2sk3880
Abstract: No abstract text available
Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type -MOSIV 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)
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k3880
Abstract: No abstract text available
Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)
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K3880
Abstract: 2SK3880
Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)
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Untitled
Abstract: No abstract text available
Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)
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K3880
Abstract: 2SK3880 diode marking 1200
Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)
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2SK3880
K3880
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diode marking 1200
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K3880
Abstract: 2SK3880 toshiba K3880
Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)
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2SK3880
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toshiba K3880
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K3880
Abstract: toshiba K3880
Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)
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K3880
Abstract: 2SK3880 toshiba K3880
Text: 2SK3880 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3880 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.35Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.2S (標準)
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2SK3880
10VID
2-16F1B
K3880
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toshiba K3880
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transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)
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