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    TO-247 JEDEC PACKAGE OUTLINE Search Results

    TO-247 JEDEC PACKAGE OUTLINE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    TO-247 JEDEC PACKAGE OUTLINE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    saronix 106.2500

    Abstract: Saronix 32 MHz crystal Saronix 48 MHz crystal E 32.0000 C S1634 marking s4x
    Text: S1634 Series 2.5V CMOS Low Jitter Crystal Clock Oscillator XO Actual Size = 3.2 x 5mm Pin Functions Packaging Outline Product Features • Less than 1.5 ps RMS jitter with fundamental or overtone design • 2.5V CMOS compatible logic levels • Pin-compatible with standard 3.2x5mm packages


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    S1634 saronix 106.2500 Saronix 32 MHz crystal Saronix 48 MHz crystal E 32.0000 C marking s4x PDF

    Saronix 32 MHz crystal

    Abstract: Saronix S1634
    Text: FD Series Crystal Clock Oscillator XO Legacy S1634 Series 5.0 x 3.2mm FD 2.5V CMOS Low Jitter XO Actual Size = 5 x 3.2mm Product Features Pin Functions Packaging Outline • Less than 1.5 ps RMS jitter with fundamental or overtone design Pin Function 1 OE Function


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    S1634 Saronix 32 MHz crystal Saronix PDF

    Untitled

    Abstract: No abstract text available
    Text: ECP052 The Communications Edge TM ½ Watt, High Linearity InGaP HBT Amplifier Product Information ECP052G SOIC-8 Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP052G” designator with an alphanumeric


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    ECP052 ECP052G ECP052G" JESD22-A114 J-STD-020 1-800-WJ1-4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: ECP053 The Communications Edge TM 1/2 Watt, High Linearity InGaP HBT Amplifier Product Information ECP053G SOIC-8 Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP053G” designator with an alphanumeric


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    ECP053 ECP053G ECP053G" JESD22-A114 J-STD-020 1-800-WJ1-4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: ECP200 The Communications Edge TM 2 Watt, High Linearity InGaP HBT Amplifier Product Information ECP200G SOIC-8 Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP200G” designator with an alphanumeric


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    ECP200 ECP200G ECP200G" JESD22-A114 J-STD-020 1-800-WJ1-4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: ECP100 The Communications Edge TM 1 Watt, High Linearity InGaP HBT Amplifier Product Information ECP100G SOIC-8 Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP100G” designator with an alphanumeric


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    ECP100 ECP100G ECP100G" JESD22-A114 J-STD-020 1-800-WJ1-4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: ECP050 The Communications Edge TM 1/2 Watt, High Linearity InGaP HBT Amplifier Product Information ECP050G SOIC-8 Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP050G” designator with an alphanumeric


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    ECP050 ECP050G ECP050G" JESD22-A114 J-STD-020 1-800-WJ1-4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: ECP103 The Communications Edge TM 1 Watt, High Linearity InGaP HBT Amplifier Product Information ECP103G SOIC-8 Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP103G” designator with an alphanumeric


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    ECP103 ECP103G ECP103G" JESD22-A114 J-STD-020 1-800-WJ1-4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: ECP050 The Communications Edge TM 1/2 Watt, High Linearity InGaP HBT Amplifier Product Information ECP050D 16-pin 4x4mm Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP050D” designator with an alphanumeric


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    ECP050 ECP050D 16-pin ECP050D" JESD22-A114 1-800-WJ1-4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: ECP103 The Communications Edge TM 1 Watt, High Linearity InGaP HBT Amplifier Product Information ECP103D 16-pin 4x4mm Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP103D” designator with an alphanumeric


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    ECP103 ECP103D 16-pin ECP103D" JESD22-A114 1-800-WJ1-4401 PDF

    C11RF

    Abstract: No abstract text available
    Text: ECP200 The Communications Edge TM 2 Watt, High Linearity InGaP HBT Amplifier Product Information ECP200D 16-pin 4x4mm Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP200D” designator with an alphanumeric


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    ECP200 ECP200D 16-pin ECP200D" JESD22-A114 1-800-WJ1-4401 C11RF PDF

    Untitled

    Abstract: No abstract text available
    Text: ECP100 The Communications Edge TM 1 Watt, High Linearity InGaP HBT Amplifier Product Information ECP100D 16-pin 4x4mm Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP100D” designator with an alphanumeric


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    ECP100 ECP100D 16-pin ECP100D" JESD22-A114 1-800-WJ1-4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: ECP052 The Communications Edge TM ½ Watt, High Linearity InGaP HBT Amplifier Product Information ECP052D 16-pin 4x4mm Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP052D” designator with an alphanumeric


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    ECP052 ECP052D 16-pin ECP052D" JESD22-A114 1-800-WJ1-4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: ECP203 The Communications Edge TM 2 Watt, High Linearity InGaP HBT Amplifier Product Information ECP203D 16-pin 4x4mm Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP203D” designator with an alphanumeric


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    ECP203 ECP203D 16-pin ECP203D" JESD22-A114 1-800-WJ1-4401 PDF

    MO-178

    Abstract: SN65LVDS1 SN65LVDT2 EIA-644
    Text: SN65LVDS1 HIGH-SPEED DIFFERENTIAL LINE DRIVER SLLS373C – JULY 1999 – REVISED JUNE 2000 D D D D D D D D D D Meets or Exceeds ANSI TIA/EIA-644-1995 Standard Designed for Signaling Rates up to 630 Mbps Operates From a 2.4-V to 3.6-V Supply Package in Small-Outline Transistor


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    SN65LVDS1 SLLS373C TIA/EIA-644-1995 MO-178 SN65LVDS1 SN65LVDT2 EIA-644 PDF

    EIA-644

    Abstract: MO-178 SN65LVDS1 SN65LVDT2
    Text: SN65LVDS1 HIGH-SPEED DIFFERENTIAL LINE DRIVER SLLS373B – JULY 1999 – DECEMBER 1999 D D D D D D D D D D Meets or Exceeds ANSI TIA/EIA-644-1995 Standard Designed for Signaling Rates up to 630 Mbps Operates From a 2.4-V to 3.6-V Supply Package in Small-Outline Transistor


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    SN65LVDS1 SLLS373B TIA/EIA-644-1995 EIA-644 MO-178 SN65LVDS1 SN65LVDT2 PDF

    IRGPS66160DPBF

    Abstract: No abstract text available
    Text: IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100°C tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 120A E IRGPS66160DPbF Super 247 n-channel Applications • Welding


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    IRGPS66160DPbF IRGPS66160DPbFÂ JESD47F) IRGPS66160DPBF PDF

    Untitled

    Abstract: No abstract text available
    Text: AH116 / ECP052G The Communications Edge TM ½ Watt, High Linearity InGaP HBT Amplifier Product Features Product Information Product Description • 800 – 1000 MHz • +28 dBm P1dB • +43 dBm Output IP3 • 17.5 dB Gain @ 900 MHz • Single Positive Supply +5 V


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    AH116 ECP052G ECP052 1-800-WJ1-4401 PDF

    AH116

    Abstract: AH116-S8 AH116-S8G AH116-S8PCB900 ECP052 ECP052G amplifier circuit diagram 10000 watt WJ COMMUNICATIONS
    Text: AH116 / ECP052G 1/2 Watt, High Linearity InGaP HBT Amplifier Product Features Product Information Product Description • 800 – 1000 MHz • +28 dBm P1dB • +43 dBm Output IP3 • 17.5 dB Gain @ 900 MHz • Single Positive Supply +5 V Functional Diagram


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    AH116 ECP052G ECP052 1-800-WJ1-4401 AH116-S8 AH116-S8G AH116-S8PCB900 ECP052G amplifier circuit diagram 10000 watt WJ COMMUNICATIONS PDF

    Untitled

    Abstract: No abstract text available
    Text: AH116 / ECP052G ½ Watt, High Linearity InGaP HBT Amplifier Product Features Product Information Product Description • 800 – 1000 MHz • +28 dBm P1dB • +43 dBm Output IP3 • 17.5 dB Gain @ 900 MHz • Single Positive Supply +5 V Functional Diagram


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    AH116 ECP052G ECP052 1-800-WJ1-4401 PDF

    MS-001

    Abstract: 402-M74 D 745 PSC4000
    Text: PACKAGE DIAGRAM OUTLINES PLASTIC DIP REVISIONS DCN REV DESCRIPTION DATE 27853 06 REDRAW TO JEDEC FORMAT 03/15/95 APPROVED AA A — I— .0S0/.070 - E - - A I * 1.010 I H lAdXBSX 1 1 - j- GlAUL HLANL It bad l-A-l SEATING PIANE [0151


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    27B53 P16-1 MS-001, 890S4 727-C11S 402-M74 PSC-4000 MS-001 D 745 PSC4000 PDF

    OM803

    Abstract: No abstract text available
    Text: OM7605SC OM7606SC OM7607SC ISOLATED HERMETIC TO-258AA FIXED VOLTAGE REGULATORS Three Terminal. Fixed Voltage. 3.0 Amp Precision Positive Regulator In Hermetic JEDEC TO-258AA Package FEATURES • • • • • • Isolated Hermetic Package, JEDEC TO-258AA Outline


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    OM7605SC OM7606SC OM7607SC O-258AA OM803 OM803 PDF

    RT 2070 L

    Abstract: ansi y14.5m-1982 decimal 2097b MS-001 72741
    Text: PACKAGE DIAGRAM OUTLINES PLASTIC DIP R E V ISIO N S DCN REV DESCRIPTION DATE 27853 06 REDRAW TO JEDEC FORMAT 03/15/95 APPROVED A A A — I— - E - - .0S0/.070 A I * 1 .01 0 I H lAdXBSX 1 1 - j- GlAUL HLANL It bad l-A -l SEATING PIANE


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    27B53 P16-1 MS-010, 9S054 PSC-4034 RT 2070 L ansi y14.5m-1982 decimal 2097b MS-001 72741 PDF

    2sa1363

    Abstract: mitsubishi 2SA1363
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1363 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1363 is a silicon PNP epitaxial type transistor designed with high OUTLINE DRAWING Uni,:mm collector current and high collector dissipation.


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    2SA1363 2SA1363 2SC3443. 500mW SC-62 mitsubishi 2SA1363 PDF