CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223
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O-251/TO-252
O-220/TO-263
OT-23
OT-223
OT-89
2928-8J
O-220FM
CEP50N06
CEP83A3 equivalent
cep83a3
CEF02N6A
cep6355
FQPF8N60C equivalent
CEF04N6 equivalent
CEP63A3
CEP20N06
cep76139
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tsop 338
Abstract: No abstract text available
Text: Assembly Base List PACKAGE TSSOP-8 SOD-323 SOT-323 SOT-23 SC-59 SOT-89 SIP-3 SIP-4 SOT-25 SOT-26 TSOP-5 TSOP-6 SOT-28 SOT-223 SOP-5/7/8/10 SOP-8Expose SSOP-14 PL-4/S-4 TO-92 P-DIP-8 P-DIP-14/16 MSOP-8 MSOP-10 TO-220/262/263-3/5 TO-251/252 TO-220/263-3 TO-251/252
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OD-323
OT-323
OT-23
SC-59)
OT-89
OT-25
OT-26
OT-28
OT-223
OP-5/7/8/10
tsop 338
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220N04T2
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V
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IXTA220N04T2-7
O-263
220N04T2
3-06-08-A
4-24-08-C
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220N04
Abstract: No abstract text available
Text: Preliminary Technical Information Trench T2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40
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IXTA220N04T2-7
O-263
062in.
220N04T2
3-06-08-A
220N04
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFA230N075T2-7 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (7-lead) Symbol Test Conditions VDSS TJ = 25°C to 175°C
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IXFA230N075T2-7
O-263
230N075T2
2-26-10-C
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T230N
Abstract: IXFA230N075T2 IXFA230N075T2-7
Text: Advance Technical Information IXFA230N075T2-7 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (7-lead) Symbol Test Conditions VDSS TJ = 25°C to 175°C
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IXFA230N075T2-7
O-263
230N075T2
2-26-10-C
T230N
IXFA230N075T2
IXFA230N075T2-7
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information Trench T2TM Power MOSFET IXTA220N04T27 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V
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IXTA220N04T27
O-263
220N04T2
3-06-08-A
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220N04
Abstract: No abstract text available
Text: TrenchT2TM Power MOSFET VDSS ID25 IXTA220N04T2-7 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V
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IXTA220N04T2-7
O-263
062conds
220N04T2
4-24-08-C
220N04
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Untitled
Abstract: No abstract text available
Text: TrenchMVTM Power MOSFET VDSS ID25 IXTA130N10T7 = 100V = 130A Ω ≤ 9.1mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA130N10T7
O-263
062in.
130N10T
9-08-A
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220N04T2
Abstract: No abstract text available
Text: TrenchT2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V
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IXTA220N04T2-7
O-263
062in.
220N04T2
4-24-08-C
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Untitled
Abstract: No abstract text available
Text: IXTA220N04T2-7 TrenchT2TM Power MOSFET VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) 1 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40
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IXTA220N04T2-7
O-263
062in.
220N04T2
5-12-10-E
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IXTA130N10T7
Abstract: 130N10T Package to 263-7 s635
Text: TrenchMVTM Power MOSFET IXTA130N10T7 VDSS ID25 = 100V = 130A Ω ≤ 9.1mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA130N10T7
O-263
062in.
130N10T
9-08-A
IXTA130N10T7
Package to 263-7
s635
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA260N055T2-7 VDSS ID25 = 55V = 260A Ω ≤ 3.3mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA260N055T2-7
O-263
260N055T2
1-10-08-A
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IXTA300N04T2-7
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA300N04T2-7 VDSS ID25 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA300N04T2-7
O-263
062in.
300N04T2
1-10-08-A
IXTA300N04T2-7
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA230N075T2-7 VDSS ID25 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA230N075T2-7
O-263
230N075T2
1-10-08-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA200N055T2-7 VDSS ID25 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA200N055T2-7
O-263
200N055T2
3-06-08-B
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET VDSS ID25 IXTA300N04T2-7 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA300N04T2-7
O-263
300N04T2
1-10-08-A
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IXTA260N055T2-7
Abstract: 260N055T2
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA260N055T2-7 VDSS ID25 = 55V = 260A Ω ≤ 3.3mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA260N055T2-7
O-263
062in.
260N055T2
1-10-08-A
IXTA260N055T2-7
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IXTA200N055T2-7
Abstract: IXTA200N055T2 200N055
Text: Preliminary Technical Information IXTA200N055T2-7 TrenchT2TM Power MOSFET VDSS ID25 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA200N055T2-7
O-263
200N055T2
3-06-08-B
IXTA200N055T2-7
IXTA200N055T2
200N055
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0805YC103KAT2A
Abstract: 0805ZC105KAT2A 1210ZC106KAT2A LP38853 LP38853S-ADJ an-1504 national
Text: CFF = 1 / 2 x π x FZ x R1 Introduction This board is designed to allow the evaluation of the LP38853S-ADJ Voltage Regulator. Each board is assembled and tested in the factory. This evaluation board has the TO-263 7-lead package mounted, and the output voltage is
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LP38853S-ADJ
O-263
LP38853-ADJ
LP38853
AN-1504
0805YC103KAT2A
0805ZC105KAT2A
1210ZC106KAT2A
an-1504 national
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TS7B
Abstract: No abstract text available
Text: 7 Lead Molded TO-263 NS Package Number TS7B All dimensions are in inches millimeters LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
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O-263
TS7B
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Untitled
Abstract: No abstract text available
Text: User's Guide SNVA178C – November 2006 – Revised April 2013 AN-1504 LP38853S-ADJ Evaluation Board 1 Introduction This board is designed to allow the evaluation of the LP38853S-ADJ Voltage Regulator. Each board is assembled and tested in the factory. This evaluation board has the TO-263 7-lead package mounted, and
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SNVA178C
AN-1504
LP38853S-ADJ
O-263
LP38853
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Untitled
Abstract: No abstract text available
Text: C S-263 SILICON MONOLITHIC LINEAR AMPLIFIER Low Level See S tandard P ackage C o n fig u ra tio n S ketch No. 7 (TO -72 Metal C an) on pages 4 & 5. DESCRIPTION The CS-263 is a s ilic o n m o n o lith ic in te g ra te d c irc u it a m p lifie r in a TO -72 package.
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CS-263
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14MQ
Abstract: P7060
Text: CEP7060L/CEB7060L March 1998 N-Channel Logic Level Enhancement Mode Field Effect FEATURES • 6 0 V , 7 5 A , R ds on =14 itiQ @ V g s =5V. • Super high dense cell design for extremely low Rds(on>. • High power and current handling capability. • TO-220 & TO-263 package.
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CEP7060L/CEB7060L
O-220
O-263
to-263
to-220
P7060L/C
B7060L
14MQ
P7060
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