TO 63 5 AMP NPN Search Results

TO 63 5 AMP NPN Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TO 63 5 AMP NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor array high frequency Abstract: hfa11001 transistor 2620 SOT-23 EL5308 CA3083 receiver EL5611 EL8188 EL8203 Text: Amplifiers/Buffers 2 A NALOG S IGNAL P ROCESSING Low Power pg. 2-27 Transistor Arrays (pg. 2-41) Bandwidth >1GHz (pg. 2-2) VOS <25µV (pg. 2-15) IS <10µA (pg. 2-27) UHF NPN Only (pg. 2-41) Bandwidth >500MHz (pg. 2-2) VOS <100µV (pg. 2-15) IS <100µA	Original	500MHz 100MHz 10MHz HA-4900 HA-4902 HA-4905 150nA, 200nA, 180ns transistor array high frequency hfa11001 transistor 2620 SOT-23 EL5308 CA3083 receiver EL5611 EL8188 EL8203	PDF
100 amp power transistor Abstract: NPN transistor Ic 50A 2N5926 NPN 20 Amps POWER TRANSISTOR to63 NPN 1.5 AMPS POWER TRANSISTOR NPN 200 VOLTS 20 Amps POWER TRANSISTOR to 63 case 5 amp npn transistor NPN 25 Amps POWER TRANSISTOR to63 Text: SFT5926/63 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 150V, 100 AMP POWER TRANSISTOR SILICON NPN Part Number / Ordering Information 1/	Original	SFT5926/63 SFT5926 2N5926 TR0115A 100 amp power transistor NPN transistor Ic 50A 2N5926 NPN 20 Amps POWER TRANSISTOR to63 NPN 1.5 AMPS POWER TRANSISTOR NPN 200 VOLTS 20 Amps POWER TRANSISTOR to 63 case 5 amp npn transistor NPN 25 Amps POWER TRANSISTOR to63	PDF
2N5190 Abstract: No abstract text available Text: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. • ESD Ratings: Machine Model, C; > 400 V • • http://onsemi.com Human Body Model, 3B; > 8000 V	Original	2N5190, 2N5191, 2N5192 2N5194, 2N5195. 2N5190 2N5191	PDF
2N5686 motorola Abstract: 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 2N5685 MJ1000 NSP2100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686* . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability — IC Continuous = 50 Amperes.	Original	2N5684 2N5685 2N5686* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5686 motorola 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 MJ1000 NSP2100	PDF
IR3001 Abstract: pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF15030 PNP MJF15031 Complementary Power Transistors For Isolated Package Applications Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	MJF15030 MJF15031 MJE15030 MJE15031 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 IR3001 pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c	PDF
D72F5T2 NPN Abstract: silicon npn 2SD716 transistor BD4202 bd139 3v BU108 2N5978 NPN pin configuration NPN transistor tip41c 724 motorola NPN Transistor with heat pad MJE15029 audio output TRANSISTOR PNP 2SB686 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE15028* MJE15030* PNP MJE15029* MJE15031* Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hFE = 40 Min @ IC = 3.0 Adc	Original	MJE15028, MJE15029 MJE15030, MJE15031 220AB MJE15028* MJE15030* MJE15029* MJE15031* TIP73B D72F5T2 NPN silicon npn 2SD716 transistor BD4202 bd139 3v BU108 2N5978 NPN pin configuration NPN transistor tip41c 724 motorola NPN Transistor with heat pad audio output TRANSISTOR PNP 2SB686	PDF
BD791 equivalent Abstract: Transistor BC 3199 BU108 2SA1046 MJE34 pnp BD140 pnp transistor BDX54 2N3773 NPN Audio Power AMP Transistor D45V silicon npn 2SD716 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD789 BD791* PNP BD790 BD792* Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage —	Original	BD789, BD790 BD791, BD792 BD789 BD791* BD792* TIP73B TIP74 BD791 equivalent Transistor BC 3199 BU108 2SA1046 MJE34 pnp BD140 pnp transistor BDX54 2N3773 NPN Audio Power AMP Transistor D45V silicon npn 2SD716 transistor	PDF
IR642 Abstract: 2N6410 IR3001 2SD375 2SC931 bu180 BU108 BD411-8 bu500 BD661 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD787 PNP BD788 Complementary Plastic Silicon Power Transistors . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage —	Original	BD787, BD788 BD787 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A IR642 2N6410 IR3001 2SD375 2SC931 bu180 BU108 BD411-8 bu500 BD661	PDF
BD179-10 equivalent Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1	PDF
transistor MJE243 equivalent Abstract: mje15033 replacement MJE243 equivalent 2N3055 plastic MJE243 MOTOROLA BU108 mje243 PNP transistor motorola mj2268 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE243* PNP MJE253* . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage —	Original	MJE243, MJE253 MJE243* MJE253* TIP73B TIP74 TIP74A TIP74B transistor MJE243 equivalent mje15033 replacement MJE243 equivalent 2N3055 plastic MJE243 MOTOROLA BU108 mje243 PNP transistor motorola mj2268 BU326 BU100	PDF
2SA1046 Abstract: TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6547  Data Sheet Designer's Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and	Original	2N6547 CASE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA1046 TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547	PDF
MJE34 equivalent Abstract: BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 60 Vdc (Min) — 2N5879, 2N5881	Original	2N5879, 2N5881 2N5880, 2N5882 2N5879 2N5880* 2N5882* TIP73B TIP74 MJE34 equivalent BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100	PDF
bdx54c equivalent Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc	Original	BDX53B, BDX53C, 220AB BDX53B BDX53C BDX54B BDX54C TIP73B TIP74 TIP74A bdx54c equivalent BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386	PDF
2N5631 equivalent Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —	Original	2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator	PDF

Motorola case 77 Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc	Original	MJE200* MJE210* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola case 77 2N3055 BU108 2sc15 bdw93c applications BU326 BU100	PDF
2N6215 Abstract: SDT8159 2N6258 2N6273 Text: 43 SILICON POWER TRANSISTORS C U R R E N T G A IN V CBO V O U J> CASE TYPE >° TYPE NUMBER V EBO I V M IN . h FE I MAX. S A T U R A T IO N V O L T A G E S @ 31 VCE V A V C E s V B E (sl v i V C A B A 1 30 AMP S IL IC O N NPN 2N 6258 2N 6 2 5 9 2N 6326	OCR Scan		PDF
transistor mje29 Abstract: MJE30 bd139 bd140 MJE29 2N6407 transistor bd135-16 BD234 transistor BD140 BD136-16 BF459 Text: Silicon Power - Plastic This Selector Guide is to help the designer choose the best silicon power transistor for his new equipment. It is a comprehensive listing of the industry's most complete line of PNP and NPN silicon power transistors. Motorola has the production capability and flexib ility to supply devices especially tailored to specific	OCR Scan	BF457 BF458 BF459 BD137-6 BD138-6 BD137-10 BD138-10 BD167 BD168 BD139 transistor mje29 MJE30 bd139 bd140 MJE29 2N6407 transistor bd135-16 BD234 transistor BD140 BD136-16 BF459	PDF
ECG123AP Abstract: ECG159 transistor ECG128 ECG128 ecg123A ECG123 ECG152 ECG127 transistor ECG123 transistor ECG123a Text: Transistors cont'd ECG Type ECG107 Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts b v CBO b v CEO b v Eb o NPN-Si, UHF/VHF Amp, Osc, Vlix, IF Amp	OCR Scan	ECG107 ro-92 ECG108 ECG121 ECG121MP* ECG123 ECG123A ECG159 ECG159MCP ECG123AP transistor ECG128 ECG128 ECG152 ECG127 transistor ECG123 transistor ECG123a	PDF
NPN MATCHED PAIRS Abstract: 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58 Text: BI-POLAR TRANSISTORS NTE TVpe Number Polarity and Material Description and Application 59 PNP-Si High Pwr Audio Output Compl to N TE 58 60 NPN-Si High Pwr Audio, Disk Head , Positioner, Linear Applications (Compl to NTE61) 60MP NPN-Si Matched Pair of NTE60	OCR Scan	NTE58) NTE61) NTE60 NTE60) NTE88) NTE87 NTE87) NTE88 b43125ci NPN MATCHED PAIRS 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58	PDF
2N1997 Abstract: No abstract text available Text: 2N 3996 2N 3997 2N 3998 2N 3999 ^ General 3 ^ Semiconductor J^C ÿ Industries, Inc. NPN SILICON HIGH POWER TRANSISTORS DIFFUSED SILIC O N E P ITA X IA L PASSIVATED TRAN SISTO R Th ese devices are designed fo r use in power a m p lifie rs and high speed sw itchin g a p p li	OCR Scan	2N1997) 2N1997	PDF
A1381 transistor Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034 Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V A1381 transistor 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034	PDF
ecg123A Abstract: ECG123AP transistor ECG123a transistor ECG123 ECG159 transistor ECG128 ECG107 ECG123 ECG130 ECG153 Text: Transistors cont'd ECG Type ECG107 Description and Application (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts b v CBO Collector To Emitter Volts b v CEO NPN-Si, UH F/VH F Am p, Osc, Vlix, IF Am p 35 ECG108 NPN-Si, R F /IF /V ideo Am p,	OCR Scan	ECG107 ECG108 ECG121 ECG121MP* ECG123 ECG123A ECG123AP ECG159 ECG160 ECG161 ECG123AP transistor ECG123a transistor ECG123 ECG159 transistor ECG128 ECG130 ECG153	PDF
transistor 3904 Abstract: transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn Text: N e w T o T h e 2 3 E D t T i a N - . . c o M Small Signal Transistors High Current NPN and PNP Transistors in an SOT-23 package. These new small signal transistors provide an increased current capability and high hpE- CMPT491E CMPT591E - 1 Amp Low VCE SAT NPN High Current Transistor See page 338.	OCR Scan	OT-23 CMPT491E CMPT591E OT-23 OT-223 CMPTA46 CMPTA96 CZTA46 CZTA96 transistor 3904 transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn	PDF
NTE2314 Abstract: NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ Text: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts Diag. No. Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain b v CEO BVEBo h pE Pd 't 31a •c 0.05 BV cbo	OCR Scan	NTE397) NTE396) NTE375) T0220 T0218 NTE2314) NTE2306) NTE2314 NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ	PDF

TO 63 5 AMP NPN Search Results

TO 63 5 AMP NPN Result Highlights (5)

TO 63 5 AMP NPN Datasheets Context Search

transistor array high frequency

100 amp power transistor

2N5190

2N5686 motorola

IR3001

D72F5T2 NPN

BD791 equivalent

IR642

BD179-10 equivalent

transistor MJE243 equivalent

2SA1046

MJE34 equivalent

bdx54c equivalent

2N5631 equivalent

Motorola case 77

2N6215

transistor mje29

ECG123AP

NPN MATCHED PAIRS

2N1997

A1381 transistor

ecg123A

transistor 3904

NTE2314