TVV020
Abstract: transistor B A O 331 d 331 transistor 1080 ASI10659 406G
Text: TVV020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV020 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD 45° FEATURES: A D • Common Emitter • PG = 8.0 dB at 20 W/225 MHz • Omnigold Metalization System
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TVV020
TVV020
ASI10659
transistor B A O 331
d 331 transistor 1080
ASI10659
406G
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TVV100
Abstract: ASI10662
Text: TVV100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV100 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .400 8L FLG C D FEATURES: A B F U LL R • Common Emitter • PG = 11 dB at 100 W/225 MHz • Omnigold Metalization System
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TVV100
TVV100
ASI10662
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TVV007
Abstract: ASI10655
Text: TVV007 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV007 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C 2x ØN FU LL R D FEATURES: • Common Emitter • 5:1 VWR capability • PG = 10 dB at 7.5 W/225 MHz
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TVV007
TVV007
ASI10655
ASI10655
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ASI10657
Abstract: TVV014
Text: TVV014 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV014 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C 2x ØN FU LL R FEATURES: D • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold Metalization System
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TVV014
TVV014
ASI10657
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TVV030A
Abstract: IC 555 ASI10661
Text: TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030A is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD A .112 x 45° FEATURES: A Ø .630 NOM C • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System
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TVV030A
TVV030A
IC 555
ASI10661
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AD8632
Abstract: AD8632AR AD8631 AD8631ART electret mic
Text: a FEATURES Single Supply Operation: 1.8 V to 6 V Space-Saving SOT-23, SOIC Packaging Wide Bandwidth: 5 MHz @ 5 V, 4 MHz @ 1.8 V Low Offset Voltage: 4 mV Max, 0.8 mV typ Rail-to-Rail Input and Output Swing 2 V/s Slew Rate @ 1.8 V Only 225 A Supply Current @ 1.8 V
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OT-23,
AD8631/AD8632
OT-23
AD8632
AD8632AR
AD8631
AD8631ART
electret mic
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FS225R17KE3
Abstract: 2750A
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FS 225 R17 KE3 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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FS225R17KE3
2750A
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FS225R12KE3
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-Modules FS225R12KE3 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage
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FS225R12KE3
FS225R12KE3
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arco TRIMMER capacitor
Abstract: Arco 403 arco 404 CPM13B arco TRIMMER capacitor 425 capacitor 100uF 63V arco Thomson capacitors lcc M164 SD1459
Text: SD1459 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . 170 - 230 MHz 28 VOLTS COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS POUT = 20 W MIN. WITH 7.5 dB GAIN .500 Dia .550 4L STUD M164 epoxy sealed
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SD1459
SD1459
arco TRIMMER capacitor
Arco 403
arco 404
CPM13B
arco TRIMMER capacitor 425
capacitor 100uF 63V
arco
Thomson capacitors lcc
M164
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sd1458
Abstract: M111 sgs-thomson RF TRANSISTORS
Text: SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS . . . . . 170 - 230 MHz 28 VOLTS IMD −55 dB COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING HIGH SATURATED POWER CAPABILITY DESIGNED FOR HIGH POWER LINEAR OPERATION POUT = 14 W MIN. WITH 14.0 dB GAIN
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SD1458
SD1458
M111
sgs-thomson RF TRANSISTORS
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SD1455
Abstract: M130
Text: SD1455 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 170 - 230 MHz 25 VOLTS IMD − 55dB COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR OPERATION POUT = 20 W MIN. WITH 8.0 dB GAIN
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SD1455
SD1455
M130
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2N6212
Abstract: 2N6213
Text: TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 461 Devices Qualified Level 2N6211 2N6212 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
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MIL-PRF-19500/
2N6211
2N6212
2N6213
2N6211
2N6212
2N6213
O-213AA)
125Adc
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2N6211
Abstract: 2N6212 2n6212 data all ic datasheet 2N6213
Text: TECHNICAL DATA 2N6211 JAN, JTX, JTXV 2N6212 JAN, JTX, JTXV 2N6213 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/461 PNP HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
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2N6211
2N6212
2N6213
MIL-PRF-19500/461
2N6211
2N6212
2N6213
O-213AA)
125Adc
2n6212 data
all ic datasheet
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1GM sot-23 transistor
Abstract: 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1
Text: MOTOROLA Order this document by MMBTA05LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTA05LT1 MMBTA06LT1* Driver Transistors NPN Silicon COLLECTOR 3 *Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol MMBTA05 MMBTA06 Unit Collector – Emitter Voltage
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MMBTA05LT1/D
MMBTA05LT1
MMBTA06LT1*
MMBTA05
MMBTA06
236AB)
MMBTA05LT1/D*
1GM sot-23 transistor
1GM sot-23
MMBTA05
MMBTA05LT1
MMBTA06
MMBTA06LT1
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transistor marking 3em
Abstract: MMBTH10LT1
Text: MOTOROLA Order this document by MMBTH10LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit
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MMBTH10LT1/D
MMBTH10LT1
OT-23
O-236AB)
DiodesMMBTH10LT1/D
transistor marking 3em
MMBTH10LT1
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2N3643
Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3643
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B0139
Abstract: b0135 bd140 cross reference TRANSISTOR B0135 NPN TRANSISTOR NPN B0135 BD232 motorola power transistor to-126 BD167 NPN/B0139-16 BD169
Text: MOTOROLA SC XSTRS/R F 4fc>E D • b3b?254 OQT B H D ' l 0 «MOTb T ~ $2> ~ 0 3 TABLE 8 - PLASTIC TO-225 Type (Formerly TO-126 Type) STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE yggw STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 77-07 (TO-225AA) Resistive Switching
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O-225
O-126
O-225AA)
MJE3439
MJE341
MJE344
2N5655
BD157
BD158
BD232
B0139
b0135
bd140 cross reference
TRANSISTOR B0135 NPN
TRANSISTOR NPN B0135
motorola power transistor to-126
BD167
NPN/B0139-16
BD169
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Untitled
Abstract: No abstract text available
Text: 10134-F FEATURES LOGIC DIAGRAM F PACKAGE •High speed combined multiplexer — latch improves system performance. * Multiplexed inputs to reduce package count •Fast propagation delay = 2.5ns TYP data = 3.5ns TYP (select) = 4.0ns TYP (clock) * Low power dissipation - 225 mW/package TYP (no load)
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10134-F
50-ohm
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BC859AL
Abstract: BC860CL BCB60 BC860BL BC559 BC859 BC859BL BC859CL BC860 BC860AL
Text: ÌZ E I M A X IM U M RATINGS Symbol Rating BC859 U nit V Collector-Emitter Voltage VCEO 45 30 VCBO 50 30 V Emitter-Base Voltage Ve b o 6.0 5.0 V ic 100 100 mAdc Characteristic Symbol Max PD 225 mW 1.8 mW/°C Thermal Resistance Junction to Ambient Roja 417
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BC860
BC859
BC859AL
BC859BL
BC859CL
BC860AL
BC860BL
BC860CL
860CL
BC859AL
BC860CL
BCB60
BC860BL
BC559
BC859BL
BC859CL
BC860AL
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TO111 package
Abstract: TO61 package TO63 package MOSFET F24 S06 rectifier
Text: PACKAGE OUTLINE DRAWINGS TO-18 PACKAGE TO-5 PACKAGE —seâtaao h i m TO-33 PACKAGE 0Ct9 t?s 1 tf— II i-t 4'fiC> ?y H TO-72 PACKAGE TO-3 PACKAGE MODIFIED TO-3 PACKAGE 60mil pins SE* Ft t -L SEATU 'i "01I6 02' °’6 .225 205 JO -66 PACKAGE F-24 PACKAGE
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60mil
O-111
LCC-28
nms-11
TO111 package
TO61 package
TO63 package
MOSFET F24
S06 rectifier
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Untitled
Abstract: No abstract text available
Text: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAG E O U TLIN E DETAILS ALL D IM EN SIO N S IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR
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BCW65A,
BCW65B
BCW65C
BCW65A
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Untitled
Abstract: No abstract text available
Text: CDU CMBT8598 CMBT8599 GENERAL PURPOSE TRANSISTOR P -N -P transistor M arking CMBT8598 = 2K CMBT8599 = 2W PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m J3.0 2 . 8" 0.46 0.38 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 u _1.02 0.8sT 2.00
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CMBT8598
CMBT8599
100mA
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Untitled
Abstract: No abstract text available
Text: CMBT918 VHF/UHF TRANSISTOR N -P -N transistor Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CMBT918 = 3B _3 .0_ 2.8 0.48 0.38 3 Pin configuration 26 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.02_ "0.89 0.60 0.40 2.00 1.80 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter
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CMBT918
23A33TM
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Untitled
Abstract: No abstract text available
Text: COIL CMBT918 VHF/UHF TRANSISTOR N-P-N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 I 0.38 1 1 3 1 I I1 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 « COLLECTOR _1.02 0.89" 2.00 0.60 57«f 1.80 ABSOLUTE MAXIMUM RATINGS
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CMBT918
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