NTE194
Abstract: No abstract text available
Text: NTE194 Silicon NPN Transistor Audio Power Amplifier Description: The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
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NTE194
NTE194
100MHz
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to92 darlington
Abstract: nte232
Text: NTE232 Silicon PNP Transistor Darlington Amplifier, Preamp Description: The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type package designed for preamplifier input applications where high impedance is a requirement.
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NTE232
NTE232
100mA,
50MHz
100MHz
to92 darlington
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NTE2341
Abstract: npn darlington TO92 NTE2342
Text: NTE2341 NPN & NTE2342 (PNP) Silicon Complementary Transistors Darlington Driver Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers.
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NTE2341
NTE2342
NTE2341
500mA,
100MHz
npn darlington TO92
NTE2342
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LF303
Abstract: No abstract text available
Text: LF303 N- Channel Junction Silicon Depletion Field-Effect Transistor Features Especially suggested for use in high sensitive pre-amplifier, amplifying small sign, medical electrical instrument, d-c amplifier. Type Packing TO92S, SOT23-3, TO92 , Metal Packing
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LF303
OT23-3,
500KHz
300uA
100Hz
OT23-3ï
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2N3904 TO92
Abstract: 2n3904 h2 c 2N3904 2N3903
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N3903 2N3904 TO92 CBE General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS Ta=25 deg C unless otherwise specified
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ISO/TS16949
2N3903
2N3904
C-120
2N3904 TO92
2n3904 h2 c
2N3904
2N3903
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MPSA44
Abstract: CTO-92
Text: NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR MPSA44 ISSUE 2 MARCH 94 FEATURES * High voltage APPLICATIONS * Telephone dialler circuit E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage
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MPSA44
100mA,
MPSA44
CTO-92
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NTE293
Abstract: pnp to92
Text: NTE293 NPN & NTE294 (PNP) Silicon Complementary Transistors Audio Amplifier and Driver Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in low–frequency power amplification and drive applications.
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NTE293
NTE294
500mA,
200MHz
NTE293MP
NTE293
pnp to92
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NTE2902
Abstract: Diode Gfg 33
Text: NTE2902 N-Channel Silicon Junction Field Effect Transistor Description: The NTE2902 is a field effect transistor in a TO92 type package designed for use in VHF/UHF amplifier applications. Absolute Maximum Ratings: Note 1 Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
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NTE2902
NTE2902
100Hz
100MHz
Diode Gfg 33
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NTE998
Abstract: No abstract text available
Text: NTE998 Integrated Circuit 1.22V Reference Diode Description: The NTE998 is a temperature compensated low voltage reference device in a TO92 type package. A single monolithic structure is obtained by utilizing transistors and thin film resistors. Benefits of this
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NTE998
NTE998
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NTE6402
Abstract: "Programmable Unijunction Transistor" unijunction programmable unijunction transistor
Text: NTE6402 Programmable Unijunction Transistor PUT Description: The NTE6402 is a 3–terminal silicon planer passivated PNP device available in the standard plastic low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and
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NTE6402
NTE6402
"Programmable Unijunction Transistor"
unijunction
programmable unijunction transistor
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Untitled
Abstract: No abstract text available
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL RF TRANSISTOR CSC1730 TO92 BCE TV VHF, UHF, TUNER Oscillator Mixer Amplifier Applications.
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CSC1730
25deg
C-120
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CTO-92
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use ZTX458 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR MPSA44 ISSUE 2 MARCH 94 FEATURES * High voltage APPLICATIONS * Telephone dialler circuit E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
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ZTX458
MPSA44
100mA,
CTO-92
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NTE4011B
Abstract: NTE4001B NTE955M NTE4013B NTE7486 NTE7490 NTE956 NTE4081B NTE931 NTE4069
Text: NTE Electronics Transistors, Diodes, Rectifiers and ICs Silicon Unijunction Transistor UJT Stock No. Mfr.Õs Type Case Style 935-6196 935-6200 935-6202 6401 6409 6410 TO18 TO18 TO92 Maximum RMS Emitter Current Intrinsic Stand Off Ratio Interbase Resistance
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TE7475
NTE992
NTE7476
NTE2013
NTE7486
NTE4001B
NTE7490
NTE4011B
NTE74121
NTE4013B
NTE955M
NTE956
NTE4081B
NTE931
NTE4069
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ZTX360
Abstract: No abstract text available
Text: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX360 ISSUE 2 MARCH 94 FEATURES * 40 Volt VCEO * 1 Amp continuous current * Fast switching C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO
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ZTX360
500mA,
100MHz
ZTX360
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Untitled
Abstract: No abstract text available
Text: TO -92 TB100 NPN power transistor 19 December 2013 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 TO92 plastic package intended for use in low power SMPS emitter switching circuits.
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TB100
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NPN Transistor TO92
Abstract: 2N3904 6 pins IC cbe 2N3903 1010 to-92
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N3903 2N3904 TO92 CBE General Purpose Switching and Amplifier Applications
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2N3903
2N3904
C-120
NPN Transistor TO92
2N3904
6 pins IC cbe
2N3903
1010 to-92
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Untitled
Abstract: No abstract text available
Text: DISCONTINUED NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FXTA42 ISSUE 1 SEPT 93 FEATURES * 300 Volt VCEO APPLICATIONS * Telephone dialler circuits B C REFER TO MPSA42 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT
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FXTA42
MPSA42
20MHz
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3155 power transistor
Abstract: ZTX214C equivalent ZTX214C DSA003764
Text: PNP SILICON PLANAR LOW NOISE TRANSISTOR ZTX214C ISSUE 2 MARCH 94 FEATURES * Low noise * High gain APPLICATIONS * Audio circuits * Instrumentation C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO
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ZTX214C
-10mA,
-100mA,
200Hz,
100MHz
15KHz
3155 power transistor
ZTX214C equivalent
ZTX214C
DSA003764
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CSC1730
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL RF TRANSISTOR E CSC1730 TO92 BCE CB TV VHF, UHF, TUNER Oscillator Mixer Amplifier Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified
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ISO/TS16949
CSC1730
25deg
C-120
CSC1730
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NTE12
Abstract: NTE11
Text: NTE11 NPN & NTE12 (PNP) Silicon Complementary Transistors High Current Amplifier Description: The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case designed for use in low–frequency output amplifier, DC converter, and strobe applications.
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NTE11
NTE12
200MHz
NTE12
NTE11
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IC 386
Abstract: MPSA94
Text: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR MPSA94 ISSUE 2 MARCH 94 FEATURES * High voltage APPLICATIONS * Telephone dialler circuit E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage
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MPSA94
-400V,
-400V
-10mA,
-50mA,
-100mA,
IC 386
MPSA94
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to106
Abstract: NTE108 oscillatore 1ghz NTE108-1 NPN Transistor TO92 transistor amplifier 5v to 15v
Text: NTE108 and NTE108−1 Silicon NPN Transistor High Frequency Amplifier Description: The NTE108 TO92 and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise, high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF amplifiers, and non−saturating
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NTE108
NTE108-1
NTE108
200MHz
-20dB)
500MHz
to106
oscillatore 1ghz
NTE108-1
NPN Transistor TO92
transistor amplifier 5v to 15v
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4619V
Abstract: NPN transistor Electronic ballast to92
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT54 TO92 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
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BUJ100B
4619V
NPN transistor Electronic ballast to92
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BF 235
Abstract: plc em 235 ZTX1147 ZTX1147A DSA003763
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1147A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -12V * 4 Amp Continuous Current * 20 Amp pulse Current * Low Saturation Voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZTX1147A
BF 235
plc em 235
ZTX1147
ZTX1147A
DSA003763
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