Untitled
Abstract: No abstract text available
Text: NTE2969 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3P Package Description: The NTE2969 is an N−channel enhancement mode power field effect transistor in a TO3P type package especially tailored to minimize on−state resistance, provide superior switching performance, and
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NTE2969
NTE2969
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NTE6093
Abstract: 30A SCHOTTKY BARRIER RECTIFIER low power loss rectifier transistor working principle uA 747
Text: NTE6093 Silicon Rectifier Dual, Schottky Barrier 60V, 60 Amp, TO3P Description: The NTE6093 is a silicon rectifier in a TO3P type package designed using the Schottky Barrier principle with a Molybenum barrier metal. Features: D Low Forward Voltage D Guard−Ring for Stress Protection
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NTE6093
NTE6093
30A SCHOTTKY BARRIER RECTIFIER
low power loss rectifier
transistor working principle
uA 747
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NTE6090
Abstract: TO218 package TO3P package
Text: NTE6090 Silicon Dual Power Rectifier 45V, 30 Amp, TO218/TO3P Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range
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NTE6090
O218/TO3P
NTE6090
O3P/TO218
TO218 package
TO3P package
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Silicon NPN Darlington transistor
Abstract: No abstract text available
Text: NTE214 Silicon NPN Transistor Darlington Driver Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.
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NTE214
NTE214
500IB1
500IB2
Silicon NPN Darlington transistor
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fkp280a
Abstract: FKP280 SANKEN sanken power transistor B105 CF35 T02-001EA-050912 ha 2005 fet t02 "Sanken Electric"
Text: N-Channel MOS FET FKP280A September, 2005 •Package-FM100 TO3P Full Mold ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit Ｄ(2)
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FKP280A
Package---FM100
T02-001EA-050912
fkp280a
FKP280
SANKEN
sanken power transistor
B105
CF35
T02-001EA-050912
ha 2005
fet t02
"Sanken Electric"
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T02-001EA-050912
Abstract: fkp280a
Text: N-Channel MOS FET FKP280A September, 2005 •Package-FM100 TO3P Full Mold ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit Ｄ(2)
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FKP280A
Package---FM100
T02-001EA-050912
T02-001EA-050912
fkp280a
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T02-001EA-050912
Abstract: No abstract text available
Text: N-Channel MOS FET FKP280A September, 2005 •Package-FM100 TO3P Full Mold ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit Ｄ(2)
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FKP280A
Package---FM100
T02-001EA-050912
T02-001EA-050912
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voltage regulator 24v 2a
Abstract: NTE116 NTE1940
Text: NTE1940 Integrated Circuit Positive Voltage Regulator, 24V, 2A Features: D 3 Pin Plastic Package TO3P D Only Output Capacitor is Externally Required D Precise Setting Voltage of ±2% D Wide Input Voltage Range ~45V D Built–in Current Foldback Protection
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NTE1940
NTE116.
voltage regulator 24v 2a
NTE116
NTE1940
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TO220 HEATSINK DATASHEET
Abstract: to220 mica 7721-7PPS Bush TO3 SILICONE MICA SHEET DATA SHEET 50A227B WARTH TO3P package 50B247A to3 HEATSINK
Text: MOUNTING HARDWARE HEATSINKS & MOUNTINGS WASHERS Economical, commercial grade silicone rubber insulating washers reinforced with glass fibre. Flame retardant to UL94V-0. Supplied specifically for the packages shown below. Colour - Grey. TO220 TO3P/TO247 TO3
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UL94V-0.
O3P/TO247
50B220A
50B247A
50B003A
50A220A
50A220B
50A103A
O5/TO39
TO220 HEATSINK DATASHEET
to220 mica
7721-7PPS
Bush
TO3 SILICONE MICA SHEET DATA SHEET
50A227B
WARTH
TO3P package
50B247A
to3 HEATSINK
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FKP280A
Abstract: No abstract text available
Text: N-Channel MOS FET FKP280A September, 2005 Package-FM100 TO3P Full Mold Features Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit Absolute maximum ratings (Ta=25°C)
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FKP280A
Package---FM100
T02-001EA-050912
FKP280A
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NTE7166
Abstract: No abstract text available
Text: NTE7166 Integrated Circuit Flyback Switching Regulator Description: The NTE7166 is an integrated circuit in a 5 - Lead Staggered TO3P type package and is specifically designed to satisfy the requirements for increased integration and reliability in off - line quasi- resonant
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NTE7166
NTE7166
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DC 5V to DC 100V CIRCUIT DIAGRAM
Abstract: 110v to 5v dc schematic transistor Ic 4A datasheet NPN 547 relay ic nte215
Text: NTE215 Silicon NPN Transistor Darlington Driver Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.
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NTE215
NTE215
500IB1
500IB2
DC 5V to DC 100V CIRCUIT DIAGRAM
110v to 5v dc schematic
transistor Ic 4A datasheet NPN
547 relay ic
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NTE116
Abstract: NTE1940
Text: NTE1940 Integrated Circuit Positive Voltage Regulator, 24V, 2A Features: D 3 Pin Plastic Package TO3P D Only Output Capacitor is Externally Required D Precise Setting Voltage of ±2% D Wide Input Voltage Range ~45V D Built−in Current Foldback Protection
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NTE1940
NTE116.
NTE116
NTE1940
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NTE2314
Abstract: No abstract text available
Text: NTE2304 Silicon NPN Transistor High Current, High Speed Switch Compl to NTE2314 Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications.
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NTE2304
NTE2314)
NTE2304
10IB1
10IB2
NTE2314
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NTE6093
Abstract: No abstract text available
Text: NTE6093 Silicon Rectifier Dual, Schottky Barrier Description: The NTE6093 is a silicon rectifier in a TO3P type package designed using the Schottky Barrier principle with a Molybenum barrier metal. Features: D Low Forward Voltage D Guard–Ring for Stress Protection
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NTE6093
NTE6093
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547 relay ic
Abstract: NTE2314 "PNP Transistor" HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
Text: NTE2314 Silicon PNP Transistor High Current, High Speed Switch Compl to NTE2304 Description: The NTE2314 is a silicon PNP transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications.
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NTE2314
NTE2304)
NTE2314
10IB1
10IB2
547 relay ic
"PNP Transistor"
HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
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voltage regulator 12v 2a
Abstract: NTE1936 NTE116 voltage regulator -12v
Text: NTE1936 Integrated Circuit Positive Voltage Regulator, 12V, 2A Features: D 3 Pin Plastic Package TO3P D Only Output Capacitor is Externally Required D Precise Setting Voltage of ±2% D Wide Input Voltage Range ~45V D Built–in Current Foldback Protection
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NTE1936
NTE116.
voltage regulator 12v 2a
NTE1936
NTE116
voltage regulator -12v
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Untitled
Abstract: No abstract text available
Text: NTE2678 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO3P H IS Type Package Features: D Built−In Damper Diode D High Voltage, High Speed Applications: D Color TV Horizontal Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
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NTE2678
100mA,
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Untitled
Abstract: No abstract text available
Text: NTE2676 Silicon NPN Transistor High Voltage, High Speed Switch TO3P H IS Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D High Switching Speed D Low Saturation Voltage Applications: D Color TV Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
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NTE2676
100mA,
75kHz
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NTE6090
Abstract: TO218 package
Text: NTE6090 Silicon Dual Power Rectifier Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range
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NTE6090
NTE6090
O3P/TO218
TO218 package
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jst41
Abstract: No abstract text available
Text: FT4018.P INSULATED STANDARD TRIAC On-State Current 40 Amp INSULATED TO3P Gate Trigger Current £ 50 mA 18 Off-State Voltage 600 V ÷ 800 V 1 * Standard current TRIAC * Low thermal resistance with clip bounding * Low thermal resistance isolation ceramic for FT.P
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FT4018
jst41
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std03n
Abstract: t01 transistor TRANSISTOR sanken catalog sanken power transistor T01001 sanken sanken audio
Text: Darlington Transistor with built-in compensation diodes STD03N March, 2006 •Package- MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode
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STD03N
STD03P
MT-105
T01-001EA-060309
std03n
t01 transistor
TRANSISTOR sanken catalog
sanken power transistor
T01001
sanken
sanken audio
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TRANSISTOR sanken catalog
Abstract: SANKEN POWER TRANSISTOR t01 transistor SANKEN AUDIO STD03N STD03P T01001 B105 sanken transistor "Sanken Rectifiers"
Text: Darlington Transistor with built-in compensation diodes STD03N March, 2006 •Package- MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode
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STD03N
MT-105
STD03P
10that
T01-001EA-060309
TRANSISTOR sanken catalog
SANKEN POWER TRANSISTOR
t01 transistor
SANKEN AUDIO
STD03N
STD03P
T01001
B105
sanken transistor
"Sanken Rectifiers"
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Untitled
Abstract: No abstract text available
Text: FT4016.P INSULATED HIGH COMMUTATION TRIAC On-State Current Gate Trigger Current 40 Amp ≤ 50 mA 16 INSULATED TO3P Off-State Voltage 600 V ÷ 800 V 1 * Standard current TRIAC * Low thermal resistance with clip bounding * Low thermal resistance isolation
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FT4016
Sep-09
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