TO5 TRANSISTOR Search Results

TO5 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TO5 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
geiger apd Abstract: SPMMicro3035x13 geiger tube Geiger photomultiplier SPMMicro1020X13 SPMMicro6035X13 helium gas sensor module PDF PIN APD DIODE DESCRIPTION pulse metal detector Text: SPMMicro Series High Gain APD SPMMicro detectors come in a variety of pin package formats Overview according to footprint requirements, levels of hermeticity, and cooling. These include glass/metal sealed transistor header package types TO46, TO5, TO8 and ceramic packages (TO5	Original	MIL-STD-750, 1x10-8 geiger apd SPMMicro3035x13 geiger tube Geiger photomultiplier SPMMicro1020X13 SPMMicro6035X13 helium gas sensor module PDF PIN APD DIODE DESCRIPTION pulse metal detector	PDF
TO-205AA Abstract: No abstract text available Text: SILICON NPN TRANSISTOR 2N2891LL • V BR CEO = 80V (Min). • Hermetic TO5 (TO-205AA) Metal Package. • Ideally Suited For Low Frequency Large Signal Applications (High Voltage). • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)	Original	2N2891LL O-205AA) TO-205AA	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN TRANSISTOR 2N2891LL • V BR CEO = 80V (Min). • Hermetic TO5 (TO-205AA) Metal Package. • Ideally Suited For Low Frequency Large Signal Applications (High Voltage). • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)	Original	2N2891LL O-205AA) 57mW/Â -65ent	PDF
NPN Transistor VCEO 1000V Abstract: BUL54A-TO5 Text: SEME BUL54A-TO5 LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 8.51 0.34 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Designed for use in electronic ballast applications 6.10 (0.240) 6.60 (0.260)	Original	BUL54A-TO5 O-205AA) NPN Transistor VCEO 1000V BUL54A-TO5	PDF
"infrared distance sensor" 1997 Abstract: 5966-1624E Reflective Optical Sensor high resolution spot light size photodiode HP transistor cross reference Text: Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr	Original	HEDS-1200 HEDS-1300 HEDS1300 5965-5947E 5966-1624E "infrared distance sensor" 1997 5966-1624E Reflective Optical Sensor high resolution spot light size photodiode HP transistor cross reference	PDF
TO-205AA Abstract: TO205AA Text: SILICON NPN TRANSISTOR 2N5786L • Low Saturation Voltage. High Gain At High Current. • Hermetic TO5 TO-205AA Metal Package. • Ideally suited for General Purpose Amplifier Applications. • High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)	Original	2N5786L O-205AA) TO-205AA TO205AA	PDF
Untitled Abstract: No abstract text available Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and	Original	BUL54A-TO5 O-205AA)	PDF
Reflective Optical Sensor focused Abstract: light sensor 3 bin Reflective Optical Sensor high resolution transistor a999 HBCS-4999 HBCS-A998 HBCS-A999 HEDS1300 HEDS-1300 Text: Optical Reflective Sensor Technical Data HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr The HEDS-1300 sensor is fully integrated modules designed for	Original	HEDS-1300 5966-1624E 5988-4570EN Reflective Optical Sensor focused light sensor 3 bin Reflective Optical Sensor high resolution transistor a999 HBCS-4999 HBCS-A998 HBCS-A999 HEDS1300	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN TRANSISTOR 2N5786L • Low Saturation Voltage. High Gain At High Current. • Hermetic TO5 TO-205AA Metal Package. • Ideally suited for General Purpose Amplifier Applications. • High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)	Original	2N5786L O-205AA)	PDF
transistor VCEO 1000V Abstract: NPN Transistor VCEO 1000V BUL54A-TO5 LE17 Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and	Original	BUL54A-TO5 O-205AA) transistor VCEO 1000V NPN Transistor VCEO 1000V BUL54A-TO5 LE17	PDF
White Paint Abstract: 3 pin IR sensor pin connection gold detector circuit free Reflective Optical Sensor high resolution HBCS-4999 HBCS-A998 HBCS-A999 TRansistor 1300 free HEDS-1200 HEDS1300 Text: Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr	Original	HEDS-1200 HEDS-1300 HEDS1300 5965-5947E 5966-1624E White Paint 3 pin IR sensor pin connection gold detector circuit free Reflective Optical Sensor high resolution HBCS-4999 HBCS-A998 HBCS-A999 TRansistor 1300 free	PDF
HEDS 1000 Abstract: HBCS-A999 high resolution reflective bar code lens sensor Reflective Optical Sensor focused HEDS-1300 HEDS-1200 HBCS-4999 HBCS-A998 HEDS1200 HEDS1300 Text: H Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr	Original	HEDS-1200 HEDS-1300 HEDS1300 HEDS 1000 HBCS-A999 high resolution reflective bar code lens sensor Reflective Optical Sensor focused HBCS-4999 HBCS-A998 HEDS1200	PDF
NPN Monolithic Transistor Pair Abstract: Darlington pair IC darlington pair transistor NTE904 Text: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12−Lead TO5 type metal can. Two of the four transistors are connected in the Darlington	Original	NTE904 NTE904 12-Lead 31-j1 NPN Monolithic Transistor Pair Darlington pair IC darlington pair transistor	PDF
Darlington pair IC Abstract: NTE904 darlington pair transistor NPN Monolithic Transistor Pair Text: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington	Original	NTE904 NTE904 Darlington pair IC darlington pair transistor NPN Monolithic Transistor Pair	PDF

2N3907 Abstract: 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252 Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C O N V E N T I O N A L PAC K AG E S TO46 TO72 TO71 TO18 TO5 TO39 TRANSISTORS, MOSFETS, DIODES, VOLTAGE REGULATORS TO46 TO18 cont TO39 (cont) TO39 (cont) TO39 (cont) TO77(cont)	Original	2N2604-05 2N2907A-T46 2N3485-86 2N3508-09 2N5581-82 BC182-TO46 BC212-TO46 BFY74-77 BSV91 BSX20-21 2N3907 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252	PDF
2m137 Abstract: 2N1310 2n1908 2N404 transistor 2N130S 2N526 2N1190 2N32 2N160 2N241A Text: IN TEX/ SEMITRONICS CORP E 7E D • 4fibei a 4fa GGOQETe T -Z 7 -O I 1 discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ; Trinsittdt: Polarity ■mm.-: im* i Maximum Miximum V Typical Giln HFE Power (W) VCB	OCR Scan	ci24t N1086 J2N1087 2N169 S50I6Ã 2m137 2N1310 2n1908 2N404 transistor 2N130S 2N526 2N1190 2N32 2N160 2N241A	PDF
2N19A Abstract: 2N1310 2n1408 2N1305 2N1100 2N404 transistor 2N1008 npn germanium 2N1378 2N1924 Text: T - Z 7 - O I discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ' T t i n t h i a i : Polarity v 2843A Maximum Power <W Maximum V) VCB VCE Typical G lin HFE Frequency Reip. (MHz) Gau P o h iity Î v t V f * 5" ^	OCR Scan	2K43A 2N44A 2Nto37 2N18M 2N109? 2N169 2N3427 2N662 2N1008 2N1008B 2N19A 2N1310 2n1408 2N1305 2N1100 2N404 transistor npn germanium 2N1378 2N1924	PDF
JANS2N5154 Abstract: 23302 JANS2N5154L Text: Micmsemi NPN Transistors Part Number I I I 2N5682 2N5321 2N5320 2N5786 2N5785 2N5784 2N4877 2N5152 2N5152L 2N5154 2N5154L JAN2N5152 JAN2N5152L JAN2N5154 JAN2N5154L JANS2N5152 JANS2N5152L JANS2N5154 JANS2N5154L JANTX2N5152 JANTX2N5152L JANTX2N5154 JANTX2N5154L	OCR Scan		PDF
JANS2N5416 Abstract: JANTX2N3868 2N3202 2N3203 Text: Microsemi PNP Transistors Part Number JANTX2N3868 JANTX2N3868S JANTXV2N3868 JANTXV2N3868S 2N4236 2N5147 2N5149 2 N5404 2N5406 2N5405 2N5407 2N3208 2N3202 2N3203 2N3204 2N5679 2N5680 2N5415 JAN2N5415 JANS2N5415 JANS2N5415S JANTX2N5415 JANTXV2N5415 2N5416 JAN2N5416	OCR Scan	M5151 2N5151L 2N51S3 JANS2N5416 JANTX2N3868 2N3202 2N3203	PDF
Untitled Abstract: No abstract text available Text: GERMANIUM NPN TRANSISTORS Type y' CBO y yEBO y M ax M ax Ki 1 CBO @y c B y M ax M ax y mA Typical Cob Pf M ax fa b MHZ M in 14' 6.0 14' 9.0 Pack Outline Power Dissipation @ 25°C MW NPN 2N356A 2N357 2N357A 2N358 2N358A 30 20 30 20 30 20 20 20 20 20 20 15 20	OCR Scan	2N356A 2N357 2N357A 2N358 2N358A 2N366 2N377 2N377A 2N385	PDF
2N1378 Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001 Text: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145	OCR Scan	2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N1378 2N1924 2N2374 2N1373 2N1274 2N1305 2N2001	PDF
germanium transistors NPN Abstract: 2N711 2n2430 2N388 2N1304 2N1892 2N705 2N828 2N1308 2N388A Text: GERMANIUM NPN TRANSISTORS Type Yc.O V Max YEBO V Max Ki V Max h rc IcBO @ Y CB V Max Typical @/r rn.-i Cob Pf Max fab MHZ Min 14' 6.0 14' 9.0 Pack Outline Power Dissipation @25°C MW NPN 2N356A 2N357 2N357A 2N358 2N358A 30 20 30 20 30 20 20 20 20 20 20 15	OCR Scan	2N356A 2N357 2N357A 2N358 2N358A 2N366 2N377 2N377A 2N385 germanium transistors NPN 2N711 2n2430 2N388 2N1304 2N1892 2N705 2N828 2N1308 2N388A	PDF
2N1855 Abstract: 0E-18 2N1025 2n936 Text: jo m itr o n io r s e m ic o n d u c t o r s s s Sem itronics Corp. silicon transistors silicon small signal transistors general purpose — alloy Typ« Polarity Power Dissipation @ 25°C mW (°C) BV c b o (volts) 2N3298 2N330A 2N923 2N924 2N925 2N926 2N927	OCR Scan	2N327A 2N327B 2N328A 2N328B 2N329A 2N3298 2N330A 2N923 2N924 2N925 2N1855 0E-18 2N1025 2n936	PDF
2N217s Abstract: 2N1028 2N923 2N936 2NJ228 2n1854 2N3346 2N326A 2N16S5 2N1025 Text: JGiïlitrOniCT sem icon d u ctors ä Sem ilronics Corp. silicon transistors silico n sm all signal transistors general purpose — alloy Type Polarity Power Dissipation @ 25°C mW Tj CC) BV c b o (volts) B U ,. D*CE— (volts) (Max.) PNP PNP PNP PNP PNP	OCR Scan	2N327A 2N327B 2N326A 2N328B 2N329A 2N32SB 2N330A 2N923 2N924 2N925 2N217s 2N1028 2N936 2NJ228 2n1854 2N3346 2N16S5 2N1025	PDF

TO5 TRANSISTOR Search Results

TO5 TRANSISTOR Result Highlights (5)

TO5 TRANSISTOR Datasheets Context Search

geiger apd

TO-205AA

Untitled

NPN Transistor VCEO 1000V

"infrared distance sensor" 1997

TO-205AA

Untitled

Reflective Optical Sensor focused

Untitled

transistor VCEO 1000V

White Paint

HEDS 1000

NPN Monolithic Transistor Pair

Darlington pair IC

2N3907

2m137

2N19A

JANS2N5154

JANS2N5416

Untitled

2N1378

germanium transistors NPN

2N1855

2N217s