handsfree chip
Abstract: toshiba nand caller id single chip
Text: ISD-T360SA VoiceDSP Digital Speech Processor with CID on Call Waiting CIDCW , Full-Duplex Speakerphone, Master/Slave CODEC Interface, Multiple Flash —Advance Information— and ARAM/DRAM Support Advanced Information The VoiceDSP™ product family combines multiple
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ISD-T360SA
TP3054
ISD-T360SA
16Mbit
handsfree chip
toshiba nand
caller id single chip
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AM29F040BU
Abstract: amd nor flash Toshiba NOR FLASH amd a6 M29F160D MBM29F400 am29lv Am29LV641DL AM29LV641DHL B 80
Text: Toshiba NOR Flash Compatibility Guide Toshiba America Electronic Components, Inc. Systems Application Engineering Group Randall Lopez, MTS Manager John Ahn, Sr. MTS Revision 1.0 September 2001 Prepared by: Systems Application Engineering Group TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
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inforL800
MBM29DL162
MBM29DL163
MBM29DL164
MBM29DL322
MBM29DL333
MBM29DL344
MBM29DL640E
M28W800C
M28W160C
AM29F040BU
amd nor flash
Toshiba NOR FLASH
amd a6
M29F160D
MBM29F400
am29lv
Am29LV641DL
AM29LV641DHL
B 80
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toshiba toggle mode nand
Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit
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64M128M
66MHz
100MHz
200MHz)
500/600MHz
800MHz
400MHz
800MHz)
X16/X18X32
PhotoPC550
toshiba toggle mode nand
TC518128
TC518129
TC551001 equivalent
551664
TC518512
sgs-thomson power supply
Toggle DDR NAND flash
jeida 38 norm
APPLE A5 CHIP
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Untitled
Abstract: No abstract text available
Text: TC94B24WBG_Draft_E Tentative TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC94B24WBG Audio CODEC LSI TC94B24WBG is for audio CODEC LSI. It is built-in an AD converter for microphone input, audio DSP, an audio DA converter, headphones amplifier and monaural ear
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TC94B24WBG
TC94B24WBG
48kHz
S-UFBGA79-0605-0
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TC9WMC2FK
Abstract: No abstract text available
Text: TC9WMC1FK/FU,TC9WMC2FK/FU TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMC1FK,TC9WMC1FU,TC9WMC2FK,TC9WMC2FU TC9WMC1FK/FU: 1024-Bit 64 x 16-Bit 3-Wire Serial EEPROM TC9WMC2FK/FU: 2048-Bit (128 × 16-Bit) 3-Wire Serial EEPROM The TC9WMC1 and TC9WMC2 are electrically
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1024-Bit
16-Bit)
2048-Bit
TC9WMC2FK
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TC9WMC1FK
Abstract: TC9WMC2FK
Text: TC9WMC1FK,TC9WMC2FK Preliminary TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMC1FK,TC9WMC2FK TC9WMC1FK: 1024-Bit 64 x 16-Bit 3-Wire Serial EEPROM TC9WMC2FK: 2048-Bit (128 × 16-Bit) 3-Wire Serial EEPROM The TC9WMC1FK and TC9WMC2FK are electrically
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1024-Bit
16-Bit)
2048-Bit
TC9WMC1FK
TC9WMC2FK
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TC59WM715
Abstract: No abstract text available
Text: TOSHIBA TC59WM715/07/03FT-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-W O R D SX4B A N K SX16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-W ORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-W ORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
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TC59WM715/07/03FT-70
SX16-BITS
TC59WM715FT
152-words
TC59WM707FT
TC59WM703FT
TC59WM715
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TC59WM715
Abstract: TC59WM71
Text: TOSHIBA T C 5 9 W M 7 15/07/03FT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON MONOLITHIC 2,097,152-W O RD SX4BAN KSX 16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
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15/07/03FT-70
16-BITS
304-WORDSX4BANKSX8-BITS
608-WORDSX4BANKSX4-BITS
TC59WM715FT
152-words
TC59WM707FT
TC59WM703FT
TC59WM715
TC59WM71
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.
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THMY7216C1EG-80H
216-WORD
72-BIT
THMY7216C1EG
TC59S6408FT
72-bit
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RWF 55.5 TEMPERATURE CONTROLLER
Abstract: TC8833F-1
Text: TC8833F-1 • DD2SS13 53b ■ T0S3 TOSHIBA UC/UP 1. b4E D GENERAL The Toshiba TC8833F is a singlechip CMOS voice recording / playback LSI based on ADM (Adaptive D elta M odulation). I t can m ake use of ordinary or pseudo S - RAM to record voice d a ta as well as
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TC8833F-1
DD2SS13
TC8833F
100kfi
025E7b
QFP80-P-1420A
TC8833F-64
TC8833F-65
QDSS577
RWF 55.5 TEMPERATURE CONTROLLER
TC8833F-1
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E3235
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59WM815/07/03BFT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
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TC59WM815/07/03BFT-70
304-WORDSX4BANKSX16-BITS
608-WORDSX4BANKSX8-BITS
216-WORDSX4BANKSX4-BITS
TC59WM815BFT
TC59WM807BFT
TC59WM803BFT
E3235
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE THMY728010BEG-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY728010BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and PLL/Registers on a printed circuit board.
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THMY728010BEG-80L
608-WORD
72-BIT
THMY728010BEG
TC59S6408BFTL
72-bit
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TC9188N
Abstract: No abstract text available
Text: SINGLE CHIP ELECTRONIC VOLUME SYSTEM Unit in mm TC9188N/F is an electronic volume system TC9188N in which the volume necessary for sound volume, balance, fader, bass treble, and loudness is controlled. . Selection and control of each volume can be freely made by inputting the specified
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TC9188N/F
TC9188N
-60dB
TC9188N/F
T-77-21
TC9188N
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC59W6431 FB-40#-50#-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT T E N T A T IV E SILICON MONOLITHIC 524,288-WORDSX4BANKSX32-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59W6431FB is a CMOS Double Data Rate synchronous dynamic random access memory organized
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TC59W6431
FB-40#
288-WORDSX4BANKSX32-BITS
TC59W6431FB
A12-A0
TQFP100
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D032
Abstract: TC59S6408BFT THMY728030BEG-80
Text: TOSHIBA THMY728030BEG-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY728030BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT DRAMs and PLL/Registers on a printed circuit board.
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THMY728030BEG-80
608-WORD
72-BIT
THMY728030BEG
TC59S6408BFT
72-bit
P1111111111111M11111HI
D032
THMY728030BEG-80
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7216H1EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216H1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708FT DRAMs and an unbuffer on a printed circuit board.
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THMY7216H1EG-75
216-WORD
72-BIT
THMY7216H1EG
TC59SM708FT
72-bit
THMY7216H1
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R2A3
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE THMY721610BEG-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721610BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404BFTL DRAMs and PLL/Registers on a printed circuit board.
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THMY721610BEG-80L
216-WORD
72-BIT
THMY721610BEG
TC59S6404BFTL
72-bit
R2A3
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7232F0EG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232F0EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.
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THMY7232F0EG-75
432-WORD
72-BIT
THMY7232F0EG
TC59SM704FT
72-bit
THMY7232F0EG)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7216H1 EG-80#-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216H1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708FT/FTL DRAMs and an unbuffer on a printed circuit board.
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216-WORD
72-BIT
THMY7216H1
EG-80#
THMY7216H1EG
TC59SM708FT/FTL
72-bit
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THLY648051FG-80,-80L,-10,-10L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY648051FG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circuit board.
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LY648051
FG-80
608-WORD
64-BIT
THLY648051FG
TC59SM716FT/FTL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THM Y7232F0EG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232F0EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.
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Y7232F0EG-75
432-WORD
72-BIT
THMY7232F0EG
TC59SM704FT
72-bit
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THM Y7216F0EG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 1 6 ,7 7 7 ,2 1 6 -W O R D B Y 72-BIT SY N C H R O N O U S D R A M M O D U L E D ESC R IP T IO N The THMY7216F0EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of
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Y7216F0EG-75
72-BIT
THMY7216F0EG
216-word
TC59SM708FT
72-bit
THMY7216F0EG)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY6440F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6440F1BEG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416BFT DRAMs and an unbuffer on a printed circuit board.
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THMY6440F1
BEG-80
THMY6440F1BEG
304-word
64-bit
TC59S6416BFT
64-bit
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7232G1 EG-80#-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT/FTL DRAMs and an unbuffer on a printed circuit board.
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432-WORD
72-BIT
THMY7232G1
EG-80#
THMY7232G1EG
TC59SM708FT/FTL
72-bit
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