saronix 106.2500
Abstract: Saronix 32 MHz crystal Saronix 48 MHz crystal E 32.0000 C S1634 marking s4x
Text: S1634 Series 2.5V CMOS Low Jitter Crystal Clock Oscillator XO Actual Size = 3.2 x 5mm Pin Functions Packaging Outline Product Features • Less than 1.5 ps RMS jitter with fundamental or overtone design • 2.5V CMOS compatible logic levels • Pin-compatible with standard 3.2x5mm packages
|
Original
|
S1634
saronix 106.2500
Saronix 32 MHz crystal
Saronix 48 MHz crystal
E 32.0000 C
marking s4x
|
PDF
|
Saronix 32 MHz crystal
Abstract: Saronix S1634
Text: FD Series Crystal Clock Oscillator XO Legacy S1634 Series 5.0 x 3.2mm FD 2.5V CMOS Low Jitter XO Actual Size = 5 x 3.2mm Product Features Pin Functions Packaging Outline • Less than 1.5 ps RMS jitter with fundamental or overtone design Pin Function 1 OE Function
|
Original
|
S1634
Saronix 32 MHz crystal
Saronix
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECP052 The Communications Edge TM ½ Watt, High Linearity InGaP HBT Amplifier Product Information ECP052G SOIC-8 Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP052G” designator with an alphanumeric
|
Original
|
ECP052
ECP052G
ECP052G"
JESD22-A114
J-STD-020
1-800-WJ1-4401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECP053 The Communications Edge TM 1/2 Watt, High Linearity InGaP HBT Amplifier Product Information ECP053G SOIC-8 Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP053G” designator with an alphanumeric
|
Original
|
ECP053
ECP053G
ECP053G"
JESD22-A114
J-STD-020
1-800-WJ1-4401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECP200 The Communications Edge TM 2 Watt, High Linearity InGaP HBT Amplifier Product Information ECP200G SOIC-8 Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP200G” designator with an alphanumeric
|
Original
|
ECP200
ECP200G
ECP200G"
JESD22-A114
J-STD-020
1-800-WJ1-4401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECP100 The Communications Edge TM 1 Watt, High Linearity InGaP HBT Amplifier Product Information ECP100G SOIC-8 Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP100G” designator with an alphanumeric
|
Original
|
ECP100
ECP100G
ECP100G"
JESD22-A114
J-STD-020
1-800-WJ1-4401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECP050 The Communications Edge TM 1/2 Watt, High Linearity InGaP HBT Amplifier Product Information ECP050G SOIC-8 Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP050G” designator with an alphanumeric
|
Original
|
ECP050
ECP050G
ECP050G"
JESD22-A114
J-STD-020
1-800-WJ1-4401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECP103 The Communications Edge TM 1 Watt, High Linearity InGaP HBT Amplifier Product Information ECP103G SOIC-8 Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP103G” designator with an alphanumeric
|
Original
|
ECP103
ECP103G
ECP103G"
JESD22-A114
J-STD-020
1-800-WJ1-4401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECP050 The Communications Edge TM 1/2 Watt, High Linearity InGaP HBT Amplifier Product Information ECP050D 16-pin 4x4mm Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP050D” designator with an alphanumeric
|
Original
|
ECP050
ECP050D
16-pin
ECP050D"
JESD22-A114
1-800-WJ1-4401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECP103 The Communications Edge TM 1 Watt, High Linearity InGaP HBT Amplifier Product Information ECP103D 16-pin 4x4mm Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP103D” designator with an alphanumeric
|
Original
|
ECP103
ECP103D
16-pin
ECP103D"
JESD22-A114
1-800-WJ1-4401
|
PDF
|
C11RF
Abstract: No abstract text available
Text: ECP200 The Communications Edge TM 2 Watt, High Linearity InGaP HBT Amplifier Product Information ECP200D 16-pin 4x4mm Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP200D” designator with an alphanumeric
|
Original
|
ECP200
ECP200D
16-pin
ECP200D"
JESD22-A114
1-800-WJ1-4401
C11RF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECP100 The Communications Edge TM 1 Watt, High Linearity InGaP HBT Amplifier Product Information ECP100D 16-pin 4x4mm Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP100D” designator with an alphanumeric
|
Original
|
ECP100
ECP100D
16-pin
ECP100D"
JESD22-A114
1-800-WJ1-4401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECP052 The Communications Edge TM ½ Watt, High Linearity InGaP HBT Amplifier Product Information ECP052D 16-pin 4x4mm Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP052D” designator with an alphanumeric
|
Original
|
ECP052
ECP052D
16-pin
ECP052D"
JESD22-A114
1-800-WJ1-4401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECP203 The Communications Edge TM 2 Watt, High Linearity InGaP HBT Amplifier Product Information ECP203D 16-pin 4x4mm Package Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP203D” designator with an alphanumeric
|
Original
|
ECP203
ECP203D
16-pin
ECP203D"
JESD22-A114
1-800-WJ1-4401
|
PDF
|
|
MO-178
Abstract: SN65LVDS1 SN65LVDT2 EIA-644
Text: SN65LVDS1 HIGH-SPEED DIFFERENTIAL LINE DRIVER SLLS373C – JULY 1999 – REVISED JUNE 2000 D D D D D D D D D D Meets or Exceeds ANSI TIA/EIA-644-1995 Standard Designed for Signaling Rates up to 630 Mbps Operates From a 2.4-V to 3.6-V Supply Package in Small-Outline Transistor
|
Original
|
SN65LVDS1
SLLS373C
TIA/EIA-644-1995
MO-178
SN65LVDS1
SN65LVDT2
EIA-644
|
PDF
|
EIA-644
Abstract: MO-178 SN65LVDS1 SN65LVDT2
Text: SN65LVDS1 HIGH-SPEED DIFFERENTIAL LINE DRIVER SLLS373B – JULY 1999 – DECEMBER 1999 D D D D D D D D D D Meets or Exceeds ANSI TIA/EIA-644-1995 Standard Designed for Signaling Rates up to 630 Mbps Operates From a 2.4-V to 3.6-V Supply Package in Small-Outline Transistor
|
Original
|
SN65LVDS1
SLLS373B
TIA/EIA-644-1995
EIA-644
MO-178
SN65LVDS1
SN65LVDT2
|
PDF
|
IRGPS66160DPBF
Abstract: No abstract text available
Text: IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100°C tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 120A E IRGPS66160DPbF Super 247 n-channel Applications • Welding
|
Original
|
IRGPS66160DPbF
IRGPS66160DPbFÂ
JESD47F)
IRGPS66160DPBF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AH116 / ECP052G The Communications Edge TM ½ Watt, High Linearity InGaP HBT Amplifier Product Features Product Information Product Description • 800 – 1000 MHz • +28 dBm P1dB • +43 dBm Output IP3 • 17.5 dB Gain @ 900 MHz • Single Positive Supply +5 V
|
Original
|
AH116
ECP052G
ECP052
1-800-WJ1-4401
|
PDF
|
AH116
Abstract: AH116-S8 AH116-S8G AH116-S8PCB900 ECP052 ECP052G amplifier circuit diagram 10000 watt WJ COMMUNICATIONS
Text: AH116 / ECP052G 1/2 Watt, High Linearity InGaP HBT Amplifier Product Features Product Information Product Description • 800 – 1000 MHz • +28 dBm P1dB • +43 dBm Output IP3 • 17.5 dB Gain @ 900 MHz • Single Positive Supply +5 V Functional Diagram
|
Original
|
AH116
ECP052G
ECP052
1-800-WJ1-4401
AH116-S8
AH116-S8G
AH116-S8PCB900
ECP052G
amplifier circuit diagram 10000 watt
WJ COMMUNICATIONS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AH116 / ECP052G ½ Watt, High Linearity InGaP HBT Amplifier Product Features Product Information Product Description • 800 – 1000 MHz • +28 dBm P1dB • +43 dBm Output IP3 • 17.5 dB Gain @ 900 MHz • Single Positive Supply +5 V Functional Diagram
|
Original
|
AH116
ECP052G
ECP052
1-800-WJ1-4401
|
PDF
|
MS-001
Abstract: 402-M74 D 745 PSC4000
Text: PACKAGE DIAGRAM OUTLINES PLASTIC DIP REVISIONS DCN REV DESCRIPTION DATE 27853 06 REDRAW TO JEDEC FORMAT 03/15/95 APPROVED AA A — I— .0S0/.070 - E - - A I * 1.010 I H lAdXBSX 1 1 - j- GlAUL HLANL It bad l-A-l SEATING PIANE [0151
|
OCR Scan
|
27B53
P16-1
MS-001,
890S4
727-C11S
402-M74
PSC-4000
MS-001
D 745
PSC4000
|
PDF
|
OM803
Abstract: No abstract text available
Text: OM7605SC OM7606SC OM7607SC ISOLATED HERMETIC TO-258AA FIXED VOLTAGE REGULATORS Three Terminal. Fixed Voltage. 3.0 Amp Precision Positive Regulator In Hermetic JEDEC TO-258AA Package FEATURES • • • • • • Isolated Hermetic Package, JEDEC TO-258AA Outline
|
OCR Scan
|
OM7605SC
OM7606SC
OM7607SC
O-258AA
OM803
OM803
|
PDF
|
RT 2070 L
Abstract: ansi y14.5m-1982 decimal 2097b MS-001 72741
Text: PACKAGE DIAGRAM OUTLINES PLASTIC DIP R E V ISIO N S DCN REV DESCRIPTION DATE 27853 06 REDRAW TO JEDEC FORMAT 03/15/95 APPROVED A A A — I— - E - - .0S0/.070 A I * 1 .01 0 I H lAdXBSX 1 1 - j- GlAUL HLANL It bad l-A -l SEATING PIANE
|
OCR Scan
|
27B53
P16-1
MS-010,
9S054
PSC-4034
RT 2070 L
ansi y14.5m-1982 decimal
2097b
MS-001
72741
|
PDF
|
2sa1363
Abstract: mitsubishi 2SA1363
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1363 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1363 is a silicon PNP epitaxial type transistor designed with high OUTLINE DRAWING Uni,:mm collector current and high collector dissipation.
|
OCR Scan
|
2SA1363
2SA1363
2SC3443.
500mW
SC-62
mitsubishi 2SA1363
|
PDF
|