Untitled
Abstract: No abstract text available
Text: HGTG30N120CN / HGTG5A30N120CN Data Sheet August 2002 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN and HGT5A30N120CN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar
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HGTG30N120CN
HGTG5A30N120CN
HGT5A30N120CN
TA49281.
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Untitled
Abstract: No abstract text available
Text: V i sh ay Intertechnolo g y, Inc . I INNOVAT AND TEC O L OGY LTO 30, LTO 50, LTO 100 N HN POWER THICK FILM RESISTORS O 19 62-2012 Resistors - 30 W, 50 W, and 100 W at 25 °C 30 W, 50 W, and 100 W Thick Film Power Resistors Key Benefits • • • • •
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O-220
O-247
2011/65/EU
21-Jan-11
VMN-PT9158-1202
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Untitled
Abstract: No abstract text available
Text: SB4020ST SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 60 Volts CURRENT 40 Amperes 0.615 15.60 MAX. FEATURES 0.520(13.20) 0.504(12.80) • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. 0.185(4.70) 0.169(4.30) 0.402(10.20)
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SB4020ST
2010-REV
0-45V
0-60V
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Untitled
Abstract: No abstract text available
Text: SB3020ST SERIES SCHOTTKY BARRIER RECTIFIERS 20 to 60 Volts CURRENT VOLTAGE 30 Amperes 0.615 15.60 MAX. FEATURES 0.520(13.20) 0.504(12.80) • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. 0.185(4.70) 0.169(4.30) 0.402(10.20)
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SB3020ST
0-45V
0-60V
2010-REV
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MJE1100
Abstract: MJ4001 SDN201 BD263B Motorola transistors MJE1102
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (V) W Darlington Transistors, NPN (Cont'd) . . . .5 . . . .10 . . . .15 . . . .20 . . . .25 . . . .30 . . . .35 . . . . 40 . . . .45 . . . .50 . . . .55 . . . . 60 . . .65 . . . .70
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MJ4200
MJ4000
MJD6039
MJD6039-1
2SD1520
2SD1414
2SD1933
MJE1100
MJ4001
SDN201
BD263B
Motorola transistors MJE1102
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SKC10C75
Abstract: SKC10C70 SKC10A75 2sc2303 BUY70 STI403 2SC2650 idc33
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type >c Max V BR CEO (A) Of) PD Max hFE fT ON) Min (Hz) ICBO t0N r (CE)sat Toper Max Max (A) (8) Max (Ohms) Max (°C) Package Style D vices 20 Watts or More, (Cont'd) 5 10 15 20 25 30 35 40 45
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XGSR7535
SPT4624
BUW22
SML02354
BUW24
XGSR10035
SVT350-5
2N6579
2N6582
SKC10C75
SKC10C70
SKC10A75
2sc2303
BUY70
STI403
2SC2650
idc33
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HGTG27N120BN
Abstract: 27N120 27N120BN HGT5A27N120BN RHRP30120 TA49280 LD26 MJ2002 G27N120BN
Text: HGTG27N120BN / HGT5A27N120BN Data Sheet August 2002 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN and HGT5A27N120BN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar
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HGTG27N120BN
HGT5A27N120BN
HGT5A27N120BN
27N120
27N120BN
RHRP30120
TA49280
LD26
MJ2002
G27N120BN
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car steering left and right motor control circuit
Abstract: IXAN0019 MOSFET Module 24v FDM100-0045SP ISOPLUS247
Text: AUTOMOTIVE APPLICATIONS FEATURE IXAN0019 High Power TrenchMOSFET Solutions in Automotive Designs In the automobile, more and more mechanical and hydraulic drives will be replaced by electrically driven solutions. In the following article, power semiconductors in TrenchMOSFET technology will be presented giving
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IXAN0019
car steering left and right motor control circuit
IXAN0019
MOSFET Module 24v
FDM100-0045SP
ISOPLUS247
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thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™
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b0333
Abstract: box53b 044E3 BOW93B b0647 BOX67A BOT63A BOT65A 2N605B B0699
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) tr Max tf Max (s) (s) 300n 500n 500n 1.2u 175 A 175 J 150 J 150 J 1.5u B.5u 300n 300n 300n 300n 5.0u 800n BOOn BOOn BOOn 150 J 175 J
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U2T201
2N6352
2S01169
2S01315
SGS121
TIP121
TIP621
MJE1102
b0333
box53b
044E3
BOW93B
b0647
BOX67A
BOT63A
BOT65A
2N605B
B0699
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IDC2555
Abstract: TIPL763A BU526 2N630B 250n
Text: POWER SILICON NPN Item Number Part Number V I C) 5 10 15 20 25 30 55 60 65 70 75 BO B5 90 95 Max (Hz) leBO Max (A t, Max Tope, Max (I) eC) Package Style >= 5 A, (Cont'd) B.O B.O B.O B.O B.O B.O B.O B.O B.O B.O 350 350 350 350 350 350 350 350 350 350 4.0 4.0
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to1502
Abstract: IL102 MG650 2as201 LMP9100 mp9000 MG815 RESISTOR MG660 MG680 MP9100
Text: Page 2 of 2 MP900 and MP9000 Series Kool-Pak ® ® MP900 and MP9000 Series Kool-Pak Type MG Precision High Voltage Resistors MP900 and MP9000 Series Kool-Pak Type MG Precision High Voltage Resistors Power Film Resistors TO-126, TO-220 and TO-247 Style Type
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MP900
MP9000
MP900Precision
O-126,
O-220
O-247
to1502
IL102
MG650
2as201
LMP9100
MG815 RESISTOR
MG660
MG680
MP9100
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what is TG in PCB material
Abstract: ims pcb irf3205 mosfet transistor FET IRF3205 2804S IRF3205 IR IRFS3006PBF AN949 AN-1140 IPC-2221
Text: Application Note AN-1140 Continuous dc Current Ratings of International Rectifier’s Large Semiconductor Packages By K. Teasdale Principal Engineer International Rectifier Corporation 1 May 2009 Table of contents Page Section 1: Classic Current Rating for Power Semiconductor .2
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AN-1140
com/technical-info/appnotes/an-949
IRFS3006PbF
what is TG in PCB material
ims pcb
irf3205 mosfet transistor
FET IRF3205
2804S
IRF3205 IR
AN949
AN-1140
IPC-2221
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Untitled
Abstract: No abstract text available
Text: Part Number: 780653U01375G One Piece SolutionsTM The Chiefs Our Chiefs offer one-piece cooling solutions for TO-220s, TO-126s, and TO-247s. Each model is specially designed with an integrated clip to hold and cool a specific discrete power device. A range of solderable pins are available for the M3 and M4 slots in all of the extrusions in this
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780653U01375G
O-220s,
O-126s,
O-247s.
O-220
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igbt inverter welder schematic
Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field
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BUX79
Abstract: SML424 40322 GE 2sc3233 2SC1504 DTS801 STS401 SML425 BU226 DTS-801
Text: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(BR)CE on PD Max hFE fT ON) Min (Hz) ICBO t()N r Max Max (A) (s) Max (Ohms) (CE)sat T Oper Package Style Max (°C) Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15
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2SD1017
2N6211
MJ3026
2SC1031
D44T3
D44T4
MJ3585
MJ4240
BUX79
SML424
40322 GE
2sc3233
2SC1504
DTS801
STS401
SML425
BU226
DTS-801
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BD291
Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max r hFE fT 'CBO Max Max Mln (Hz) (A) (8) on ON) 100 100 100 100 100 100 50 50 50 50 50 100 50 218 218 30 30 75 75 75 75 75 75 75 75 80 60 60 70 80 22 22 22 22 22
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DTS802
DTS804
STI802
STI804
2SC3658
2SC3883
2SD1455
2SD1911
BD291
SD1534-8
2S-C3883
bd292
trw rf transistors
2SC2198 Sanken NPN
SD1428
2N5034
2N5035
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40N60A4D
Abstract: TA49347 40N60A4 MOSFET 40A 600V HGT5A40N60A4D LD26
Text: HGT5A40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input
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HGT5A40N60A4D
HGT5A40N60A4D
150oC.
TA49347.
100kHz
200kHz
40N60A4D
TA49347
40N60A4
MOSFET 40A 600V
LD26
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smps 500W
Abstract: smps 500w half bridge 500w half bridge smps smps 1kW IRFP450 full bridge smps 100w half bridge h bridge irf740 smps igbt HGTG30N60A4 1kW IGBT
Text: 108872 IGBT LC 0006.1 9/11/00 11:28 AM Page 1 First-Choice Power Switch IGBT Switch Mode Power Supply SMPS IGBTs SMPS IGBT Product Offering New SMPS IGBTs are now the first-choice power switch for high-frequency, off-line power conversion Intersil has developed the 600V IGBT
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100kHz
100kHz
HGTG12N60A4
O-252AA
O-220AB
T0-263AB
O-268
Breakdown/10
100ns
200ns
smps 500W
smps 500w half bridge
500w half bridge smps
smps 1kW
IRFP450 full bridge
smps 100w half bridge
h bridge irf740
smps igbt
HGTG30N60A4
1kW IGBT
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2SB1825
Abstract: LM3661TL-1.40 2SC2166 044C8 b0587 30u60 MJE2481 MJE2483 MJ481
Text: POWER SILICON NPN Item Number Part Number I C 5 10 -15 20 - 25 30 35 40 45 50 55 -60 -65 70 80 85 - 90 95 Ie Max (A) Y(BR)CEO (V) fT hFE Min Max (Hz) leBO Max (A) t, Max tf Max (8) (8) PD Max (W) TOper Max (Oe) Package Style >= 2.5 A, (Cont'd) BOY78 BOY71
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BOY78
BOY71
MJE2481
MJE2483
B0439
2N3054
2N3054A
MJE5191J
2SB1825
LM3661TL-1.40
2SC2166
044C8
b0587
30u60
MJ481
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r609
Abstract: No abstract text available
Text: MBR6040ST SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 100 Volts CURRENT 60 Amperes 0.615 15.60 MAX. FEATURES 0.520(13.20) 0.504(12.80) • Plastic package has Underwriters Laboratory 0.185(4.70) 0.169(4.30) 0.402(10.20) 0.385(9.80) Flammability Classification 94V-O.
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MBR6040ST
2002/95/EC
0-45V
0-100V
2011-REV
r609
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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qe R 521 smd
Abstract: No abstract text available
Text: P re lim in a ry data <> IXGH20N60B IXGH20N60BS HiPerFAST IGBT Symbol Test Conditions V CES Tj = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 Mi2 vC0R vGES •« Tc = 25°C Tc = 90°C Tc = 25°C, 1 ms U ■c. SSOA RBSOA p c 600 600 VGE= 15 V, TVJ = 125°C, RG= 22 O
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IXGH20N60B
IXGH20N60BS
O-247SMD*
O-247
qe R 521 smd
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IXGH32N60C
Abstract: No abstract text available
Text: □ IXYS HiPerFAST IGBT Lightspeed™ Series IXGH32N60C IXGH32N60CS VCES IC25 V CE sat typ tfity p 600 V 60 A 2.1 V 55 ns Prelim inary Data Sheet Symbol TestConditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i
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IXGH32N60C
IXGH32N60CS
O-247
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