equivalent of BS170
Abstract: pin diagram of bs170 BS170
Text: BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR POWER SEMICONDUCTOR Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A TO-92 B C Mechanical Data • • • • Case: TO-92, Plastic
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BS170
MIL-STD-202,
DS21802
equivalent of BS170
pin diagram of bs170
BS170
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BS170
Abstract: No abstract text available
Text: BS170 VISHAY N-CHANNEL ENHANCEMENT MODE TRANSISTOR /Li T E M I ri I POWER SEMICONDUCTOR / Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown TO-92 Mechanical Data Case: TO-92, Plastic
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BS170
MIL-STD-202,
DS21802
BS170
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PDF
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equivalent of BS170
Abstract: 2n7000 equivalent mosfet bs170 BS270 mosfet 2n7000 2N7000BU EQUIVALENT FOR bs170 2N7000 MOSFET 2N7000TA BS170
Text: Discrete MOSFET TO-92 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-92 N-Channel BS270 60 Single 2 - - - - 0.4 0.63 2N7000BU 60 Single 5 - - - - 0.2 0.4 2N7000TA 60 Single
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BS270
2N7000BU
2N7000TA
BS170
2N7000
FQNL2N50B
FQNL1N50B
equivalent of BS170
2n7000 equivalent
mosfet bs170
BS270
mosfet 2n7000
2N7000BU
EQUIVALENT FOR bs170
2N7000 MOSFET
2N7000TA
BS170
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PDF
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Untitled
Abstract: No abstract text available
Text: Small-Signal DMOS Transistors Package Leaded VDSS Volt TO-92 TO-92 N-Channel P-Channel 50 60 240 BS250 2N7000 Surface Mount SOT-23 SOT-23 ID mA RDS(ON) (Ω) @ VGS /ID BSN20 + 100 15 10V / 100mA 2N7002 250 3 10V / 500mA 250 5 10V / 200mA 300 5 10V / 500mA
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OT-23
2N7000
BSN20
BS250
100mA
2N7002
500mA
200mA
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PDF
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bs170
Abstract: TO 92 BS170
Text: BS170 Vishay Semiconductors formerly General Semiconductor DMOS Transistor N-Channel TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) Features min. 0.492 (12.5) 0.181 (4.6) • • • • • • • High input impedance High-speed switching No minority carrier storage time
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BS170
O-226AA
20K/box
20K/box
10-May-02
bs170
TO 92 BS170
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PDF
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BS170
Abstract: No abstract text available
Text: BS170 DMOS Transistor N-Channel TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) Features min. 0.492 (12.5) 0.181 (4.6) • • • • • • • High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway
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BS170
O-226AA
20K/box
20K/box
BS170
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PDF
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BS170
Abstract: No abstract text available
Text: BS170 DMOS Transistor N-Channel TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) Features min. 0.492 (12.5) 0.181 (4.6) • • • • • • • max. ∅ 0.022 (0.55) High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input
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Original
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BS170
O-226AA
BS170
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PDF
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Untitled
Abstract: No abstract text available
Text: BS170 VISHAY N-CHANNEL ENHANCEMENT MODE TRANSISTOR E M ir / I/uPOWEFTSEMICONDUCTOR Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown A TO-92 Mechanical Data_
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BS170
MIL-STD-202,
DS21802
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PDF
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fet n BS170
Abstract: No abstract text available
Text: WTELEDYNE COMPONENTS BS170 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FET ABSOLUTE MAXIMUM RATINGS FEATURES • ■ ■ TC = +25°C unless otherwise specified Reliable, low cost, plastic package European TO-92 pin-out Low capacitance Drain-Source Voltage. 60V
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BS170
fet n BS170
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PDF
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Untitled
Abstract: No abstract text available
Text: BS170 N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • Low ROSon• Direct interface to C-MOS, TTL, etc.
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BS170
100pA
I03b004
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PDF
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philips bs170
Abstract: No abstract text available
Text: Product specification Philips Semiconductors N-channel vertical D-MOS transistor BS170 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended fo r
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BS170
ax830
philips bs170
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PDF
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transistor BS170
Abstract: max 1987 BS170 kbl transistor
Text: BS170 J \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • Low RDSon• Direct interface to C-MOS, T T L , etc.
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BS170
7Z88773
transistor BS170
max 1987
BS170
kbl transistor
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PDF
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FDC6331
Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3
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2N7002
2N7002MTF
BS170
BSS123
BSS138
BSS84
FDB045AN08A0
FDB2532
FDB3632
FDB3652
FDC6331
fdp047an
FDB045AN
FQPF10N20
FQA70N15
FQPF*13N06L
fdd5614p
fqp50n06
TO252-DPAK
FDC6305
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PDF
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pin diagram of bs170
Abstract: bs170 TO-92 TO 92 BS170
Text: TELEDYNE COMPONENTS ôcil7bOE 00077^^ 5 • TSC 3bE D T -S 5 -2 .5 WTELEDYNE COMPONENTS BS170 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FET FEATURES ABSOLUTE MAXIMUM RATINGS ■ ■ ■ Reliable,low cost, plastic package European TO -92 pin-out Low capacitance
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BS170
pin diagram of bs170
bs170 TO-92
TO 92 BS170
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PDF
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equivalent of BS170
Abstract: BS170 bs170 TO-92 bs170 datasheet transistor BS170 TO 92 BS170
Text: BS170 DMOS Transistors N-Channel FEATURES TO-92 .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) ♦ ♦ ♦ ♦ ♦ ♦ High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown
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BS170
equivalent of BS170
BS170
bs170 TO-92
bs170 datasheet
transistor BS170
TO 92 BS170
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PDF
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Untitled
Abstract: No abstract text available
Text: BS170 J V_ FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.
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BS170
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PDF
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BS170
Abstract: No abstract text available
Text: BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown TO-92 Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — D 0.41 0.63 E 3.43 3.68 G 2.42 2.67 H
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BS170
MIL-STD-202,
DS21802
BS170
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PDF
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Untitled
Abstract: No abstract text available
Text: BS170 _ FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant enveloae and intended for use in relay, high-speed and line-transformer drivers.
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BS170
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PDF
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BS170KL
Abstract: 170KL 2n7000kl equivalent 2N7000KL-TR1 BS170KL-TR1 2N7000KL RG173
Text: 2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V
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2N7000KL/BS170KL
O-226AA
O-92-18RM
7000KL
170KL
S-40247--Rev.
16-Feb-04
BS170KL
170KL
2n7000kl equivalent
2N7000KL-TR1
BS170KL-TR1
2N7000KL
RG173
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PDF
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2N7000KL
Abstract: 170KL BS170KL-TR1 2N7000KL-TR1
Text: 2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V
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2N7000KL/BS170KL
O-226AA
O-92-18RM
7000KL
170KL
08-Apr-05
2N7000KL
170KL
BS170KL-TR1
2N7000KL-TR1
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PDF
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transistor s70
Abstract: Marking S70 pin
Text: DMOS Transistors N-Channel Enhancement-Mode DMOS Transistors =TO-92 Plastic Package Type Pin Config. Maximum Drain-Source Voltage Maximum Continuous Drain Current Max. Power Dissipation at Tc = 25 °C Drain-Source ON Resistance ') Gate Threshold Voltage
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BS108
BS123
BS170
2N7000
O-236
BS850
transistor s70
Marking S70 pin
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PDF
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bs170
Abstract: No abstract text available
Text: G en era l S e m i c o n d u c t o r _ BS170 DMOS Transistor N-Channel TO-226AA (TO-92) 0 . 1 8 1 (4 .6) 0 .1 4 2 (3 .6) Features_ • High input im pedance • High-speed switching • No m inority carrier storage tim e
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BS170
O-226AA
20K/box
20K/box
bs170
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PDF
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VMOS Transistor
Abstract: BS170 v-mos AH47 BS170
Text: BS170 Enhancement Mode N-Channel VMOS Transistor Features: High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown 4 CD •si' — •HA rr ♦ r^‘ i m ax.Q 5$ Plastic case « JEDEC TO-92
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BS170
100/xA,
VMOS Transistor
BS170 v-mos
AH47
BS170
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PDF
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BS250
Abstract: Bs170 P-channel equivalent of BS250 equivalent of BS170 2n7000 equivalent BS170 2N7000 bs170 datasheet BS250 datasheet 2N7002
Text: SMALL SIGNAL DMOS TRANSISTORS Package VDSS Volt Leaded TO-92 Surface Mount Device SOT-23 ID (mA) RDS(ON) (Ω) @VGS / ID 250 7.5 10V / 500mA 250 5 10V / 200mA 2N7000 300 5 10V / 500mA BS170 300 5 10V / 200mA N-Channel P-Channel N-Channel P-Channel 2N7002
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OT-23
500mA
200mA
2N7000
BS170
2N7002
BS250
BS870
BS250
Bs170 P-channel
equivalent of BS250
equivalent of BS170
2n7000 equivalent
BS170
2N7000
bs170 datasheet
BS250 datasheet
2N7002
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PDF
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