D1160
Abstract: 2SD1160 2SD1160-O 2SD1160-Y
Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode
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2SD1160
D1160
2SD1160
2SD1160-O
2SD1160-Y
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D1160
Abstract: 2SD1160 2SD1160-O 2SD1160-Y
Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode
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2SD1160
D1160
2SD1160
2SD1160-O
2SD1160-Y
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D1160
Abstract: 2SD1160 2SD1160-O 2SD1160-Y
Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode
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2SD1160
D1160
2SD1160
2SD1160-O
2SD1160-Y
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Untitled
Abstract: No abstract text available
Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode
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2SD1160
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D1160
Abstract: 2SD1160 2SD1160-O 2SD1160-Y
Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain · Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) · Built-in free wheel diode
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2SD1160
D1160
2SD1160
2SD1160-O
2SD1160-Y
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1M300
Abstract: D1160
Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode
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2SD1160
1M300
D1160
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Zener Diodes 300v
Abstract: 3A 300V Schottky Diode ZENER diode 400V 5A 5A rectifier Zener diode 2A 300V Power DIODES, toshiba CLH06 Zener Diode 5A Schottky Diodes 5A CLH01
Text: TOSHIBA Semiconductor Company | Diodes >>>Products SEMICONDUCTOR BULLETIN EYE SEPTEMBER 2005 Vol.158 Data Sheets Realizes IF AV = 5A Rectifier Diodes L-FLAT Package for High-Speed, High-Efficiency Diodes Variable Capacitance Diodes Part Number: CLH Series
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CLH03
CLH05
CLH01
CLH02
CLH06
jp/eng/prd/diode/eye/eye200509
CLH07
Zener Diodes 300v
3A 300V Schottky Diode
ZENER diode 400V 5A
5A rectifier
Zener diode 2A 300V
Power DIODES, toshiba
CLH06
Zener Diode 5A
Schottky Diodes 5A
CLH01
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toshiba diode 1A
Abstract: MARK diode general semiconductor toshiba marking code diode 5JUZ47
Text: 5JUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE 5JUZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Forward Current : IF AV = 5A Ultra Fast Reverse-Recovery Time
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5JUZ47
100ns
toshiba diode 1A
MARK diode general semiconductor
toshiba marking code diode
5JUZ47
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Untitled
Abstract: No abstract text available
Text: 5JUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE 5JUZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 600V l Average Forward Current : IF AV = 5A l Ultra Fast Reverse-Recovery Time
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5JUZ47
100ns
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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USFB053
USFB13
USFB13A
USFB13L
USFB14
USFZ10V
USFZ11V
USFZ12V
USFZ13V
USFZ15V
KF6N60
2SK3850 equivalent
KF9N25
KF7N50
MDF10N65b transistor
PANASONIC ZENER
Kf10n60
KIA278R12PI equivalent
kid65003ap equivalent
kia578r05
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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SSIP-12
KIA6283K
KIA7217AP
SSIP-10
KIA6240K
KIA6801K
KIA6901P/F
MB4213
F10P048
mn1280
mb4213 equivalent
smd transistor zaa
diode zener ZD 15
ic mb4213
transistor 2AX SMD
252 B34 SMD ZENER DIODE
bc237 equivalent SMD
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5JUZ47
Abstract: No abstract text available
Text: 5JUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE 5JUZ47 SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600 V Average Forward Current : IF AV = 5 A Ultra Fast Reverse-Recovery Time
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5JUZ47
5JUZ47
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TPC8A01
Abstract: No abstract text available
Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools •
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TPC8A01
Qg17nC
TPC8A01
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E67349
Abstract: TLP3502A
Text: TO SH IBA TLP3502A TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC T L P3 50 2A TRICA DRIVER PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE SOLID STATE RELAY The TOSHIBA TLP3502A consists of a photo-triac optically coupled to a gallium arsenide infrared emitting diode in a 8 lead plastic DIP
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TLP3502A
TLP3502A
2500Vrms
UL1577,
E67349
11-10C3_
E67349
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TVR4J,TVR4N TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR4J, TVR4N HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • • • Unit in mm Repetitive Peak Reverse Voltage : Vrrm = 600, 1000V Average Forward Current : Ip(AV) = 1-2A (Ta = 55°C)
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TFR3N,TFR3T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR3N, TFR3T Unit in mm STROBO FLASHER APPLICATIONS FAST RECOVERY • • • Average Forward Current : Ip (AV)= 0-2A Repetitive Peak Reverse Voltage : Vf>j>M = 1000, 1500V Reverse Recovery Time
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TVR4N X
Abstract: TVR4J TOSHIBA RECTIFIER
Text: T O SH IB A TVR4JJVR4N TOSHIBA FAST RECOVERY DIODE TX/Rdl SILICON DIFFUSED TYPE TX/RAN HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY U nit in mm • Repetitive Peak Reverse Voltage : V r r ]V[ = 600, 1000V • Average Forward C urrent : I f (AV) —1-2A (Ta = 55°C)
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961001EAA2'
TVR4N X
TVR4J
TOSHIBA RECTIFIER
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TA 8202 K
Abstract: RN5006 RN6006 SSOP16 TA8323F WS50
Text: TOSHIBA TENTATIVE TA8323F TO SH IBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP TA8323F LOW SATURATION VOLTAGE DRIVER FOR MOTOR TA8323F is Multi Chip 1C incorporates 6 low saturation discrete transistors w hich equipped bias resistor and free w heeling diode.
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TA8323F
TA8323F
SSOP16
980910EBA2
MFP-16
300mW
SSOP16-P-225-1
TA 8202 K
RN5006
RN6006
SSOP16
WS50
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K2525
Abstract: TA8323 RN5006 RN6006 SSOP16 TA8323F
Text: TO SH IBA TENTATIVE TA8323F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP TA8323F LOW SATURATION VOLTAGE DRIVER FOR MOTOR TA8323F is Multi Chip 1C incorporates 6 low saturation discrete transistors which equipped bias resistor and free wheeling diode.
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TA8323F
TA8323F
SSOP16
K2525
TA8323
RN5006
RN6006
SSOP16
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE TA8323F TO SH IBA BIPO LAR LINEAR IN TEGRATED CIRCUIT SILICON MULTI CHIP TA 8323F LOW SATURATION VOLTAGE DRIVER FOR MOTOR TA8323F is Multi Chip 1C incorporates 6 low saturation discrete transistors w hich equipped bias resistor and free
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TA8323F
8323F
TA8323F
SSOP16
RN5006)
RN6006)
MFP-16
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TA8323F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP TA 8 323 F LOW SATURATION VOLTAGE DRIVER FOR MOTOR TA8323F is Multi Chip 1C incorporates 6 low saturation discrete transistors which equipped bias resistor and free wheeling diode.
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TA8323F
TA8323F
SSOP16
RN5006)
RN6006)
MFP-16
SSOP16-P-225-1
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toshiba diode 2A
Abstract: No abstract text available
Text: 2SD1160 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD116Q SWITCHING APPLICATIONS. Unit in mm SUITABLE FOR MOTOR DRIVE APPLICATIONS. • High DC Current Gain • Low Saturation Voltage : 0.6V MAX. @ • Built-in Free Wheel Diode MAXIMUM RATINGS (Ta = 25°C)
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2SD1160
2SD116Q
toshiba diode 2A
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TD62M2701F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP Tnfi5M?7fl1 F • ■ w * ■ ^w r ■ ■ LOW SATURATION VOLTAGE H-BRIDGE DRIVER TD62M2701F is multi-chip H-bridge driver 1C incorporates 4 low saturation discrete transistors which equipped biasresistor and fly-wheel diode. This 1C is suitable for
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TD62M2701F
TD62M2701F
SSOP16-P-225-1
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