SB01
Abstract: SB05 SB20 SB30 SB40 SB02W03S S09A S02 sanyo
Text: Schottky Barrier Diodes Shortform Table Lead Type Package Series CONTENTS •Packages ■Quick selection guide ■Recommendation circuit diagram ■Lineup according to packages ・TP ・SPA ・NP ・MP ・NMP ・TO-126 ・FLP 2 3 4 5 6 7 7 8 9 10 Mar.2008
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O-126
O-126ML
SB30-03Z
SB20-05Z
SB30W03Z
SB01
SB05
SB20
SB30
SB40
SB02W03S
S09A
S02 sanyo
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TRANSISTOR D882
Abstract: transistor D882 datasheet D882 SPECIFICATION D882 TRANSISTOR PIN D882 d882 npn transistor h D882 D882 TRANSISTOR d882 equivalent marking d882
Text: CYStech Electronics Corp. Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics
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C848D3-H
BTD882D3
200mA
BTB772D3
O-126ML
UL94V-0
TRANSISTOR D882
transistor D882 datasheet
D882 SPECIFICATION
D882 TRANSISTOR PIN
D882
d882 npn transistor
h D882
D882 TRANSISTOR
d882 equivalent
marking d882
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C5201 transistor
Abstract: c5201 Marking 8A 737 TRANSISTOR Transistor C5201 k 1457 BTC5201D3
Text: Spec. No. : C653D3 Issued Date : 2003.10.03 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTC5201D3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics Symbol Outline TO-126ML
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C653D3
BTC5201D3
O-126ML
UL94V-0
C5201 transistor
c5201
Marking 8A 737 TRANSISTOR
Transistor C5201
k 1457
BTC5201D3
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EN3643
Abstract: 2SA1749
Text: Ordering number:EN3643 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1749/2SC4564 High-Definition CRT Display Video Output Applications Features Package Dimensions • High fT : fT=400MHz typ . · High breakdown voltage : VCEO≥200V min. · High current.
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EN3643
2SA1749/2SC4564
400MHz
VCEO200V
2SA1749
2SC4564
2SA1749/2SC4564]
2SA1749
O-126ML
EN3643
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B1143
Abstract: transistor D1683 2sb1143 D1683 TRANSISTOR MARKING NK 2SB1143S 2SD1642 2SD1683 EN2063C 7516a
Text: 2SB1143/2SD1683 Ordering number : EN2063C SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SB1143/2SD1683 50V/4A Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features
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EN2063C
2SB1143/2SD1683
2SB1143
B1143
transistor D1683
2sb1143
D1683
TRANSISTOR MARKING NK
2SB1143S
2SD1642
2SD1683
EN2063C
7516a
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TL 188 TRANSISTOR PNP
Abstract: HTIP117D
Text: HI-SINCERITY Spec. No. : HD200204 Issued Date : 2002.04.01 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HTIP117D PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126ML The HTIP117D is designed for use in general purpose amplifier and low-speed
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HD200204
HTIP117D
O-126ML
HTIP117D
183oC
217oC
260oC
TL 188 TRANSISTOR PNP
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d1857a
Abstract: D1857 BTB12 BTD1857AD3
Text: CYStech Electronics Corp. Spec. No. : C855D3 Issued Date : 2004.09.21 Revised Date :2005.04.20 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AD3 Description • High BVCEO • High current capability • Complementary to BTB1236AD3 • Pb-free package
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C855D3
BTD1857AD3
BTB1236AD3
O-126ML
UL94V-0
d1857a
D1857
BTB12
BTD1857AD3
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H11-44
Abstract: No abstract text available
Text: PN P S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1144 █ APPLICATIONS Medium frequency power amplifier，Medium Seed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃
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H1144
O-126ML
-120V
-100V
-100V,
-100mA
-500mA,
-50mA
H11-44
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hb123d
Abstract: No abstract text available
Text: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HB123D █ APPLICATIONS Power Amplifie █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃
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HB123D
O-126ML
300mA
500mA
100mA,
hb123d
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Untitled
Abstract: No abstract text available
Text: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HM13002 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML
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HM13002
O-126ML
500mA
100mA
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transistor 649A
Abstract: H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A
Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 649A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A117AJ-00 芯片厚度：240±20µm 管芯尺寸：1170x1170µm 2 焊位尺寸：B 极 272×192µm 2；E 极 226×298µm 2
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100mm
A117AJ-00
2SB649AHS649AH649A
O-126TO-126ML
-180V
-160V
transistor 649A
H649A
649a
HS649A
H649
transistor 160v 1.5a pnp
2SB649A
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Untitled
Abstract: No abstract text available
Text: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2682 █ APPLICATIONS . Audio Power Amplifie. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃
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H2682
O-126ML
10AIC
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transistor 772
Abstract: 772 transistor H772 2SB772HS772H772 H*772 2SB772 HS772
Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 772 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A100AJ-00 芯片厚度：240±20µm 管芯尺寸：1000x1000µm 2 焊位尺寸：B 极 215×215µm 2；E 极 210×210µm 2
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100mm
A100AJ-00
2SB772HS772H772
O-126TO-126ML
-10VIE
transistor 772
772 transistor
H772
2SB772HS772H772
H*772
2SB772
HS772
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B1143
Abstract: transistor D1683 2SD 1143 2SB1143S
Text: Ordering number : EN2063C 2SB1143/2SD1683 Bipolar Transistor http://onsemi.com – 50V, (–)4A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes
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EN2063C
2SB1143/2SD1683
O-126ML
2SB1143
B1143
transistor D1683
2SD 1143
2SB1143S
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2SA1536
Abstract: 2SC3951 ITR03875 ITR03876
Text: Ordering number:ENN2435B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1536/2SC3951 High-Definition CRT Display Video Output Applications Applications Package Dimensions • High definition CRT display video output, wide-band amplifier. unit:mm 2042B [2SA1536/2SC3951]
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ENN2435B
2SA1536/2SC3951
2042B
2SA1536/2SC3951]
600MHz.
70Vmin.
2SA1536
2SA1536
2SC3951
ITR03875
ITR03876
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2SK3449
Abstract: No abstract text available
Text: Ordering number : ENN6672 2SK3449 N-Channel Silicon MOSFET 2SK3449 DC / DC Converter Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2190 [2SK3449] 8.0 3.3 1.5 7.5 3.0 11.0 1.4 4.0 1.0
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ENN6672
2SK3449
2SK3449]
O-126ML
2SK3449
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IC 7667
Abstract: 2SC5951
Text: Ordering number : ENN7667 2SC5951 NPN Triple Diffused Planar Silicon Transistor 2SC5951 Switching Regulator Applications Features • • High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. unit : mm 2042B [2SC5951] 8.0 4.0 1.0
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ENN7667
2SC5951
2042B
2SC5951]
O-126ML
IC 7667
2SC5951
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lb123d
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. LB123D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications. TO-126ML Pinning .163 4.12 .153(3.87) 1 = Emitter
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LB123D
O-126ML
lb123d
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2042A
Abstract: 2SA1537
Text: Ordering number:EN2436B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1537/2SC3952 High-Definition CRT Display Video Output Applications Applications Package Dimensions • High-definition CRT display video output, wide-band amplifier. unit:mm 2042A [2SA1537/2SC3952]
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EN2436B
2SA1537/2SC3952
2SA1537/2SC3952]
700MHz.
70Vmin.
2SA1537
O-126ML
2042A
2SA1537
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c3807
Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
Text: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4
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K2270
A1765
A1497/C3860,
A1503/C3864
A1509/C3899,
A1511/C3901
A1572/
A1574/C4070
A1582/C4113,
A1590/C4121
c3807
C3898
k443
d16810
K545
K1311
b1127
C4146
K2073
B986
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TO-126LP
Abstract: No abstract text available
Text: Precautions when handling transistors 1. Lead forming and cutting Sanyo transistor products are available in a range of lead configurations and lengths. As required, however, you can form or cut package leads to meet the needs of specific applications. As a general precaution, you should always handle
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2SA1833
Abstract: 2SA1842 2SC4614 2SA1770 2SA1812 2SA1772 2SA1773 2SA1775 2SA1776 2SA1777
Text: 50 O V 2 5 U 2SA1770 Vc b o VcEO V (V) HV SW -180 !C C D C ) (A) *EPfàTc=25t;) Pc Pc* (W) (W) -160 -1.5 1 M ICBO (max) (*A) VcB (V) -1 -120 M (min) 1i ft (max) Vc e (V) 100 400 -5 (Ta=25°C) Ic / I e (A) [*EPÍátyp (max) (V) (V) ic (A) -0.1 -0.5 -1.2
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2SA1770
2SA1772
2SA1773
2SA1775
2SA1776
2SA1777
O-126MOD)
2SA1810
2SA1812
2SA1813
2SA1833
2SA1842
2SC4614
2SA1770
2SA1812
2SA1772
2SA1773
2SA1777
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Untitled
Abstract: No abstract text available
Text: How To Handle Transistors Although SAN YO makes all possible efforts to assure quality and reliability in its development and production of transistor products, transistor reliability depends not only on the inherent factors in the transistors but also on the
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SC3416
Abstract: tt2202 2SA1371 2SC3790 2SC4732 2SC5291 2SA1829 2SC2857 2SC4075 TD-220F
Text: SA$iYO Transistors for TV Display Video Output Us P c i t u r c s ^Excellent HP characteristic. * S m ll reverse tn n sfer capacitaac*. *C c«*lei*ntiry WP and NW type*. ♦ Adoption of MBIT, FB€T processes. ^Highly resistant to d ie le c tric breakdown.
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Ratinfs/Ta-25
Characteristics/Ta-25t:
2SC2857
2SA1689/2SC4449
2SC5291
L26Stt
Sfr-32)
O-126LP,
O-126
12ClP
SC3416
tt2202
2SA1371
2SC3790
2SC4732
2SA1829
2SC4075
TD-220F
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