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    TO220AB CHANNEL P Search Results

    TO220AB CHANNEL P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HAF1001 Renesas Electronics Corporation Silicon P Channel MOS FET Series Power Switching, TO220AB, / Visit Renesas Electronics Corporation
    HAF2001 Renesas Electronics Corporation Silicon N Channel MOS FET Series Power Switching, TO220AB, / Visit Renesas Electronics Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO220AB CHANNEL P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUK456-60H

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Automotive and general purpose switching applications. PINNING - TO220AB


    Original     		PDF O220AB BUK456-60H BUK456-60H

    BUK95150-55A

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK95150-55A BUK96150-55A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using


    Original     		PDF BUK95150-55A BUK96150-55A O220AB OT404 O220AB BUK95150-55A

    BUK7514-55A

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which


    Original     		PDF O220AB OT404 BUK7514-55A BUK7614-55A O220AB BUK7514-55A

    TRANSISTOR BUK9508

    Abstract: BUK9508-55A BUK9608-55A transistor smd 412 BE
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		PDF O220AB OT404 BUK9508-55A BUK9608-55A O220AB TRANSISTOR BUK9508 BUK9508-55A BUK9608-55A transistor smd 412 BE

    BUK95180-100A

    Abstract: BUK96180-100A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		PDF O220AB OT404 BUK95180-100A BUK96180-100A O220AB OT40otation BUK95180-100A BUK96180-100A

    BUK9535-55A

    Abstract: transistor smd 26 BUK953555A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		PDF O220AB OT404 BUK9535-55A BUK9635-55A O220AB BUK9535-55A transistor smd 26 BUK953555A

    smd transistor 2314

    Abstract: tr/smd transistor 2314
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		PDF O220AB OT404 BUK9516-55A BUK9616-55A O220AB smd transistor 2314 tr/smd transistor 2314

    IRF540G

    Abstract: Application Note of IRF540 IRF540 T1 IRF540 RF1S540SM RF1S540SM9A
    Text: IRF540, RF1S540SM Data Sheet 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs [ /Title IRF54 0, RF1S5 40SM /Subject (28A, 100V, 0.077 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB ) /Creator ()


    Original     		PDF IRF540, RF1S540SM IRF54 O220AB O263AB IRF540G Application Note of IRF540 IRF540 T1 IRF540 RF1S540SM RF1S540SM9A

    BUK9528-100A

    Abstract: BUK9628-100A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9528-100A BUK9628-100A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using


    Original     		PDF BUK9528-100A BUK9628-100A O220AB OT404 O220AB BUK9528-100A BUK9628-100A

    IRF820

    Abstract: irf-82
    Text: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()


    Original     		PDF IRF820 IRF82 O220AB IRF820 irf-82

    BUK456-60H

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Automotive and general purpose switching applications. PINNING - TO220AB


    Original     		PDF O220AB BUK456-60H BUK456-60H

    BUK9540-100A

    Abstract: BUK9640-100A transistor smd 26
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9540-100A BUK9640-100A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using


    Original     		PDF BUK9540-100A BUK9640-100A O220AB OT404 O220AB BUK9540-100A BUK9640-100A transistor smd 26

    BUK7628-100A

    Abstract: BUK7528-100A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which


    Original     		PDF O220AB OT404 BUK7528-100A BUK7628-100A O220AB BUK7628-100A BUK7528-100A

    RFP70N03

    Abstract: No abstract text available
    Text: RFP70N03, RF1S70N03SM Data Sheet 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs [ /Title RFP7 0N03, RF1S7 0N03S M /Subject (70A, 30V, 0.010 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB


    Original     		PDF RFP70N03, RF1S70N03SM 0N03S O220AB O263AB RFP70N03

    K 3264 fet transistor

    Abstract: K 3264 fet K 3264 transistor BUK7508-55A BUK7608-55A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which


    Original     		PDF O220AB OT404 BUK7508-55A BUK7608-55A O220AB K 3264 fet transistor K 3264 fet K 3264 transistor BUK7508-55A BUK7608-55A

    BUK7628-55A/C1,118-datasheet

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which


    Original     		PDF O220AB OT404 BUK7528-55A BUK7628-55A O220AB BUK7628-55A/C1,118-datasheet

    transistor 313 smd

    Abstract: BUK9515-100A BUK9615-100A SC18
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9515-100A BUK9615-100A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using


    Original     		PDF BUK9515-100A BUK9615-100A O220AB OT404 O220AB transistor 313 smd BUK9515-100A BUK9615-100A SC18

    BUK9575-100A

    Abstract: BUK9675-100A buk9575
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9575-100A BUK9675-100A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using


    Original     		PDF BUK9575-100A BUK9675-100A O220AB OT404 O220AB OT40ion BUK9575-100A BUK9675-100A buk9575

    BUK9506-55A

    Abstract: BUK9606-55A SC18
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		PDF O220AB OT404 BUK9506-55A BUK9606-55A O220AB BUK9506-55A BUK9606-55A SC18

    irf52 0

    Abstract: No abstract text available
    Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET [ /Title IRF52 0 /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator ()


    Original     		PDF IRF520 IRF52 O220AB IRF520 irf52 0

    BUZ11

    Abstract: buz11 application note BUZ1 TB334 TA9771
    Text: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features


    Original     		PDF BUZ11 O220AB BUZ11 buz11 application note BUZ1 TB334 TA9771

    RF1S540

    Abstract: RF1S540SM9A RF1S530SM OF IRF530 530uH
    Text: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530, RF1S530SM Data Sheet May 2000 14A, 100V, 0.160 Ohm, N-Channel Power


    Original     		PDF IRF530, RF1S530SM IRF53 O220AB O263AB RF1S540 RF1S540SM9A RF1S530SM OF IRF530 530uH

    irf630

    Abstract: rf1s630sm9a IRF630 Fairchild
    Text: IRF630, RF1S630SM Data Sheet [ /Title IRF63 0, RF1S6 30SM /Subject (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB June 1999 9A, 200V, 0.400 Ohm, N-Channel Power


    Original     		PDF IRF630, RF1S630SM IRF63 O220AB O263AB RF1S630SM irf630 rf1s630sm9a IRF630 Fairchild

    Untitled

    Abstract: No abstract text available
    Text: SCT2120AF Datasheet N-channel SiC power MOSFET Outline VDSS 650V RDS on (Typ.) 120m ID 29A PD 165W TO220AB Inner circuit Features (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel


    Original     		PDF SCT2120AF O220AB R1102A