©@ TDA7335 STEREO PREAMP + AMS + DOLBY B* NOISE REDUCTION PROCESSOR PRODUCT PREVIEW • DUAL CHANNEL PROCESSOR FOR PLAY BACK APPLICATIONS. ■ STEREO DOLBY B NR SYSTEM ■ LOW NOISE HEAD PREAM PLIFIER
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TDA7335
TDA7335
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IRFB40
Abstract: No abstract text available
Text: Data Sheet No. P06.022A International I R Rectifier IR2130D 3-PHASE BRIDGE Features •Herm etic ■Floatingchanneldesignedforbootstrap Product Summary operation ■ ■ ■ ■ ■ VOFFSET 400V max. lo+/- 200 mA / 420 mA VOUT 1 0 -20V ton/off typ. 675 & 425 ns
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IR2130D
IR2130D
IRFB40
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VR4200
Abstract: capacitor CTC1 VR4000 HPD30450R-80 NEC R4400
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT V r4200 64-BIT MICROPROCESSOR DESCRIPTION The /jPD30450 V r4200 is one of NEC's RISC (Reduced Instruction Set Computer) microprocessors, V r series™, and is a high-perform ance 64-bit m icroprocessor em ploying the RISC architecture developed by
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r4200TM
64-BIT
uPD30450
Vr4200)
Vr4200
Vn4200
h4200
IEU-1392
r4000,
capacitor CTC1
VR4000
HPD30450R-80
NEC R4400
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IRF 5408
Abstract: irf 5306 ali 3328 HT 4906 MP 1008 es 3728 lx JRC 3414 mt 5392 JRC 2746 NJU6575C
Text: NJU6575 4 JM t f y • l l 'T '^ L C D i ■ * n* NJU6575IÌ. t o i i m ' 7 F W LCOK 5Ya* t? , 4, 422t* 'VK D * JFT -iRAM, C P U f ^ it t H B S , XWW ¿’< 4 4 * lil< $ 1 ? m titz tl*? ' 8 f '4 - A 7 W k if c liy 'j7 jl- - i> $ -7 i- ix |c r .c p u * 't > ^
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NJU6575
NJU6575IÃ
NJU65750
NJU6575C
x134tr
NJU6575
68SCPUICÃ
I80SICPU
IRF 5408
irf 5306
ali 3328
HT 4906
MP 1008 es
3728 lx
JRC 3414
mt 5392
JRC 2746
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s5 arcnet
Abstract: ATI Research
Text: ARCNET Local Area Network Standard Copyright c 1990 ARCNET Trade Association 3365 N. Arlington Hts. Rd. Suite J Arlington Heights, IL 60004 (708)255-3003 FAX:(708)577-7276 All rights reserved by the ARCNET Trade Association. Revision History: Version Version
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32ATTACH
14-7F
82-BF
s5 arcnet
ATI Research
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internal structure of ic 4017
Abstract: 4518 CI
Text: C2MOS Logic TC74HC/HCT Series 7. Common Electrical Characteristics 7-1 Power Dissipation The power dissipation of CMOS device is composed of two components: one static, the other dynamic.The total power dissipation is the sum of static and dynamic power dissipation.
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TC74HC/HCT
internal structure of ic 4017
4518 CI
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FCE17
Abstract: TDA8751T A1GND tda8051 qpsk receiver
Text: P hilips S em ico n d uctors P roduct sp ecification Q P S K receiver TDA8051 FEATURES G E N E R A L D ES C R IPTIO N • High operating input sensitivity This TDA8051 is a m onolithic b ipolar IC intended for Q uadrature Phase S hift Key Q PSK dem odulation. It
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TDA8051
TDA8051
12-bit
FCE17
TDA8751T
A1GND
qpsk receiver
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