tea1761
Abstract: heat sink to220 Silicon controller rectifier TEA1750 package to220 PSMN1R6-30PL PSMN5R0-80PS PSMN2R0-30PL PSMN7R6-60PS PSMN3R0-60PS
Text: New high-performance Trench 6 MOSFETs in a TO220 package for power management applications Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with new devices in the industry-standard TO220
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PSMN7R8-120PS N-channel 120V 7.9 mΩ standard level MOSFET in TO220 Previously named PSMN8R0-120PS 30 November 2012 Preliminary data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product
|
Original
|
PSMN7R8-120PS
PSMN8R0-120PS)
|
PDF
|
PSMN013-100PS
Abstract: No abstract text available
Text: TO -22 0A B PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. Rev. 3 — 29 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
|
Original
|
PSMN013-100PS
PSMN013-100PS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO -22 0A B PSMN027-100PS N-channel 100V 26.8 mΩ standard level MOSFET in TO220 Rev. 3 — 12 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
|
Original
|
PSMN027-100PS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO -22 0A B PSMN1R5-40PS N-channel 40 V 1.5 mΩ standard level MOSFET in TO220. Rev. 01 — 3 February 2011 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 SOT78 package qualified to 175 °C. This
|
Original
|
PSMN1R5-40PS
|
PDF
|
TO220 package
Abstract: PSMN4R3-30PL PSMN trench PSMN012-80PS PSMN050-80PS PSMN1R6-30PL PSMN2R0-30PL PSMN2R2-40PS PSMN4R4-80PS
Text: Ten new high-performance Trench 6 MOSFETs in a TO220 package for power supply and motion control Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with ten new devices in the industry-standard
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BDS20 BDS21 SEME LAB MECHANICAL DATA Dimensions in mm SILICON EPITAXIAL BASE COMPLEMENTARY DARLINGTON POWER TRANSISTORS IN TO220 PACKAGE 4.6 1 0.6 0.8 3.6 Dia. 1 0 .6 1 3 .5 16.5 BDS20SM BDS21SM 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC PACKAGES
|
Original
|
BDS20
BDS21
BDS20SM
BDS21SM
O220M
O220SM
|
PDF
|
175C
Abstract: No abstract text available
Text: TO -22 0A B PSMN4R3-80PS N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 Rev. 01 — 27 December 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
|
Original
|
PSMN4R3-80PS
175C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO -2 20A B PSMN1R5-40PS N-channel 40 V 1.6 mΩ standard level MOSFET in TO220 15 July 2013 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 TO220 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power
|
Original
|
PSMN1R5-40PS
|
PDF
|
PSMN013-100PS
Abstract: No abstract text available
Text: PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. 10 August 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and
|
Original
|
PSMN013-100PS
PSMN013-100PS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BDS13 BDS14 BDS15 SEME LAB MECHANICAL DATA Dimensions in mm SILICON PNP EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 0.8 3.6 Dia. 1 0 .6 1 3 .5 16.5 BDS13SM BDS14SM BDS15SM 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC
|
Original
|
BDS13
BDS14
BDS15
BDS13SM
BDS14SM
BDS15SM
O220M
O220SM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO -22 0A B PSMN017-80PS N-channel 80 V 17 mΩ standard level MOSFET in TO220 Rev. 3 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
|
Original
|
PSMN017-80PS
dissipati12
|
PDF
|
D566
Abstract: No abstract text available
Text: PSMN7R0-100PS N-channel 100V 6.8 mΩ standard level MOSFET in TO220. 30 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and
|
Original
|
PSMN7R0-100PS
D566
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO -2 20A B PSMN7R8-120PS N-channel 120V 7.9mΩ standard level MOSFET in TO220 25 January 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and power
|
Original
|
PSMN7R8-120PS
25gal
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: TO -2 20A B PSMN7R0-100PS N-channel 100V 6.8 mΩ standard level MOSFET in TO220. 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and
|
Original
|
PSMN7R0-100PS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BDS18 BDS18SMD BDS19 BDS19SMD MECHANICAL DATA Dimensions in mm SILICON PNP EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 3.6 Dia. 1 0 .6 1 3 .5 16.5 0.8 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC PACKAGES 1.0 2 .5 4
|
Original
|
BDS18
BDS18SMD
BDS19
BDS19SMD
O220M
|
PDF
|
6 pin power switching ic to220
Abstract: No abstract text available
Text: BDS10 BDS11 BDS12 SEME LAB MECHANICAL DATA Dimensions in mm SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 0.8 3.6 Dia. 1 0 .6 1 3 .5 16.5 BDS10SM BDS11SM BDS12SM 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC
|
Original
|
BDS10
BDS11
BDS12
BDS10SM
BDS11SM
BDS12SM
O220M
O220SM
6 pin power switching ic to220
|
PDF
|
PSMN2R8-40PS
Abstract: No abstract text available
Text: TO -2 20A B PSMN2R8-40PS N-channel TO220 40 V 2.8 mΩ standard level MOSFET 11 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and
|
Original
|
PSMN2R8-40PS
PSMN2R8-40PS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PSMN8R5-100PS N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and
|
Original
|
PSMN8R5-100PS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO -2 20A B PSMN4R8-100PSE N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package 11 July 2014 Product data sheet 1. General description Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of NXP's "NextPower Live" portfolio, the PSMN4R8-100PSE is robust enough to withstand
|
Original
|
PSMN4R8-100PSE
PSMN4R8-100PSE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO -2 20A B PSMN8R5-100PS N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and
|
Original
|
PSMN8R5-100PS
|
PDF
|
TO220 HEATSINK DATASHEET
Abstract: PSMN2R8-40PS
Text: PSMN2R8-40PS N-channel TO220 40 V 2.8 mΩ standard level MOSFET Rev. 01 — 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
|
Original
|
PSMN2R8-40PS
TO220 HEATSINK DATASHEET
PSMN2R8-40PS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PSMN017-80PS N-channel 80 V 17 mΩ standard level MOSFET in TO220 Rev. 02 — 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
|
Original
|
PSMN017-80PS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO -2 20A B PSMN7R8-100PSE N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package 11 August 2014 Product data sheet 1. General description Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of NXP's "NextPower Live" portfolio, the PSMN7R8-100PSE is robust enough to withstand
|
Original
|
PSMN7R8-100PSE
PSMN7R8-100PSE
|
PDF
|
