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    TOSHIBA 9097250 Search Results

    TOSHIBA 9097250 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA 9097250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DiT| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    PDF MG75H6EL1 Ic-75A) Icm75A) MG75H6EL1-1 MG75H6EL1-4 MG150Q2YK1 MG200Q1UK1 MG75Q2YK1 MG50Q2YK1 10Sec.

    PC 181 OPTO

    Abstract: MG50N2YS1 16175 MU51
    Text: TD TOSHIBA {DISCRETE/OPTO]- D e J IìGci72S0 DDlbl74 0 | 9097250 TOSHIBA <DISCRETE/OPTO TOSHIBA 90D 16174 SEMICONDUCTOR D TOSHIBA GTR MODULE MG50N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm


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    PDF ciGci72S0 DDlbl74 MG50N2YS1 EGA-MG50N2YS1-4 DT-33 MG50N2YS1 EGA-MG50N2YS1- PC 181 OPTO 16175 MU51

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA { D I SC RE TE /OPT O} *TG 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR dFI^CHTESO GDlbiao Q 90D 16120 D T - 33-/3 TOSHIBA GTR MODULE MG25H1BS1 TECHNICAL DATA SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    PDF MG25H1BS1 25H1BS1-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTO> TD 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA SEMICONDUCTOR » F | ciDci 7 S S D 90D : 16371 D O lt.371 D TOSHIBA GTR MODULE MG8D6EM1 TECHNICAL DATA 'SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    PDF 180gr

    Untitled

    Abstract: No abstract text available
    Text: TO TOSHIBA {DISCRETE/OPTO} DE I SOTTESO DOItiID ? | 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D T “3 3 - 3 S 90D 16110 SEM ICO N DU CTO R TOSHIBA GTR MODULE MG300Q1UK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE HIGH POWER SWITCHING APPLICATIONS.


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    PDF MG300Q1UK1

    Toshiba transistor NPN Ic 50A

    Abstract: toshiba diode 1A TOSHIBA D MG50N2CK1 50n2
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA "ha DE I SOTTESO 001ti335 1 90D D I S C R E TE/OPTO SEMICONDUCTOR 16335 D7"-33j35&#39; TOSHIBA GTR MODULE MG50N2CK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    PDF 001L33S Dr-33-35" MG50N2CK1 TJS1251C EGM-HC50N2CK1-4 Toshiba transistor NPN Ic 50A toshiba diode 1A TOSHIBA D MG50N2CK1 50n2

    MG50D2YM1

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPT0> TD 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR DE~| TGTT E S G □Dlb4Eti 1 90D D T -3 9 -5 7 16426 TOSHIBA GTR MODULE MG50D2YM1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. flOTOR CONTROL APPLICATIONS.


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    PDF MG50D2YM1 085ii 31/C2) MG50D2YM1-4 MG50D2YM1-5 T1A20 MG50D2YM1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} TO DT-33&#39;30" 90D 16242 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA DE I TDTTSSD O O l t ^ a 2 SEMICONDUCTOR TOSHIBA GTR MODULE MG75G6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.


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    PDF DT-33 MG75G6EL1 10-FAST-QN-TAB Ic-75A) MG75C6EL1-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DI SC RE TE /OPT O} * • dF 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR I t o ^tssd 90D 16129 auibiai D t 7"-33~/3 TOSHIBA GTR MODULE MG50H1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    PDF MG50H1BS1 50HIBS1-A

    MG50G2DM1

    Abstract: S443 1251C 251C
    Text: TOSHIBA "Í0 -CDISCRETE/OPTQ} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR D ^ | 101725111 5 1 . 90D 16431 D7"-3f-ö?7 TOSHIBA GTR MODULE M G 5 0 G 2 DM 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    PDF QDlb431_ MG50G2DM1 2-108B1A Ta-25Â di/4t-150A/ MC50G2DM1-4' D01b43S MG50G2DM1 MG50G2DH1-5 S443 1251C 251C

    Untitled

    Abstract: No abstract text available
    Text: TO TOSHIBA {D ISCR ET E/OPTO} D E j IGTTaSG Q01bl54 7 | 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA 90D SEMICONDUCTOR 16124 T~3?-27 D TOSHIBA GTR MODULE M625H2YS1 TECHNICAL DATA SILICON N CHANNEL 1GBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.


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    PDF Q01bl54 M625H2YS1

    transistor 16933

    Abstract: 16933 Transistor
    Text: TOSHIBA {DISCRETE/OPTO} dF I tG ^ S O 99D 16932 9097250 TOSHIBA DISCRETE/OPTO Gült^E S ï~~ DT-?,9-l3 TOSHIBA FIELD EFFECT TRANSISTOR TOSHIBA SEMICONDUCTOR S 2 3 7 0 SILICON N CHANNEL MOS TYPE (7T-M0SI ) TECHNICAL DATA INDUSTRIAL APPLICATIONS _ Unit in aim


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    PDF 030ii 100nA 300uA transistor 16933 16933 Transistor

    MG10G6EL2

    Abstract: No abstract text available
    Text: "TG TOSHIBA {DISCRETE/OPT0> 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR DE I T t m s s o D D G lb n S a | ~ 90D 16195 D TOSHIBA GTR MODULE MG10G6EL2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    PDF MG10G6EL2 EGA-MG10G6EL2-1 EGA-MG10G6EL2-4 MG10G6EL2

    mg15n2

    Abstract: No abstract text available
    Text: TO TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E | TDTTESO 001bDS4 1 DT"33-3 5 90D 16054 SEMICONDUCTOR TOSHIBA GTR MODULE M G 1 5 N 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    PDF 001bDS4 MG15N2YK1 mg15n2

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA - C D I S C R E T E / O P T O J T D 9097250 TOSHIBA <DISCRETE/OPTO> TOSHIBA SEMICONDUCTOR DE | ^D^TaSO DGlb4Sl S 90D 16421 TOSHIBA GTR MODULE .MG50D2DM1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    PDF MG50D2DM1 085il MG50D2DM1-4 DT7a50 HG50D2DM1-5

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA ~Tü DISCRETE/OPTO Ì> F| ^0^7550 DDlblOti 5 90D 16106 SEMICONDUCTOR DT - 2 3 - 3 S ' TOSHIBA GTR MODULE M G 3 0 0 M 1 U K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.


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    PDF

    GT25H101

    Abstract: GT25H Opto Speed SA
    Text: TOSHIBA {DIS CR ETE/O PT O! 90D 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E_| ciO,:17BSD D D l b l ñ ? TD SEMICONDUCTOR 16187 1 D T - 3 3 ' ^ 3 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT25H101 TECHNICAL DATA SILICON N-CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.


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    PDF 15BKAX GT25H101-3 GT25H101 GT25H Opto Speed SA

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO}- TT 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA dF | t O T 75SG GDlbTSS T TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 99D 1 6 7 5 5 2 S IC 7 9 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0SI) T “ 3 <? “ I• •INDUSTRIAL APPLICATIONS


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    PDF 300uA EGA-2SK790-A EGA-2SK790-5

    SS1001

    Abstract: transistor bc 570 GS3A 2sk7884 5a2 DIODE
    Text: TOSHIBA {DISCRETE/OPTO} n De I ^ D T T S S O 99D 1674 5 9097250 TOSHIBA <DISCRETE/OPTO DDlb 7 4 S b DT-^-IS TOSHIBA FIELD EFFECT TRANSISTOR TOSHIBA SEMICONDUCTOR 2 S K 7 8 8 SILICON N CHANNEL HOS TYPE 7T-MOSI ) TECHNICAL DATA INDUSTRIAL APPLICATIONS _ Unit in mm


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    PDF 100nA 300nA JL59MAX. ID-15A EGA-2SK788-4 EGA-2SK788-5 SS1001 transistor bc 570 GS3A 2sk7884 5a2 DIODE

    MG15N1BS1

    Abstract: No abstract text available
    Text: Toshiba -c d i s c r e t e / o p t o j 9097250 TOSHIBA TOSHIBA to DISCRETE/OPTO de | c]m7aso Goitisa i 90D 16152 SEMICONDUCTOR D T-33-/3 TOSHIBA GTR MODULE MG 1 5N1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    PDF T-33-/3 MG15N1BS1-4 MG15N1BS1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {D IS CRETE /OPT O} ^ 99D 16954 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA =10^7550 G G l t ‘ìS4 4 SEMICONDUCTOR DT-43-3S TOSHIBA GTR MODULE MG 1 0 G 6 E M 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.


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    PDF DT-43-3S 10-FA8T-0H-TAB EGA-MG10G6EM1-4 EGA-MG10G6EM1-5

    2108A

    Abstract: S3051 741E MG50G2YM1 A90D
    Text: TOSHIBA {DIS CR ET E/OPT O} I 9097250 TOSHIBA <DI SCRETE/OPTO> TOSHIBA DE I TGTTSSG □□lb43b 4 f ~ _ 90D 16436 DT-3^-bn TO SEMICONDUCTOR TOSHIBA GTR MODULE M G 5 0 G 2 Y M 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. 11DT0R CONTROL APPLICATIONS.


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    PDF 11DT0R lb43b MG50G2YM1 MG50G2YM1-4 MG50G2VM1 MG50G2YM1-5 2108A S3051 741E A90D

    transistor 16305

    Abstract: No abstract text available
    Text: TOSHIBA OISCRETE/OPTO} 90D 16302 9097250 TOSHIBA DISCRETE/OPTO ¿Tostulic SEMICONDUCTOR D T-3J-3S MG15N2CK1 TECHNICAL DATA MG15N6EK1 W o cs ös m H o 2: 00 o f vf £\ > W vO 2 m cs a TOSHIBA CORPORATION OT I A 2 A - 309 - 2 - > L » î "TO TOSHIBA {DISCRETE/OPTO}


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    PDF MG15N2CK1 MG15N6EK1 MG15N2CK1 Ta-25cC) T0T7550 0Dlti30b DT-33-35 transistor 16305

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA TO DE § ÌCH7E5D DDltD7M 7 f~ <D I S C R E T E / O P T O 90D SEMICONDUCTOR 16074 U T - 3 3 -35' TOSHIBA GTR MODULE M G 7 5 M 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.


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