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    TO 220 PACKAGE HIGH CURRENT N CHANNEL MOSFET Search Results

    TO 220 PACKAGE HIGH CURRENT N CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    TO 220 PACKAGE HIGH CURRENT N CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CDM22010-650

    Abstract: PB CDM22010-650 CDM_Series
    Text: Product Brief CDM22010-650 TO-220 650V, 10A N-Channel Power MOSFET in the TO-220 package Typical Electrical Characteristics Central Semiconductor’s CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction PFC ,


    Original     		CDM22010-650 O-220 O-220 CDM22010-650 CDM10-650 PB CDM22010-650 CDM_Series PDF

    mgb20n40cl

    Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


    Original     		smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V PDF

    mgb20n40cl

    Abstract: 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


    Original     		smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD PDF

    br 123 s

    Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
    Text: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital


    Original     		O-252 O-277A O-277B MA/DO-214AC DO-214A MC/DO-214AB br 123 s BAS54A BR3005 MS15N50 sod-23 BAS54C PDF

    MTP50N05E

    Abstract: transistor MTP50N05E MTP50N05 MTP75N05HD equivalent MTP50N06E low voltage power transistor HDTMOS MTP50N05E equivalent MTP75N05HD RFG70N06
    Text: EB201/D High Cell Density MOSFETs Low On–Resistance Affords New Design Options Prepared by: Kim Gauen and Wayne Chavez ON Semiconductor http://onsemi.com ENGINEERING BULLETIN Just a few years ago an affordable 60 V, 10 mΩ power transistor was a dream. After all, 10 mΩ is the resistance of


    Original     		EB201/D r14525 MTP50N05E transistor MTP50N05E MTP50N05 MTP75N05HD equivalent MTP50N06E low voltage power transistor HDTMOS MTP50N05E equivalent MTP75N05HD RFG70N06 PDF

    pj 89 diode

    Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
    Text: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct


    OCR Scan     		OT-23 TN2101K1 TN2106K1 TN2124K1 TP2106K1 VN2110K1 VP2110K1 -10ack HV9111 HV9112 pj 89 diode HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode PDF

    2N2222A bjt

    Abstract: 74 standard TTL bjt 2n2222a ttl logic gates IRHLUB7970Z4 TTL logic gate Drive Base BJT IRHLUB770Z4 mosfet p channel irf LM139 APPLICATION
    Text: Application Note AN-1067 Design Considerations When Using RadiationHardened Small Signal Logic Level MOSFETs Table of Contents Page Introduction . 1 Acronyms. 1


    Original     		AN-1067 AN-937. AN-944. AN-936. 2N2222A bjt 74 standard TTL bjt 2n2222a ttl logic gates IRHLUB7970Z4 TTL logic gate Drive Base BJT IRHLUB770Z4 mosfet p channel irf LM139 APPLICATION PDF

    f6656

    Abstract: F6653 S6709 f6654 s6708 F6624 STRS6401 f6626 f6628
    Text: OFF-LINE SWITCHING REGULATORS - WITH POWER MOSFET OUTPUT r These devices are specifically designed to meet the requirements for increased integration and reliability in off-line flyback STR-S6401 and forward (STR-S6401F) converters operating in a fixed-frequency


    OCR Scan     		STR-S6401 STR-S6401F STR-S6401) STR-S6401F) STR-S6401F 220/240V 110/120V 2-40V f6656 F6653 S6709 f6654 s6708 F6624 STRS6401 f6626 f6628 PDF

    F6653

    Abstract: f6654 f6656 S6709 F6628 F6676 S5708 s6707 8120S GK-005
    Text: Data Sheet 28101.1 STR-S6411 AND STR-S6411F OFF-LINE SWITCHING REGULATORS - WITH POWER MOSFET OUTPUT r pw m j T~ SOFT , START ’ , OVER-CURRENT PROTECTION ' UVLO - — REF. - 1 SIGNAL / GROUND ' FDBK \ These devices are specifically designed to meet the requirements


    OCR Scan     		STR-S6411 STR-S6411F STR-S6411) STR-S6411F) STR-S6411F 110/120V 2-40V F6653 f6654 f6656 S6709 F6628 F6676 S5708 s6707 8120S GK-005 PDF

    str 5707

    Abstract: str 6707 str f 6709 datasheet str 5707 datasheet str 6707 transistor GK sot-89 str 6707 diagram guide str 6708 IRFPE40 equivalent IRFPE40 circuit diagram
    Text: STR-S6411 and STR-S6411F STR-S6411 AND STR-S6411F Data Sheet 28101.1 OFF-LINE SWITCHING REGULATORS OFF-LINE SWITCHING REGULATORS – WITH POWER MOSFET OUTPUT DRAIN 1 SOURCE 2 GATE 3 POWER GROUND 4 SOFT START 5 OVER-CURRENT PROTECTION 6 These devices are specifically designed to meet the requirements


    Original     		STR-S6411 STR-S6411F STR-S6411) STR-S6411F) str 5707 str 6707 str f 6709 datasheet str 5707 datasheet str 6707 transistor GK sot-89 str 6707 diagram guide str 6708 IRFPE40 equivalent IRFPE40 circuit diagram PDF

    PD168804

    Abstract: 2SK2414Z 48-PIN 900 v 9 amp mosfet TO-3
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD168804 4 CH BUCK OR BOOST SELECTABLE CONSTANT CURRENT DRIVER IC WITH EXTERNAL POWER MOSFETS DESCRIPTION μ PD168804 is a 4 channel constant current driver IC. One from “Buck” or “Boost” topology is selectable by the


    Original     		PD168804 PD168804 2SK2414Z 48-PIN 900 v 9 amp mosfet TO-3 PDF

    f6654

    Abstract: 8120S str flyback mosfet F6656 F6626 F6653 pin details of str f6654 quasi resonant str f6653 STR-S6411
    Text: OFF-LINE SWITCHING REGULATORS – WITH POWER MOSFET OUTPUT DRAIN 1 SOURCE 2 GATE 3 POWER GROUND 4 SOFT START 5 OVER-CURRENT PROTECTION 6 These devices are specifically designed to meet the requirements for increased integration and reliability in off-line flyback STR-S6411


    Original     		STR-S6411) STR-S6411F) STR-S6411 STR-S6411F 8050S 8090S 2-40V 8120S 8150S f6654 8120S str flyback mosfet F6656 F6626 F6653 pin details of str f6654 quasi resonant str f6653 PDF

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode PDF

    str 5707

    Abstract: str f 6709 str 6709 datasheet str 5707 str 6708 str 6707 STRS6401 gk 009 str 6707 diagram guide datasheet str 6707
    Text: STR-S6401 and STR-S6401F STR-S6401 AND STR-S6401F Data Sheet 28101 OFF-LINE SWITCHING REGULATORS OFF-LINE SWITCHING REGULATORS – WITH POWER MOSFET OUTPUT DRAIN 1 SOURCE 2 GATE 3 POWER GROUND 4 SOFT START 5 OVER-CURRENT PROTECTION 6 These devices are specifically designed to meet the requirements


    Original     		STR-S6401 STR-S6401F STR-S6401) STR-S6401F) STR-S6401F str 5707 str f 6709 str 6709 datasheet str 5707 str 6708 str 6707 STRS6401 gk 009 str 6707 diagram guide datasheet str 6707 PDF

    Untitled

    Abstract: No abstract text available
    Text: STN18T20 N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION STN18T20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		STN18T20 STN18T20 O-252 00V/12A, O-252 PDF

    gk 009

    Abstract: f6654 STR F6654 EK003 EK-003 GK-006 F6653 GK-009 pin details of str f6654 s640
    Text: OFF-LINE SWITCHING REGULATORS – WITH POWER MOSFET OUTPUT DRAIN 1 SOURCE 2 GATE 3 POWER GROUND 4 SOFT START 5 OVER-CURRENT PROTECTION 6 These devices are specifically designed to meet the requirements for increased integration and reliability in off-line flyback STR-S6401


    Original     		STR-S6401) STR-S6401F) STR-S6401 STR-S6401F 8050S 8090S 2-40V 8120S 8150S gk 009 f6654 STR F6654 EK003 EK-003 GK-006 F6653 GK-009 pin details of str f6654 s640 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P9220H Rev. 0, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		MRFE6P9220H MRFE6P9220HR3 PDF

    dc-ac converter royer

    Abstract: 12v schematic of fluorescent lamps schematic diagram modified sine wave dc-ac inverter Royer resonant an1722 ccfl Royer converter tsm108 transformer winding formula 220v Ac to 12v Dc royer dc-ac converter royer 220v
    Text: AN1722 APPLICATION NOTE Design and Realization of a CCFL Application Using TSM108, STN790A, or STS3DPFS30, and STSA1805 1. ABSTRACT This technical document shows how to use the integrated circuit TSM108, the PNP power bipolar transistor STN790A, or the P channel power MOSFET STS3DPFS30, the NPN power bipolar transistor


    Original     		AN1722 TSM108, STN790A, STS3DPFS30, STSA1805 STSA1805 1N5821 dc-ac converter royer 12v schematic of fluorescent lamps schematic diagram modified sine wave dc-ac inverter Royer resonant an1722 ccfl Royer converter tsm108 transformer winding formula 220v Ac to 12v Dc royer dc-ac converter royer 220v PDF

    AIC1527

    Abstract: N Channel d- MOSFET AIC1527-XCXXX
    Text: AIC1527 Quad USB High-Side Power Switch n FEATURES • 110mΩ 5V Input High-Side MOSFET Switch. l 500mA Continuous Load Current per Channel. l 220µA Typical On-State Supply Current. l 1µA Typical Off-State Supply Current. l Current-Limit / Short Circuit Protection.


    Original     		AIC1527 500mA AIC1527 N Channel d- MOSFET AIC1527-XCXXX PDF

    NTE7232

    Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
    Text: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case


    Original     		NTE573â 201ADÂ com/specs/500to599/pdf/nte573â NTE639 214AAÂ NTE7232 NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A PDF

    MTP12P10G

    Abstract: p-channel to-220 MTP12 MTP12P10
    Text: MTP12P10 Preferred Device Power MOSFET 12 Amps, 100 Volts P−Channel TO−220 This Power MOSFET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. 12 AMPERES, 100 VOLTS


    Original     		MTP12P10 O-220 MTP12P10/D MTP12P10G p-channel to-220 MTP12 MTP12P10 PDF

    j949

    Abstract: 465B MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
    Text: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110


    Original     		MRF5S21130/D MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S j949 465B MRF5S21130SR3 PDF

    AIC1527

    Abstract: AIC1527-0CN AIC1527-0CS AIC1527-1CN AIC1527-1CS N Channel d- MOSFET
    Text: AIC1527 Quad USB High-Side Power Switch n FEATURES • 110mΩ 5V Input High-Side MOSFET Switch. l 500mA Continuous Load Current per Channel. l 220µA Typical On-State Supply Current. l 1µA Typical Off-State Supply Current. l Current-Limit / Short Circuit Protection.


    Original     		AIC1527 500mA AIC1527 DS-1527-00 AIC1527-0CN AIC1527-0CS AIC1527-1CN AIC1527-1CS N Channel d- MOSFET PDF

    TAS5142

    Abstract: AES17 TAS5086 TAS5142DDV TAS5142DKD TAS5508 TAS5518
    Text: TAS5142 www.ti.com SLES126A − FEBRUARY 2005 − REVISED MARCH 2005 TM STEREO DIGITAL AMPLIFIER POWER STAGE − DKD 36-Pin PSOP3 − DDV (44-Pin HTSSOP) D High-Efficiency Power Stage (>90%) With 140-mW Output MOSFETs D Power-On Reset for Protection on Power Up


    Original     		TAS5142 SLES126A 36-Pin 44-Pin 140-mW TAS5142 AES17 TAS5086 TAS5142DDV TAS5142DKD TAS5508 TAS5518 PDF