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    TOKO REEL PACKAGING TL Search Results

    TOKO REEL PACKAGING TL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TOKO REEL PACKAGING TL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    267M3502104

    Abstract: toko 5c TOP MARKING C1 ROHM MCH18 MCR03 SPA-2318 SPA-2318Z TAJB106K020R 6525C
    Text: SPA-2318 Product Description Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth


    Original     		PDF SPA-2318 SPA-2318 SPA-2318Z EDS-101432 267M3502104 toko 5c TOP MARKING C1 ROHM MCH18 MCR03 SPA-2318Z TAJB106K020R 6525C

    25C2625

    Abstract: power amp schematic
    Text: Preliminary Product Description SPA-2318 Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original     		PDF SPA-2318 SPA-2318 IS-95 EDS-101432 25C2625 power amp schematic

    TAJB105KLRH

    Abstract: No abstract text available
    Text: Preliminary SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier


    Original     		PDF SXB-2089Z SXB-2089Z 43dBm 24dBm AN075 EDS-104625 TAJB105KLRH

    sot 23 S01

    Abstract: SXB-2089 TAJB105KLRH SXB-2089Z MCH185A1R8CK AN-078 43ACP
    Text: Preliminary SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier


    Original     		PDF SXB-2089Z SXB-2089Z AN075 EDS-104625 sot 23 S01 SXB-2089 TAJB105KLRH MCH185A1R8CK AN-078 43ACP

    Sot-363 rf

    Abstract: SGL0363Z
    Text: Preliminary SGL-0363Z Pb RoHS Compliant & Green Package Product Description Sirenza Microdevices’ SGL-0363Z is a low power, low noise amplifier. It is designed for 2.7 to 3.3V battery operation. The matching networks are implemented externally which allows for optimum narrow-band performance


    Original     		PDF SGL-0363Z SGL-0363Z 200-900MHz. 900MHz 200MHz 400MHz EDS-104341 Sot-363 rf SGL0363Z

    Untitled

    Abstract: No abstract text available
    Text: MAAL-008550 Low Noise Amplifier 0.5 - 3.0 GHz M/A-COM Products Rev. V2 Functional Schematic Features • • • • • • • Low Noise Figure: 0.75 dB at 2.3 GHz Single +3 to +5 V Supply Voltage Low Current: 7.5 mA typical Lead-Free SC70-6LD 100% Matte Tin Plating over Copper


    Original     		PDF MAAL-008550 SC70-6LD MAAL-008550

    M513

    Abstract: MAAL-008550 MAAL-008550-000000 MAAL-008550-001SMB MAAL-008550-TR3000
    Text: MAAL-008550 Low Noise Amplifier 0.5 - 3.0 GHz M/A-COM Products Rev. V1 Functional Schematic Features • • • • • • • Low Noise Figure: 0.75 dB at 2.3 GHz Single +3 to +5 V Supply Voltage Low Current: 7.5 mA typical Lead-Free SC70-6LD 100% Matte Tin Plating over Copper


    Original     		PDF MAAL-008550 SC70-6LD MAAL-008550 M513 MAAL-008550-000000 MAAL-008550-001SMB MAAL-008550-TR3000

    MARKING RM* dbm sot89

    Abstract: No abstract text available
    Text: SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier


    Original     		PDF SXB-2089Z SXB-2089Z 43dBm 24dBm AN075 EDS-104625 MARKING RM* dbm sot89

    toko 5c

    Abstract: MCH18 MCR03 SPA-2318 TAJB106K020R SPA-2318Z
    Text: SPA-2318 Z SPA-2318(Z) Low Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)


    Original     		PDF SPA-2318 1700MHz 2200MHz 1960MHz 2140MHz diPA-2318 SPA-2318 SPA-2318Z toko 5c MCH18 MCR03 TAJB106K020R SPA-2318Z

    PSF-S01

    Abstract: TOKO 470 CLASS D 420 MMIC 900 mhz germanium diode sgl0363z 125390 125390-B amplifier 900mhz LL1608-FS10NJ LL1608-FS18NJ
    Text: Preliminary SGL-0363Z Product Description Sirenza Microdevices’ SGL-0363Z is a low power, low noise amplifier. It is designed for 2.7 to 3.3V battery operation. The matching networks are implemented externally which allows for optimum narrow-band performance


    Original     		PDF SGL-0363Z SGL-0363Z 200-900MHz. 900MHz 200MHz 400MHz EDS-104341 PSF-S01 TOKO 470 CLASS D 420 MMIC 900 mhz germanium diode sgl0363z 125390 125390-B amplifier 900mhz LL1608-FS10NJ LL1608-FS18NJ

    MCH18

    Abstract: MCR03 SPA-2318 TAJB106K020R
    Text: Preliminary Product Description SPA-2318 Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original     		PDF SPA-2318 SPA-2318 IS-95 EDS-101432 MCH18 MCR03 TAJB106K020R

    SGL0363Z

    Abstract: No abstract text available
    Text: Preliminary SGL-0363Z Pb RoHS Compliant & Green Package Product Description Sirenza Microdevices’ SGL-0363Z is a low power, low noise amplifier. It is designed for 2.7 to 3.3V battery operation. The matching networks are implemented externally which allows for optimum narrow-band performance


    Original     		PDF SGL-0363Z SGL-0363Z 200-900MHz. 900MHz 200MHz 400MHz EDS-104341 SGL0363Z

    PSF-S01

    Abstract: 125390 EEF-102059 SGL-0363Z 80021 LL1608-FS10NJ LL1608-FS12NJ LL1608-FS18NJ LL1608-FS27NJ LL1608-FS56NJ
    Text: Preliminary SGL-0363Z Pb RoHS Compliant & Green Package Product Description Sirenza Microdevices’ SGL-0363Z is a low power, low noise amplifier. It is designed for 2.7 to 3.3V battery operation. The matching networks are implemented externally which allows for optimum narrow-band performance


    Original     		PDF SGL-0363Z SGL-0363Z 200-900MHz. trio-0363Z 900MHz 200MHz 400MHz EDS-104341 PSF-S01 125390 EEF-102059 80021 LL1608-FS10NJ LL1608-FS12NJ LL1608-FS18NJ LL1608-FS27NJ LL1608-FS56NJ

    IC-276

    Abstract: 25c2625
    Text: Preliminary Product Description SPA-2318 Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original     		PDF SPA-2318 SPA-2318 IS-95 EDS-101432 IC-276 25c2625

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SPA-1318 Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original     		PDF SPA-1318 SPA-1318 EDS-101429

    MAAL-007304-000SMB

    Abstract: MAAL-007304 MAAL-007304-000000 SOT266 M513 MAAL-007304-TR3000 sot266ld
    Text: RoHS Compliant Low Noise Amplifier 0.5 - 3.0 GHz MAAL-007304 V1 Functional Schematic Features • • • • • • • Low Noise Figure: 0.7 dB at 2.3 GHz Single +3 to +5 V Supply Voltage Low Current, 10 mA typical Lead-Free SOT26-6LD 100% Matte Tin Plating over Copper


    Original     		PDF MAAL-007304 OT26-6LD MAAL-007304 OT-26 MAAL-007304-000SMB MAAL-007304-000000 SOT266 M513 MAAL-007304-TR3000 sot266ld

    Untitled

    Abstract: No abstract text available
    Text: MAAL-007304 Low Noise Amplifier 0.5 - 3.0 GHz Rev. V4 Functional Schematic Features • • • • • Low Noise Figure: 0.7 dB at 2.3 GHz Single +3 to +5 V Supply Bias Low Current: 11.5 mA typical Lead-Free SOT-26 Plastic Package RoHS* Compliant and 260°C Reflow Compatible


    Original     		PDF MAAL-007304 OT-26 MAAL-007304

    MAAL-007304

    Abstract: M513 MAAL-007304-000000 MAAL-007304-TR3000
    Text: MAAL-007304 Low Noise Amplifier 0.5 - 3.0 GHz Rev. V4 Functional Schematic Features • • • • • Low Noise Figure: 0.7 dB at 2.3 GHz Single +3 to +5 V Supply Bias Low Current: 11.5 mA typical Lead-Free SOT-26 Plastic Package RoHS* Compliant and 260°C Reflow Compatible


    Original     		PDF MAAL-007304 OT-26 MAAL-007304 M513 MAAL-007304-000000 MAAL-007304-TR3000

    TAJB106K020R

    Abstract: ECB-101161
    Text: Preliminary Product Description SPA-1218 Sirenza Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original     		PDF SPA-1218 SPA-1218 IS-95 EDS-101428 TAJB106K020R ECB-101161

    ECB-101161

    Abstract: No abstract text available
    Text: Preliminary Product Description SPA-1218 Sirenza Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original     		PDF SPA-1218 SPA-1218 IS-95 EDS-101428 ECB-101161

    L2 sot26

    Abstract: No abstract text available
    Text: MAAL-007304 Low Noise Amplifier 0.5 - 3.0 GHz M/A-COM Products Rev. V2 Functional Schematic Features • • • • • • • Low Noise Figure: 0.7 dB at 2.3 GHz Single +3 to +5 V Supply Bias Low Current: 11.5 mA typical Lead-Free SOT-26 Plastic Package


    Original     		PDF MAAL-007304 OT-26 MAAL-007304 L2 sot26

    TK10651D

    Abstract: TK10487M audio compandor IC
    Text: TO K O A M E R I C A " 17E D INC r-7$-67is TOKO * SEMICONDUCTOR Compandor IC Noise Reduction System TK10651M,-L&-D mmwrMs ,.„^. I -».i ; ;>• ,^V,. GENERAL DESCRIPTION H *> .s ‘> ‘‘ •».sss . \ lu.1’.«■>*> j - u l . u m .Ì Ì m /.- u


    OCR Scan     		PDF -67is TK10651M TK10651 TK10651D TK10487M audio compandor IC

    toko reel packaging SOT23

    Abstract: diagram transistor tt 2140 internal diagram of ic 4017 toko reel packaging diode toko packaging specification SOT23 TOKO Packaging diode internal structure of ic 4017 tip 2905 transistor
    Text: REFERENCE DATA Production Standard Note T K l l l x xASI Table of C ontents 1 . S tr u c tu re /F e a tu r e 2 . Electrical C haracteristics Specification 3 . P in Layout 4 . T est Circuit 5 . Block D iagram 6 . D efinition of Term s 7 . Sensor Circuit 8 . O N /O F F Control


    OCR Scan     		PDF DB4-K012 toko reel packaging SOT23 diagram transistor tt 2140 internal diagram of ic 4017 toko reel packaging diode toko packaging specification SOT23 TOKO Packaging diode internal structure of ic 4017 tip 2905 transistor

    EIAJ-RRM-12-B

    Abstract: No abstract text available
    Text: Production Standard Note TK73241MCLH TK73242MCLH T able of C o n ten ts 1 . S tr u c tu r e /F e a tu r e 2 . E lectrical C h a ra c te ristics Specification 3 . T est C ircuit 4 . P in lay o u t 5 . Block D iag ram 6 . D efinition of T erm s 7 . In p u t O u tp u t C apacitor


    OCR Scan     		PDF TK73241MCLH TK73242MCLH DB4-K002 EIAJ-RRM-12-B