Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT9564 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET 1 DESCRIPTION TO-252 The UTC UT9564 is a P-ch enhancement mode power MOSFET and it uses UTC perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and
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UT9564
O-252
UT9564
UT9564L-TN3-R
UT9564G-TN3-R
UT9564L-S08-R
UT9564G-S08-R
UT9564L-S08-T
UT9564G-S08-T
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT06P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE TO-252 SOT-89 The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.
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UT06P03
O-252
OT-89
UT06P03
OT-26
UT06P03G-AB3-R
UT06P03G-AG6-R
UT06P03L-TN3-R
UT06P03G-TN3-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT9564 Power MOSFET -40V, -7.3A P-CHANNEL ENHANCEMENT MODE POWER MOSFET 1 TO-252 DESCRIPTION The UTC UT9564 is a P-ch enhancement mode power MOSFET and it uses UTC perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and
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UT9564
O-252
UT9564
UT9564L-TN3-R
UT9564G-TN3-R
UT9564L-S08-R
UT9564G-S08-R
UT9564L-S08-T
UT9564G-S08-T
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3020P
Abstract: APM3020P
Text: APM3020P P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-11A, RDS ON = 17mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -5V • • • Super High Density Cell Design Reliable and Rugged TO-252 Package G D S Applications Top View of TO-252
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APM3020P
-30V/-11A,
O-252
O-252
3020P
3020P
APM3020P
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Untitled
Abstract: No abstract text available
Text: SSD3030P P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TO-252 RDS(ON) (mΩ) Max D 25 @VGS = -10V G 45 @VGS = -5V -30A -30V S 55 @VGS = -4.5V D FEATURES Super high density cell design for low RDS(ON) . Rugged and reliable. G TO-252 package.
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SSD3030P
O-252
O-252
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ssd103
Abstract: TO-252 MOSFET p channel
Text: SSD1030P P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TO-252 RDS(ON) (mΩ) Max D 65 @VGS = - 10V -30V G 115 @VGS = - 5V -15A S D 130 @VGS = - 4.5V FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G TO-252 package.
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SSD1030P
O-252
O-252
ssd103
TO-252 MOSFET p channel
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Untitled
Abstract: No abstract text available
Text: SSD2030P P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TO-252 RDS(ON) (mΩ) Max D 40 @VGS = - 10V -30V G 65 @VGS = - 5V -20A S D 75 @VGS = - 4.5V FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G TO-252 package.
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SSD2030P
O-252
O-252
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2070-P
Abstract: ANPEC Marking 2G2 APM2070P J-STD-020A
Text: APM2070P P-Channel Enhancement Mode MOSFET Features • • • • Pin Description -20V/-5A , RDS ON =78mΩ(typ.) @ VGS=-10V RDS(ON)=113mΩ(typ.) @ VGS=-4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged G TO-252 Package D Top View of TO-252
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APM2070P
-20V/-5A
O-252
O-252
2070P
2070-P
ANPEC
Marking 2G2
APM2070P
J-STD-020A
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NP36P06SLG
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION The NP36P06SLG is P-channel MOS Field Effect PART NUMBER PACKAGE NP36P06SLG TO-252 MP-3ZK Transistor designed for high current switching applications.
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NP36P06SLG
NP36P06SLG
O-252
O-252)
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Mosfet
Abstract: SSF4015
Text: SSF4015 40V P-Channel MOSFET Main Product Characteristics VDSS -40V RDS on 11mΩ (typ.) ID －20A D SSF3612D SSF4015 SSF4035 S TO-252 (D-PAK) Marking and Pin Schematic Diagram Assignment Features and Benefits G Advanced trench MOSFET process technology
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SSF4015
SSF3612D
SSF4035
O-252
Mosfet
SSF4015
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SUD45P03-15
Abstract: No abstract text available
Text: SUD45P03-15 Siliconix P-Channel 30-V D-S , 150_C MOSFET Product Summary rDS(on) (W) ID (A)a 0.015 @ VGS = –10 V "13 0.024 @ VGS = –4.5 V "8 VDS (V) –30 30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-15 D P-Channel MOSFET
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SUD45P03-15
O-252
S-57253--Rev.
24-Feb-98
SUD45P03-15
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SUD45P03-15
Abstract: No abstract text available
Text: SUD45P03-15 Siliconix P-Channel 30-V D-S , 150_C MOSFET Product Summary rDS(on) (W) ID (A)a 0.015 @ VGS = –10 V "13 0.024 @ VGS = –4.5 V "8 VDS (V) –30 30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-15 D P-Channel MOSFET
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SUD45P03-15
O-252
18-Jul-08
SUD45P03-15
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SUD45P03-10
Abstract: No abstract text available
Text: SUD45P03-10 Vishay Siliconix P-Channel 30-V D-S , 150_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.010 @ VGS = –10 V –15 0.018 @ VGS = –4.5 V –12 VDS (V) –30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-10 D P-Channel MOSFET
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SUD45P03-10
O-252
S-02596--Rev.
21-Nov-00
SUD45P03-10
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SUD45P03-15A
Abstract: No abstract text available
Text: SUD45P03-15A New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.015 @ VGS = –10 V –15 0.024 @ VGS = –4.5 V –12 VDS (V) –30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-15A D P-Channel MOSFET
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SUD45P03-15A
O-252
Source00
S-00045--Rev.
24-Jan-00
SUD45P03-15A
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SUD45P03-15
Abstract: No abstract text available
Text: SUD45P03-15 Siliconix P-Channel 30-V D-S , 150_C MOSFET Product Summary rDS(on) (W) ID (A)a 0.015 @ VGS = –10 V "13 0.024 @ VGS = –4.5 V "8 VDS (V) –30 30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-15 D P-Channel MOSFET
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SUD45P03-15
O-252
08-Apr-05
SUD45P03-15
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Untitled
Abstract: No abstract text available
Text: SUD45P03-10 Vishay Siliconix P-Channel 30-V D-S , 150_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.010 @ VGS = –10 V "15 0.018 @ VGS = –4.5 V "12 VDS (V) –20 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-10 D P-Channel MOSFET
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SUD45P03-10
O-252
SUD45P03-10
S-49529--Rev.
19-Nov-97
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TO-252 MOSFET
Abstract: TO-252 MOSFET p channel Diode RL 4B SUD45P03-10
Text: SUD45P03-10 Vishay Siliconix P-Channel 30-V D-S , 150_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.010 @ VGS = –10 V –15 0.018 @ VGS = –4.5 V –12 VDS (V) –30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-10 D P-Channel MOSFET
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SUD45P03-10
O-252
08-Apr-05
TO-252 MOSFET
TO-252 MOSFET p channel
Diode RL 4B
SUD45P03-10
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SUD45P03-15A
Abstract: tr 370
Text: SUD45P03-15A New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.015 @ VGS = –10 V –15 0.024 @ VGS = –4.5 V –12 VDS (V) –30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-15A D P-Channel MOSFET
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SUD45P03-15A
O-252
18-Jul-08
SUD45P03-15A
tr 370
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Untitled
Abstract: No abstract text available
Text: SUD45P03-15A New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.015 @ VGS = –10 V –15 0.024 @ VGS = –4.5 V –12 VDS (V) –30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-15A D P-Channel MOSFET
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SUD45P03-15A
O-252
SUD45P03-15A
S-00045--Rev.
24-Jan-00
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SUD45P03-10
Abstract: No abstract text available
Text: SUD45P03-10 Siliconix P-Channel 30-V D-S , 150_C MOSFET New Product Product Summary rDS(on) (W) ID (A)a 0.010 @ VGS = –10 V "15 0.018 @ VGS = –4.5 V "12 VDS (V) –30 30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-10 D P-Channel MOSFET
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SUD45P03-10
O-252
Oper100
S-57253--Rev.
24-Feb-98
SUD45P03-10
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CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223
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O-251/TO-252
O-220/TO-263
OT-23
OT-223
OT-89
2928-8J
O-220FM
CEP50N06
CEP83A3 equivalent
cep83a3
CEF02N6A
cep6355
FQPF8N60C equivalent
CEF04N6 equivalent
CEP63A3
CEP20N06
cep76139
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT40P04 50A, 40V P-CHANNEL POWER MOSFET 1 1 TO - 251 1 TO-252D 1 TO - 252 FEATURES * R DS ON <20mΩ @ V GS =-10V, I D =-12.7A, R DS(ON) <30mΩ@ V GS =-4.5V, I D =-10.4A TO-220 DESCRIPTION The UTC UTT40P04 is a P-channel power MOSFET using UTC’s
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UTT40P04
O-252D
O-220
UTT40P04
UTT40P04L-TA3-T
UTT40P04G-TA3-T
UTT40P04L-TM3-T
QW-R502-616
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CHM4301PAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CHM4301PAGP CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE
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CHM4301PAGP
O-252)
O-252
250uA
CHM4301PAGP
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CHM4531PAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM4531PAGP CURRENT 25 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE
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CHM4531PAGP
O-252)
O-252
250uA
CHM4531PAGP
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