Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TO92 TRANSISTOR PINOUT Search Results

    TO92 TRANSISTOR PINOUT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO92 TRANSISTOR PINOUT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated APT17 480V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 480V   BVCES > 700V   BVEBO > 10V Case: TO92 or SOT23 Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0


    Original     		PDF APT17 MIL-STD-202, 200mg DS36298

    Untitled

    Abstract: No abstract text available
    Text: LS3250SC NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SC is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. See Packaging Information .


    Original     		PDF LS3250SC LS3250SB T0-92

    Untitled

    Abstract: No abstract text available
    Text: LS3250SB NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SB is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. See Packaging Information .


    Original     		PDF LS3250SB T0-92

    Untitled

    Abstract: No abstract text available
    Text: SS1636 Unipolar Hall Switch-High sensitivity Packages Features and Benefits – – – – – – 3 pin TSOT23 suffix ST – – 3 pin SIP (suffix UA) 2.5V to 5.5V Operation -40°C to 150°C Superior temperature operation range CMOS technology Low current consumption


    Original     		PDF SS1636 TSOT23 TSOT23 SS1636ESTT TSOT-23 SS1636EUA SS1636KSTT SS1636KUA SS1636LSTT

    Untitled

    Abstract: No abstract text available
    Text: SS542 Hall Latch - High Sensitivity Features and Benefits Application Examples – – – – – – – – – – CMOS Hall IC Technology Bipolar Output CMOS Multi-purpose latch Solid-State Reliability much better than reed switch Operation down to 2.5V


    Original     		PDF SS542 TSOT23 TSOT-23 SS542ESTT SS542EAU SS542KSTT SS542KAU SS542LSTT SS542LAU

    Untitled

    Abstract: No abstract text available
    Text: SS2609 Hall Latch - High Sensitivity Features and Benefits Application Examples – – – – – – – – – – CMOS Hall IC Technology Bipolar Output CMOS Multi-purpose latch Solid-State Reliability much better than reed switch Operation down to 2.5V


    Original     		PDF SS2609 TSOT23 TSOT-23 SS2609ESTT SS2609EAU SS2609KSTT SS2609KAU SS2609LSTT SS2609LAU

    2N6027

    Abstract: 2n6027 PUT equivalent transistor of 2n6027 PUT 2N6027 "Programmable Unijunction Transistor" programmable unijunction transistor
    Text: 2N6027 Silicon programmable unijunction transistor PUT′s in package TO-92 0.45max 0.7max 1 5.2 1.6 2 2.5 14.5 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings (TA = 25°C) Symbol VAK VGKF VGKR VGAR IT ITRM PT Parameter, units Limits ± 40 40 -5


    Original     		PDF 2N6027 45max 2N6027 2n6027 PUT equivalent transistor of 2n6027 PUT 2N6027 "Programmable Unijunction Transistor" programmable unijunction transistor

    Untitled

    Abstract: No abstract text available
    Text: SS247 CMOS Omnipolar High Sensitivity Micropower Hall Switch Features − − − − − Micropower consumption for battery powered applications Omnipolar, output switches with absolute value of North or South pole from magnet Operation down to 2.5V High sensitivity for direct reed switch replacement applications


    Original     		PDF SS247 SS247ESTT TSOT-23 SS247EUA SS247KSTT SS247KUA SS247LSTT SS247LUA

    Untitled

    Abstract: No abstract text available
    Text: SS3613 CMOS Omnipolar High Sensitivity Micropower Hall Switch Features − − − − − Micropower consumption for battery powered applications Omnipolar, output switches with absolute value of North or South pole from magnet Operation down to 2.5V High sensitivity for direct reed switch replacement applications


    Original     		PDF SS3613 TSOT23 SS3613ESTT TSOT-23 SS3613EUA SS3613KSTT SS3613KUA SS3613LSTT

    IC LM7808 8V Voltage regulator

    Abstract: tl494ch UC3525 application notes LM7915 to-3 lm7812 voltage regulator spec. sheet UC3525 LM7808 TO3 LM2951CM SG3524BN National Semiconductor voltage regulator lm7812
    Text: Linear Products Cross Reference Guide Summer 2004 National Semiconductor provides a comprehensive set of support services. Product information, including sales literature and technical assistance is available through National's Customer Support Centers. Linear Products Cross Reference Guide – 2004


    Original     		PDF

    AN-946 High-Efficiency 3A Battery Chargers Use LM2576

    Abstract: lm35 digital thermometer LM35 LM35 application circuits with Battery Chargers Use LM2576 lm35 spice model lm35dz temp sensor application LM35 application circuits LM35 cold junction circuits with LM35 application
    Text: LM35 Precision Centigrade Temperature Sensors General Description The LM35 series are precision integrated-circuit temperature sensors, whose output voltage is linearly proportional to the Celsius Centigrade temperature. The LM35 thus has an advantage over linear temperature sensors calibrated in


    Original     		PDF 4-Nov-95 AN-946: LM2576 5-Aug-95 SB-111: 2-Sep-2000] 28-Jun-96 AN-946 High-Efficiency 3A Battery Chargers Use LM2576 lm35 digital thermometer LM35 LM35 application circuits with Battery Chargers Use LM2576 lm35 spice model lm35dz temp sensor application LM35 application circuits LM35 cold junction circuits with LM35 application

    BST74A

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and for application in


    OCR Scan     		PDF BST74A MDA765 MOA766 MDA767 MOA742 BST74A

    to92 transistor pinout

    Abstract: MAX-7Q BST72A
    Text: Philips Semiconductors Product specification N-channel vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use in telephone ringer circuits and for application with relay, high-speed


    OCR Scan     		PDF BST72A to92 transistor pinout MAX-7Q BST72A

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    to92 transistor pinout

    Abstract: No abstract text available
    Text: A BST76A _ FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed fo r use as line current interrupter in telephone sets and fo r application in relay, high-speed and line-transformer


    OCR Scan     		PDF BST76A to92 transistor pinout

    to92 transistor pinout

    Abstract: No abstract text available
    Text: BST74A _ yV FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use


    OCR Scan     		PDF BST74A to92 transistor pinout

    Untitled

    Abstract: No abstract text available
    Text: BST74A _ FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed fo r use as line current interrupter in telephone sets and fo r application in relay, high-speed and line-transformer


    OCR Scan     		PDF BST74A

    Untitled

    Abstract: No abstract text available
    Text: BS250 P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • • • • Low RpSon D irect interface to C MOS


    OCR Scan     		PDF BS250

    BST74A

    Abstract: transistor 257 to92 transistor pinout BST74
    Text: I b3E BST74A D • tifc.53T24 00700214 2 5 7 N A P C / P H IL IP S IS IC 3 SE M IC O N » FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed fo r use


    OCR Scan     		PDF BST74A BST74A transistor 257 to92 transistor pinout BST74

    BS250

    Abstract: transistor wz transistor BS250 to92 transistor pinout
    Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor DESCRIPTION BS250 QUICK REFERENCE DATA P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and


    OCR Scan     		PDF BS250 7Z94273 SC-43 transistor wz transistor BS250 to92 transistor pinout

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel vertical D-MOS transistor BST76A FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed fo r use


    OCR Scan     		PDF BST76A

    Untitled

    Abstract: No abstract text available
    Text: • 0023=171 Ofll ■ APX N AMER PHILIPS/DISCRETE BST100 b7E D A P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers. Features:


    OCR Scan     		PDF BST100 D023T73

    GSO 69

    Abstract: No abstract text available
    Text: bbSB^ai 0023^74 6RD * A P X N AMER PHILIPS/ DISCRE TE b?E ]> BST110 yv P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.


    OCR Scan     		PDF BST110 DS3c17b GSO 69

    Untitled

    Abstract: No abstract text available
    Text: BS250 JV P-CHANNEL VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • • • • V ery low Ro So n D irect interface to C-MOS


    OCR Scan     		PDF BS250 53T31 003bD13 bbS3T31 003bD14