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    TOSHIBA K3878 Search Results

    TOSHIBA K3878 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA K3878 Datasheets Context Search

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    k3878

    Abstract: transistor Toshiba K3878 toshiba k3878 APPLICATION NOTE K3878 2SK3878 2SK3878 equivalent transistor k3878 k3878 toshiba SC-65 2sk3878 toshiba
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		PDF 2SK3878 k3878 transistor Toshiba K3878 toshiba k3878 APPLICATION NOTE K3878 2SK3878 2SK3878 equivalent transistor k3878 k3878 toshiba SC-65 2sk3878 toshiba

    transistor Toshiba K3878

    Abstract: k3878 tr/K3878 transistor
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		PDF 2SK3878 transistor Toshiba K3878 k3878 tr/K3878 transistor

    transistor Toshiba K3878

    Abstract: K3878 toshiba k3878 k3878 toshiba APPLICATION NOTE K3878 transistor k3878 toshiba transistor k3878 2SK3878 2sk3878 toshiba K3878 transistor
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		PDF 2SK3878 transistor Toshiba K3878 K3878 toshiba k3878 k3878 toshiba APPLICATION NOTE K3878 transistor k3878 toshiba transistor k3878 2SK3878 2sk3878 toshiba K3878 transistor

    transistor Toshiba K3878

    Abstract: k3878 toshiba toshiba k3878 k3878 APPLICATION NOTE K3878 transistor k3878 2SK3878 2sk3878 toshiba
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		PDF 2SK3878 transistor Toshiba K3878 k3878 toshiba toshiba k3878 k3878 APPLICATION NOTE K3878 transistor k3878 2SK3878 2sk3878 toshiba

    k3878

    Abstract: transistor Toshiba K3878 APPLICATION NOTE K3878 toshiba k3878 2SK3878 k3878 toshiba 2SK3878 equivalent transistor k3878 SC-65 K3878 transistor
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		PDF 2SK3878 k3878 transistor Toshiba K3878 APPLICATION NOTE K3878 toshiba k3878 2SK3878 k3878 toshiba 2SK3878 equivalent transistor k3878 SC-65 K3878 transistor

    k3878

    Abstract: transistor Toshiba K3878 toshiba k3878 2SK3878 transistor k3878 APPLICATION NOTE K3878 2SK3878 equivalent k3878 toshiba K387 SC-65
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		PDF 2SK3878 k3878 transistor Toshiba K3878 toshiba k3878 2SK3878 transistor k3878 APPLICATION NOTE K3878 2SK3878 equivalent k3878 toshiba K387 SC-65

    K3878

    Abstract: toshiba k3878 2SK3878 k3878 toshiba SC-65 2sk3878 toshiba VDD400
    Text: 2SK3878 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3878 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準)


    Original     		PDF 2SK3878 SC-65 2-16C1B K3878 toshiba k3878 2SK3878 k3878 toshiba SC-65 2sk3878 toshiba VDD400

    k3878

    Abstract: 2SK3878STA1 2sk3878
    Text: 2SK3878 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3878 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準)


    Original     		PDF 2SK3878 k3878 2SK3878STA1 2sk3878