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    TO92 NPN Search Results

    TO92 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    TO92 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE194

    Abstract: No abstract text available
    Text: NTE194 Silicon NPN Transistor Audio Power Amplifier Description: The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V


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    PDF NTE194 NTE194 100MHz

    NTE2341

    Abstract: npn darlington TO92 NTE2342
    Text: NTE2341 NPN & NTE2342 (PNP) Silicon Complementary Transistors Darlington Driver Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers.


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    PDF NTE2341 NTE2342 NTE2341 500mA, 100MHz npn darlington TO92 NTE2342

    2N3904 TO92

    Abstract: 2n3904 h2 c 2N3904 2N3903
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N3903 2N3904 TO92 CBE General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS Ta=25 deg C unless otherwise specified


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    PDF ISO/TS16949 2N3903 2N3904 C-120 2N3904 TO92 2n3904 h2 c 2N3904 2N3903

    MPSA44

    Abstract: CTO-92
    Text: NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR MPSA44 ISSUE 2 – MARCH 94 FEATURES * High voltage APPLICATIONS * Telephone dialler circuit E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage


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    PDF MPSA44 100mA, MPSA44 CTO-92

    NTE293

    Abstract: pnp to92
    Text: NTE293 NPN & NTE294 (PNP) Silicon Complementary Transistors Audio Amplifier and Driver Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in low–frequency power amplification and drive applications.


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    PDF NTE293 NTE294 500mA, 200MHz NTE293MP NTE293 pnp to92

    Untitled

    Abstract: No abstract text available
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL RF TRANSISTOR CSC1730 TO92 BCE TV VHF, UHF, TUNER Oscillator Mixer Amplifier Applications.


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    PDF CSC1730 25deg C-120

    CTO-92

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use ZTX458 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR MPSA44 ISSUE 2 – MARCH 94 FEATURES * High voltage APPLICATIONS * Telephone dialler circuit E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


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    PDF ZTX458 MPSA44 100mA, CTO-92

    ZTX360

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX360 ISSUE 2 – MARCH 94 FEATURES * 40 Volt VCEO * 1 Amp continuous current * Fast switching C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO


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    PDF ZTX360 500mA, 100MHz ZTX360

    Untitled

    Abstract: No abstract text available
    Text: TO -92 TB100 NPN power transistor 19 December 2013 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 TO92 plastic package intended for use in low power SMPS emitter switching circuits.


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    PDF TB100

    NPN Transistor TO92

    Abstract: 2N3904 6 pins IC cbe 2N3903 1010 to-92
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N3903 2N3904 TO92 CBE General Purpose Switching and Amplifier Applications


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    PDF 2N3903 2N3904 C-120 NPN Transistor TO92 2N3904 6 pins IC cbe 2N3903 1010 to-92

    Untitled

    Abstract: No abstract text available
    Text: DISCONTINUED NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FXTA42 ISSUE 1 – SEPT 93 FEATURES * 300 Volt VCEO APPLICATIONS * Telephone dialler circuits B C REFER TO MPSA42 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT


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    PDF FXTA42 MPSA42 20MHz

    CSC1730

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL RF TRANSISTOR E CSC1730 TO92 BCE CB TV VHF, UHF, TUNER Oscillator Mixer Amplifier Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified


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    PDF ISO/TS16949 CSC1730 25deg C-120 CSC1730

    NTE12

    Abstract: NTE11
    Text: NTE11 NPN & NTE12 (PNP) Silicon Complementary Transistors High Current Amplifier Description: The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case designed for use in low–frequency output amplifier, DC converter, and strobe applications.


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    PDF NTE11 NTE12 200MHz NTE12 NTE11

    to106

    Abstract: NTE108 oscillatore 1ghz NTE108-1 NPN Transistor TO92 transistor amplifier 5v to 15v
    Text: NTE108 and NTE108−1 Silicon NPN Transistor High Frequency Amplifier Description: The NTE108 TO92 and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise, high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF amplifiers, and non−saturating


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    PDF NTE108 NTE108-1 NTE108 200MHz -20dB) 500MHz to106 oscillatore 1ghz NTE108-1 NPN Transistor TO92 transistor amplifier 5v to 15v

    BUJ100

    Abstract: transistor BUJ100
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ100 Silicon Diffused Power Transistor Product specification September 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use


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    PDF BUJ100 BUJ100 transistor BUJ100

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ISSUE 2 – APRIL 2002 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt APPLICATIONS * Telephone dialler circuits C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER


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    PDF ZTX658 100ms

    NTE172A

    Abstract: NPN Transistor TO92 40V 200mA NPN Transistor TO92 5V 200mA npn darlington TO92
    Text: NTE172A Silicon NPN Transistor Darlington Preamp, Medium Speed Switch Description: The NTE172A is a silicon NPN Darlington transistor in a TO92 type case designed for preamplifier input stages requiring input impedances of several megohms or extremely low level, high gain, low


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    PDF NTE172A NTE172A 10MHz 10kHz, NPN Transistor TO92 40V 200mA NPN Transistor TO92 5V 200mA npn darlington TO92

    oscillatore 1ghz

    Abstract: NTE108 NPN Transistor TO92
    Text: NTE108 Silicon NPN Transistor High Frequency Amplifier Description: The NTE108 is a silicon NPN transistor in a TO92 type case designed for low–noise, high–frequency amplifiers, 1GHz local oscillatore, non–neutralized IF amplifiers, and non–saturating circuits with rise


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    PDF NTE108 NTE108 140kHz 60MHz 200MHz 500MHz oscillatore 1ghz NPN Transistor TO92

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BUJ100 Silicon Diffused Power Transistor Product specification September 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use


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    PDF BUJ100

    ZTX458

    Abstract: FXT458
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FXT458 ISSUE 1 – SEPTEMBER 1994 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt B C REFER TO ZTX458 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


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    PDF FXT458 ZTX458 100mA, 20MHz FXT458

    NPN Transistor TO92

    Abstract: To92 transistor datasheet FXTA42 MPSA42 DSA003758
    Text: NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FXTA42 ISSUE 1 – SEPT 93 FEATURES * 300 Volt VCEO APPLICATIONS * Telephone dialler circuits B C REFER TO MPSA42 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


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    PDF FXTA42 MPSA42 20MHz NPN Transistor TO92 To92 transistor datasheet FXTA42 DSA003758

    Untitled

    Abstract: No abstract text available
    Text: DISCONTINUED PLEASE USE ZTX751 NPN SILICON PLANAR FXT451 MEDIUM POWER TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX451 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER


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    PDF ZTX751 FXT451 ZTX451 150mA, 100MHz

    NPN Transistor TO92 40V 200mA

    Abstract: pnp to92 transistor pnp-npn NTE2367 NTE2368
    Text: NTE2367 NPN & NTE2368 (PNP) Silicon Complementary Transistors Digital w/2 Built−In 4.7k Bias Resistors Features: D Built−In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) D Small−Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit


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    PDF NTE2367 NTE2368 200mV, NPN Transistor TO92 40V 200mA pnp to92 transistor pnp-npn NTE2367 NTE2368

    NTE2370

    Abstract: No abstract text available
    Text: NTE2369 NPN & NTE2370 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit


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    PDF NTE2369 NTE2370 200mV, NTE2370