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    TO 220-AB STYLE 4 Search Results

    TO 220-AB STYLE 4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADC1038CIWM Rochester Electronics LLC ADC1038 - ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20 Visit Rochester Electronics LLC Buy
    TL505CN Rochester Electronics LLC TL505 - Analog to Digital Converter Visit Rochester Electronics LLC Buy
    ML2258CIQ Rochester Electronics LLC ML2258 - ADC, Successive Approximation, 8-Bit, 1 Func, 8 Channel, Parallel, 8 Bits Access, PQCC28 Visit Rochester Electronics LLC Buy
    CA3310AM Rochester Electronics LLC CA3310A - ADC, Successive Approximation, 10-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, PDSO24 Visit Rochester Electronics LLC Buy
    CA3310M Rochester Electronics LLC CA3310 - ADC, Successive Approximation, 10-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, PDSO24 Visit Rochester Electronics LLC Buy

    TO 220-AB STYLE 4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1200 va ups circuit diagram

    Abstract: 30-06BR DSEC16-06A dse*60-06A y 803A DSEP 15-06A dsep 12-12a dsep 2x91-03a 30-04A 6006B
    Text: HiPer Fast Recovery Epitaxial Diodes Reg. Nr. 2743-02 HiPerFREDTM Contents Package style Type Voltage Current 1 TO-220 AC 2 TO-247 AD 2a ISOPLUS 247 TM 3 TO-268 AA 4 TO-220 AB 5 TO-247 AD 5a ISOPLUS 247 TM 6 SOT-227 B, miniBLOC Circuit Diagram Page VRRM IFAV


    Original     		5-03A 9-03A 0-03A 0-04A 5-06A 9-06A/B 0-06A/B/BR 0-06A/AT 2-12A 1200 va ups circuit diagram 30-06BR DSEC16-06A dse*60-06A y 803A DSEP 15-06A dsep 12-12a dsep 2x91-03a 30-04A 6006B PDF

    2n6151

    Abstract: 2N6347A 2N6347 2N6070 MAC220-7 2N6071 2N6073 ab MAC10-6 MAC10-2 TO 220-AB STYLE 4
    Text: TRIACs in Plastic Packages ON-STATE RMS C U R R E N T 25 30 0.45 A m p 4 .0 A m p 8.0 A m p 10 A m p Case 29-02 TO-92 Style 12 Case 77-03 Style 5 Case 221-02 TO -220 AB S tyle 2 Case 90-05 S tyle 4 Case 221-02 T 0 -2 2 0 AB Style 2 M AC 10-1 2N6068 MAC92-1I


    OCR Scan     		O-220 2N6068 MAC92-1I MAC92A-1 2N6069 MAC220-2 MAC221-2 MAC10-2 MAC220A-2 2n6151 2N6347A 2N6347 2N6070 MAC220-7 2N6071 2N6073 ab MAC10-6 TO 220-AB STYLE 4 PDF

    Untitled

    Abstract: No abstract text available
    Text: MRF448 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF448 is Designed for High Linearity Class AB HF Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 14 dB Typical at 220 W/30 MHz • IMD3 = -32 dBc Typ. at 220 W PEP


    Original     		MRF448 MRF448 112x45° ASI10866 PDF

    ASI10614

    Abstract: HF220-50 1257h
    Text: HF220-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF220-50 is Designed for High Linearity Class AB HF Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 14 dB Typical at 220 W/30 MHz • IMD3 = -32 dBc Typ. at 220 W PEP


    Original     		HF220-50 HF220-50 112x45° ASI10614 ASI10614 1257h PDF

    MRF448

    Abstract: No abstract text available
    Text: MRF448 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF448 is Designed for High Linearity Class AB HF Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A C E FULL R • PG = 14 dB Typical at 220 W/30 MHz • IMD3 = -32 dBc Typ. at 220 W PEP


    Original     		MRF448 MRF448 112x45° ASI10866 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information GaAs - Diodes Voltage Current VRRM IDC Package style 1 TO-220 AC 2 TO-220 AB 1999 IXYS All rights reserved Type Version Contents VF Circuit Diagram Page V A V 1 1 150/180 150/180 10 20 1.1 0.9 DGS 10 DGS 20 A A D7 - 2 D7 - 3


    Original     		O-220 0-015A 0-018A PDF

    10015A

    Abstract: TO 220-AB STYLE 4 common anode schottky to220 common anode diode to-220 Vrrm
    Text: GaAs - Diodes Voltage Current VRRM IDC Package style 1 TO-220 AC 2 TO-220 AB 2000 IXYS All rights reserved Type Version Contents VF Circuit Diagram Page V A V 1 1 150/180 150/180 10 20 1.1 0.9 DGS 10 DGS 20 A A D1 - 2 D1 - 3 2 2 150/180 150/180 2x 10 2x 20


    Original     		O-220 0-015A 0-018A 10015A TO 220-AB STYLE 4 common anode schottky to220 common anode diode to-220 Vrrm PDF

    diode DSDI 9

    Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
    Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B


    OCR Scan     		O-247 O-220 O-264 IXGH24N50B IXGH24N50BU1 IXGH50N50B 10N60A IXGH24N60B IXGH24N60BU1 IXGH50N60B diode DSDI 9 IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A PDF

    BLW96

    Abstract: blw96 equivalent amplifier blw96 2464g BLW96 HF power amplifier
    Text: BLW96 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW96 is Designed for High Linearity Class A, AB HF Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 14 dB Typical at 200 W/28 MHz • IMD3 = -32 dBc Typ. at 220 W PEP


    Original     		BLW96 BLW96 112x45° blw96 equivalent amplifier blw96 2464g BLW96 HF power amplifier PDF

    pbt-gf20 relay

    Abstract: PA-GF20 BI50-Q80-ADZ30X2-B1131 Ni10-Q25-AN6X M160160 2-Q12-AN6X Lucas Ni15-Q30-AP6X Ni25-Q20-AP6X2-H1141 4-Q12-AP6X
    Text: Selection Guide Housing Styles Pages Q5.5 Style 2-Wire DC 3-Wire DC 7-8 9 - 10 Q06 Style 3-Wire DC 11 - 12 Housing Styles Pages Q11S Style 2-Wire DC 3-Wire DC 2-Wire NAMUR 7-8 23 - 24 45 - 46 25 - 26 37 - 38 Q6.5 and Q9.5 Styles 3-Wire DC 13 - 14 Q12 Style


    Original     		B9005 1-800-544-PROX B0143 pbt-gf20 relay PA-GF20 BI50-Q80-ADZ30X2-B1131 Ni10-Q25-AN6X M160160 2-Q12-AN6X Lucas Ni15-Q30-AP6X Ni25-Q20-AP6X2-H1141 4-Q12-AP6X PDF

    102AB

    Abstract: No abstract text available
    Text: CHIP FUSES; RECTANGULAR TYPE KAMAYA OHM FCC,FHC •Features 1. Fast-Acting Type 2. Suitable for over-current protection of the circuit of miniature portable equipment. 3. 4 sizes available : from 0402 to 1206. 4. No smoke, no flame, at the fusing conditions.


    Original     		900ppm, 1500ppm 900ppm E176847 102AB PDF

    Untitled

    Abstract: No abstract text available
    Text: CHIP FUSES; RECTANGULAR TYPE KAMAYA OHM FCC,FHC •Features 1. Fast-Acting Type 2. Suitable for over-current protection of the circuit of miniature portable equipment. 3. 4 sizes available : from 0402 to 1206. 4. No smoke, no flame, at the fusing conditions.


    Original     		900ppm, 900ppm 1500ppm E176847 FCC10 FHC10 FCC16 FHC16 FCC20 FHC20 PDF

    FCC10

    Abstract: No abstract text available
    Text: CHIP FUSES; RECTANGULAR TYPE KAMAYA OHM FCC,FHC •Features 1. Fast-Acting Type 2. Suitable for over-current protection of the circuit of miniature portable equipment. 3. 4 sizes available : from 0402 to 1206. 4. No smoke, no flame, at the fusing conditions.


    Original     		900ppm, 900ppm 1500ppm E176847 FCC10 FHC10 FCC16 FHC16 FCC20 FHC20 PDF

    Kamaya FCC16

    Abstract: No abstract text available
    Text: CHIP FUSES; RECTANGULAR TYPE KAMAYA OHM FCC FHC •Features 1. Fast-Acting Type 2. Suitable for over-current protection of the circuit of miniture portable equipment. 3. 4 sizes available : from 0402 to 1206. 4. No smoke, no flame, at the fusing conditions.


    Original     		E176847 FCC10 FHC10 FCC16 FHC16 FCC20 FHC20 FCC32 FHC32 Kamaya FCC16 PDF

    MMBF4860

    Abstract: MMBC1654N5 MMBC1653N4 MMBC1653N3 MMBC1623L6 MMBC1653N2 MMBF4416 MMBC1623L4 MMBC1623L7 MMBC1653
    Text: MOTOROLA SC -CXSTRS/R F> 8367254 MOTOROLA SC » F | t , 3 b 72S 4 DDflinO E | CXSTRS/R F M A X IM U M RATINGS 9 6D 81990 f Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage Vebo 5.0 Vdc ic 100


    OCR Scan     		3b72S4 MMBC1623L3 MMBC1623L4 MMBC1623L5 MMBC1623L6 MMBC1623L7 30cle b3b72SM MMBF4860 T-35-25 MMBF4860 MMBC1654N5 MMBC1653N4 MMBC1653N3 MMBC1623L6 MMBC1653N2 MMBF4416 MMBC1623L4 MMBC1623L7 MMBC1653 PDF

    FHC32 502 AD

    Abstract: FHC10 FHC32 FHC16 270 OHM FB FCC16 FCC20 FCC32 FCC10 yd201
    Text: CHIP FUSES; RECTANGULAR TYPE KAMAYA OHM FCC FHC ¥Features 1. Fast-Acting Type 2. Suitable for over-current protection of the circuit of miniture portable equipment. 3. 4 sizes available : from 0402 to 1206. 4. No smoke, no flame, at the fusing conditions.


    Original     		E176847 FCC20 FHC20 FHC32 502 AD FHC10 FHC32 FHC16 270 OHM FB FCC16 FCC32 FCC10 yd201 PDF

    fusible Am

    Abstract: oma0207
    Text: EIN UNTERNEHMEN VON METAL FILM Fusible type NMA.SÎ D R i^ p R IC " F e a tu re s 9 fusible function at constant current load Ri> 6 i2 for R n < 10 H; Ri > 1 Q for RN > 10 Q 4fcU» • high positive T.C. • defined cut-off behaviour • current limit Style


    OCR Scan     		NMA0207SÌ NMA0309SÌ NMA0411Si LCS0207 LCE0207 fusible Am oma0207 PDF

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
    Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station


    Original     		SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor PDF

    313 Motorola

    Abstract: 25CC 2N5086 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C
    Text: MOTOROLA SC -CXSTRS/R F> 6 3 6 7 2 54 MOTOROLA SC Tb XSTRS/R M A X IM U M RATINGS D eT| b3L.72S4 ODÖITM? 1 F 96D 8 1 9 4 7 ^ D _ * Symbol Value Unit Coilector-Emitter Voltage VCEO 32 V Collector-Base Voltage V cB O 32 V Ve b o 5.0 V ic 100 mAdc Symbol Max


    OCR Scan     		62Adc, BCW61A, BCW61B, BCW61C, BCW61D b3b72SM 313 Motorola 25CC 2N5086 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C PDF

    MMM6029

    Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
    Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular


    Original     		SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications PDF

    marking 68g

    Abstract: 25CC BCW65A BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G
    Text: r 6 3 6 7 2 5 4 MOTOROLA SC DE I t,3b75S 4 D D f l n S l Tb M O T O R O L A SC Î X S T R S / R F> 96D 8 1 9 5 1 , _ CXSTRS/.R F Rating Sym bol Value VcEO VCBO V eb o 'c 32 60 5.0 800 mAdc Sym bol Max U nit Pd 225 mW 1.8 mW/°C R»j a 556 °C/mW pd 300 mW


    OCR Scan     		b3b75S4 BCX17 BCX18 marking 68g 25CC BCW65A BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G PDF

    TIP31AG

    Abstract: TIP31CG TIP32CG TIP31BG TIP31 AYWW marking code IC TIP32A TIP32B TIP31A TIP31C
    Text: TIP31, TIP31A, TIP31B, TIP31C, NPN , TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40−60−80−100 VOLTS,


    Original     		TIP31, TIP31A, TIP31B, TIP31C, TIP32, TIP32A, TIP32B, TIP32C, TIP32 TIP31AG TIP31CG TIP32CG TIP31BG TIP31 AYWW marking code IC TIP32A TIP32B TIP31A TIP31C PDF

    "class AB Linear"

    Abstract: hf class AB power amplifier mosfet HF100-12 HF TRANSISTORS linear mosfet HF20-12F
    Text: RF Power Transistors HFSSB ASI HF transistors are characterized for broadband amplifier operation, 2-30MHz devices provide high linear power output for a variety of military, commercial and amateur communication equipment. 12.5 Volt, Class AB Linear BIAS P out


    OCR Scan     		2-30MHz HF5-12F HF5-12S HF10-12F HF10-12S HF20-12F HF20-12S HF50-12F HF50-12S HFT150-28 "class AB Linear" hf class AB power amplifier mosfet HF100-12 HF TRANSISTORS linear mosfet PDF

    aerovox capacitor 400V

    Abstract: din 41238 BHC ALS20 capacitor BHC Aerovox BHC Aerovox ALS20 DIN 41496 ALT21 bhc 2200 uF 400V 10000 uf 100V electrolytic capacitor bhc capacitor
    Text: 44 ALP/T20 SERIES Board Mounting or Solder Tag Terminations This range of Long Life grade capacitors, Capacitance range . 22µF to 68,000µF complements the larger ALS20/21 screw terminal Capacitance tolerance . -10% +30%, ±20% 200V only


    Original     		ALP/T20 ALS20/21 105mm ALT21 aerovox capacitor 400V din 41238 BHC ALS20 capacitor BHC Aerovox BHC Aerovox ALS20 DIN 41496 ALT21 bhc 2200 uF 400V 10000 uf 100V electrolytic capacitor bhc capacitor PDF