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    TOSHIBA K2601 Search Results

    TOSHIBA K2601 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA K2601 Datasheets Context Search

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    toshiba transistor k2601

    Abstract: No abstract text available
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON-resistance : RDS (ON) = 0.56 High forward transfer admittance : |Yfs| = 7.0 S (typ.) Unit: mm


    Original     		PDF 2SK2601 toshiba transistor k2601

    K2601

    Abstract: toshiba K2601 datasheet toshiba K2601 toshiba transistor k2601 2SK2601 SC-65
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601 K2601 toshiba K2601 datasheet toshiba K2601 toshiba transistor k2601 2SK2601 SC-65

    Untitled

    Abstract: No abstract text available
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601

    K2601

    Abstract: toshiba K2601 toshiba K2601 datasheet toshiba transistor k2601 2SK2601 SC-65
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601 K2601 toshiba K2601 toshiba K2601 datasheet toshiba transistor k2601 2SK2601 SC-65

    toshiba K2601

    Abstract: K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601 toshiba K2601 K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b

    toshiba K2601

    Abstract: K2601 toshiba transistor k2601
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601 toshiba K2601 K2601 toshiba transistor k2601

    toshiba K2601

    Abstract: toshiba transistor k2601 K2601 2SK2601 SC-65
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601 toshiba K2601 toshiba transistor k2601 K2601 2SK2601 SC-65

    K2601

    Abstract: toshiba K2601 2SK2601 jeita sc-65
    Text: 2SK2601 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2601 ○ スイッチングレギュレータ 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.75 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準)


    Original     		PDF 2SK2601 SC-65 2-16C1B K2601 2002/95/EC) K2601 toshiba K2601 2SK2601 jeita sc-65

    toshiba K2601

    Abstract: K2601 jeita sc-65 2SK2601
    Text: 2SK2601 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2601 ○ スイッチングレギュレータ 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.56 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準)


    Original     		PDF 2SK2601 SC-65 2-16C1B K2601 2002/95/EC) toshiba K2601 K2601 jeita sc-65 2SK2601