Sanken 2011
Abstract: No abstract text available
Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC ２ＳＫ３７１０ May. 2011 Package Features ･ Low on-state resistance 5.0mΩ VGS=10V ･ Built-in gate protection diode ･SMD PKG TO220S Applications ･DC−DC converter ･Mortar drive Internal Equivalent Circuit
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100uA)
O220S
Sanken 2011
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relay 5v 30a
Abstract: Si520 si5201
Text: Semiconductor relay SI-5201 March 2007 •Package ■General Description SI-5201 is an intelligent high-side switch with TO220S-7 N-channel power MOSFET available in Sanken’s TO220S-7 package. Over current and thermal shutdown circuits are integrated with control logic circuit in
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SI-5201
SI-5201
O220S-7
I04-001EA-070320
relay 5v 30a
Si520
si5201
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MN638S
Abstract: ic 3A hfe 500
Text: Power Transistor MN638S Test Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA External Dimensions TO220S 4.44±0.2 10.2±0.3 1.3±0.2 V a +0.3 ICBO IEBO V BR CEO hFE VCE (sat) (Ta=25ºC) Unit µA mA V Ratings 10max 20max 330 to 430 1500min
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MN638S
10max
20max
1500min
O220S
150mA
120mA
MN638S
ic 3A hfe 500
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10A Schottky
Abstract: MPE-29G
Text: Power Surface Mount 90V, 20A Schottky barrier diode in TO220S package MPE-29G •Absolute maximum ratings Parameter Ratings Unit VRM 90 V IF AV 20 A IFSM 120 A I t 72 2 A s Tj – 40 to +150 °C Tstg – 40 to +150 °C 2 ■Electrical characteristics Conditions
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O220S
MPE-29G
85max
100max
UL94V-0
10A Schottky
MPE-29G
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SPF0001
Abstract: sta464c MN638S sta509a sanken S-60W STA464 SLA5027
Text: Transistors and MOS FETs Index by Load Load Current Approx. 0.5A Approx. 1.2A Approx. 3A Approx. 5A 10A and over Part No. Chip Single Package Avalanche Diode TO220F TO220S Multi-chip Package SPF SD Surface-mount (Surface-mount) STA SMA SLA Remarks 2SA1488A
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O220F
O220S
210mJ
200mJ
150mJ
2SA1488A
2SC3851
2SC3852
SPF0001
sta464c
MN638S
sta509a
sanken S-60W
STA464
SLA5027
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SANKEN power supply
Abstract: SI-5201 Relay 5V, 10A, sanken sanken power transistor SANKEN SI B105 CF35 relay 5v 5a, 5 pin relay 5v 30a
Text: Semiconductor relay SI-5201 March 2007 •Package ■General Description SI-5201 is an intelligent high-side switch with TO220S-7 N-channel power MOSFET available in Sanken’s TO220S-7 package. Over current and thermal shutdown circuits are integrated with control logic circuit in
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SI-5201
SI-5201
O220S-7
O220S-7
I04-001EA-070320
SANKEN power supply
Relay 5V, 10A,
sanken
sanken power transistor
SANKEN SI
B105
CF35
relay 5v 5a, 5 pin
relay 5v 30a
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Untitled
Abstract: No abstract text available
Text: Power Transistor MN638S Test Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA External Dimensions TO220S 4.44±0.2 10.2±0.3 1.3±0.2 V a +0.3 ICBO IEBO V BR CEO hFE VCE (sat) (Ta=25ºC) Unit µA mA V Ratings 10max 20max 330 to 430 1500min
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MN638S
O220S
10max
20max
1500min
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ldpak
Abstract: PRSS0004AB PRSS0004AE
Text: Unit:mm Reel type A A 330 N 100 W1 25.5 W2 29.5 Dimensions mm A0 B0 K0 10.8 13.9 4.9 F 11.5 D1 2 Maximum storage No. Transistor/Reel 1000 24-mm width emboss taping Taping code Package name MTE2412G-TO220S TO-220S TE2412-31P, 32P LDPAK(S)-(1) TE2416-13P
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24-mm
MTE2412G-TO220S
O-220S
TE2412-31P,
TE2416-13P
PRSS0004AB-A
PRSS0004AE-C
PRSS0004AE-B
ldpak
PRSS0004AB
PRSS0004AE
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Untitled
Abstract: No abstract text available
Text: NTE2911 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220SIS Type Package Features: D Low Drain−Source ON−Resistance D High Forward Transfer Admittance D Low Leakage Current D Enhancement Mode Absolute Maximum Ratings: TA = +25°C, Note 1 unless otherwise specified
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NTE2911
O220SIS
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Untitled
Abstract: No abstract text available
Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC ２ＳＫ３７１０ Features ･ Low on-state resistance 5.0mΩ VGS=10V ･ Built-in gate protection diode ･SMD PKG May. 2011 Package TO220S Applications ･DC－DC converter ･Mortar drive Internal Equivalent Circuit
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O220S
100uA)
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Untitled
Abstract: No abstract text available
Text: TK8A25DA MOSFETs Silicon N-Channel MOS π-MOS TK8A25DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
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TK8A25DA
O-220SIS
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TK72A
Abstract: No abstract text available
Text: TK72A12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK72A12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)
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TK72A12N1
O-220SIS
TK72A
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Untitled
Abstract: No abstract text available
Text: TK80F06K3L MOSFETs Silicon N-channel MOS U-MOS TK80F06K3L 1. Applications • Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) (2)
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TK80F06K3L
O-220SM
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tk12a65d
Abstract: tk12a65
Text: TK12A65D MOSFETs Silicon N-Channel MOS π-MOS TK12A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)
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TK12A65D
O-220SIS
tk12a65d
tk12a65
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tk8a60
Abstract: No abstract text available
Text: TK8A60W MOSFETs Silicon N-Channel MOS DTMOS TK8A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching
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TK8A60W
O-220SIS
tk8a60
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5A 700V MOSFET
Abstract: 700v 5A mosfet
Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: TK5A65D * Category: Transistors /Power MOSFET/Nch 500V<VDSS 700V
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TK5A65D
O-220SIS
TK5A65D+
16-Apr-09
5A 700V MOSFET
700v 5A mosfet
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TJ9A10M3
Abstract: No abstract text available
Text: TJ9A10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ9A10M3 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)
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TJ9A10M3
O-220SIS
TJ9A10M3
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Untitled
Abstract: No abstract text available
Text: TK100F04K3L MOSFETs Silicon N-channel MOS U-MOS TK100F04K3L 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V)
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TK100F04K3L
AEC-Q101
O-220SM
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TK16A60W
Abstract: TK16
Text: TK16A60W MOSFETs Silicon N-Channel MOS DTMOS TK16A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching
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TK16A60W
O-220SIS
TK16A60W
TK16
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50v AC to 12v 15A dc circuit diagrams
Abstract: MIC4685BM 24v 12v 20A regulator voltage circuit diagram
Text: MIC4685 Micrel MIC4685 3A SPAK SuperSwitcher Buck Regulator Final Information General Description Features The MIC4685 is a high-efficiency 200kHz stepdown buck switching regulator. Power conversion efficiency of above 85% is easily obtainable for a wide variety of applications.
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MIC4685
MIC4685
200kHz
O-220s
O-263s
O-263.
SPAK-07L
50v AC to 12v 15A dc circuit diagrams
MIC4685BM
24v 12v 20A regulator voltage circuit diagram
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2SK1928
Abstract: No abstract text available
Text: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance
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OCR Scan
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2SK1928
ij100A/MS
2SK1928
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2376 T O S H IB A FIELD EFFECT TRA N SISTO R SILICON N C H A N N EL M O S T Y PE L2-tt- M O S V 2SK2376 HIGH SPEED , HIGH C U RREN T SW IT C H IN G A PPLIC A TIO N S INDUSTRIAL APPLICATIONS Unit in m m TO-22QFL C H O PPER REG U LA TO R, DC-DC C O N V ER T ER A N D M O T O R DRIVE
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2SK2376
O-22QFL
20kil)
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VN66AFD
Abstract: vn66a
Text: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS<on) Max (&) VGS(th) (V) I d (A) 1.8 e v Gs = io v 0.5 to 2 0.47 0.8 to 2 0.33 0.8 to 2.5 1.46 TN0601L VN0606L 3e 60 VN66AFD v as = io v
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TN0601L,
VN0606L,
VN66AFD
TN0601L
VN0606L
VN66AFD
S-04279--
16-Jul-01
vn66a
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transistor VN46AFD
Abstract: VN46AFD TO220SD
Text: VN46AFD N-Channef Enhancement-Mode M O S Transistor B W SgA PRODUCT SUMMARY V BR|DSS 'i r 40 3 Id (A FRONT VIEW TO-220SD o 1.46 Performance Curves: VNDQ06 1 SOURCE 2 GATE 3 & TAB - DRAIN 123 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) SYM BOL
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VN46AFD
O-220SD
VNDQ06
transistor VN46AFD
TO220SD
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