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    TO220F TRANSISTOR Search Results

    TO220F TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO220F TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FGT313

    Abstract: FGT412
    Text: 2-3 IGBT Selection Guide By VCES VCES V 330 330 400 600 600 600 600 600 600 IC (A) 20 30 20 20 25 30 30 50 50 PC (W) 35 35 35 35 60 60 60 150 150 Part Number Package FGT312 FGT313 FGT412 FGT612 FGM622S FGM603 FGM623S MGD623N MGD623S TO220F(FM20) TO220F(FM20)


    Original     		PDF FGT312 FGT313 FGT412 FGT612 FGM622S FGM603 FGM623S MGD623N MGD623S O220F FGT313 FGT412

    NTE2577

    Abstract: NTE2576
    Text: NTE2576 NPN & NTE2577 (PNP) Silicon Complementary Transistors Audio Output Driver TO220F Full Pack Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V


    Original     		PDF NTE2576 NTE2577 O220F 700mA 700mA, NTE2577 NTE2576

    2SC4883

    Abstract: 2SC4883A 4883A FM20
    Text: 2SC4883/4883A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1859/A Application : Audio Output Driver and TV Velocity-modulation •Absolute maximum ratings (Ta=25°C) (Ta=25°C) 2SC4883A 2SC4883 Conditions External Dimensions FM20(TO220F)


    Original     		PDF 2SC4883/4883A 2SA1859/A) 2SC4883A 2SC4883 O220F) 10max 180min 150min 120typ 30typ 2SC4883 2SC4883A 4883A FM20

    2SA1667

    Abstract: 2SA1668 FM20 22SA1
    Text: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 Symbol 2SA1667 2SA1668 Unit •Electrical Characteristics (Ta=25°C) Conditions Symbol 2SA1667 2SA1668 Unit –10max –10max µA –150 –200 External Dimensions FM20 (TO220F)


    Original     		PDF 2SA1667/1668 2SC4381/4382) 2SA1667 2SA1668 10max O220F) 2SA1667 2SA1668 FM20 22SA1

    SPF0001

    Abstract: sta464c MN638S sta509a sanken S-60W STA464 SLA5027
    Text: Transistors and MOS FETs Index by Load Load Current Approx. 0.5A Approx. 1.2A Approx. 3A Approx. 5A 10A and over Part No. Chip Single Package Avalanche Diode TO220F TO220S Multi-chip Package SPF SD Surface-mount (Surface-mount) STA SMA SLA Remarks 2SA1488A


    Original     		PDF O220F O220S 210mJ 200mJ 150mJ 2SA1488A 2SC3851 2SC3852 SPF0001 sta464c MN638S sta509a sanken S-60W STA464 SLA5027

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20F BUJ303AX NPN power transistor Rev. 4 — 15 April 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A TO220F "full pack" plastic package. 1.2 Features and benefits


    Original     		PDF BUJ303AX OT186A O220F)

    transistor 2sc3852

    Abstract: No abstract text available
    Text: Power Transistor 2SC3852 Ta=25ºC Unit µA µA V Ratings 10max 100max 60min 500min 0.5max 15typ 50typ External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 16.9 V MHz pF a b 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC


    Original     		PDF 2SC3852 10max 100max 60min 500min 15typ 50typ O220F transistor 2sc3852

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20F BUJ303AX NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A TO220F "full pack" plastic package. 1.2 Features and benefits


    Original     		PDF BUJ303AX OT186A O220F)

    SI-8050RF

    Abstract: 8050rf TRANSISTOR sanken catalog diagram sanken TV circuits RK46 SI-8000RF SANKEN SI SI 8050RF sanken power transistor stepdown insulated output
    Text: DC/DC Step-Down Buck Converter IC SI-8050RF December 2005 •General Descriptions ■Package-TO220F-5 SI-8000RF series has protection circuits for overcurrent and overheating, and the functions required for switching regulators. Only four discrete components are required and it


    Original     		PDF SI-8050RF Package---TO220F-5 SI-8000RF SI-8033RF I02-003EA-051130 SI-8050RF 8050rf TRANSISTOR sanken catalog diagram sanken TV circuits RK46 SANKEN SI SI 8050RF sanken power transistor stepdown insulated output

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20F BUJ303AX NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A TO220F "full pack" plastic package. 1.2 Features and benefits


    Original     		PDF BUJ303AX OT186A O220F)

    2SC4024

    Abstract: No abstract text available
    Text: Power Transistor 2SC4024 Electrical Characteristics ICBO IEBO V BR CEO hFE VCE (sat) fT COB (Ta=25ºC) Unit µA µA V Ratings 10max 10max 50min 300 to 1600 0.5max 24typ 150typ External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 V MHz pF 16.9 Test Conditions


    Original     		PDF 2SC4024 10max 50min 24typ 150typ O220F 2SC4024

    Untitled

    Abstract: No abstract text available
    Text: NTE2679 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO220F Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D Wide Area of Safe Operation D Built−In Damper Diode Applications: D Horizontal Deflection Output for TV or CRT Monitor


    Original     		PDF NTE2679 O220F 100mA, 750mA,

    BUJ303AX

    Abstract: No abstract text available
    Text: TO -2 20F BUJ303AX NPN power transistor Rev. 05 — 3 May 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A TO220F "full pack" plastic package. 1.2 Features and benefits


    Original     		PDF BUJ303AX OT186A O220F) BUJ303AX

    Mosfet

    Abstract: SSF12N60F
    Text: SSF12N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.55Ω (typ.) ID 12A TO220F Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced Process Technology Special designed for PWM, load switching and general purpose applications


    Original     		PDF SSF12N60F O220F Mosfet SSF12N60F

    Untitled

    Abstract: No abstract text available
    Text: BUJD203AX NPN power transistor with integrated diode Rev. 01 — 27 September 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A TO220F full pack plastic package.


    Original     		PDF BUJD203AX OT186A O220F)

    transistor npn 12V 1A Collector Current

    Abstract: 2sc4382 2SC4381 FM20
    Text: 2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1667/1668 Unit Symbol Conditions 2SC4381 2SC4382 Unit 10max µA External Dimensions FM20(TO220F) ICBO VCB= VEBO 6 V IEBO IC 2 A V(BR)CEO 150 200 VEB=6V V µA 10max IC=25mA 150min


    Original     		PDF 2SC4381/4382 2SA1667/1668) 2SC4381 2SC4382 10max O220F) 150min 200min 60min transistor npn 12V 1A Collector Current 2sc4382 FM20

    ic SE 135

    Abstract: TRANSISTOR SE 135
    Text: Power Transistor FP812 ICBO IEBO VCEO hFE VCE sat (Ta=25ºC) Unit µA µA V Ratings 10max 10max –120min 70min –0.3max External Dimensions TO220F (full-mold) 10.0 V a b Typical Switching Characteristics VCC (V) –12 RL (Ω) 4 IC (A) –3 VBB1 (V) –10


    Original     		PDF FP812 10max 10max 120min 70min O220F ic SE 135 TRANSISTOR SE 135

    SI-8050RF

    Abstract: 8050rf SI 8050RF sanken tv 8050R TRANSISTOR sanken catalog SANKEN SI-1050S2 rk46 "Sanken Rectifiers"
    Text: DC/DC Step-Down Buck Converter IC SI-8050RF December 2005 •General Descriptions ■Package-TO220F-5 SI-8000RF series has protection circuits for overcurrent and overheating, and the functions required for switching regulators. Only four discrete components are required and it


    Original     		PDF SI-8050RF SI-8000RF Package---TO220F-5 SI-8033RF I02-003EA-051130 SI-8050RF 8050rf SI 8050RF sanken tv 8050R TRANSISTOR sanken catalog SANKEN SI-1050S2 rk46 "Sanken Rectifiers"

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 2SC3851 Electrical Characteristics External Dimensions TO220F full-mold 10.0 4.2 2.8 3.3 C0.5 16.9 V MHz pF a b 2.6 3.9 ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB (Ta=25ºC) Unit µA µA V Ratings 100max 100max 60min 40 to 320 0.5max 15typ


    Original     		PDF 2SC3851 100max 60min 15typ 60typ O220F

    HE10-10

    Abstract: No abstract text available
    Text: Power Transistor 2SC4153 External Dimensions TO220F full-mold 10.0 V V MHz pF a b RL (Ω) 16.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 C0.5 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC (V) 50 4.2 2.8 3.3 16.9 ICBO IEBO


    Original     		PDF 2SC4153 100max 120min 30typ 110typ O220F HE10-10

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 2SA1568 ICBO IEBO V BR CEO hFE VCE (sat) VFEC fT COB Ratings –100max –60max –60min 50min –0.35max –2.5max 40typ 330typ (Ta=25ºC) Unit µA mA V External Dimensions TO220F (full-mold) 10.0 V V MHz pF a b RL (Ω) 4 IC (A) –6 VBB1


    Original     		PDF 2SA1568 100max 60max 60min 50min 35max 40typ 330typ O220F

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 2SD2141 Test Conditions VCB = 330V VEB = 6V IC = 25mA VCE = 2V, IC = 3A IC = 4A, IB = 20mA ICBO IEBO V BR CEO hFE VCE (sat ) Ratings 10max 20max 330 to 430 1500min 1.5max (Ta=25ºC) Unit µA µA V External Dimensions TO220F (full-mold) 10.0


    Original     		PDF 2SD2141 10max 20max 1500min O220F 150mA 120mA

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor FN812 ICBO IEBO VCEO hFE VCE sat (Ta=25ºC) Unit µA µA V Ratings 10max 10max 100min 70min 0.3max External Dimensions TO220F (full-mold) 10.0 V a b Typical Switching Characteristics VCC (V) 12 RL (Ω) 4 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5


    Original     		PDF FN812 10max 100min 70min O220F

    Mosfet

    Abstract: SSF13N50F
    Text: SSF13N50F 500V N-Channel MOSFET Main Product Characteristics VDSS 500V RDS on 0.41Ω(typ.) ID 13A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced Process Technology Special designed for PWM, load switching and general purpose applications


    Original     		PDF SSF13N50F O220F Mosfet SSF13N50F