S T A 933

Abstract: TN931-20 20tn Thomson-CSF rm case A 933 S Thomson-CSF 891 mu 171 1100ARMS mu169 MU171
Contextual Info: thyristors ^ 80 Arm s thyristors ^ 80 Aeff THOMSON-CSF ^amb = 25°C Types •o Vr r m = V DRM ■TSM* 10 ms A (V) (A) 900 Arms / Tcase = 80°C TN TN TN TN TN TN 731 731 731 731 731 731 12 14 16 18 20 22 573 1200 1400 1600 1800 2000 2200 1100 Arms / Tcase = 80°C

tk 100 A

Abstract: TK18
Contextual Info: THOMSON ^▼ #7r m o i LU GENERAL PURPOSE & INDUSTRIAL s c s " HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A M U 86 MU 169 MU 171 STANDARD THYRISTORS Type VDRM V RRM •t r m s A Tcase ■t s m @ Tj max* vTO (A) (V) <°C) n dv/dt di/dt repetitive 'GT

ua733

Abstract: Video Amplifier 733 A733F GAIN22 733C
Contextual Info: JUA733/733C Signetics Differential Video Amplifier Product Specification Linear Products DESCRIPTION The 733 is a monolithic differential input, differential output, wide-band video am­ plifier. It offers fixed gains of 10, 100, or 400 without external components, and

Isolation Amplifiers

Contextual Info: CIRCUIT PRODUCTS Linear Optocouplers and Linear Isolation Amplifiers CP C lare’s fam ily of Linear O ptocouplers feature an infrared LED optically coupled with two phototransistors. One feedback input phototransistor is used to generate a control signal that provides a servom echanism to the

APT6060cn

Abstract: 0506015
Contextual Info: ADVANCED POüIER TECHNOLOGY o b lE D • DDDÜ7beJ I M T B A V P A d v a n ced P o w er Te c h n o l o g y D M APT6060CN APT5560CN APT6070CN APT5570CN Os POWER MOS IV 600V 10.5A 0.60Q 550V 10.5A 0.60Í2 600V 9.5A 0.70Q 550V 9.5A 0.70Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT6060CN

Abstract: 2SJ10 6060C BAVP APT5560CN APT5570CN APT6070CN
Contextual Info: ADVANCED POWER TECHNOLOGY blE D • □ 2 5 7 ‘iOT □ □ □0 7 t eJ IMT B A V P A d v a n ced W /A p o w e r rÆ ÊÊ T e c h n o l o g y POWER MOS IV APT6060CN APT5560CN APT6070CN APT5570CN 600V 550V 600V 550V 10.5A 10.5A 9.5A 9.5A 0.60Q 0.60Q

Contextual Info: Advance Information KM681000C Family 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS The • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% SAMSUNG'S advanced CMOS process technology.

Contextual Info: 7020^=} G o t m s i I S l •RHM BA10324A SILICON MONOLITHIC INTEGRATED CIRCUIT FEATURES 1 Internal frequency compensated for unity gain. 2) Wide power supply range: 3.0-32.0 V Single Supply) ±1.5~+16.0 V (Dual Supply) 3) Pin-compatible to the 324 type operational amplifier.

Contextual Info: ZEICH N U N G G ESCH ÜTZT DURCH C O P Y R IG H T 1 9 9 0 IN CX ln Ü) CM CO a: uj r r 2 O I u. 2 £ UJ Q 2 »< yi o CD 2 QC 2 O I I O Q < hl O N AMP D EUTSCH LAN D GMBH A L L E R EC H T E VO RBEHALTEN POLZ. PRO REIHE 2 3 4 5 6 7 8 9 70 11 12 13 14 15

ND921

Abstract: br 903
Contextual Info: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy autom atic insertion and better printed circuit board density. In addition to the diode characteristics for standard products

Contextual Info: m im MINI REEL PRODUCTS C O M P O N £l 5% Tolerance Chip Resistors tn Ordering Information □ □ J Type Code -61 41 65 45 = 1% Tol. = 1% Tol. = 5% Tol. = 5% Tol. - □ □ □ « u fc < 2 < H o is il on a miniReel in a miniBag on a miniReel

HJU6357

Abstract: NJU6357 NJU6357C
Contextual Info: NJU6357 3 . 5 * f 7 Z 7 - A am m NJU6357 lì, 32kHz 77-A7ÿ>/\'<, " j A f f ile t t T - V • * Z IW M tT Z ri m 3 ^ ^ - 3 - * ^ 5 U iziP>, PM, 7 7 - A, X ? —X, C D5 0 7 -!' > v-y —i'S^A ?öJÄI o T t . if c , 7 - A 7 h 7 y, - y ^ T ÎT T - £ A ! t- ê , 7

Contextual Info: 80 PLUS Verification and Testing Report 84.71% 83.21% YES TYPICAL EFFICIENCY 50% Load : AVERAGE EFFICIENCY : 80 PLUS COMPLIANT: 40 FSP/Sparkle FSP600-80GLC N/A 2006 ATX12V / EPS12V 2/17/2006 Ecos ID # Manufacturer Model Number Serial Number Year Type Test Date

S2800D

Abstract: S2800F S2800 S2800B 365r S2800A S2800M S2800C S2800 Series
Contextual Info: E SOLI» STATE 3875081 G E S O L ID 01 DlEJ 3A7S0A1 □□17754 01E STATE 17724 silicon Controlled Rectifiers _ File Number 890 S2800 Series 10-A Silicon Controlled Rectifiers TERMINAL DESIGNATIONS For Power Switching, Power Control Features: • 800V, 125 Deg. C Tj Operating

EN3716

Abstract: 2039A 2SB1511
Contextual Info: Ordering num ber: EN3716 2SB1511/2SD2285 PNP/NPN Epitaxial Planar Silicon Transistors No.3716 30V/20A Switching Applications Qm< o Applications • Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage : VcE sat = ••0.5V(PNP), 0.4VCNPN) max.

BA10324A

Abstract: 37013 2XRJ 3034
Contextual Info: TflEfl'ì'n 000*3121 i s i hrhm noNm MICROSYSTEMS BA10324A SILICON MONOLITHIC INTEGRATED CIRCUIT FEATURES 1 Internal frequency compensated for unity gain. 2) Wide power supply range: 3.0—32.0 V Single Supply) ±1.5-+16.0 V (Dual Supply) 3) Pin-compatible to the 324 type operational amplifier.

Contextual Info: Power Transistors 2SC3796, 2SC3796A 2SC3796, 2SC3796A Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • High, speed switching • High collector-base voltage VCbo • Low collector-emitter saturation voltage (Vce rsa»)

FFA.0S.304.ZLA

Abstract: EGG.1B.655 ZLLF17
Contextual Info: CONNECTORS FOR THE HIGHEST TEMPERATURE RANGE STECKVERBINDUNGEN FÜR HÖCHSTE TEMPERATURMESSBEREICHE THERMO SERIES Insight of our production 2 Einblicke in unsere Fertigung Cable assembling and system technology Vacuumtest with leakdetector Vakuumtest mit Leakdetektor

TDET500E

Abstract: Three-Five Systems TDET500A TDET500C 6K8k TDET500B TDET500 OPTO-4
Contextual Info: NPN SILICON PHOTOTRANSISTOR T1 PLASTIC PACKAGE TDET500 SERIES T H R E E - F I V E S Y S T E M S . IN C . FEATU R ES P A C X A E E O U T LIN E Excellent Spectral Match to Three-FWe Systems’ 940nm and 880nm Emitters Standard T1 3mm Plastic Package for Cost

Contextual Info: ThomasëBetts Two-Piece Connectors XD/P System THREE ROW, THREE CELL STRAIGHT MALE XD/P CONNECTORS PRESSFIT OR SOLDER POST 378-450 POSITIONS TWO CENTER MOUNTING FEATURES T O LR49571 P h y s ic a l P r o p e r t ie s In s u la tio n M a te ria l: G la s s fille d th e rm o p la s tic

3025

Abstract: CVA4501T
Contextual Info: 3 Channel-DC-Bias 1C for CRT Displays W U IO Q IW CORPORATION V Preliminary Data Sheet CVA4501 FEATURES GENERAL DESCRIPTION • • • • • The CVA4501 is a 3 Channel Video Output Bias Circuit designed to replace most of the discrete circuitry required to

Contextual Info: HD74UH08 2-input AND Gate The HD74UH08 is high speed CMOS two input AND gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed equivalent to LS-TTL series. The internal circuit of three stages construction with buffer provides wide noise margin and stable

AS66

Contextual Info: HAMAMATSU Si Photodiode S6626, S6838 PRELIMINARY DATA Feb.1997 High reliability photodiodes for visible light detection FEATURES #W ide operating temperature range: -40 to +110 1C •S m a ll deterioration in high tempetature and high humidity •V is ib le compensation filter is useless

RCM2037R

Abstract: X0010
Contextual Info: RCM2037R 16 characters x 2 line reflective-type, character module RCM2037R is a reflection TN-type, liquid crystal module incorporating a controller and driver LSI, with a display capacity of 16 characters on each of two lines. • • character pattern selected can be