Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TO220 IC Search Results

    TO220 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    TO220 IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tea1761

    Abstract: heat sink to220 Silicon controller rectifier TEA1750 package to220 PSMN1R6-30PL PSMN5R0-80PS PSMN2R0-30PL PSMN7R6-60PS PSMN3R0-60PS
    Text: New high-performance Trench 6 MOSFETs in a TO220 package for power management applications Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with new devices in the industry-standard TO220


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PSMN7R8-120PS N-channel 120V 7.9 mΩ standard level MOSFET in TO220 Previously named PSMN8R0-120PS 30 November 2012 Preliminary data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product


    Original     		PDF PSMN7R8-120PS PSMN8R0-120PS)

    PSMN013-100PS

    Abstract: No abstract text available
    Text: TO -22 0A B PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. Rev. 3 — 29 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is


    Original     		PDF PSMN013-100PS PSMN013-100PS

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B PSMN027-100PS N-channel 100V 26.8 mΩ standard level MOSFET in TO220 Rev. 3 — 12 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is


    Original     		PDF PSMN027-100PS

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B PSMN1R5-40PS N-channel 40 V 1.5 mΩ standard level MOSFET in TO220. Rev. 01 — 3 February 2011 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 SOT78 package qualified to 175 °C. This


    Original     		PDF PSMN1R5-40PS

    TO220 package

    Abstract: PSMN4R3-30PL PSMN trench PSMN012-80PS PSMN050-80PS PSMN1R6-30PL PSMN2R0-30PL PSMN2R2-40PS PSMN4R4-80PS
    Text: Ten new high-performance Trench 6 MOSFETs in a TO220 package for power supply and motion control Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with ten new devices in the industry-standard


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: BDS20 BDS21 SEME LAB MECHANICAL DATA Dimensions in mm SILICON EPITAXIAL BASE COMPLEMENTARY DARLINGTON POWER TRANSISTORS IN TO220 PACKAGE 4.6 1 0.6 0.8 3.6 Dia. 1 0 .6 1 3 .5 16.5 BDS20SM BDS21SM 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC PACKAGES


    Original     		PDF BDS20 BDS21 BDS20SM BDS21SM O220M O220SM

    175C

    Abstract: No abstract text available
    Text: TO -22 0A B PSMN4R3-80PS N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 Rev. 01 — 27 December 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is


    Original     		PDF PSMN4R3-80PS 175C

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B PSMN1R5-40PS N-channel 40 V 1.6 mΩ standard level MOSFET in TO220 15 July 2013 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 TO220 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power


    Original     		PDF PSMN1R5-40PS

    PSMN013-100PS

    Abstract: No abstract text available
    Text: PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. 10 August 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and


    Original     		PDF PSMN013-100PS PSMN013-100PS

    Untitled

    Abstract: No abstract text available
    Text: BDS13 BDS14 BDS15 SEME LAB MECHANICAL DATA Dimensions in mm SILICON PNP EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 0.8 3.6 Dia. 1 0 .6 1 3 .5 16.5 BDS13SM BDS14SM BDS15SM 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC


    Original     		PDF BDS13 BDS14 BDS15 BDS13SM BDS14SM BDS15SM O220M O220SM

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B PSMN017-80PS N-channel 80 V 17 mΩ standard level MOSFET in TO220 Rev. 3 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is


    Original     		PDF PSMN017-80PS dissipati12

    D566

    Abstract: No abstract text available
    Text: PSMN7R0-100PS N-channel 100V 6.8 mΩ standard level MOSFET in TO220. 30 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and


    Original     		PDF PSMN7R0-100PS D566

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B PSMN7R8-120PS N-channel 120V 7.9mΩ standard level MOSFET in TO220 25 January 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and power


    Original     		PDF PSMN7R8-120PS 25gal

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B PSMN7R0-100PS N-channel 100V 6.8 mΩ standard level MOSFET in TO220. 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and


    Original     		PDF PSMN7R0-100PS

    Untitled

    Abstract: No abstract text available
    Text: BDS18 BDS18SMD BDS19 BDS19SMD MECHANICAL DATA Dimensions in mm SILICON PNP EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 3.6 Dia. 1 0 .6 1 3 .5 16.5 0.8 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC PACKAGES 1.0 2 .5 4


    Original     		PDF BDS18 BDS18SMD BDS19 BDS19SMD O220M

    6 pin power switching ic to220

    Abstract: No abstract text available
    Text: BDS10 BDS11 BDS12 SEME LAB MECHANICAL DATA Dimensions in mm SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 0.8 3.6 Dia. 1 0 .6 1 3 .5 16.5 BDS10SM BDS11SM BDS12SM 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC


    Original     		PDF BDS10 BDS11 BDS12 BDS10SM BDS11SM BDS12SM O220M O220SM 6 pin power switching ic to220

    PSMN2R8-40PS

    Abstract: No abstract text available
    Text: TO -2 20A B PSMN2R8-40PS N-channel TO220 40 V 2.8 mΩ standard level MOSFET 11 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and


    Original     		PDF PSMN2R8-40PS PSMN2R8-40PS

    Untitled

    Abstract: No abstract text available
    Text: PSMN8R5-100PS N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and


    Original     		PDF PSMN8R5-100PS

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B PSMN4R8-100PSE N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package 11 July 2014 Product data sheet 1. General description Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of NXP's "NextPower Live" portfolio, the PSMN4R8-100PSE is robust enough to withstand


    Original     		PDF PSMN4R8-100PSE PSMN4R8-100PSE

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B PSMN8R5-100PS N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and


    Original     		PDF PSMN8R5-100PS

    TO220 HEATSINK DATASHEET

    Abstract: PSMN2R8-40PS
    Text: PSMN2R8-40PS N-channel TO220 40 V 2.8 mΩ standard level MOSFET Rev. 01 — 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


    Original     		PDF PSMN2R8-40PS TO220 HEATSINK DATASHEET PSMN2R8-40PS

    Untitled

    Abstract: No abstract text available
    Text: PSMN017-80PS N-channel 80 V 17 mΩ standard level MOSFET in TO220 Rev. 02 — 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


    Original     		PDF PSMN017-80PS

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B PSMN7R8-100PSE N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package 11 August 2014 Product data sheet 1. General description Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of NXP's "NextPower Live" portfolio, the PSMN7R8-100PSE is robust enough to withstand


    Original     		PDF PSMN7R8-100PSE PSMN7R8-100PSE