Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU02N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-252
CJU02N60
O-252
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU01N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-252
CJU01N60
O-252
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CHM25N15LPAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CHM25N15LPAGP CURRENT 25 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small package. (TO-252)
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CHM25N15LPAGP
O-252)
250uA
CHM25N15LPAGP
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CHM05N65PAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM05N65PAGP N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 4 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small flat package. D-PAK(TO-252)
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CHM05N65PAGP
O-252)
250uA
CHM05N65PAGP
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.
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O-252
O-252D
OT-223
6N10G-AA3-R
6N10L-TN3-R
6N10G-TN3-R
6N10L-TND-R
6N10G-TND-R
QW-R502-486
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UF630L-TN3-R
Abstract: UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF630
O-220
O-220F
UF630-TA3-T
UF630L-TA3-T
QW-R502-049
UF630L-TN3-R
UF630
UF630-TA3-T
UF630-TF3-T
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UF630L-TN3-R
Abstract: uf630 power mosfet UF630 UF630L-TA3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF630
O-220
O-220F
UF630L-TA3-T
UF630G-TA3-Tt
QW-R502-049
UF630L-TN3-R
uf630 power mosfet
UF630
UF630L-TA3-T
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ut3055
Abstract: diode BA 158 mosfet BA 95 S
Text: UNISONIC TECHNOLOGIES CO., LTD UT3055 Power MOSFET 12A, 25V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC UT3055 is N-Channel logic level enhancement mode field effect transistor. SYMBOL 2.Drain 1 TO-251 1.Gate 3.Source ORDERING INFORMATION
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UT3055
O-252
UT3055
O-251
UT3055-TM3-T
UT3055L-TM3-T
UT3055-TN3-R
UT3055L-TN3-R
UT3055-TN3-T
UT3055L-TN3-T
diode BA 158
mosfet BA 95 S
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UF3055
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF3055 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION 1 TO-252 As an N-channel enhancement mode power MOSFET, the UTC UF3055 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls
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UF3055
O-252
UF3055
OT-223
UF3055L-AA3-R
UF3055G-AA3-R
UF3055L-TN3-R
UF3055G-TN3-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF4N20 Power MOSFET 4A, 200V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC UF4N20 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching
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UF4N20
O-252
UF4N20
OT-223
UF4N20L-TN3-R
UF4N20G-TN3-R
UF4N20L-AA3-R
UF4N20G-AA3-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF4N20Z Power MOSFET 4A, 200V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC UF4N20Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching
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UF4N20Z
O-252
UF4N20Z
OT-223
UF4N20ZL-TN3-R
UF4N20ZG-TN3-R
UF4N20ZL-AA3-R
UF4N20ZG-AA3-R
QW-R502-753
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC UTT6N10Z is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low
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UTT6N10Z
O-252
UTT6N10Z
OT-223
UTT6N10ZG-AA3-R
UTT6N10ZL-TN3-R
UTT6N10ZG-TN3-R
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK
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NP55N04SUG
NP55N04SUG
O-252
O-252)
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d1740
Abstract: NP55N04SUG
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK
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NP55N04SUG
NP55N04SUG
O-252
O-252)
d1740
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TSM5ND50
Abstract: A08 marking marking A08 MOSFET 400V TO-220 SOT-252 18BSC N-Channel mosfet 400v to220 N-CHANNEL POWER MOSFET mosfet "marking code 44" A08 MARKING CODE
Text: TSM5ND50 500V N-Channel Power MOSFET TO-220 TO-252 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM5ND50
O-220
O-252
TSM5ND50
A08 marking
marking A08
MOSFET 400V TO-220
SOT-252
18BSC
N-Channel mosfet 400v to220
N-CHANNEL POWER MOSFET
mosfet "marking code 44"
A08 MARKING CODE
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n-channel 500v sot 23 Power MOSFET
Abstract: "Power MOSFET" ENHANCEMENT MOSFET N-Channel 40V MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET 40v pin diagram of MOSFET marking code B08 and MOSFET 500V 15A 400V power mosfet n-channel mosfet transistor
Text: TSM4ND50 500V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM4ND50
O-252
TSM4ND50
10erty
n-channel 500v sot 23 Power MOSFET
"Power MOSFET"
ENHANCEMENT MOSFET
N-Channel 40V MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 40v
pin diagram of MOSFET
marking code B08 and
MOSFET 500V 15A
400V power mosfet
n-channel mosfet transistor
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n-channel 250V power mosfet
Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V pin diagram of MOSFET "Power MOSFET" ENHANCEMENT MOSFET TO-252 MOSFET circuit diagram of mosfet based power supply mosfet 250V 4A n channel enhancement mosfet n-channel mosfet transistor
Text: TSM5ND50 500V N-Channel Power MOSFET TO-252 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM5ND50
O-252
TSM5ND50
n-channel 250V power mosfet
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
pin diagram of MOSFET
"Power MOSFET"
ENHANCEMENT MOSFET
TO-252 MOSFET
circuit diagram of mosfet based power supply
mosfet 250V 4A
n channel enhancement mosfet
n-channel mosfet transistor
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marking E11 DIODE
Abstract: E11 diode
Text: TSM5ND50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
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TSM5ND50
O-251
O-252
TSM5ND50
marking E11 DIODE
E11 diode
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TSM4ND50
Abstract: MOSFET 500V 15A
Text: TSM4ND50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
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TSM4ND50
O-251
O-252
TSM4ND50
MOSFET 500V 15A
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CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223
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O-251/TO-252
O-220/TO-263
OT-23
OT-223
OT-89
2928-8J
O-220FM
CEP50N06
CEP83A3 equivalent
cep83a3
CEF02N6A
cep6355
FQPF8N60C equivalent
CEF04N6 equivalent
CEP63A3
CEP20N06
cep76139
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A12 diode
Abstract: MOSFET 500V 15A mosfet 500v 2A test circuits for Mosfet capacitance 500v 2A mosfet TSM4NB50 N-channel 500V mosfet
Text: TSM4NB50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 2.7 @ VGS =10V 3 General Description The TSM4NB50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
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TSM4NB50
O-251
O-252
TSM4NB50
A12 diode
MOSFET 500V 15A
mosfet 500v 2A
test circuits for Mosfet capacitance
500v 2A mosfet
N-channel 500V mosfet
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marking diode f11
Abstract: No abstract text available
Text: TSM5ND50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
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TSM5ND50
O-251
O-252
TSM5ND50
marking diode f11
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B11 marking code
Abstract: 1A 700V MOSFET mosfet 700V 2A
Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM2N70
O-220
O-251
O-252
TSM2N70
B11 marking code
1A 700V MOSFET
mosfet 700V 2A
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POWER MOSFET 4600
Abstract: 1A 700V MOSFET
Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM2N70
O-220
O-251
O-252
TSM2N70
POWER MOSFET 4600
1A 700V MOSFET
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