Untitled
Abstract: No abstract text available
Text: CLS02 TOSHIBA Schottky Barrier Diode CLS02 Unit: mm Switching-Mode Power Supply Secondary-Rectification Applications (Low Voltage) DC/DC Converter Applications • Suitable for compact assembly due to small surface-mount package: 1.2 ± 0.1 “L−FLATTM” (Toshiba package name)
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CLS02
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TEST88
Abstract: No abstract text available
Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 Unit: mm DC-DC CONVERTER Notebook PC Portable Machines and Tools
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TPC8A01
Qg17nC
TEST88
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TPC8A01
Abstract: MARKING 3AB
Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools •
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TPC8A01
Qg17nC
TPC8A01
MARKING 3AB
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TPC8A01
Abstract: No abstract text available
Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools •
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TPC8A01
Qg17nC
TPC8A01
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TPC8A01
Abstract: No abstract text available
Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 Unit: mm DC-DC CONVERTER Notebook PC Portable Machines and Tools
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TPC8A01
Qg17nC
TPC8A01
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DF2S10FS
Abstract: No abstract text available
Text: DF2S10FS TOSHIBA Diodes for Protecting against ESD DF2S10FS ESD Protection Diode *This device is intended for electrostatic discharge ESD protection and should not be used for any other purpose, including the constant-voltage diode applications. Unit: mm
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DF2S10FS
DF2S10FS
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Untitled
Abstract: No abstract text available
Text: DF2S30FS TOSHIBA Diodes for Protecting against ESD DF2S30FS ESD Protection Diode *This device is intended for electrostatic discharge ESD protection and should not be used for any other purpose, including the constant-voltage diode applications. Unit: mm
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DF2S30FS
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20M diode zener
Abstract: MARKING LY toshiba U02Z300 U02Z300-X U02Z300-Y U02Z300-Z TOSHIBA DIODE GLASS
Text: TOSHIBA U02Z300 TOSHIBA DIODE CONSTANT VOLTAGE REGULATION SILICON DIFFUSED JUNCTION TYPE ZENER DIODE U02Z300 Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range SYMBOL p* Tj Tstg RATING 200
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U02Z300
t-10ms
20M diode zener
MARKING LY toshiba
U02Z300
U02Z300-X
U02Z300-Y
U02Z300-Z
TOSHIBA DIODE GLASS
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laser diode toshiba
Abstract: TOLD9231M 670NM Laser-Diode told daiode
Text: TOLD9231M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9231M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9231M
670nm
15-4A1
laser diode toshiba
TOLD9231M
670NM Laser-Diode
told
daiode
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laser diode toshiba
Abstract: told laser diode toshiba 650 650nm 5mw laser diode 650NM laser diode 5mw
Text: TOLD9441 MD TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9441 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE
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OLD9441
650nm
15-4A1
646nm
651nm
656nm
10kHz,
500MHz)
laser diode toshiba
told
laser diode toshiba 650
650nm 5mw laser diode
650NM laser diode 5mw
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laser diode toshiba
Abstract: told 2 Wavelength Laser Diode 670NM Laser-Diode laser diode 670nm Shibaura
Text: TOLD9221M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9221M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 LD 0 0 3 I @ PD 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9221M
670nm
15-4A1
laser diode toshiba
told
2 Wavelength Laser Diode
670NM Laser-Diode
laser diode 670nm
Shibaura
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TOLD9442M
Abstract: laser diode toshiba 650
Text: TOLD9442M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9442M
TOLD9442M
laser diode toshiba 650
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laser diode toshiba
Abstract: 2 Wavelength Laser Diode 650nm 50mw 12 pin laser
Text: TOLD9441 MC TOSHIBA TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MC Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 0 3 LD 0 PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE
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OLD9441
650nm
15-4A1
646nm
651nm
656nm
10kHz,
500MHz)
laser diode toshiba
2 Wavelength Laser Diode
650nm 50mw
12 pin laser
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zener 563
Abstract: No abstract text available
Text: TOSHIBA _ 015Z2.0-015Z12 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 015Z2.0-015Z12 U nit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS • Sm all Package • Nominal voltage tolerance about +2.5% 2.0V -12V 0.8 + 0.1
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015Z2
0-015Z12
015Z9
015Z10
015Z11
015Z12
zener 563
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x300n
Abstract: 1SS387
Text: TOSHIBA 1SS387 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS387 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Low Forward Voltage : Vp 3 = 0.98V (Typ.) Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance
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1SS387
961001EAA2'
x300n
1SS387
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Untitled
Abstract: No abstract text available
Text: 1SS403 TOSHIBA TENTATIVE TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS403 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS Two-pin small packages are suitable for higher mounting densities. Excellent in Forward Current and Forward Voltage Characteristics : V f 2 = 0.90 V (Typ.)
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1SS403
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Untitled
Abstract: No abstract text available
Text: TOSHIBA _ TOSHIBA DIODE 0 1 5 Z 2 .0 -0 1 5 Z 1 2 SILICON EPITAXIAL PLANAR TYPE 015Z2.0-015Z12 U nit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS • Sm all Package • Nominal voltage tolerance about +2.5% 2.0V -12V
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015Z2
0-015Z12
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1ss373
Abstract: No abstract text available
Text: 1SS373 TOSHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION • • 1 SS373 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm Small Package Low Forward Voltage : Vjn = 0.23V TYP. @Ijr = 5mA 0.8 ±0.1 MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING UNIT CHARACTERISTIC
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1SS373
1ss373
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1SS368
Abstract: No abstract text available
Text: TOSHIBA 1SS368 1 SS368 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION Vp 3 = 0.98V (TYP.) trr= 1.6ns (TYP.) CT = 0.5pF (TYP.) 0.8 ±0.1 io 1 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Forward Voltage
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1SS368
961001EAA2'
1SS368
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20V-24V
Abstract: zener diode 1206
Text: TOSHIBA 02DZ2.0-02DZ24 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE m m i n ~ ri7 n 73d Unit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS. REFERENCE VOLTAGE APPLICATIONS. • • + 0.2 1. 2 5 - 0.1 Small Package Nominal voltage tolerance about ±2.5% 2.0V—24V
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02DZ2
0-02DZ24
V--24V)
2DZ24-X
0-02DZ24
20V-24V
zener diode 1206
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SS367 TOSHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE HIGH SPEED SWITCHING APPLICATION • Small Package • Low Forward Voltage : Vf = 0.23V TYP. @Ijr = 5mA MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING UNIT Vn'llncr#» VRM 15 V Reverse Voltage
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1SS367
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SS373 TOSHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE HIGH SPEED SWITCHING APPLICATION • Small Package • Low Forward Voltage : Vf = 0.23V TYP. @Ijr = 5mA MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING UNIT Vn'llncr#» VRM 15 V Reverse Voltage
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1SS373
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Untitled
Abstract: No abstract text available
Text: 9097250 TOSHIBA D Ë | ciaci7SSD 000^ 314 O fea? TOSHIBA {D ISCR ET E/OPTO} DISCRETE/OPTO 67C Silicon Planar Type; Diode 09314 D T - c / - 1S2460-1S2462 GENERAL PURPOSE RECTIFIER APPLICATIONS. Unit in mm FEATURES: . High Reverse Voltage : VR=200V(Min.) (1S2462)
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1S2460-1S2462
1S2462)
1S2460
1S2461
1S2462
T08HIBA
0D0T31S
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SS352 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SSB52 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage : Vp 3 = 0.98V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance : Crr=0.5pF (Typ.)
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1SS352
SSB52
961001EAA2'
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