ZVP2110A
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use ZVP2110A P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω G REFER TO ZVP2110A FOR GRAPHS D G D S E-Line TO92 Compatible
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ZVP2110A
ZVP2110C
ZVP2110A
-375mA
-375mA
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ZVP2106
Abstract: zvp2106a
Text: Not Recommended for New Design Please Use ZVP2106A P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2106C ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS on =5Ω G D REFER TO ZVP2106A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZVP2106A
ZVP2106C
ZVP2106A
-500mA
-500mA
ZVP2106
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP4424A ISSUE 2 SEPTEMBER 94 FEATURES * 240 Volt VDS * RDS on =9Ω * Low threshold APPLICATIONS * Electronic Hook Switch D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage
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ZVP4424A
-100V
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3412 to92
Abstract: fet to92 3TF20 ZVP054 to92 fet p channel ZVP0540A P-Channel Enhancement Mode Vertical DMOS FET VDS25 DSA003786
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0540A ISSUE 2 MARCH 94 FEATURES * 400 Volt VDS * RDS on =150Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE -400 UNIT V Continuous Drain Current at Tamb=25°C
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ZVP0540A
-50mA
3412 to92
fet to92
3TF20
ZVP054
to92 fet p channel
ZVP0540A
P-Channel Enhancement Mode Vertical DMOS FET
VDS25
DSA003786
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP3306A ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS on =14Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -60 V Continuous Drain Current at Tamb=25°C
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ZVP3306A
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ZVP3310A
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP3310A ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS on =20Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -100 V Continuous Drain Current at Tamb=25°C
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ZVP3310A
-100V
ZVP3310A
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0545A ISSUE 2 MARCH 94 FEATURES * 450 Volt VDS * RDS on =150Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE UNIT -450 V Continuous Drain Current at Tamb=25°C
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ZVP0545A
-50mA
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120A ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE -200 UNIT V Continuous Drain Current at Tamb=25°C
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ZVP2120A
-100V
-180V
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to92 fet p channel
Abstract: ZVP0545A DSA003786 3TF20
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0545A ISSUE 2 MARCH 94 FEATURES * 450 Volt VDS * RDS on =150Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE UNIT -450 V Continuous Drain Current at Tamb=25°C
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ZVP0545A
-50mA
to92 fet p channel
ZVP0545A
DSA003786
3TF20
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP4105A ISSUE 2 MARCH 94 FEATURES * 50 Volt VDS * RDS on =10Ω * Low threshold D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -50 V Continuous Drain Current at Tamb=25°C
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ZVP4105A
-100mA
-270mA
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BS250p
Abstract: ZVP2106A fet to92 to92 fet p channel bs250 to92 fet DSA0037522
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250P ISSUE 2 SEPT 93 FEATURES * 45 Volt VDS * RDS on =14Ω D G REFER TO ZVP2106A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -45 V Continuous Drain Current at Tamb =25°C
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BS250P
ZVP2106A
-200mA
-500mA
BS250p
fet to92
to92 fet p channel
bs250
to92 fet
DSA0037522
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zvp2106a
Abstract: ZVP2106C
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2106C ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS on =5Ω G D REFER TO ZVP2106A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE -60 UNIT V Continuous Drain Current at Tamb=25°C
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ZVP2106C
ZVP2106A
-500mA
ZVP2106C
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ZVP2106A
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVP2106A ISSUE 2 – M ARCH 94 FEATURES * 60 Volt VDS * RDS on =5Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS -60 V Contin uo us Drain Cur r en t at T am b=25°C
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ZVP2106A
ZVP2106A
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVP2110A ISSUE 2 – M ARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS -100 V Contin uo us Drain Cur r en t at T am b=25°C
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ZVP2110A
-100V
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KSK30OBU
Abstract: No abstract text available
Text: KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA MAX • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSK30
KSK30OBU
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FET BFW10
Abstract: BC244 Fet NF510 NF510 Fet 2SK520 BFW10 FET FET bf244 FET tis34 NF510 NEC 200j
Text: JUNCTION FET Item Number Part Number 91. IDSS Manufacturer VOS Off CI. Max Max PD Max Toper Max Package Style N-Channel JFETs, (Co nt' d) 5 10 15 20 TP4224 2N4224 SMP5248 TMPF5248 TP5248 TP5248 BFW10 MMF1 MMF2 MMF3 4 MMF5 MMF6 SMP3823 TIS34 TMPF3823 TP3823
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TP4224
2N4224
SMP5248
TMPF5248
TP5248
BFW10
SMP3823
TIS34
TMPF3823
FET BFW10
BC244
Fet NF510
NF510 Fet
2SK520
BFW10 FET
FET bf244
FET tis34
NF510
NEC 200j
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Untitled
Abstract: No abstract text available
Text: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSK117
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FJN598J
Abstract: No abstract text available
Text: FJN598J FJN598J Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic TO-92 1 1. Source 2. Gate 3. Drain Si N-channel Junction FET
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FJN598J
FJN598J
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transistor
Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list
Text: Transistor Bipolar Transistor Transistor with Internal Resistor Quick Reference by Package Product List Quick Reference by Function/Application Small Signal Transistor Transistor for Array Power Transistor Bipolar Transistor MOS,FET Field Effect Transistor
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X13769XJ2V0CD00
O-126)
MP-25
O-220)
MP-40
MP-45
MP-45F
O-220
MP-80
MP-10
transistor
POWER MOS FET 2sj 2sk
transistor 2sk
2SK type
n channel fet array
Low frequency power transistor
transistor mp40
TRANSISTOR P 3
high hfe transistor
list
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Kt 0936
Abstract: 2N3819 NATIONAL SEMICONDUCTOR M/Kt 0936 to92 fet p channel National 2N3819 2N3819 MMBF5484 "TO-72 package" ML252 MMBFJ305
Text: mi-, vni-, urn- Amplifiers 3 3 1 ° - Z TO-52 N Channel • b BVqss Device - ‘ ‘ V) Min ‘ : R elYfk ' <T' Re(Yos) NF Ciss Crss S’* *• :k ^ (jim ho>@ f (d B )@ R g = 1 k -‘f * ' Package (pFj (PF) - 4 0 C '§ M a r .Max (V). ("A ) Min (MHz) Max (MHz*
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2N3819
T0-92
2N44-16
PW4416
MMBF441S:
O-236*
2N5Z45^
Kt 0936
2N3819 NATIONAL SEMICONDUCTOR
M/Kt 0936
to92 fet p channel
National 2N3819
2N3819
MMBF5484
"TO-72 package"
ML252
MMBFJ305
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Untitled
Abstract: No abstract text available
Text: S A MS U N G SEMICONDUCTOR 14E INC D I 71b4].45 GOG7004 T | SI N-CHANNEL JUNCTION FET KSK123 T-29-25 AF IMPEDANCE CONVERTER SOT-23 • BUILHN DIODE BETWEEN G AND S • LOW NV ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Drain Source Voltage Drain Gate Voltage
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GOG7004
KSK123
T-29-25
OT-23
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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Untitled
Abstract: No abstract text available
Text: SAMSUNG S EM ICO NDUC TOR INC 14E D I 711*4142 OOOl. Tl? B | KSK65 Si N-CHANNEL JUNCTION FET T-29-25 AF IMPEDANCE CONVERTER • BuiIMn Diode Between G and S • Low NV ABSOLUTE MAXIMUM RATINGS T8=25°C Characteristic Drain-Source Voltage Gate-Drain Voltage
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KSK65
T-29-25
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8SS138
Abstract: GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n
Text: MOSFETS - N CHANNEL BY VOLTAGE 20V Drain-Source Rated Trench G e n F e t Qg [nC l, Typ. Ros(on) [m n l Id Vgs = 2.5V Vgs = 4.5V [V] [A] Max Max V d s = 10V Vgs Vgs 4.5V 10V Config Package Page Dual SOT-363 - TN0205AD*'1 20 0.25 2500 2000 0.35 TN0200T
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TN0205AD*
TN0200T
OT-363
OT-23
BSH105
GF6968A
GF6968E
GF9926
GF4126
8SS138
GFP80N03
SFB50N03
BS170 bss138
2N7002 60V SOT-23
Fet irfz44n
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