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    TOSHIBA K20J50D Search Results

    TOSHIBA K20J50D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

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    toshiba K20J50D

    Abstract: k20j50 K20J50D TK20J50D
    Text: TK20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK20J50D Switching Regulator Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Drain-source voltage VDSS 500 V Gate-source voltage


    Original     		PDF TK20J50D toshiba K20J50D k20j50 K20J50D TK20J50D

    K20J50D

    Abstract: toshiba K20J50D
    Text: TK20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK20J50D Switching Regulator Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Drain-source voltage VDSS 500 V Gate-source voltage


    Original     		PDF TK20J50D K20J50D toshiba K20J50D

    K20J50D

    Abstract: No abstract text available
    Text: TK20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII TK20J50D Switching Regulator Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V ID 20 DC (Note 1) Drain current IDP 80


    Original     		PDF TK20J50D K20J50D

    toshiba K20J50D

    Abstract: K20J50D TK20J50D k20j50 SC-65 VDD400
    Text: TK20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK20J50D Switching Regulator Applications 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage


    Original     		PDF TK20J50D toshiba K20J50D K20J50D TK20J50D k20j50 SC-65 VDD400

    toshiba K20J50D

    Abstract: K20J50D TK20J50D k20j50 SC-65
    Text: TK20J50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK20J50D スイッチングレギュレータ用 単位: mm 1.0 2.0 (VDS = 500 V) : Vth = 2.0～4.0 V (VDS = 10 V, ID = 1 mA) 2.0 3.3max. 取り扱いが簡単なエンハンスメントタイプです。


    Original     		PDF TK20J50D toshiba K20J50D K20J50D TK20J50D k20j50 SC-65

    toshiba K20J50D

    Abstract: No abstract text available
    Text: TK20J50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK20J50D 単位: mm スイッチングレギュレータ用 1.0 2.0 4.5 Ф3.2±0.2 15.9max. : |Yfs| = 8.5 S (標準) (VDS = 500 V) 2.0 取り扱いが簡単なエンハンスメントタイプです。


    Original     		PDF TK20J50D toshiba K20J50D