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    TOSHIBA HEMT Search Results

    TOSHIBA HEMT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA HEMT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    induction cooker fault finding diagrams

    Abstract: MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200
    Text: [5] Handling Precautions 1 Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when


    Original     		PDF Z8115 MIL-HDBK-217E S57-1 induction cooker fault finding diagrams MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200

    7400A

    Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
    Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions


    Original     		PDF

    mcz 300 1bd

    Abstract: SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode
    Text: 개정 신판 도해 반도체 가이드 개정신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 발간에 즈음하여 Color and Visual Guide: Semiconductors Published by TOSHIBA CORPORATION


    Original     		PDF 128bit Division/e-Busin125 mcz 300 1bd SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=44.0dBm Single Carrier Level


    Original     		PDF TGI7785-120L 25dBc 20dBm No1215

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=44.0dBm Single Carrier Level


    Original     		PDF TGI7785-120L 25dBc 20dBm No1225

    7-AA03A

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI9098-100P FEATURES ･INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 50.0dBm at Pin= 42dBm ･HIGH GAIN GL= 12.0dB at 9.0GHz to 9.8GHz ･HERMETICALLY SEALED PACKAGE ･PULSE OPERATION Pulse width=100 s, Duty cycle=10% RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TGI9098-100P 42dBm 35dBm MAX65 7-AA03A) No1228 7-AA03A

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI0910-50 FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 41.0dBm ･HIGH GAIN GL= 9.0dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Ta= 25C


    Original     		PDF TGI0910-50 20dBm 7-AA04A) No1217

    TGI8596-50

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI8596-50 FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 41.0dBm ･HIGH GAIN GL= 9.0dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Ta= 25C


    Original     		PDF TGI8596-50 20dBm 7-AA04A) No1216 TGI8596-50

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI5867-50L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 39.0dBm ･HIGH GAIN GL= 13.5dB at 5.85GHz to 6.75GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = -40dBc at Po=32.0dBm Single Carrier Level


    Original     		PDF TGI5867-50L 85GHz 75GHz -40dBc 20dBm 7-AA04A) No1227

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.5dBm at Pin= 35.0dBm ･HIGH GAIN GL= 12.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 40dBc at Po=29.0dBm Single Carrier Level


    Original     		PDF TGI7785-25L 40dBc 7-AA04A) No1223

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI5964-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 43.0dBm ･HIGH GAIN GL= 13.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=44.0dBm Single Carrier Level


    Original     		PDF TGI5964-120L 25dBc 43dBm 7-AA06A) No1220

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI1314-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.0dBm at Pin= 39.0dBm ･HIGH GAIN GL= 8.0dB at 13.75GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=37.0dBm Single Carrier Level


    Original     		PDF TGI1314-25L 75GHz 25dBc 20dBm No1210 7-AA07A)

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI1414-50L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 42.0dBm ･HIGH GAIN GL= 8.0dB at 14.0GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=40.0dBm Single Carrier Level


    Original     		PDF TGI1414-50L 25dBc 20dBm 7-AA04A) No1219

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI5867-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.5dBm at Pin= 35.0dBm ･HIGH GAIN GL= 13.5dB at 5.85GHz to 6.75GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = -40dBc at Po=29.0dBm Single Carrier Level


    Original     		PDF TGI5867-25L 85GHz 75GHz -40dBc 20dBm 7-AA04A) No1226

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.5dBm at Pin= 35.0dBm ･HIGH GAIN GL= 12.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 40dBc at Po=29.0dBm Single Carrier Level


    Original     		PDF TGI7785-25L 40dBc 7-AA04A) No1214

    TGI8596-50

    Abstract: TOSHIBA HEMT 41dBm
    Text: MICROWAVE POWER GaN HEMT TGI8596-50 MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES „ HIGH POWER Pout=47.0dBm at Pin=41.0dBm „ HIGH GAIN GL=9.0dB at 8.5GHz to 9.6GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		PDF TGI8596-50 41dBm AA04A TGI8596-50 TOSHIBA HEMT 41dBm

    TGI8596-50

    Abstract: TGI8596
    Text: MICROWAVE POWER GaN HEMT TGI8596-50 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=47.0dBm at Pin=41.0dBm „ HIGH GAIN GL=9.0dB at 8.5GHz to 9.6GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		PDF TGI8596-50 41dBm 20dBm AA04A TGI8596-50 TGI8596

    TGI0910-50

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI0910-50 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=47.0dBm at Pin=41.0dBm „ HIGH GAIN GL=9.0dB at 9.5GHz to 10.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		PDF TGI0910-50 41dBm 20dBm AA04A TGI0910-50

    tgi8596-50

    Abstract: TGI8596
    Text: MICROWAVE POWER GaN HEMT TGI8596-50 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=47.0dBm at Pin=41.0dBm „ HIGH GAIN GL=9.0dB at 8.5GHz to 9.6GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		PDF TGI8596-50 41dBm 20dBm AA04A tgi8596-50 TGI8596

    TGI7785-25L

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-25L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=44.5dBm at Pin=35.0dBm „ HIGH GAIN GL=12.0dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION


    Original     		PDF TGI7785-25L -40dBc 20dBm AA04A TGI7785-25L

    TGI1414-50L

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI1414-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES „ HIGH POWER Pout=47.0dBm at Pin=42.0dBm „ HIGH GAIN GL=8.0dB at 14.0GHz to 14.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION


    Original     		PDF TGI1414-50L -25dBc 42dBm 20dBm AA04A TGI1414-50L

    TGI7785-50L

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=47.0dBm at Pin=40.0dBm „ HIGH GAIN GL=11.0dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION


    Original     		PDF TGI7785-50L -40dBc 40dBm 20dBm AA04A TGI7785-50L

    TGI1414-50L

    Abstract: TOSHIBA HEMT 1.5
    Text: MICROWAVE POWER GaN HEMT TGI1414-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES „ HIGH POWER Pout=47.0dBm at Pin=42.0dBm „ HIGH GAIN GL=8.0dB at 14.0GHz to 14.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION


    Original     		PDF TGI1414-50L -25dBc 42dBm 20dBm AA04A TGI1414-50L TOSHIBA HEMT 1.5

    TOSHIBA HEMT

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-120L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=51.0dBm at Pin=44.0dBm „ HIGH GAIN GL=11.0dB at Pin=20.0dBm „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION


    Original     		PDF TGI7785-120L -25dBc 44dBm 20dBm 7-AA06A) TOSHIBA HEMT