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    TOP MARKING A6 Search Results

    TOP MARKING A6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    TOP MARKING A6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AS5SS256K36

    Abstract: AS5SS256K36A 876-3210
    Text: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES ! ! ! ! ! ! ! ! ! ! ! OPTIONS MARKING DQ No. 1001


    Original     		PDF AS5SS256K36 AS5SS256K36A 100-pin AS5SS256K36 AS5SS256K36ADQ-8 AS5SS256K36A 876-3210

    Untitled

    Abstract: No abstract text available
    Text: SSRAM Austin Semiconductor, Inc. 256K x 18 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM, Flow-Through 100-pin TQFP A6 A7 CE\ CE2 NC NC WEH\ WEL\ CE2\ VCC VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A8 A9 FEATURES MARKING -8 -9 -10 A10 NC NC VCCQ VSSQ NC


    Original     		PDF AS5SS256K18 AS5SS256K18 AS5SS256K18DQ-8/IT -40oC -55oC 125oC

    BAS16S

    Abstract: VPS05604 4C3 diode
    Text: BAS16S Silicon Switching Diode Array 4  For high-speed switching applications 5 6  Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2


    Original     		PDF BAS16S OT-363 VPS05604 EHA07193 EHA07291 OT363 Jul-06-2001 EHB00025 BAS16S VPS05604 4C3 diode

    smd transistor A7

    Abstract: smd transistor marking A14 smd a7 5962-8866204xx smd marking A8 smd transistor a4 SMD a7 Transistor Transistors Diodes smd e2 smd transistor marking A3 smd transistor A8
    Text: SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 28-PIN SOJ (DCJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2


    Original     		PDF MT5C2568 28-PIN 100ns -55oC 125oC -40oC A1CW-45/883C MT5C2568ECW-55/883C MT5C2568ECW-70/883C smd transistor A7 smd transistor marking A14 smd a7 5962-8866204xx smd marking A8 smd transistor a4 SMD a7 Transistor Transistors Diodes smd e2 smd transistor marking A3 smd transistor A8

    VPS05604

    Abstract: No abstract text available
    Text: BAS 16S Silicon Switching Diode Array 4  For high-speed switching applications 5 6  Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2


    Original     		PDF OT-363 VPS05604 EHA07193 EHA07291 OT-363 Aug-09-1999 EHB00025 EHB00022 VPS05604

    smd marking "d3"

    Abstract: SMD MARKING A13
    Text: SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 28-PIN SOJ (ECJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2


    Original     		PDF MIL-STD-883 MT5C2568 28-PIN 32-Pin 100ns 5962-8866207UX 5962-8866206UX 5962-8866205UX 5962-8866204UX smd marking "d3" SMD MARKING A13

    Untitled

    Abstract: No abstract text available
    Text: SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 28-PIN SOJ (DCJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2


    Original     		PDF MIL-STD-883 MT5C2568 28-PIN 32-Pin 100ns 5962-8866207UX 5962-8866206UX 5962-8866205UX 5962-8866204UX

    Untitled

    Abstract: No abstract text available
    Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code


    Original     		PDF Si2306DS O-236 OT-23) Si2306DS-T1 08-Apr-05

    Si2306DS

    Abstract: No abstract text available
    Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V "3.5 0.094 @ VGS = 4.5 V "2.8 – TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2306DS O-236 OT-23) S-56945--Rev. 23-Nov-98

    SOT 23 marking code a6 diode

    Abstract: Si2306DS Si2306DS-T1
    Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code


    Original     		PDF Si2306DS O-236 OT-23) Si2306DS-T1 S-31873--Rev. 15-Sep-03 SOT 23 marking code a6 diode

    A6 marking

    Abstract: Si2306DS Si2306DS-T1
    Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code


    Original     		PDF Si2306DS O-236 OT-23) Si2306DS-T1 25lectual 18-Jul-08 A6 marking

    SSRAM

    Abstract: AS5SS256K36
    Text: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) FEATURES             OPTIONS  MARKING Timing 7.5ns/8.5ns/117MHz 8.5ns/10ns/100MHz 10ns/15ns/66MHz -7.5


    Original     		PDF AS5SS256K36 100-pin 5ns/117MHz 5ns/10ns/100MHz 10ns/15ns/66MHz -55oC 125oC) -40oC 105oC) SSRAM AS5SS256K36

    Untitled

    Abstract: No abstract text available
    Text: TE CH T35L6432A SYNCHRONOUS BURST SRAM 64K x 32 SRAM FEATURES PIN ASSIGNMENT Top View Package 100-pin QFP 100-pin TQFP MARKING -4.5 -5 -6 -7 -8 Q T Part Number Examples PART NO. Pkg. BURST SEQUENCE T35L6432A-5Q Q Interleaved (MODE=NC or VCC) T35L6432A-5T T


    Original     		PDF T35L6432A 100-pin T35L6432A-5Q T35L6432A-5T

    T35L6432A

    Abstract: No abstract text available
    Text: TE CH T35L6432A SYNCHRONOUS BURST SRAM 64K x 32 SRAM FEATURES PIN ASSIGNMENT Top View Package 100-pin QFP 100-pin TQFP MARKING -4.5 -5 -6 -7 -8 Q T Part Number Examples PART NO. Pkg. BURST SEQUENCE T35L6432A-5Q Q Interleaved (MODE=NC or VCC) T35L6432A-5T T


    Original     		PDF T35L6432A 100-pin T35L6432A-5Q T35L6432A-5T 100-LEAD T35L6432A

    5962-8868101LA

    Abstract: 5962-8868102LA 64K X 4 SRAM 5962-8868103LA
    Text: SRAM MT5C2564 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-88681 • MIL-STD-883 24-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access


    Original     		PDF MIL-STD-883 MT5C2564 MT5C2564C-20/883C MT5C2564C-25/883C MT5C2564C-35/883C MT5C2564C-45/883C MT5C2564C-55/883C MT5C2564C-70/883C 5962-8868105LA 5962-8868106LA 5962-8868101LA 5962-8868102LA 64K X 4 SRAM 5962-8868103LA

    Untitled

    Abstract: No abstract text available
    Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16


    Original     		PDF MIL-PRF-38534, I/O10 I/O11 I/012 I/O13 I/O14 I/O15 AS8FLC1M32 single120 HIP-66

    EN29SL160

    Abstract: cFeon EN
    Text: EN29SL160 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all


    Original     		PDF EN29SL160 EN29SL160 cFeon EN

    AS8FLC1M32BQT-120/Q

    Abstract: No abstract text available
    Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16


    Original     		PDF AS8FLC1M32 100ns 120ns I/O10 I/O11 I/012 I/O13 I/O14 I/O15 I/O16 AS8FLC1M32BQT-120/Q

    1R SOD-123

    Abstract: A6 SOT-23 SOT 23 A6 on MARKING 1R SOD-123 js u sot-23 BAS 16 MARKING
    Text: BAS 16, BAS16W Silicon Epitaxial Planar Diode 0.55 Fast sw itching diode in case SOT-23, especially suited for autom atic insertion. ^Cathode Mark Top View Marking A6 B î* Top View SOD-123 Plastic Package W eight approx. 0.01 g D im ensions in m m Absolute Maximum Ratings


    OCR Scan     		PDF BAS16W OT-23, OD-123 OT-23) 1R SOD-123 A6 SOT-23 SOT 23 A6 on MARKING 1R SOD-123 js u sot-23 BAS 16 MARKING

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Diode SOT23 - —y Type Ratings 4“ ^ ^ 500 pcs vR 100 pcs Max Max 'f t rr cD SPECIFICATIONS Part Marking Single Diode BAS16 MMBD914 72-0016 72-0914 52-0016 52-0914 minilfeel 75V 250mA 6nS 2pF A6 100V 200mA 15nS 4pF 5D or D01 Schematic Top View


    OCR Scan     		PDF 250mA 200mA BAS16 MMBD914 BAV70 BAW56 BAV99

    256k x 8 dram

    Abstract: SIMM 30-pin
    Text: MT2D2568 256K X 8 DRAM M ODULE [MICRON DRAM . . 256K x 8 DRAM _ FAST PAGE MODE MT2D2568 LOW POWER, EXTENDED REFRESH (MT2D2568 L) M O DULE IV IV L fU I-L . FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access


    OCR Scan     		PDF MT2D2568 30-pin 350mW 512-cycle MT2D2568) 30-PinS 256k x 8 dram SIMM 30-pin

    256k 30-pin SIMM

    Abstract: 30-pin simm memory MT8259 30-pin SIMM
    Text: |U|IC=RON MT8259 256K X 8 DRAM DRAM MODULE PIN ASSIGNMENT Top View OPTIONS Vcc CÄ5 DQ1 AO A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 MARKING • Timing 80ns access 100ns access 120ns access 150ns access • Packages: Leadless 30-pin SIMM Leaded 30-pin SIP


    OCR Scan     		PDF MT8259 30-pin 120mW 1200mW 256k 30-pin SIMM 30-pin simm memory MT8259 30-pin SIMM

    MT9259

    Abstract: 1259EJ
    Text: I^ IIC Z R O N MT9259 256K X 9 DRAM DRAM MODULE PIN ASSIGNMENT Top View OPTIONS Vdd CSS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 W Vss DQ7 PHD DQ8 09 RAS CSS9 D9 Vdd MARKING • Timing 80ns access 100ns access 120ns access 150ns access


    OCR Scan     		PDF MT9259 30-pin 135mW 1350mW MT9259 1259EJ

    Untitled

    Abstract: No abstract text available
    Text: MT4LC4M4B1 L 4 MEG X 4 DRAM MICRON 4 MEG x 4 DRAM DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Plastic SOJ (300 mil) DJ • Refresh Rate Standard 32ms period


    OCR Scan     		PDF 128ms 24/26-Pin