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    TN3467 Search Results

    TN3467 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TN3467 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    TN3467 National Semiconductor Saturated Switches Scan PDF
    TN3467 National Semiconductor PNP Medium Power Transistors Scan PDF
    TN3467 National Semiconductor PNP Switching Transistor Scan PDF
    TN3467 National Semiconductor PNP Transistors Scan PDF
    TN3467 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    TN3467A Fairchild Semiconductor PNP Switching Transistor Original PDF
    TN3467A National Semiconductor PNP Saturated Switches Scan PDF
    TN3467A National Semiconductor PNP Switching Transistor Scan PDF

    TN3467 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D43C8

    Abstract: No abstract text available
    Text: Discrete POWER & Signal Technologies PNP Saturated Switches Device No. 2N5771 PN3640 PN4258 ST5771-1 TN3467A Case Style VCBO VCEO VEBO V Min (V) Min (V) Min TO-92 (92) 15 15 4.5 TO-92 (92) 12 TO-92 (92) 12 TO-92 (92) 15 TO-226 (99) 40 12 12 15 40 4 4.5 4.5


    Original     		PDF 2N5771 PN3640 PN4258 ST5771-1 TN3467A O-226 D43C8 O-202 D45C8 O-220 D43C8

    1N916

    Abstract: MMPQ3467 SOIC-16 TN3467A
    Text: TN3467A MMPQ3467 E C B E B E E B TO-226 B E C SOIC-16 B C C C C C C C PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF TN3467A MMPQ3467 O-226 SOIC-16 OT-223 1N916 TN3467A 1N916 MMPQ3467 SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: TN3467A TN3467A C B TO-226 E PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value


    Original     		PDF TN3467A O-226 OT-223 1N916

    PNP 3-224

    Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
    Text: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11


    Original     		PDF PN100 PN100A MMBT100 MMBT100A PN200 PN200A MMBT200 MMBT200A FPN330 FPN330A PNP 3-224 NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A

    2N4858 TEXAS

    Abstract: 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560
    Text: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt


    Original     		PDF O-126 O-126var 2S8549 2S8527 2S8528 2S81217 KSA931 2N3468 2S8733 2N4858 TEXAS 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560

    SIEMENS 5SN

    Abstract: 2N3406 UNITRODE DIODE 240 39 sot-89 2n3400 2N3483 2N3436 motorola
    Text: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt


    Original     		PDF O-126 O-126var 2S8549 2S8527 2S8528 2S81217 KSA931 2N3468 2S8733 SIEMENS 5SN 2N3406 UNITRODE DIODE 240 39 sot-89 2n3400 2N3483 2N3436 motorola

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


    Original     		PDF

    1N4548

    Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
    Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A


    Original     		PDF 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428

    8CP69

    Abstract: 8C304 2s81132 TO226AA 202-AA sk3262 2S8528 2S8549 SIEMENS 5SN 2SA885
    Text: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt


    Original     		PDF O-126 O-126var 2S8549 2S8527 2S8528 2S81217 KSA931 2N3468 2S8733 8CP69 8C304 2s81132 TO226AA 202-AA sk3262 SIEMENS 5SN 2SA885

    MPQ3467

    Abstract: 2N3467 TN3467 xl semi
    Text: 2N3467/TN3467/MPQ3467 NATL SEMI CONO 5 3 1 Jl A D I S C RE TE HE D g National . Semiconductor 2 N 3 4 6 7 TL/G/10100-11 S | -r-37- 15 M P Q 3 4 6 7 TL/Q/10100-7 ////// Ey i Bc GOBVEELi * T N 3 4 6 7 u u hSQLlBD TL/G/10100-8 P N P S w itc h in g T r a n s is to r


    OCR Scan     		PDF T-31-15 2N3467 TN3467 MPQ3467 TUG/10100-11 O-237 TL/G/10100-7 TL/G/10100-8 MPQ3467 2N3467 TN3467 xl semi

    2N3467

    Abstract: No abstract text available
    Text: 2N3467/TN3467/MPQ3467 ZWÄNational Juâ Semiconductor 2N3467 ^ TN3467 T L /G /1 0 1 0 0 -1 1 ^ ji 1 “ // MPQ3467 37 T L /G /1 0 1 0 0 -7 Bc T L /G /1 0 1 0 0 -8 PNP Switching Transistor Electrical Characteristics Symbol t a = 25°c unless otherwise noted


    OCR Scan     		PDF 2N3467/TN3467/MPQ3467 2N3467 TN3467 MPQ3467 2N3467

    Untitled

    Abstract: No abstract text available
    Text: S 3 S S M iC ^ N D U C T Q S ?,s TN3467A MMPQ3467 SOIC-16 PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. Absolute Maximum Ratings TA = 25°C unless otherwise noted


    OCR Scan     		PDF TN3467A MMPQ3467 SOIC-16 TN3467A

    Untitled

    Abstract: No abstract text available
    Text: S e M lO O N O iJQ T C W » TN3467A MMPQ3467 SOIC-16 PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5 ° C u n le s s o th e r w is e n o te d


    OCR Scan     		PDF TN3467A MMPQ3467 TN3467A SOIC-16

    MMPQ3467

    Abstract: SOIC-16 TN3467A
    Text: S e m i c o n d u c t o r ' TN3467A MMPQ3467 TN3467AI MMPQ3467 & D iscrete P O W E R & S ig n a l Technologies National SOIC-16 PNP Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d s a tu rated sw itching app lication s at currents to 8 0 0 m A . S o u rc e d fro m P ro c ess 7 0 .


    OCR Scan     		PDF TN3467A MMPQ3467 O-226 SOIC-16 S0113D D04DbMfl MMPQ3467 SOIC-16 TN3467A

    PN3640

    Abstract: 2N5771 PN4258 ST5771-1 TN3467A
    Text: This PNP Transistors T Material Ln □ b-1 t- 1 UJ □ Copyrighted □ a -c □ -C tr & Semiconductor" V Device No. Case Style 2N5771 By ru PN3640 Its PN4258 Respective io ro ST5771-1 CBO V CEO V EBO (V Min (V) Min (V) Min TO-92 (92) 15 15 4.5 TO-92 (92)


    OCR Scan     		PDF 2N5771 PN3640 PN4258 ST5771-1 TN3467A O-226

    NSDU51

    Abstract: D43C8 NSD6181 0410 2N4234 2N6726 2N6727 92PU51 92PU51A D41D1
    Text: NATL SEMICOND DISCRETE S5E D • bSG113Q 0G377fl7 5 ■ T '21-0t PNP Medium Power Transistors by Ascending Vceo Part No. Vceo \»l Max (mA/V) V « (sat) (V) Max 150 300 10/1 100/1 100/2 100/2 1A/1 500/1 0.5 0.5 0.5 0.5 0.7 0.7 1000 1A 500 500 1000 1000 TO-237


    OCR Scan     		PDF 0G377fl7 T-21-0t 2N6726 O-237 92PU51 D41D1 O-202 D41D2 NSDU51 D43C8 NSD6181 0410 2N4234 2N6727 92PU51A

    ztx450 equivalent

    Abstract: transistor equivalent ZTX651 ztx650 equivalent MPS651 equivalent MPS751 equivalent ztx751 equivalent ZTX749 equivalent transistor ztx MPSW92 equivalent ZTX Zetex
    Text: Z E T E X S U P ER E LIN E CROSS R EFER EN C E LIST This Cross-Reference List is intended as a guide to the selection of a direct or near equivalent device from the Zetex Super E-Line Range. Individual device specifications should be checked in detail before


    OCR Scan     		PDF 2N6714 2N6715 2N6716 2N6717 2N6718 2N6719 2N6720 2N6721 2N6722 2N6723 ztx450 equivalent transistor equivalent ZTX651 ztx650 equivalent MPS651 equivalent MPS751 equivalent ztx751 equivalent ZTX749 equivalent transistor ztx MPSW92 equivalent ZTX Zetex

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    D43C8

    Abstract: nsd6181 NSDU51
    Text: NATL SEflICOND DISCRETE E2E D • bS D113Q 0037767 5 ■ T-27-0/ PNP Medium Power Transistors by Ascending Vce0 Part No. Max (m A /V) Vce (sat) (V) Max 150 300 10/1 100/1 100/2 100/2 1A/1 500/1 0.5 0.5 0.5 0.5 0.7 0.7 1000 1A 500 500 1000 1000 TO-237 TO-237


    OCR Scan     		PDF D113Q T-27-0/ 2N6726 92PU51 D41D1 D41D2 NSDU51 TN5023 2N4234 2N6727 D43C8 nsd6181