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    TO-262AA PACKAGE Search Results

    TO-262AA PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TO-262AA PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO-262AA Package Intersil 3 LEAD JEDEC TO-262AA PLASTIC PACKAGE Original PDF

    TO-262AA PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H12E

    Abstract: TO262AA
    Text: Power Packages TO-262AA 3 LEAD JEDEC TO-262AA PLASTIC PACKAGE E INCHES A 15o A1 H1 TERM. 4 D L1 b1 MIN MAX MIN MAX c A 0.170 0.180 4.32 4.57 - 0.048 0.052 1.22 1.32 3, 4 b 0.030 0.034 0.77 0.86 3, 4 b1 0.045 0.055 1.15 1.39 3, 4 c 0.018 0.022 0.46 0.55 3, 4


    Original     		PDF O-262AA O-262AA H12E TO262AA

    TO262AA

    Abstract: No abstract text available
    Text: Power Packages TO-262AA 3 LEAD JEDEC TO-262AA PLASTIC PACKAGE fq E INCHES A 15o A1 H1 TERM. 4 D L1 b1 SYMBOL c 1 2 3 e J1 e1 35 MAX NOTES 0.170 0.180 4.32 4.57 - 0.048 0.052 1.22 1.32 3, 4 b 0.030 0.034 0.77 0.86 3, 4 b1 0.045 0.055 1.15 1.39 3, 4 c 0.018


    Original     		PDF O-262AA O-262AA TO262AA

    Untitled

    Abstract: No abstract text available
    Text: Power Packages TO-262AA 3 LEAD JEDEC TO-262AA PLASTIC PACKAGE E A 15o A1 H1 TERM. 4 D L1 b1 c b L 60o 1 2 e e1 3 J1 INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.170 0.180 4.32 4.57 0.048 0.052 1.22 1.32 3, 4 A1 b 0.030 0.034 0.77 0.86 3, 4 0.045 0.055


    Original     		PDF O-262AA O-262AA

    Untitled

    Abstract: No abstract text available
    Text: VS-20CTQ.SPbF, VS-20CTQ.-1PbF Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A TO-263AB D2PAK FEATURES TO-262AA • 175 °C TJ operation • Center tap TO-220 package • Low forward voltage drop • High frequency operation


    Original     		PDF VS-20CTQ. O-263AB O-262AA O-220 J-STD-020, AEC-Q101 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: VS-MBRB20.CTHM3, VS-MBR20.CT-1HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A TO-263AB D2PAK FEATURES TO-262AA • 150 °C TJ operation • Low forward voltage drop • High frequency operation • Center tap D2PAK and TO-262 packages


    Original     		PDF VS-MBRB20. VS-MBR20. O-263AB O-262AA O-262 J-STD-020, VS-MBR20 AEC-Q101 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: VS-30CTQ.SPbF, VS-30CTQ.-1PbF Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A FEATURES TO-263AB D2PAK TO-262AA • 175 °C TJ operation • Center tap TO-220 package • Very low forward voltage drop • High frequency operation


    Original     		PDF VS-30CTQ. O-263AB O-262AA O-220 J-STD-020, VS-10CTQ. AEC-Q101 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: VS-40CTQ150S-M3, VS-40CTQ150-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A TO-263AB D2PAK FEATURES TO-262AA • Very low forward voltage drop • 175 °C TJ operation • Center tap TO-220 package • High frequency operation


    Original     		PDF VS-40CTQ150S-M3, VS-40CTQ150-1-M3 O-263AB O-262AA O-220 VS-40CTQ150S-M3 J-STD-020, 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: VT2080C, VIT2080C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF VT2080C, VIT2080C O-220AB O-262AA 22-B106 AEC-Q101 VT2080C 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: VS-15ETX06SPbF, VS-15ETX06-1PbF www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt TO-263AB D2PAK FEATURES TO-262AA • Benchmark ultralow forward voltage drop • Hyperfast recovery time • Low leakage current • 175 °C operating junction temperature


    Original     		PDF VS-15ETX06SPbF, VS-15ETX06-1PbF O-263AB O-262AA J-STD-020, AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: VS-40CTQ045SPbF, VS-40CTQ045-1PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A TO-263AB D2PAK FEATURES TO-262AA • 150 °C TJ operation • Center tap configuration • Very low forward voltage drop • High frequency operation


    Original     		PDF VS-40CTQ045SPbF, VS-40CTQ045-1PbF O-263AB O-262AA VS-40CTQ045SPbF J-STD-020, AEC-Q101 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: VS-20CTQ150SHM3, VS-20CTQ150-1HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A TO-263AB D2PAK FEATURES TO-262AA • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High frequency operation


    Original     		PDF VS-20CTQ150SHM3, VS-20CTQ150-1HM3 O-263AB O-262AA VS-20CTQ150SHM3 J-STD-020, AEC-Q101 JESD-201 2002/95/EC.

    M3045

    Abstract: JESD22-B102D J-STD-002B M3045S
    Text: New Product M3035S, M3045S, MI3035S & MI3045S Vishay General Semiconductor Schottky Barrier Rectifier TO-220AB TO-262AA K 2 3 1 1 M30xxS 2 3 FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop


    Original     		PDF M3035S, M3045S, MI3035S MI3045S O-220AB O-262AA M30xxS 2002/95/EC 2002/96/EC MI30xxS M3045 JESD22-B102D J-STD-002B M3045S

    Untitled

    Abstract: No abstract text available
    Text: VT4060C, VIT4060C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF VT4060C, VIT4060C O-220AB O-262AA 22-B106 AEC-Q101 VT4060C 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: VT1080C, VIT1080C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF VT1080C, VIT1080C O-220AB O-262AA 22-B106 AEC-Q101 VT1080C 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: MI2050C, MI2060C www.vishay.com Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency TO-262AA • Low forward voltage drop K • High forward surge capability


    Original     		PDF MI2050C, MI2060C O-262AA 22-B106 MI20xxC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    0570 diode

    Abstract: No abstract text available
    Text: New Product MI2050C & MI2060C Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection TO-262AA • Lower power losses, high efficiency K • Low forward voltage drop • High forward surge capability


    Original     		PDF MI2050C MI2060C O-262AA 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102 08-Apr-05 0570 diode

    Untitled

    Abstract: No abstract text available
    Text: New Product MI2050C & MI2060C Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection TO-262AA • Lower power losses, high efficiency K • Low forward voltage drop • High forward surge capability


    Original     		PDF MI2050C MI2060C O-262AA MI20xxC 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    JESD22-B102D

    Abstract: J-STD-002B
    Text: MI2050C & MI2060C New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection TO-262AA • Lower power losses, high efficiency K • Low forward voltage drop • High forward surge capability


    Original     		PDF MI2050C MI2060C O-262AA MI20xxC 2002/95/EC 2002/96/EC 08-Apr-05 JESD22-B102D J-STD-002B

    Untitled

    Abstract: No abstract text available
    Text: VS-20CTQ150SPbF, VS-20CTQ150-1PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A TO-263AB D2PAK FEATURES TO-262AA • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High frequency operation


    Original     		PDF VS-20CTQ150SPbF, VS-20CTQ150-1PbF O-263AB O-262AA VS-20CTQ150SPbF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: VS-42CTQ030SPbF, VS-42CTQ030-1PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A TO-263AB D2PAK FEATURES TO-262AA • 150 °C TJ operation • Center tap configuration • Very low forward voltage drop Base common cathode


    Original     		PDF VS-42CTQ030SPbF, VS-42CTQ030-1PbF O-263AB O-262AA VS-42CTQ030SPbF J-STD-020, AEC-Q101 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: VS-32CTQ.SPbF, VS-32CTQ.-1PbF Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A TO-263AB D2PAK FEATURES TO-262AA • 150 °C TJ operation • Low forward voltage drop • High frequency operation Base common cathode


    Original     		PDF VS-32CTQ. O-263AB O-262AA J-STD-020, AEC-Q101 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: VT30L60C, VIT30L60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF VT30L60C, VIT30L60C O-220AB O-262AA 22-B106 AEC-Q101 VT30L60C 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: VS-15ETH06SPbF, VS-15ETH06-1PbF www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt TO-263AB D2PAK FEATURES TO-262AA • Hyperfast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature


    Original     		PDF VS-15ETH06SPbF, VS-15ETH06-1PbF O-263AB O-262AA J-STD-020, AEC-Q101 VS-15ETH06SPbF 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: VT3080C, VIT3080C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF VT3080C, VIT3080C O-220AB O-262AA 22-B106 AEC-Q101 VT3080C 2002/95/EC. 2002/95/EC