Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TO-220 N-CHANNEL HEXFET POWER MOSFET Search Results

    TO-220 N-CHANNEL HEXFET POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO-220 N-CHANNEL HEXFET POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HEXFET Power MOSFET designer manual

    Abstract: GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent
    Text: Application Note AN-937 Gate Drive Characteristics and Requirements for HEXFET Power MOSFETs Table of Contents Page 1. Gate Drive Vs Base Drive . 1 2. Gate Voltage Limitations . 2


    Original     		PDF AN-937 500ns/div HEXFET Power MOSFET designer manual GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    GBAN-PVI-1

    Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary
    Text: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit


    Original     		PDF AN-937 500ns/div GBAN-PVI-1 ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary

    AN-944A

    Abstract: AN944A AN934B IRF130 IRF430 IRF440 what is THERMAL RUNAWAY IN RECTIFIER MOSFET i-pak Package zener diode MOSFET reliability report format AN949A High frequency switching
    Text: EXECUTIVE SUMMARY FIFTY FIFTH QUARTERLY REPORT This Quarterly Reliability Report is a summary of test data covering the previous twenty four months of component testing at International Rectifier's HEXFET America facility in Temecula, California. The products tested include HEXFETs packaged in TO-220,


    Original     		PDF O-220, O-247 O-220 O-220/D2Pak AN-944A AN944A AN934B IRF130 IRF430 IRF440 what is THERMAL RUNAWAY IN RECTIFIER MOSFET i-pak Package zener diode MOSFET reliability report format AN949A High frequency switching

    266CT125-3E2A

    Abstract: GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A
    Text: AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit


    Original     		PDF AN-937 500ns/div 266CT125-3E2A GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A

    irf 1740

    Abstract: 48V SMPS smps 48v 12v
    Text: PD- 96128 IRF7478QPbF SMPS MOSFET HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free Description


    Original     		PDF IRF7478QPbF irf 1740 48V SMPS smps 48v 12v

    Untitled

    Abstract: No abstract text available
    Text: PD- 96128B END OF LIFE IRF7478QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free VDSS RDS on max (mW) ID 26@VGS = 10V


    Original     		PDF 96128B IRF7478QPbF

    Untitled

    Abstract: No abstract text available
    Text: PD- 96128A IRF7478QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free VDSS These HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching


    Original     		PDF 6128A IRF7478QPbF

    irf 1740

    Abstract: EIA-541 P Channel Power MOSFET IRF
    Text: PD- 96128A IRF7478QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description These HEXFET Power MOSFET's are a 150°C


    Original     		PDF 6128A IRF7478QPbF irf 1740 EIA-541 P Channel Power MOSFET IRF

    IRF P-Channel FET 100v

    Abstract: HEXFETs FETs 100v 23A P-Channel MOSFET IRF P CHANNEL MOSFET 10A 100V IRHQ6110 IRHQ63110
    Text: PD - 91781 IRHQ6110 IRHQ63110 COMBINATION N AND P CHANNEL 2 EACH MEGA RAD HARD HEXFET TRANSISTORS Ω (N channel ) MEGA RAD HARD HEXFET 100 Volt, 0.38Ω Ω (P channel ) RAD HARD HEXFET and -100 Volt, 0.88Ω International Rectifier’s MEGA RADHARD Technology


    Original     		PDF IRHQ6110 IRHQ63110 3x105 to1x105 IRF P-Channel FET 100v HEXFETs FETs 100v 23A P-Channel MOSFET IRF P CHANNEL MOSFET 10A 100V IRHQ6110 IRHQ63110

    IRF5905

    Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
    Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES


    Original     		PDF O-220/D2PAK IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB

    hp laptop MOTHERBOARD pcb CIRCUIT diagram

    Abstract: ips 500w circuit diagram 800w class d circuit diagram schematics IRS2092 audio amplifier circuit diagram 700w audio amplifier circuit diagram schematic diagram Electronic Ballast xenon 2000w audio amplifier circuit diagram 1000w class d circuit diagram schematics IR2153 spice model circuit diagram of smps 400w DESKTOP
    Text: Product Line Overview Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that enable customers to add energyconserving features that achieve lower operating energy costs and manufacturing Bill of Material


    Original     		PDF

    IRFIP250

    Abstract: IRFIP254 SILR IRLI3705G
    Text: International HEXFET Power MOSFETs Fully Isolated HEXFET SilRectifier Logic-level HEXFETs are fully-enhanced with 4 or 5V applied to the gate. TO-220 FullPak Logic Level N-Channel Part Number IRLI2203G IRLI3705G IRLIZ14G IRLIZ24G IRLIZ34G IRLIZ44G IRLI520G


    OCR Scan     		PDF O-220 IRFIP044 IRFIP054 IRFIP140 IRFIP150 IRFIP240 IRFIP250 IRFIP244 IRFIP254 IRFIP340 SILR IRLI3705G

    IRFBC20

    Abstract: IRF9511 IRFBE32
    Text: International I» i Rectifier HEXFET Power MOSFETs Plastic Insertale Package TO-220 N-Channel Part Number V os Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) I q Continuous Drain Current 25°C Case (Amps) •DM Pu'“ Drain Current (Amps)


    OCR Scan     		PDF O-220 IRF712 IRF710 IRF722 IRF720 IRF732 IRF730 IRF742 IRF740 IRF823 IRFBC20 IRF9511 IRFBE32

    3 phase inverter 120 conduction mode waveform

    Abstract: inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter
    Text: Using HEXFET III in PWM Inverters for Motor Drives and UPS Systems HEXFET is a registered trademark of International Rectifier by D. Grant The PWM Inverter Introduction The advantages o f MOSFETs for high frequency pulse-width modulated (PWM) inverters and choppers for variable speed


    OCR Scan     		PDF AN-967A 3 phase inverter 120 conduction mode waveform inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter

    irf740 spice model

    Abstract: IRF740
    Text: HE D I 4âSS452 QÛ0ÔS44 0 | Data Sheet No. PD-9.375G INTERNATIONAL RECTIFIER T INTERNATIONAL. RECTIFIER l O R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF740 IRF74Ì IRF742 N-CHANNEL IRF743 Product Summary 400 Volt, 0.55 Ohm HEXFET T0-220AB Plastic Package


    OCR Scan     		PDF SS452 IRF740 IRF74Ã IRF742 IRF743 T0-220AB IRF741 C-299 irf740 spice model IRF740

    IRFT003

    Abstract: automatic volume control using lm358 IRFT003http://datasheet.datasheetarchive.com/originals/scans/Scans-021/ScansEX27879.pdf disadvantages of automatic room power control CPY203E lm358 current sense 10a disadvantages of automatic room control IRCC034 LM324 pin configuration of TLC271
    Text: INTERNATIONAL RECTIFIER bSE D • 4ÛS5MS5 QQlbSOB 3SÔ ■ INR Data Sheet No. PD-5.014D International [^Rectifier HEXFET Power Module CPY203E & IRFT003 Power H-Brldges Description/Featu res Product Summary The CPY203E and the IRFT003 are intended for use


    OCR Scan     		PDF S54SH CPY203E IRFT003 CPY203E automatic volume control using lm358 IRFT003http://datasheet.datasheetarchive.com/originals/scans/Scans-021/ScansEX27879.pdf disadvantages of automatic room power control lm358 current sense 10a disadvantages of automatic room control IRCC034 LM324 pin configuration of TLC271

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1433 I R Rectifier dv/dt R A T E D HEXFET TRANSISTOR R E P E T IT IV E A V A L A N C H E A N D IR H N A 9160 P-CHANNEL RAD HARD Product Summary -100Volt, 0.087a RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology


    OCR Scan     		PDF A9160 -100Volt,

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1433 International IO R Rectifier REPETITIVE AVALANCHE AND dv/dtRATED IRHNA9160 H EX FET* T R A N S IS T O R P -C H A N N E L RAD HARD -lOOUott, 0.0870, RAD HARD HEXFET International R ectifier* P-Channel RAD HARD technology


    OCR Scan     		PDF IRHNA9160

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-6.013A International [ml Rectifier HIGH VOLTAGE IR 2 TIO L MOS GATE DRIVER General Description Features The IR2110L is a high voltage, high speed MOSgated power device driver with independent high side and low side referenced output channels. Proprietary


    OCR Scan     		PDF IR2110L IR2110L MO-Q36AB

    IR2110 application note

    Abstract: driver circuit for MOSFET IR2110 IR2110 ac control using ir2110 and mosfet IR2110 MOSFET DRIVER IR2110 gate driver for mosfet
    Text: fîe ì;ì :3Sk. Data Sheet No. PD-6.011B INTERNATIONAL RECTIFIER HIGH VOLTAGE MOS GATE DRIVER IR2HO General Description Features The IR2110 is a high voltage, high speed MOSgated power device driver with independent high side and low side referenced output channels. Proprietary


    OCR Scan     		PDF IR2110 D-6380 IR2110 application note driver circuit for MOSFET IR2110 ac control using ir2110 and mosfet IR2110 MOSFET DRIVER IR2110 gate driver for mosfet

    CPY203E

    Abstract: IRFC9130
    Text: INTE RN ATI ON AL RECTIFIER SbE D 4055450 001G4b3 1 Data Sheet No. PD-5.014B International Rectifier T - & - S L 1 HEXFET Power Module CPY200 Series Power H Bridges Product Summary Description/Features The CPY200 series of H EXFET power modules along with the IRFT003 are intended for use in driving subfractional horsepower DC motors and stepper motors,


    OCR Scan     		PDF 001G4b3 CPY200 IRFT003 4S5S452 DP104ha CPY200 AN-959 AN-961 IRFT003 CPY203E IRFC9130

    IR2113 APPLICATION NOTE

    Abstract: IR2113 16 pin
    Text: INTERNATIONAL RECTIFIER bSE î • 4Ö55M52 GCUÖ2G2 TET ■ INR Data Sheet No. PD-6.021 INTERNATIONAL. RECTIFIER HIGH VOLTAGE MOS GATE DRIVER IRS113 General Description Features The IR2113 is a high voltage, high speed MOSgated power device driver with independent high side


    OCR Scan     		PDF 55M52 IRS113 IR2113 D-6380 IR2113 APPLICATION NOTE IR2113 16 pin

    IRFY340

    Abstract: irfv120 IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY430 IRFY440 IRFY9120
    Text: IOR I RFY Series Devices IRFY Series Data Sheet The IRFY Data Sheet de scrib es 12 devices, 8 N -C hannel and 4 P -C hannel, all con tain ed in the T O -257A B package. T his data sheet is arra ng ed to show com m on ta b u la r and gra ph ical inform ation


    OCR Scan     		PDF O-257AB IRFY9140 IRFY9240 IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY340 IRFY430 IRFY340 irfv120 IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY430 IRFY440 IRFY9120