str 6707
Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.
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Original
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M3D067
BF859
O-202
MBH794
O-202)
SCA63
115002/00/03/pp8
str 6707
philips 23
2108 npn transistor
ic str 6707
TO-202 transistor NPN
BF859
BP317
D-20097
transistor d 2333
philips ltd 202
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PDF
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2N4124
Abstract: No abstract text available
Text: 2N4124 NPN SMALL SIGNAL TRANSISTOR Features • · For General Purpose Switching and Amplifier Applications Especially Suitable for AF Driver and Low Power Output Stages E A TO-92 B Mechanical Data · · · · C Case: TO-92, Plastic Leads: Solderable per MIL STD 202,
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Original
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2N4124
50MhZ
DS21601
2N4124
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PDF
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Transistor MPSA13
Abstract: mpsa14
Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features • · · High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data · · · · C Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,
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Original
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MPSA13
MPSA14
MIL-STD-202,
100mA,
100mA
100MHz
300ms,
DS11111
Transistor MPSA13
mpsa14
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PDF
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MPSA06
Abstract: DA11104 mpsa05 MPS-A06
Text: MPSA05 / MPSA06 NPN SMALL SIGNAL TRANSISTOR Features • · · Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages E A TO-92 B Mechanical Data · · · · · C Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,
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Original
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MPSA05
MPSA06
MIL-STD-202,
MPSA06
DA11104
MPS-A06
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PDF
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Untitled
Abstract: No abstract text available
Text: MPSA42 NPN HIGH VOLTAGE TRANSISTOR Features • · · Epitaxial Planar Die Construction 300 Volt Collector-Emitter Voltage Complimentary PNP Type Available MPSA92 E A Mechanical Data · · · · · C Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,
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Original
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MPSA42
MPSA92)
MIL-STD-202,
MPSA42
100mA,
100MHz
DA11106
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PDF
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Untitled
Abstract: No abstract text available
Text: MPSA05 / MPSA06 NPN SMALL SIGNAL TRANSISTOR Features • · · Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages E A TO-92 B Mechanical Data · · · · · C Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,
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Original
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MPSA05
MPSA06
MIL-STD-202,
100mA
100mA,
100MHz
MPSA05
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PDF
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2n5172
Abstract: No abstract text available
Text: 2N5172 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • High Current Gain 600 mW Power Dissipation E A TO-92 B Dim Min Max A 4.32 4.83 Mechanical Data • • • • • C Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208
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Original
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2N5172
MIL-STD-202,
DS21602
2n5172
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PDF
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Untitled
Abstract: No abstract text available
Text: fcT I ISI E G 2SC D • Ö235b05 G0G4352 T NPN Silicon Planar Transistor BD 424 T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets
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OCR Scan
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235b05
G0G4352
Q62702-D1068
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PDF
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2sc 103 transistor
Abstract: transistor BD 430
Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in
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OCR Scan
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Q62702-D1069
-T-33-OS
fl23SbQS
BD429
2sc 103 transistor
transistor BD 430
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PDF
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transistor BD 424
Abstract: a06 transistor 000M353 BD424 Q62702-D1068 S100 transistor A08 A07 NPN transistor transistor bd 202
Text: bâ I 25C D • fl23Sb05 G0D4352 T ISIEG BD 424 NPN Silicon Planar Transistor T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets
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OCR Scan
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235b05
G0G4352
Q62702-D1068
QDQ43SM
BD424
transistor BD 424
a06 transistor
000M353
BD424
Q62702-D1068
S100
transistor A08
A07 NPN transistor
transistor bd 202
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PDF
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transistor a13
Abstract: MARKING WL MPSA13 MPSA14
Text: TRANSYS MPSA13 / MPSA14 ELECTRONICS NPN DARLINGTON TRANSISTOR LIMITED Features High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,
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OCR Scan
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MPSA13
MPSA14
MIL-STD-202,
MPSA14
100mA,
100mA
100MHz
transistor a13
MARKING WL
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PDF
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Untitled
Abstract: No abstract text available
Text: MPSA92 PNP HIGH VOLTAGE SMALL SIGNAL TRANSISTOR Features • • • Epitaxial Planar Die Construction -300V Collector-Emitter Voltage Complimentary NPN Type Available MPSA42 KM TO-92 Mechanical Data_ Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,
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OCR Scan
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MPSA92
-300V
MPSA42)
MIL-STD-202,
MPSA42
-200V,
-10mA,
-30mA,
-20mA,
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PDF
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BD429
Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor
Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in
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OCR Scan
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fl23Sfc
Q62702-D1069
BD429
fnb33
D1069
Q62702-D1069
fcdc
2SC 102
bD 106 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: MPSA42 NPN HIGH VOLTAGE TRANSISTOR Features • • • KM MH Epitaxial Planar Die Construction 300 Volt Collector-Emitter Voltage Complimentary PNP Type Available MPSA92 TO-92 Dim Mechanical Data_ Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,
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OCR Scan
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MPSA42
MPSA92)
MIL-STD-202,
100MHz
300ps,
DS11106
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PDF
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2N4124
Abstract: No abstract text available
Text: TRANSYS 2N4124 ELECTRONICS NPN SMALL SIGNAL TRANSISTOR LIMITED Features For General Purpose Switching and Amplifier Applications Especially Suitable for AF Driver and Low Power Output Stages TO-92 Mechanical Data_ Case: TO-92, Plastic Leads: Solderable per MIL STD 202,
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OCR Scan
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2N4124
50MhZ
2N4124
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PDF
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Untitled
Abstract: No abstract text available
Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ • • • • Case: TO -92, Molded Plastic Leads: Solderable per M IL-STD-202,
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OCR Scan
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MPSA13
MPSA14
IL-STD-202,
100mA,
100mA
100MHz
300ns,
DS11111
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PDF
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MPSA14
Abstract: MPSA13
Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram
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OCR Scan
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MPSA13
MPSA14
MIL-STD-202,
MPSA14
100nA,
100mA,
100MHz
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PDF
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2N5172
Abstract: DS21602
Text: 2N5172 NPN SMALL SIGNAL TRANSISTOR Features High Current Gain 600 mW Power Dissipation KM M-H TO-92 Dim Min Max A 4.32 4.83 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Marking: Type Number
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OCR Scan
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2N5172
MIL-STD-202,
DS21602
2N5172
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PDF
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BC337
Abstract: DS21610
Text: BC337 NPN EPITAXIAL PLANAR TRANSISTOR Features Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation T B TO-92 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,
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OCR Scan
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BC337
625mW
MIL-STD-202,
300mA
500mA,
50MHz
DS21610
BC337
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PDF
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mps-AO5 transistor
Abstract: MPSA06 MPSA05 TO-92 CASE MPSA06 transistor MPSA06
Text: 3 K MPSA05 / MPSA06 NPN SMALL SIGNAL TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages TO-92 Mechanical Data Case: TO -92, Plastic Leads: Solderable per M IL-STD-202,
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OCR Scan
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MIL-STD-202,
MPSA06
MPSA05
MPSA06
100pA,
PSA05
100mA
mps-AO5 transistor
TO-92 CASE MPSA06
transistor MPSA06
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PDF
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marking EB 202 transistor
Abstract: No abstract text available
Text: 2N5172 VISHAY NPN SMALL SIGNAL TRANSISTOR /uTE M ir I POWER SEMICONDUCTOR J Features High Current Gain 600 mW Power Dissipation TO-92 Dim Min Max A 4.32 4.83 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram
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OCR Scan
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2N5172
MIL-STD-202,
10pxA
DS21602
marking EB 202 transistor
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PDF
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MPSA42
Abstract: MPSA92
Text: vShw MPSA42 NPN HIGH VOLTAGE TRANSISTOR y LITEM ZI POW ER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction 300 Volt Collector-Emitter Voltage Complimentary PNP Type Available MPSA92 TO-92 M echanical Data Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,
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OCR Scan
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MPSA42
MPSA92)
MIL-STD-202,
MPSA42
100MHz
300ps,
DS11106
MPSA92
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PDF
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CEN-U45
Abstract: No abstract text available
Text: Datasheet central Sem icondu ctor Corp. CEN-U45 NPN SILICON DARLINGTON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-202 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR CEN-U45 type is a NPN Silicon Monolithic Darlington Transistor designed
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OCR Scan
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CEN-U45
T0-202
CEN-U45
200mA
500mA
200mA,
100MHz
O-202
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PDF
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MPSU10 equivalent
Abstract: MPSU10 MPS-U10 CEN-U10 "Silicon Power Transistor"
Text: Datasheet CEN-U10 W Q lH a U l Semiconductor Corp. NPN SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-202 CASE (EBC) Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR CEN-U10 type is a NPN Silicon Power Transistor designed for high voltage
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OCR Scan
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CEN-U10
O-202
CEN-U10
MPSU10.
100hA
10mAf
100MHz
MPSU10 equivalent
MPSU10
MPS-U10
"Silicon Power Transistor"
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PDF
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