TO-39 CASE TO AMBIENT Search Results

TO-39 CASE TO AMBIENT Result Highlights (5)

Part	Manufacturer	Description	Download
CS-DSDMDB09MF-010	Amphenol Cables on Demand	Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft	Datasheet
CS-DSDMDB15MF-002.5	Amphenol Cables on Demand	Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft	Datasheet
CS-DSDMDB15MM-025	Amphenol Cables on Demand	Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft	Datasheet
CS-DSDMDB25MM-010	Amphenol Cables on Demand	Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft	Datasheet
CS-DSDMDB37MM-002.5	Amphenol Cables on Demand	Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft	Datasheet

TO-39 CASE TO AMBIENT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RD5.1J Abstract: zener rd9.1esb2 RD6.8ES-T1-AZ(AB2) Text: RD4.7JS-RD39JS Silicon Zener Diodes VZ : 4.7 - 39 Volts PD : 400 mW DO - 34 Glass Features Complete 4.7 to 39 Volts High peak reverse power dissipation High reliability Low leakage current Pb / RoHS Free Mechanical Data Case: DO-34 Glass Case	Original	7JS-RD39JS DO-34 RD16JS RD18JS RD20JS RD22JS RD24JS RD27JS RD30JS RD33JS RD5.1J zener rd9.1esb2 RD6.8ES-T1-AZ(AB2)	PDF
RD22E Abstract: RD13E RD2.4E rd24e Text: RD2.0E-RD39E Silicon Zener Diodes VZ : 2.0 - 39 Volts PD : 500 mW DO - 35 GLASS Features Complete 2.0 to 39 Volts High peak reverse power dissipation High reliability Low leakage current Pb / RoHS Free Mechanical Data Case: DO-35 Glass Case	Original	0E-RD39E DO-35 RD27E RD30E RD33E RD36E RD39E RD22E RD13E RD2.4E rd24e	PDF
TO-39, UVC Abstract: uvc photodiode photodiode 011 Text: Photodiode EPD-270-0-0.3-2 11.04.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-C clear UV-glass + filter SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVC range 230 nm - 285 nm , mounted in hermetically sealed TO-39 package with clear	Original	EPD-270-0-0 D-12555 TO-39, UVC uvc photodiode photodiode 011	PDF
UVA photodiode Abstract: 4W-08 EPD360 Text: Photodiode EPD-360-0-0.3-1 10.05.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-A clear UV-glass + filter SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVA range 330 nm - 400 nm , mounted in hermetically sealed TO-39 package with clear	Original	EPD-360-0-0 D-12555 UVA photodiode 4W-08 EPD360	PDF
EPD-310-0-0 Abstract: UV 310 nm Text: Photodiode EPD-310-0-0.3-1 11.04.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-B clear UV-glass + filters SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVB range 290 nm - 330 nm , mounted in hermetically sealed TO-39 package with clear	Original	EPD-310-0-0 D-12555 UV 310 nm	PDF
Untitled Abstract: No abstract text available Text: SCOPE: HIGH PRECISION +10 VOLT REFERENCE Device Type 01 02 Generic Number MX581S x /883B MX581T(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter H Mil-Std-1835 Case Outline MACY1-X3 3 Lead TO-39 Can	Original	MX581S /883B MX581T /883B Mil-Std-1835 Mil-Std-883: Mil-Std-883. Mil-Std-883 MX581S/T/883B	PDF
2N5322 Abstract: 2N5323 Text: PNP 2N5322 – 2N5323 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N5322 and 2N5323 are PNP transistors mounted in TO-39 metal case . They are especially intended for high-voltage medium power applications in industrial and commercial equipements. Compliance to RoHS	Original	2N5322 2N5323 2N5322 2N5323	PDF
2N5320 Abstract: 2N5321 Text: NPN 2N5320 – 2N5321 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N5320 and 2N5321 are NPN transistors mounted in TO-39 metal case . They are especially intended for high-voltage medium power applications in industrial and commercial equipements. Compliance to RoHS	Original	2N5320 2N5321 2N5320 2N5321	PDF
2n2905 Abstract: 2N2905A 2N2905 equivalent transistor 2N2905 2N2905 transistor 2N2905a equivalent ST 2N2905 of 2n2905 PNP 2N2905 Text: PNP 2N2905 – 2N2905A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2905 and 2N2905A are PNP transistors mounted in TO-39 metal case . They are intended for high speed switching and general purpose applications. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol	Original	2N2905 2N2905A 2N2905 2N2905A 2N2905 equivalent transistor 2N2905 2N2905 transistor 2N2905a equivalent ST 2N2905 of 2n2905 PNP 2N2905	PDF
Untitled Abstract: No abstract text available Text: ^£.mi- 2onductoi , Una. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BCX23 BCX39 BCX 23 and BOX 39 are epitaxial PNP silicon planar transistors in TO 18 metal case (18 A 3 DIN 41876). The collector is electrically connected to the case. These transistors	Original	BCX23 BCX39	PDF
mm5416 Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 772 283-4500 FAX: (772)286-8914 Website: http://www.semi-tech-inc.com Email: data1@semi-tech-inc.com TYPE: MM5416 CASE OUTLINE: TO-205AD (TO-39) PNP SILICON TRANSISTOR	Original	MM5416 O-205AD mm5416	PDF
zener 7.5 B 49 sot 323 Abstract: MMBZ5238BW Text: MMBZ52xBW Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 39 Volts POWER DISSIPATION – 0.2 Watts FEATURES SOT-323 • Planar die construction • 200mW power dissipation rating SOT-323 Dim. MECHANICAL DATA • Case: SOT-323 Plastic • Case Material: “Green” molding compound, UL	Original	MMBZ52xBW OT-323 OT-323 200mW J-STD-020D 2002/95/EC May-2009, KSJR10 zener 7.5 B 49 sot 323 MMBZ5238BW	PDF
AFY18 Abstract: AFY18E AFY18D germanium mesa transistor pnp Germanium Transistor afy1 Text: AFY18 PNP Mesa transistor for antenna amplifiers up to 250 MHz The AFY18 is a germanium PNP RF epitaxial mesa transistor in a case 5 C3 DIN 41 873 TO -39 . The collector is electrically connected to the case. The A F Y 18 is designed for antenna amplifiers up to 250 MHz.	OCR Scan	AFY18 AFY18 Q60106-Y18- AFY18E AFY18D germanium mesa transistor pnp Germanium Transistor afy1	PDF
AFY11 Abstract: germanium mesa transistor pnp Germanium Transistor Germanium mesa Text: AFY11 Not for new developm ent PNP Mesa transistor for RF-application The AFY11 is a germanium PNP-RF mesa transistor in a case 5 C 3 DIN 41 873 TO-39 . The collector is electrically connected to the case. AFY11 is designed for universal RF-applications up to about 300 MHz.	OCR Scan	AFY11 AFY11 Q60106 100MHz; germanium mesa transistor pnp Germanium Transistor Germanium mesa	PDF

TRANSISTOR BC 157 Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor Text: 2SC D • û23SbOS 0004100 T_«SIE<S^ PNP Silicon Transistors SIEMENS . AKTIENGESELLSCHAF B c160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as	OCR Scan	23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor	PDF
Untitled Abstract: No abstract text available Text: im itti • IP120MA SERIES IP120M SERIES IP79M00A SERIES IP79M00 SERIES A M I AR 0.5 AMP NEGATIVE VOLTAGE REGULATOR □ 0 FEATURES Pin 1 - Ground Pin 2 - V qut Case - V\|N Pin 1 - Ground Pin 2 - VIN • OUTPUT CURRENT UP TO 0.5A Case - V qut H Package - TO-39	OCR Scan	IP120MA IP120M IP79M00A IP79M00 T0-220SM	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE b'lE ]> □ □27'UT 5b7 • APX bbS3T31 BSX45 to 47 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.	OCR Scan	bbS3T31 BSX45 BSX45 BSX46 BSX47 BSX46â	PDF
transistor BC 153 Abstract: TRANSISTOR BC 141 BCY41 BC transistor series transistor BC SERIES TRANSISTOR BC140 transistor BC 310 bc 103 transistor transistor bc 103 transistor C719 Text: ESC D • fl23SbQS 0004104 2 « S I E G . NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF 3c 140 BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case 5 C 3 OIN 41873 . The collector is electrically connected to the case. The transistors are intended for use in AF	OCR Scan	23SbQS 0Q04104 BC1401> Q60203-X140 Q60203-X140-V6 Q60203-X140-V10 Q60203-X140-V16 Q60203-X140-P 140/BC160 Q62702-C228-S2 transistor BC 153 TRANSISTOR BC 141 BCY41 BC transistor series transistor BC SERIES TRANSISTOR BC140 transistor BC 310 bc 103 transistor transistor bc 103 transistor C719	PDF
Y2923 Abstract: 2sc 965 transistor b0961 Q62702-S154 lfe10 Text: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4033 is an epitaxial PNP silicon planar transistor in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistor is particularly intended for	OCR Scan	023SbOS Q62702-S154 fl235b05 Y2923 2sc 965 transistor b0961 Q62702-S154 lfe10	PDF
transistor BC 153 Abstract: transistor C719 TRANSISTOR C236 TRANSISTOR BC 141 transistor BC SERIES TRANSISTOR BC 140 transistor BC 153 a TRANSISTOR BC140 c236 transistor BC transistor series Text: ESC » m ö23SbQS 0Q043.04 2 « S I E G , NPN Silicon Transistors SIEMENS AKTIENGESELLSCHÂF 3c 140 BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case 5 C 3 OIN 41873 . The collector is electrically connected to the case. The transistors are intended for use in AF	OCR Scan	23SbQS 0Q043 60203-X 60203-X140-V6 60203-X140-P 140/BC160 62702-C228-S2 62702-C719 transistor BC 153 transistor C719 TRANSISTOR C236 TRANSISTOR BC 141 transistor BC SERIES TRANSISTOR BC 140 transistor BC 153 a TRANSISTOR BC140 c236 transistor BC transistor series	PDF
Transistor BSX 63-10 Abstract: Transistor BSX 62-16 TA820 Q60218-X62 Q60218-X62-B Q60218-X62-C Q60218-X62-D Q60218-X63 Q60218-X63-B Bsx62 Text: ESC D • 023Sb05 000401=1 T m S I Z G { -r-Z?-'7 NPN Silicon Planar Transistors BSX 62 BSX 63 - - SIEMENS AKTIENÛESELLSCHAF - BSX 62 and BSX 63 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are particularly	OCR Scan	23Sb05 Q60218-X62 Q60218-X62-B Q60218-X62-C Q60218-X62-D Q60218-X63 Q60218-X63-B 60218-X63-C 023SbQS Transistor BSX 63-10 Transistor BSX 62-16 TA820 Q60218-X62 Q60218-X62-B Q60218-X62-C Q60218-X62-D Q60218-X63 Q60218-X63-B Bsx62	PDF
transistor BC 157 Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10 Text: ESC D • û235bOS 0004100 T « S I E â ^ . .-r-M-âZ- PNP Silicon Transistors SIEMENS AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as	OCR Scan	BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10	PDF
Defense Electronics Supply Center Abstract: 5962-8998101X Text: REVISIONS LTR DATE DESCRIPTION APPROVED YR-HO-DA Change input to output voltage differential in 1.3, 1.4, VREE, 'Orline' an<* delta 1Ani conditions. Change I. test Tinits for conditions CVIN - Vol\|T> = 2.5 V from 0.05 A to 0.075 A. Add case outline Y (TO-39).	OCR Scan	5962-R054-94. MIL-BUL-103. MIL-BUL-103 00470a Defense Electronics Supply Center 5962-8998101X	PDF
Untitled Abstract: No abstract text available Text: l l N AMER PHILIPS/DISCRETE b^E • J> bbS3T31 002767b 3 m I IAPX BSV15 to 17 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.	OCR Scan	bbS3T31 002767b BSV15 BSV15 BSV16 BSV17 bbS3S31	PDF

Privacy Settings

TO-39 CASE TO AMBIENT Search Results

TO-39 CASE TO AMBIENT Result Highlights (5)

TO-39 CASE TO AMBIENT Datasheets Context Search

RD5.1J

RD22E

TO-39, UVC

UVA photodiode

EPD-310-0-0

Untitled

2N5322

2N5320

2n2905

Untitled

mm5416

zener 7.5 B 49 sot 323

AFY18

AFY11

TRANSISTOR BC 157

Untitled

Untitled

transistor BC 153

Y2923

transistor BC 153

Transistor BSX 63-10

transistor BC 157

Defense Electronics Supply Center

Untitled